CN1513176A - 在信息层中含有三氮菁染料作为吸光性化合物的光学数据存储介质 - Google Patents

在信息层中含有三氮菁染料作为吸光性化合物的光学数据存储介质 Download PDF

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CN1513176A
CN1513176A CNA028109074A CN02810907A CN1513176A CN 1513176 A CN1513176 A CN 1513176A CN A028109074 A CNA028109074 A CN A028109074A CN 02810907 A CN02810907 A CN 02810907A CN 1513176 A CN1513176 A CN 1513176A
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alkyl
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optical data
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H・伯内斯
H·伯内斯
げ悸车
F·-K·布鲁德
吕克
W·黑泽
固芈廾啄
R·哈根
遣格
K·哈森吕克
蠖��
S·科斯特罗米尼
曼
P·兰登伯格
な┧维茨
R·奥泽尔
指穸
T·索默曼
J·－W·施塔维茨
T·比林格尔
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Abstract

本发明因此涉及含有优选透明的基材的光学数据存储介质，该基材任选已涂敷了一层或多层的反射层和在其表面上施涂光可记录的信息层，任选的一层或多层反射层和任选的保护层或附加的基材或覆盖层，该数据存储介质能够利用蓝光或红光，优选激光来记录和读，其中信息层含有吸光性化合物和任选的粘结剂。本发明数据载体进一步的特征在于至少一种三氮菁染料用作该吸光性化合物。

Description

在信息层中含有三氮菁染料 作为吸光性化合物的光学数据存储介质
本发明涉及在信息层中含有作为吸光性化合物的三氮菁染料(Triazacyaninfarbstoff)的一次可记录的光学数据存储介质，和涉及它的生产方法。
采用特定的吸光性物质或其混合物的一次写入型可记录的光学数据存储介质特别适合用于以蓝色激光二极管、尤其GaN或SHG激光二极管(360-460nm)操作的高密度可记录的光学数据存储介质和/或用于以红光(635-660nm)或红外(780-830nm)激光二极管操作的DVD-R或CD-R盘片，和上述染料通过旋涂或汽相淀积法施涂于聚合物基材、尤其聚碳酸酯上。
一次写入型可记录的压缩光盘(CD-R，780nm)最近有了巨大的发展并代表了技术上成熟的系统。
下一代的光学数据存储介质-DVD系列-目前已经引入到市场。由于短波激光照射(635-660nm)和较高的数值孔径NA的使用，该存储密度能够提高。在这种情况下可记录的格式是DVD-R。
今天，已经开发出了使用高激光功率的蓝色激光二极管(基于GaN，JP 08 191171或二次谐波发生SHG，JP 09 050 629)(360nm-460nm)的光数据存储格式。可记录的光学数据存储介质器因此也用于这一代。能实现的存储密度取决于激光焦点在该信息面上的聚焦。焦点尺寸与λ/NA成正比，NA是所使用的物镜的数值孔径。为了获得最高可能的存储密度，目的是使用最小可能的波长λ。以半导体激光二极管为基础，390nm目前是可能的。
