CN1469396A - 测试一组功能上独立的存储器和置换故障存储字的系统 - Google Patents
测试一组功能上独立的存储器和置换故障存储字的系统 Download PDFInfo
- Publication number
- CN1469396A CN1469396A CNA031413234A CN03141323A CN1469396A CN 1469396 A CN1469396 A CN 1469396A CN A031413234 A CNA031413234 A CN A031413234A CN 03141323 A CN03141323 A CN 03141323A CN 1469396 A CN1469396 A CN 1469396A
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- China
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
总的SRAM面积 | 22.15mm2(=24*0.923mm2) |
冗余存储字的面积 | 1.56mm2(=24*0.065mm2) |
熔丝盒面积 | 0.3mm2(=4*6*0.0127mm2) |
测试逻辑和地址寄存器的面积 | 0.24mm2(=4*0.059mm2) |
由于测试逻辑和冗余逻辑的总面积开销 | 2.1mm2(=1.56+0.3+0.24)或总RAM面积的9.5% |
对没有冗余的RAM的访问时间 | 3.1ns |
对有冗余的RAM的访问时间 | 3.9ns(考虑多路转换器级以及输出缓冲) |
估计的芯片产出(不带冗余) | 34.2% |
估计的芯片产出(带冗余) | 47.3% |
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02012318.8 | 2002-06-04 | ||
EP02012318A EP1369878A1 (en) | 2002-06-04 | 2002-06-04 | System for testing a group of functionally independent memories and for replacing failing memory words |
EP020123188 | 2002-06-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1469396A true CN1469396A (zh) | 2004-01-21 |
CN100483558C CN100483558C (zh) | 2009-04-29 |
Family
ID=29433104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031413234A Expired - Fee Related CN100483558C (zh) | 2002-06-04 | 2003-06-04 | 测试一组功能上独立的存储器和置换故障存储字的系统 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7085972B2 (zh) |
EP (1) | EP1369878A1 (zh) |
JP (1) | JP3880948B2 (zh) |
CN (1) | CN100483558C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103177768A (zh) * | 2011-12-26 | 2013-06-26 | 上海华虹Nec电子有限公司 | 一种存储器的bist地址扫描电路及其扫描方法 |
CN104094357A (zh) * | 2012-02-01 | 2014-10-08 | 英赛瑟库尔公司 | 执行并行存储测试的装置和方法 |
CN118471304A (zh) * | 2024-07-10 | 2024-08-09 | 此芯科技(无锡)有限公司 | 一种存储器自修复电路、方法及芯片 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7131039B2 (en) * | 2002-12-11 | 2006-10-31 | Hewlett-Packard Development Company, L.P. | Repair techniques for memory with multiple redundancy |
KR100498502B1 (ko) * | 2003-06-09 | 2005-07-01 | 삼성전자주식회사 | 기준 데이터를 스택시켜 레이턴시를 보상하는 반도체메모리 장치 및 그 테스트 방법 |
KR100510553B1 (ko) * | 2003-10-30 | 2005-08-26 | 삼성전자주식회사 | 메모리 장치 및 메모리 장치의 입력 신호 제어 방법 |
US7496819B2 (en) * | 2004-02-05 | 2009-02-24 | Broadcom Corporation | Custom logic BIST for memory controller |
EP1624465A1 (en) | 2004-08-06 | 2006-02-08 | STMicroelectronics S.r.l. | Programmable multi-mode built-in self-test and self-repair structure for embedded memory arrays |
JP2006107590A (ja) * | 2004-10-04 | 2006-04-20 | Nec Electronics Corp | 半導体集積回路装置及びそのテスト方法 |
US20060080583A1 (en) * | 2004-10-07 | 2006-04-13 | International Business Machines Corporation | Store scan data in trace arrays for on-board software access |
US20060282719A1 (en) * | 2005-05-13 | 2006-12-14 | Raguram Damodaran | Unique Addressable Memory Data Path |
US20070118778A1 (en) * | 2005-11-10 | 2007-05-24 | Via Telecom Co., Ltd. | Method and/or apparatus to detect and handle defects in a memory |
US7518918B2 (en) * | 2006-01-31 | 2009-04-14 | International Business Machines Corporation | Method and apparatus for repairing embedded memory in an integrated circuit |
US20080165599A1 (en) * | 2006-01-31 | 2008-07-10 | Gorman Kevin W | Design structure used for repairing embedded memory in an integrated circuit |
KR100770749B1 (ko) * | 2006-07-11 | 2007-10-26 | 삼성전자주식회사 | 셀프 테스트 기능을 추가한 메모리 컨트롤러 및 이를이용한 방법 |
JP5038788B2 (ja) * | 2007-06-18 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN101599288B (zh) * | 2008-06-04 | 2012-05-30 | 广明光电股份有限公司 | 备份数据重整方法 |
JP5279034B2 (ja) * | 2009-11-18 | 2013-09-04 | エヌイーシーコンピュータテクノ株式会社 | 故障検出回路 |
US8458545B2 (en) * | 2010-11-29 | 2013-06-04 | Stmicroelectronics International N.V. | Method and apparatus for testing of a memory with redundancy elements |
US8553488B2 (en) | 2011-06-10 | 2013-10-08 | Apple Inc. | Performing stuck-at testing using multiple isolation circuits |
