CN1375840A - 电子元件及其制备方法 - Google Patents

电子元件及其制备方法 Download PDF

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CN1375840A
CN1375840A CN02105629A CN02105629A CN1375840A CN 1375840 A CN1375840 A CN 1375840A CN 02105629 A CN02105629 A CN 02105629A CN 02105629 A CN02105629 A CN 02105629A CN 1375840 A CN1375840 A CN 1375840A
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electronic component
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CN1208792C (zh
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高谷稔
远藤敏一
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TDK Corp
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Abstract

本发明要提供一种电子元件及其制造方法,它的生产周期缩短,裂缝和弯曲很难发生,并能降低成本。中心基板是通过把树脂或向此树脂中混入粉末状功能材料而制成的复合材料制成薄板并固化而制成的。在中心基板的前、后表面至少一面上用蒸镀、离子镀、离子束加工、气相沉积和喷镀中的一种,并经过图形制成导体图形。半固化的预浸料坯是通过把树脂或向此树脂中混入粉末状功能材料而成的复合材料制成薄板而成的。预浸料坯和中心基板交替层压,通过热压成型来制成层压层。

Description

电子元件及其制备方法
技术领域
本发明涉及具有一种由树脂或向此树脂中混入粉末状功能材料所形成的复合材料所构成的多层结构的电子元件及其制造方法。
背景技术
JP-A-5-267063中公开了一种用薄膜导体来制作多层结构电子元件的方法(如附图5)。如此图中所示，在制造电感器时，把原材料粉末混合来提供作为铁氧体的想要的功能(步骤S1)，再进行粒化和研磨(步骤S2)，然后用粘结剂与溶剂把以预定粒径混合和调节的物质制成瓷釉(步骤S3)。
层压和烧烤工序进行铁氧体浆料的网版印刷(步骤S4)，提高干燥炉内的温度进行预烘烤(步骤S5)，通过蒸镀、溅射和离子镀中的任意一种方法形成薄膜来植入电感器电极(步骤S6)，再网版印刷(步骤S7)铁氧体浆料，重复这些步骤几次直到得到具有想要数目的图形。同时在很多片电感器上进行电极图形的成型。
然后，把产品切成一个个的芯片(步骤S8)，再用涂镀、蒸镀或喷镀的方法在晶片侧面上植入外部电极(步骤S9)，接下来，对除外部电极以外的其它区域施加硅浸渍从而使晶片表面上的小孔被合成(硅)树脂浸渍(步骤S10)。如果必要的话，对外部电极进行电镀(步骤S11)。
为使用树脂或混合该树脂和功能材料(介质粉末或磁性粉末)而形成的复合材料及用蒸镀或类似方法形成的薄膜导体制造多层电子元件，此多层电子元件通过重复地刷镀复合材料浆料、热固和形成薄膜导体制得。
在用传统的重复刷镀和固化的方法制造电子元件时，存在一些问题：如生产成本高，生产周期很长。
而且，对于陶瓷，若要刷镀或在烘烤后形成薄的薄膜导体，就易出现基体的脆性的影响。或当基体上荷有应力时，裂缝和弯曲就容易发生。层压层本身要经过几个小时的烘烤，当层数增加时，就会花费很长的生产时间和成本。