该专利文献描述了染料型可记录的光学数据存储介质，它们同样地适合于CD-R和DVD-R系统(JP-A 11 043 481和JP-A 10 181 206)。为了获得高反射率，读出信号的高调制电平和在记录过程中的足够敏感性，可利用以下事实：CD-R的780nm的IR波长位于染料的吸收峰的长波长斜坡(Flanke)的基础部分和DVD-R的635nm或650nm的红色波长位于染料的吸收峰的短波长斜坡的基础部分。在JP-A 02 557 335，JP-A10058 828，JP-A 06336086，JP-A 02 865 955，WO-A 09 917284和US-A 5 266699中，这一概念延伸到覆盖在吸收峰的短波长斜坡上的450nm工作波长范围和在长波长斜坡上的红色和IR范围。
除该上述的光学性质外，得自吸光性有机物质的可记录的信息层必须具有尽可能无定形的形态，以便在记录或读的过程中保持尽可能小的噪音信号。对于此目的，当通过从溶液旋涂或通过汽相淀积(Aufdampfen)和/或升华来施涂该物质时，特别优选的是在随后于真空下罩涂金属或电介质层的过程中防止该吸光性物质的结晶。
吸光性物质的无定形层优选具有高度热稳定性，因为通过溅射或汽相淀积法被施涂于吸光性信息层上的有机或无机材料的其它附加层将由于散射而形成变模糊的边界，因此不利地影响反射率。此外，如果吸光性物质在聚合物载体的界面处具有不够的热稳定性，则它扩散到载体中，和再次不利地影响该反射率。
如果吸光性物质具有过高的蒸汽压力，则吸光性物质将在高真空下的附加层的上述喷溅或汽相淀积过程中发生升华和因此降低了所需要的层厚度。这进而不利地影响该反射率。
本发明的目的因此是提供满足可用于在一次可记录的光学数据存储介质的信息层中，尤其用于在340-680nm的激光波长范围的高密度可记录的光学数据存储格式的高要求(例如光稳定性，有益的信号/噪声比，对基材的无损害式施涂，等)的合适的化合物。
令人吃惊地已经发现，选自三氮菁染料类的吸光性化合物能够特别适于满足上述要求范围(profil)。
本发明因此涉及含有优选透明的基材的光学数据存储介质，该基材任选已涂敷了一层或多层的反射层和在其表面上施涂光可记录的信息层，任选的一层或多层反射层和任选的保护层或附加的基材或覆盖层，该数据存储介质能够利用蓝光或红光，优选激光来记录和读，其中信息层含有吸光性化合物和任选的粘结剂，特征在于至少一种三氮菁染料用作吸光性化合物。
吸光性化合物应该优选是以加热途径可改性的。热改性(thermische Vernderung)优选在＜600℃的温度下，特别优选在＜400℃的温度下，非常特别优选在＜300℃的温度下，尤其在＜200℃的温度下发生。该改性能够是例如吸光性化合物的发色中心的分解或化学改性。
通式I的三氮菁是优选的
其中
X1和X3表示氮或
X1-R1和X3-R2彼此独立地表示S，
X2和X4彼此独立地表示O，S，CH或N-R3，
R1，R2和R3彼此独立地表示C1-到C16-烷基，C3-到C6-链烯基，C5-到C7-环烷基或C7-到C16-芳烷基。
环A和B在各种情况下分别地与X1，X2和X3，X4和在各情况下在它们之间所键接的C原子一起彼此独立地表示五-或六-元芳族或准芳族杂环，这些杂环能够含有1到4个杂原子和/或能够是苯并或萘并稠合的和/或被非离子基团取代，和
An-表示阴离子，
相应。
合适的非离子基团例如是C1-到C4-烷基，C1-到C4-烷氧基，卤素，氰基，硝基，C1-到C4-烷氧基羰基，C1-到C4-烷硫基，C1-到C4-链烷酰基胺基，苯甲酰基胺基，单或二-C1-到C4-烷基胺基。
烷基，烷氧基，芳基和杂环基可以任选含有附加的基团，如烷基，卤素，硝基，氰基，CO-NH2，烷氧基，三烷基甲硅烷基，三烷基硅氧基或苯基，该烷基和烷氧基基团可以是直链或支化的，该烷基可以部分地卤化或全卤化，该烷基和烷氧基基团可以是乙氧基化或丙氧基化或甲硅烷基化的，在芳基或杂环基团上的相邻烷基和/或烷氧基基团可以一起形成三元或四元桥连基和该杂环基可以是苯并稠合的和/或季化的(quaterniert)。
特别优选以下通式的环A