US9053799B2 (en) * | 2013-02-07 | 2015-06-09 | Texas Instruments Incorporated | Optimizing fuseROM usage for memory repair |
JP6179149B2 (ja) * | 2013-03-19 | 2017-08-16 | 富士通株式会社 | データ処理装置 |
KR102117633B1 (ko) * | 2013-09-12 | 2020-06-02 | 에스케이하이닉스 주식회사 | 셀프 리페어 장치 |
US9490033B2 (en) * | 2013-09-27 | 2016-11-08 | Cavium, Inc. | Auto-blow memory repair |
US9372771B1 (en) | 2015-02-24 | 2016-06-21 | Freescale Semiconductor, Inc. | Method of grouping embedded memories for testing |
US11848067B2 (en) * | 2021-09-07 | 2023-12-19 | Micron Technology, Inc. | Apparatus including internal test mechanism and associated methods |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5574692A (en) * | 1995-06-07 | 1996-11-12 | Lsi Logic Corporation | Memory testing apparatus for microelectronic integrated circuit |
JP2738363B2 (ja) * | 1995-09-07 | 1998-04-08 | 日本電気株式会社 | 連想記憶装置 |
JPH09180492A (ja) * | 1995-12-26 | 1997-07-11 | Sony Corp | 半導体記憶装置 |
CN1133173C (zh) * | 1998-02-17 | 2003-12-31 | 因芬尼昂技术股份公司 | 用于检测数字半导体电路装置的测试电路和方法 |
US5982684A (en) * | 1998-05-28 | 1999-11-09 | Intel Corporation | Parallel access testing of a memory array |
JP2000132997A (ja) * | 1998-10-26 | 2000-05-12 | Nec Corp | 半導体集積回路 |
US6141267A (en) * | 1999-02-03 | 2000-10-31 | International Business Machines Corporation | Defect management engine for semiconductor memories and memory systems |
JP2000339229A (ja) * | 1999-05-31 | 2000-12-08 | Mitsubishi Electric Corp | メモリテスト回路 |
US6505313B1 (en) * | 1999-12-17 | 2003-01-07 | Lsi Logic Corporation | Multi-condition BISR test mode for memories with redundancy |
DE10002127B4 (de) * | 2000-01-19 | 2012-12-27 | Infineon Technologies Ag | Testverfahren für einen Datenspeicher |
US6536003B1 (en) * | 2000-02-08 | 2003-03-18 | Infineon Technologies Ag | Testable read-only memory for data memory redundant logic |
JP3866478B2 (ja) * | 2000-03-28 | 2007-01-10 | 株式会社東芝 | 半導体集積回路 |
-
2002
- 2002-06-04 EP EP02012318A patent/EP1369878A1/en not_active Ceased
-
2003
- 2003-05-30 US US10/449,580 patent/US7085972B2/en not_active Expired - Fee Related
- 2003-06-03 JP JP2003158551A patent/JP3880948B2/ja not_active Expired - Fee Related
- 2003-06-04 CN CNB031413234A patent/CN100483558C/zh not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103177768A (zh) * | 2011-12-26 | 2013-06-26 | 上海华虹Nec电子有限公司 | 一种存储器的bist地址扫描电路及其扫描方法 |
CN103177768B (zh) * | 2011-12-26 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | 一种存储器的bist地址扫描电路及其扫描方法 |
CN104094357A (zh) * | 2012-02-01 | 2014-10-08 | 英赛瑟库尔公司 | 执行并行存储测试的装置和方法 |
CN104094357B (zh) * | 2012-02-01 | 2017-03-29 | 英赛瑟库尔公司 | 执行并行存储测试的装置和方法 |
CN118471304A (zh) * | 2024-07-10 | 2024-08-09 | 此芯科技(无锡)有限公司 | 一种存储器自修复电路、方法及芯片 |
Also Published As
Publication number | Publication date |
---|---|
JP3880948B2 (ja) | 2007-02-14 |
JP2004039214A (ja) | 2004-02-05 |
US20030237033A1 (en) | 2003-12-25 |
EP1369878A1 (en) | 2003-12-10 |
US7085972B2 (en) | 2006-08-01 |
CN100483558C (zh) | 2009-04-29 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ELPIDA MEMORY INC. Free format text: FORMER OWNER: INFENNIAN TECHNOLOGIES AG Effective date: 20100824 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: MUNICH, GERMANY TO: TOKYO, JAPAN |
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TR01 | Transfer of patent right |
Effective date of registration: 20100824 Address after: Tokyo, Japan, Japan Patentee after: Elpida Memory Inc. Address before: Munich, Federal Republic of Germany Patentee before: Infennian Technologies AG |
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Owner name: PS4 LASCO CO., LTD. Free format text: FORMER OWNER: ELPIDA MEMORY INC. Effective date: 20130822 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130822 Address after: Luxemburg Luxemburg Patentee after: ELPIDA MEMORY INC. Address before: Tokyo, Japan, Japan Patentee before: Elpida Memory Inc. |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090429 Termination date: 20140604 |