而且对于树脂和复合材料，由于重复热固和刷镀也会在其上造成很大的应力载荷，使刷镀表面变粗糙，当层数增加时，就会难以生产。
发明内容
考虑到以上所说的问题，本发明的一个目的就是提供电子元件及其制造方法，这种方法可以使生产周期缩短，裂缝和弯曲很难发生，成本降低，而且就算有很多层也可以生产。
本发明的第一个方面，作为一种制造电子元件的方法，它的特征在于包括：把树脂或混合此树脂和粉末状功能材料而成的复合材料制成薄板，再使它固化成为中心基板；用蒸镀、离子镀、离子束加工、气相沉积和喷镀中的任何一种方法在中心基板的前、后表面至少一面上形成薄膜导体，接着制成布线图案；把树脂或混合此树脂和粉末状功能材料而成的复合材料制成预浸料坯薄板，交替层压半固化的预浸料坯和中心基板，接着进行热压成型制成多层的零件。
可以预见，如果中心基板和预浸料坯分开制造，并且层压和固化同时进行，就能缩短生产周期，降低成本，由于一旦整个的经过热压固化，裂缝和弯曲就很难发生，就算层数很多也可以生产。
而且，薄膜导体可以做得很薄，所以第一就有可能把元件做得很薄(这点在电容器中的影响特别显著)，第二提高图形的精确度和层与层之间的准确度，第三可以避免迁移，因为薄膜导体很薄所以树脂都埋在它的周围。在此项应用中“粉末状”这个词包括粒状、薄片状、针叶状、钉状或其它此类的形状。
本发明的第二个方面，作为一种电子元件，它的特征包括：一个中心基板，通过把树脂或混合树脂和粉末状功能材料而得的复合材料制成薄板再进行固化而成；在中心基板前后至少一个表面上通过成膜技术形成一定图形的薄膜导体，还有一个由树脂或混合此树脂和粉末状功能材料而成的复合材料制成的粘附层，穿插在中心基板和薄膜导体之间；其中由中心基板和用作粘附层预浸料坯组成的层压层由热压进行成型。
如果电子元件具有第一个方面中所提到的层压结构，生产周期可以缩短，成本可以降低，还可以避免裂缝和弯曲的发生。
本发明的第三个方面，作为电子元件，在第二个方面中所说的薄膜导体的厚度小于5微米。
当厚度大于5微米时，薄膜的制作时间太长，很难缩短生产周期。因为厚度限制小于5微米，就可以避免生产周期变得太长。当厚度小于1微米时，导体的电阻变大，所以要把Q值保持在预定的水平，薄膜导体的厚度最好大于1微米。不过对于允许大量的损耗的电容或噪声抑止电路来说，薄膜导体的厚度可以小于1微米，但要大于0.3微米。
此外，对于本发明所述的电子元件，其中用的树脂，至少有选自环氧树脂、酚树脂、非饱和聚酯树脂、乙烯基酯树脂、聚酰亚胺树脂、氰酸基酯树脂、联苯醚树脂、延胡索酸酯树脂、聚丁二烯树脂、和乙烯基·苄基树脂中的一种热固性树脂，或是选自芳族聚酯树脂、聚苯硫基树脂、聚对苯二甲酸乙二醇酯树脂、聚对苯二甲酸丁二醇酯树脂、聚乙烯硫基树脂、聚乙烯酮醚树脂、聚四氟乙烯树脂、多芳基化合物树脂和接枝树脂中的至少一种热塑性树脂，或由至少一种热固性树脂和至少一种热塑性树脂组成的合成树脂。
此外，对于本发明所述的电子元件，其中所说的粉末状功能材料，至少有一种铁氧体磁性材料是选自锰-镁-锌基磁性材料、镍-锌基磁性材料、和锰-锌基磁性材料，或者至少一种铁磁性金属磁性材料选自羰基铁、铁-硅基合金、铁-铝-硅基合金、铁-镍基合金和非晶态(铁基或钴基)合金，或者至少一种电介质材料选自BaO-TiO2-Nd2O3基、BaO-TiO2-SnO2基、PbO-CaO基、TiO2基、BaTiO3基、PbTiO3基、SrTiO3基、CaTiO3基、Al2O3基、BiTiO4基、MgTiO3基、(Ba、Sr)TiO3基、Ba(Ti、Zr)O3基、BaTiO3-SiO2基、BaO-SiO2基、CaWO4基、Ba(Mg、Nb)O3基、Ba(Mg、Ta)O3基、Ba(Co、Mg、Nb)O3基、Ba(Co