表示苯并噻唑-2-基，苯并噁唑-2-基，苯并咪唑-2-基，噻唑-2-基，异噻唑-3-基，咪唑-2-基，吡唑-5-基，1，3，4-噻二唑-2-基，1，2，4-噻二唑-5-基，1，2，3-噻二唑-5-基，1，3，4-三唑-2-基，2-或4-吡啶基或2-或4-喹啉基，其中该上述的环能够在各情况下被C1-到C6-烷基，C1-到C6-烷氧基，氟，氯，溴，碘，氰基，硝基，C1-到C6-烷氧基羰基，C1-到C6-烷硫基，C1-到C6-酰基胺基，C6-到C10-芳基，C6-到C10-芳氧基，C6-到C10-芳基羰基胺基，单或二-C1-到C6-烷基胺基，N-C1-到C6-烷基-N-C6-到C10-芳基胺基，吡咯烷基(Pyrrolidino)，吗啉基(Morpholino)或哌嗪基(Piperazino)取代，和
下式的环B
Figure A0281090700082
表示苯并噻唑-2-叉基，苯并噁唑-2-叉基，苯并咪唑-2-叉基，噻唑-2-叉基，异噻唑-3-叉基，咪唑-2-叉基，吡唑-5-叉基，1，3，4-噻二唑-2-叉基，1，2，4-噻二唑-5-叉基，1，2，3-噻二唑-5-叉基，1，3，4-三唑-2-叉基，吡啶-2-或4-叉基，喹啉-2-或4-叉基，其中该上述的环能够在各情况下被C1-到C6-烷基，C1-到C6-烷氧基，氟，氯，溴，碘，氰基，硝基，C1-到C6-烷氧基羰基，C1-到C6-烷硫基，C1-到C6-酰基胺基，C6-到C10-芳基，C6-到C10-芳氧基，C6-到C10-芳基羰基胺基，单或二-C1-到C6-烷基胺基，N-C1-到C6-烷基-N-C6-到C10-芳基胺基，吡咯烷基，吗啉基或哌嗪基取代。
在特别优选的形式中，三氮菁是具有以下通式的那些
Figure A0281090700091
其中
R1和R2彼此独立地表示C1-到C16-烷基，C3-到C6-链烯基，C5-到C7-环烷基或C7-到C16-芳烷基，
X5表示N或C-R6，
X6表示N或C-R7
R4到R7彼此独立地表示氢，C1-到C4-烷基，C1-到C4-烷氧基，C1-到C4-烷硫基，氰基，C1-到C4-烷氧基羰基，硝基，单或双-C1-到C4-烷基胺基，N-C1-到C4-烷基-N-C7-到C15-芳烷基胺基，N-C1-到C4-烷基-N-C5-到C17-环烷基胺基，N-C1-到C4-烷基-N-C6-到C10-芳基胺基，C6-到C10-芳基胺基，吡咯烷基，哌啶基，哌嗪基或吗啉基或
R4；R6和R5；R7彼此独立地形成-CH＝CH-CH＝CH-桥连基，它能够被甲基，氯，甲氧基或氰基取代，和
An-表示阴离子。
合适的阴离子An-是全部的单价阴离子或一当量的多价阴离子。优选该阴离子是无色的。合适的阴离子是，例如，氯离子，溴离子，碘离子，四氟硼酸根，高氯酸根，六氟硅酸根，六氟磷酸根，甲硫酸根，乙硫酸根，C1-到C10-链烷烃磺酸根，C1-到C10-全氟链烷烃磺酸根，C1-到C10-链烷酸根(它任选被氯、羟基或C1-到C4烷氧基取代)苯磺酸根，萘磺酸根或联苯磺酸根(它们任选被硝基，氰基，羟基，C1-到C25-烷基，全氟C1-到C4-烷基，C1-到C4-烷氧基羰基或氯所取代)苯二磺酸根，萘二磺酸根或联苯二磺酸根(它们任选被硝基，氰基，羟基，C1-到C4-烷基，C1-到C4-烷氧基，C1-到C4-烷氧基羰基或氯取代)苯甲酸根(它任选被硝基，氰基，C1-到C4-烷基，C1-到C4-烷氧基，C1-到C4-烷氧基羰基，苯甲酰基，氯苯甲酰基或甲苯酰基取代)萘二羧酸的阴离子，二苯基醚二磺酸根，四苯基硼酸根，氰基三苯基硼酸根，四-C1-到C20-烷氧基硼酸根，四苯氧基硼酸根，7，8-或7，9-联咔(Dicarba)-巢状(nido)-undecaborat(1-)或(2-)，它们任选在B-和/或C-原子上被一个或两个C1-到C12-烷基或苯基取代，十二氢-dicarbadodecaborat(2-)和B-C1-到C12-烷基-C-苯基-十二氢-dicarbadodecaborat(1-)。
溴离子，碘离子，四氟硼酸根，高氯酸根，甲烷磺酸根，苯磺酸根，甲苯磺酸根，十二烷基苯磺酸根和十四烷磺酸根是优选的。
在非常特别优选的形式中，所使用的三氮菁是具有通式(IV)的那些，
其中
R1和R2彼此独立地表示甲基，乙基，丙基，丁基，戊基，己基，苄基，环己基，氯乙基，氰基甲基，氰基乙基，羟乙基，2-羟丙基，甲氧基乙基，乙氧基乙基或以下通式的基团
Figure A0281090700101
X5表示N或C-R6，
X6表示N或C-R7，
R4和R5彼此独立地表示氢，甲基，乙基，甲氧基，氰基，甲氧基羰基，二甲基胺基，二乙基胺基，二丙基胺基，二丁基胺基，N-甲基-N-氰基乙基胺基，N-甲基-N-甲氧基乙基胺基，N-甲基-N-羟乙基胺基，双-(氰基乙基)胺基，双-(甲氧基乙基)胺基，双-(羟乙基)-胺基，N-甲基-N-苄基胺基，N-甲基-N-苯基胺基，苯基胺基，甲氧基苯基胺基，吡咯烷基，哌啶基(Piperidino)，N-甲基-，N-乙基-，N-羟乙基-或N-氰基乙基哌嗪基或吗啉基，
R6和R7彼此独立地表示氢，甲基，乙基，甲氧基或氰基或
R4；R6和R5；R7彼此独立地形成-CH＝CH-CH＝CH-桥连基，它们能够被甲基，氯，甲氧基或氰基取代，和
An-表示阴离子。
在也相当优选的形式中，所使用的三氮菁是具有通式(IV)的那些，
其中
R1和R2是相同的和表示甲基，乙基，丙基，丁基，戊基，己基，苄基，环己基，氯乙基，氰基甲基，氰基乙基，羟乙基，2-羟丙基，甲氧基乙基，乙氧基乙基或以下通式的基团
X5表示C-R6，
X6表示C-R7，
R4；R6和R5；R7是相同的和形成-CH＝CH-CH＝CH-桥连基，它们能够被甲基，氯，甲氧基或氰基取代，和
An-表示阴离子。
在也相当优选的形式中，所使用的三氮菁是具有通式(IV)的那些，
其中
R1和R2是相同的和表示甲基，乙基，丙基，丁基，戊基，己基，苄基，环己基，氯乙基，氰基甲基，氰基乙基，羟乙基，2-羟丙基，甲氧基乙基，乙氧基乙基或以下通式的基团
X5表示N，
X6表示N，
R4和R5是相同的和表示二甲基胺基，二乙基胺基，二丙基胺基，二丁基胺基，N-甲基-N-氰基乙基胺基，N-甲基-N-甲氧基乙基胺基，N-甲基-N-羟乙基胺基，双-(氰基乙基)胺基，双-(甲氧基乙基)胺基，双-(羟乙基)胺基，N-甲基-N-苄基胺基，N-甲基-N-苯基胺基，苯基胺基，甲氧基苯基胺基，吡咯烷基，哌啶基，N-甲基-，N-乙基-，N-羟乙基-或N-氰基乙基哌嗪基或吗啉基，和
An-表示阴离子
在也相当优选的形式中，所使用的三氮菁是具有通式(IV)的那些，
其中
R1和R2是相同的和表示甲基，乙基，丙基，丁基，戊基，己基，苄基，环己基，氯乙基，氰基甲基，氰基乙基，羟乙基，2-羟丙基，甲氧基乙基，乙氧基乙基或以下通式的基团
Figure A0281090700121
X5表示N，
X6表示C-R7，
R4表示二甲基胺基，二乙基胺基，二丙基胺基，二丁基胺基，N-甲基-N-氰基乙基胺基，N-甲基-N-甲氧基乙基胺基，N-甲基-N-羟乙基胺基，双-(氰基乙基)胺基，双-(甲氧基乙基)胺基，双-(羟乙基)胺基，N-甲基-N-苄基胺基，N-甲基-N-苯基胺基，苯基胺基，甲氧基苯基胺基，吡咯烷基，哌啶基，N-甲基-，N-乙基-，N-羟乙基-或N-氰基乙基哌嗪基或吗啉基，
R5；R7形成-CH＝CH-CH＝CH-桥连基，它们能够被甲基，氯，甲氧基或氰基取代，和
An-表示阴离子。
对于利用蓝光激光器的光进行记录和读的根据本发明的一次可记录的光学数据存储介质，此类三氮菁染料是优选的，它的最大吸收λmax2是在420-550nm范围，其中在波长λmax2处的最大吸收的短波长斜坡中的消光值是在λmax2处的消光值的一半的那一波长λ1/2和在波长λmax2处的最大吸收的短波长斜坡中的消光值是在λmax2处的消光值的十分之一的那一波长λ1/10优选在各情况下彼此相隔不超过50nm。此类三氮菁染料优选在直至350nm，特别优选直至320nm，和非常特别优选直至290nm的波长下不显示出更短波最大值λmax1。
优选的三氮菁染料是具有410到530nm的最大吸收λmax2的那些染料。
特别优选的三氮菁染料是具有420到510nm的最大吸收λmax2的那些染料。
非常特别优选的三氮菁染料是具有430到500nm的最大吸收λmax2的那些染料。
在这些三氮菁染料中，如以上所定义的λ1/2和λ1/10优选彼此相隔不超过40nm，特别优选相隔不超过30nm，非常特别优选相隔不超过20nm。
对于利用红光激光器的光进行记录和读的根据本发明的一次可记录的光学数据存储介质，此类三氮菁染料是优选的，它的最大吸收λmax2是在500-650范围，其中在波长λmax2处的最大吸收的长波长斜坡中的消光值是在λmax2处的消光值的一半的那一波长λ1/2和在波长λmax2处的最大吸收的长波长斜坡中的消光值是在λmax2处的消光值的十分之一的那一波长λ1/10优选在各情况下彼此相隔不超过50nm。此类三氮菁染料优选在直至750nm，特别优选直至800nm，和非常特别优选直至850nm的波长下不显示出更长波最大值λmax3。
优选的三氮菁染料是具有530到630nm的最大吸收λmax2的那些染料。
特别优选的三氮菁染料是具有550到620nm的最大吸收λmax2的那些染料。
非常特别优选的三氮菁染料是具有580到610nm的最大吸收λmax2的那些染料。
在这些三氮菁染料中，如以上所定义的λ1/2和λ1/10优选彼此相隔不超过40nm，特别优选相隔不超过30nm，非常特别优选相隔不超过20nm。
在最大吸收λmax2处三氮菁染料具有＞200001/mol cm，优选＞300001/mol cm，特别优选＞40000l/mol cm和非常特别优选＞60000l/molcm的摩尔消光系数ε。
该吸收光谱例如在溶液中测量。
通式(I)的三氮菁例如可从EP-A 0 567 846获知。
所述的吸光性物质确保了未记录状态的光学数据存储介质的足够高的反射率(＞10％)和在用聚焦光的点式照射时足够高的吸收以实现信息层的热降解，如果光的波长是在360-460nm和600-680nm范围的话。在数据存储介质的记录和未记录区域之间的对比度可通过根据入射光的振幅(Amplitude)和相而言的反射率变化来获得，这归因于在热降解之后信息层的变化的光学性质。
根据本发明的三氮菁染料尤其确保在从未记录到记录状态的转变中在折射指数上的特别高的变化。
该三氮菁染料优选通过旋涂方法被施涂于光学数据存储介质上。该三氮菁能够彼此或与其它具有类似物光谱性质的染料混合。信息层能够不仅含有三氮菁染料，而且含有诸如粘结剂，润湿剂，稳定剂，稀释剂和增感剂以及其它成分之类的添加剂。
除信息层外，光学数据存储介质能够含有其它层，如金属层，电介质层和保护层。金属和电介质层特别用于调节反射率和热平衡(Wrmehaushalts)。取决于激光波长，金属能够是金，银或铝等等。电介质层例如是二氧化硅和氮化硅。保护层是，例如，可光致固化的涂层，(压敏)粘合层和保护膜。
优选的压敏粘合剂层主要由丙烯酸粘合剂组成。Nitto DenkoDA-8320或DA-8310(它们在专利JP-A 11-273147中公开)能够例如用于这一目的。
该光学数据存储介质具有，例如，下列层状组合结构(参见图1)：透明基材(1)，任选的保护层(2)，信息层(3)，任选的保护层(4)，任选的粘合剂层(5)和覆盖层(6)。
优选，该光学数据存储介质组合结构能够含有：
-优选透明的基材(1)，它的表面涂敷了能够利用光(优选激光)进行记录的至少一层光可记录的信息层(3)，任选的保护层(4)，任选的粘合剂层(5)和透明覆盖层(6)；
-优选透明的基材(1)，它的表面涂敷了保护层(2)，能够利用光(优选激光)进行记录的至少一层信息层(3)，任选的粘合剂层(5)和透明覆盖层(6)；
-优选透明的基材(1)，它的表面任选地涂敷了保护层(2)，能够利用光(优选激光)进行记录的至少一层信息层(3)，任选的保护层(4)，任选的粘合剂层(5)和透明覆盖层(6)；
-优选透明的基材(1)，它的表面涂敷了能够利用光(优选激光)进行记录的至少一层信息层(3)，任选的粘合剂层(5)和透明覆盖层(6)；
另外地，光学数据存储介质具有例如下列层状结构(参见图2)：优选透明的基材(11)，信息层(12)，任选的反射层(13)，任选的粘合剂层(14)，和附加的、优选透明的基材(15)。
本发明还涉及利用蓝光或红光，尤其激光来记录的根据本发明的光学数据存储介质。
下列实施例用于说明本发明的主题：
实施例
实施例1
a)经过30分钟的时间将41.6g的硫酸二甲酯加入到45g 2-氨基苯并噻唑在500ml甲苯中的混合物中。在80℃下经历1小时之后，将悬浮液冷却，抽滤，残留物用甲苯洗涤。固体溶于300ml的水中。通过添加浓KOH溶液，该pH提高至9。在室温下搅拌6小时之后，沉淀的产物被抽滤出来，用水洗涤和加以干燥。获得42.9g(理论值的87％)的以下通式的无色结晶物。
Figure A0281090700151
b)将30g的2-氨基苯并噻唑溶于400ml的冰醋酸中和在10℃下添加80ml的85wt％磷酸和60ml的48wt％硫酸。然后在5℃下滴加68g的亚硝基硫酸(在硫酸中40wt％)。在0-5℃下4小时之后，亚硝酸盐过量物用氨基磺酸破坏。
c)来自b)的重氮化产物在10℃下被滴加到32.8g的来自a)的产物在240ml冰醋酸中的溶液中，通过滴加20wt％苏打溶液(Sodalsung)将pH保持在3。最后，混合物被调节到pH＝3.5和在室温下搅拌过夜。将产物进行抽滤和用水洗涤。它被敲击(angeschlagen)到300ml的水中，用20wt％苏打溶液调节到pH＝7.5，再一次抽滤，用水洗涤和加以干燥。获得29.7g(理论值的46％)的以下通式的黄色粉。
d)将4ml的硫酸二甲酯加入到8.8g的来自c)的三氮烯(Triazens)在40mlγ-丁内酯中的混合物中。在80℃下经过6小时之后将混合物冷却，排出到500ml的水中和利用过滤除去不溶组分。
e)在室温下将6.6g的四氟硼酸钠加入到来自d)的溶液中。在搅拌过夜之后，混合物进行抽滤，残留物用水洗涤。橙色固体相继搅拌在50ml的甲醇，50ml的乙酸乙酯和10ml的水中，每次进行抽滤和然后干燥。获得2.4g(理论值的28％)的以下通式的橙色粉。
Figure A0281090700162
M.p.＝260-266℃
λmax2(甲醇/氯仿1∶1)＝489nm
ε＝332801/molcm
λ1/2-λ1/10(短波长斜坡)＝61nm
λ1/2-λ1/10(长波长斜坡)＝16nm
溶解度：在TFP(2，2，3，3-四氟丙醇)中＞2％
玻璃状膜。
同样合适的三氮菁染料示于下表中：
Figure A0281090700171
Figure A0281090700181
1)在甲醇中，除非另外说明。
2)在短波长斜坡上
3)在长波长斜坡上

Claims (8)

1.含有优选透明的基材的光学数据存储介质，该基材任选已涂敷了一层或多层的反射层和在其表面上施涂光可记录的信息层，任选的一层或多层反射层和任选的保护层或附加的基材或覆盖层，该数据存储介质能够利用蓝光或红光，优选激光来记录和读，其中信息层含有吸光性化合物和任选的粘结剂，特征在于它含有吸光性化合物和任选的粘结剂，特征在于至少一种三氮菁染料用作该吸光性化合物。
2.根据权利要求1的光学数据存储介质，特征在于该三氮菁对应于以下通式
Figure A0281090700021
其中
X1和X3表示氮或
X1-R1和X3-R2彼此独立地表示S，
X2和X4彼此独立地表示O，S，CH或N-R3，
R1，R2和R3彼此独立地表示C1-到C16-烷基，C3-到C6-链烯基，C5-到C7-环烷基或C7-到C16-芳烷基。
环A和B在各情况下分别地与X1，X2和X3，X4和在各情况下在它们之间所键接的C原子一起彼此独立地表示五-或六-元芳族或准芳族杂环，这些杂环能够含有1到4个杂原子和/或能够是苯并或萘并稠合的和/或被非离子基团取代，和
An-表示阴离子。
3.根据权利要求2的光学数据存储介质，特征在于
以下通式的环A
Figure A0281090700031
表示苯并噻唑-2-基，苯并噁唑-2-基，苯并咪唑-2-基，噻唑-2-基，异噻唑-3-基，咪唑-2-基，吡唑-5-基，1，3，4-噻二唑-2-基，1，2，4-噻二唑-5-基，1，2，3-噻二唑-5-基，1，3，4-三唑-2-基，2-或4-吡啶基，或2-或4-喹啉基，上述的环有可能在各种情况下被C1-到C6-烷基，C1-到C6-烷氧基，氟，氯，溴，碘，氰基，硝基，C1-到C6-烷氧基羰基，C1-到C6-烷硫基，C1-到C6-酰基胺基，C6-到C10-芳基，C6-到C10-芳氧基，C6-到C10-芳基羰基胺基，单或二-C1-到C6-烷基胺基，N-C1-到C6-烷基-N-C6-到C10-芳基胺基，吡咯烷基，吗啉基或哌嗪基取代，和
下式的环B
Figure A0281090700032
表示苯并噻唑-2-叉基，苯并噁唑-2-叉基，苯并咪唑-2-叉基，噻唑-2-叉基，异噻唑-3-叉基，咪唑-2-叉基，吡唑-5-叉基，1，3，4-噻二唑-2-叉基，1，2，4-噻二唑-5-叉基，1，2，3-噻二唑-5-叉基，1，3，4-三唑-2-叉基，吡啶-2-或4-叉基或喹啉-2-或4-叉基，上述的环可以在各种情况下被C1-到C6-烷基，C1-到C6-烷氧基，氟，氯，溴，碘，氰基，硝基，C1-到C6-烷氧基羰基，C1-到C6-烷硫基，C1-到C6-酰基胺基，C6-到C10-芳基，C6-到C10-芳氧基，C6-到C10-芳基羰基胺基，单或二-C1-到C6-烷基胺基，N-C1-到C6-烷基-N-C6-到C10-芳基胺基，吡咯烷基，吗啉基或哌嗪基取代。
4.根据权利要求1到3中一项或多项的光学数据存储介质，特征在于该三氮菁对应于以下通式
Figure A0281090700041
其中
R1和R2彼此独立地表示C1-到C16-烷基，C3-到C6-链烯基，C5-到C7-环烷基或C7-到C16-芳烷基，
X5表示N或C-R6，
X6表示N或C-R7，
R4到R7彼此独立地表示氢，C1-到C4-烷基，C1-到C4-烷氧基，氰基，C1-到C4-烷氧基羰基，硝基，单或双-C1-到C4-烷基胺基，N-C1-到C4-烷基-N-C7-到C15-芳烷基胺基，N-C1-到C4-烷基-N-C5-到C17-环烷基胺基，N-C1-到C4-烷基-N-C6-到C10-芳基胺基，C6-到C10-芳基胺基，吡咯烷基，哌啶基或吗啉基或
R4；R6和R5；R7彼此独立地形成-CH＝CH-CH＝CH-桥连基，它们能够被甲基，氯，甲氧基或氰基取代，和
An-表示阴离子。
5.三氮菁在一次可记录的光学数据存储介质的信息层中的应用，其中该三氮菁具有在420-650nm范围的最大吸收λmax2。
6.三氮菁在一次可记录的光学数据存储介质的信息层中的应用，其中数据存储介质利用蓝光激光来记录和读。
7.生产根据权利要求1的光学数据存储介质的方法，其特征在于，优选透明的，任选已涂敷了反射层的基材，涂敷有三氮菁，任选与合适的粘结剂和添加剂和任选的合适溶剂相结合，以及任选提供了反射层，附加的中间层和任选的保护层或附加基材或覆盖层。
8.根据权利要求1的光学数据存储介质，它是利用蓝光或红光，尤其是蓝光，尤其是蓝光激光进行记录的。
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