、Mg、Ta)O3基、Mg2SiO4基、ZnTiO3基、SrZrO3基、ZrTiO4基、(Zr、Sn)TiO4基、BaO-TiO2-Sm2O3基、PbO-BaO-Nd2O3-TiO2基、(Bi2O3、PbO)-BaO-TiO2基、La2Ti2O7基、Nd2Ti2O7基、(Li、Sm)TiO3基、Ba(Zn、Ta)O3基、Ba(Zn、Nb)O3基和Sr(Zn、Nb)O3基的电介质材料，或者是含有以上提到的环氧体磁性材料、铁磁性金属磁性材料和介质材料中的至少两种的复合功能材料。
附图说明
图1是本发明所述的电子元件的制作方法一个实施例的工艺流程图；
图2A到2E是应用本发明所述的电子元件的制造方法来制造一部分零件的生产过程的解释图；
图3A到3E是应用本发明所述的电子元件的制造方法来制造剩余部分零件的生产过程的解释图；
图4A是本发明所述电子元件的一个具体实例的透视图，图4B是层结构视图；
图5是传统的电子元件制造方法的生产过程。
具体实施方式
图1是本发明所述的电子元件的制造方法一个实施例的工艺流程图，图2和图3是各步的解释图。
在图1中的步骤S1中，为了制造复合材料，向树脂中加入粉末状功能材料(磁性材料粉末或电介质材料粉末)和一种溶剂如甲苯，制成浆料。这里的树脂，至少有选自环氧树脂、酚树脂、非饱和聚酯树脂、乙烯基酯树脂、聚酰亚胺树脂、氰酸基酯树脂、联苯醚树脂、延胡索酸酯树脂、聚丁二烯树脂、和乙烯基·苄基树脂中的一种热固性树脂，或是选自芳族聚酯树脂、聚苯硫基树脂、聚对苯二甲酸乙二醇酯树脂、聚对苯二甲酸丁二醇酯树脂、聚乙烯硫基树脂、聚乙烯酮醚树脂、聚四氟乙烯树脂、多芳基化合物树脂和接枝树脂中的至少一种热塑性树脂，或是由至少一种热固性树脂和至少一种热塑性附脂组成的合成树脂。
要和这些树脂混和的粉末状磁性材料，至少有一种铁氧体磁性材料是选自锰-镁-锌基磁性材料、镍-锌基磁性材料、和锰-锌基磁性材料，或者至少一种铁磁性金属磁性材料选自羰基铁、铁-硅基合金、铁-铝硅基合金、铁-镍基合金和非晶态(铁基或钴基)合金，或者至少一种电介质材料选自BaO-TiO2-Nd2O3基、BaO-TiO2-SnO2基、PbO-CaO基、TiO2基、BaTiO3基、PbTiO3基、SrTiO3基、CaTiO3基、Al2O3基、BiTiO4基、MgTiO3基、(Ba、Sr)TiO3基、Ba(Ti、Zr)O3基、BaTiO3-SiO2基、BaO-SiO2基、CaWO4基、Ba(Mg、Nb)O3基、Ba(Mg、Ta)O3基、Ba(Co、Mg、Nb)O3基、Ba(Co、Mg、Ta)O3基、Mg2SiO4基、ZnTiO3基、SrZrO3基、ZrTiO4基、(Zr、Sn)TiO4基、BaO-TiO2-Sm2O3基、PbO-BaO-Nd2O3-TiO2基、(Bi2O3、PbO)-BaO-TiO2基、La2Ti2O7基、Nd2Ti2O7基、(Li、Sm)TiO3基、Ba(Zn、Ta)O3基、Ba(Zn、Nb)O3基和Sr(Zn、Nb)O3基的电介质材料，或者是含有以上提到的环氧体磁性材料、铁磁性金属磁性材料和介质材料中的至少两种的复合功能材料。
为了方便实行本发明，当然也可以用其它的树脂、磁性材料粉末和电介质材料粉末。
在图1的步骤S2是如图2A所示预浸料坯的制作方法。即，把卷在轴3上的玻璃布拉入装有复合材料浆料2的容器1中，并浸入浆料2中，然后让涂上了浆料的玻璃布4经过干燥器5烘干，再卷在轴6上作为坯材7。接着用切割机8把坯材7切成想要的大小，(如图2B所示)，就得到了含有玻璃布的预浸料坯9。
把按上述方法制得的预浸料坯分别用于图1中左边的S3-S6步和右边的S7步，用做中心基板9a(如图2C)或用做预浸料坯9b作为半固化的粘结层(如图2F)。在制作中心基板时(步骤S3)，例如当复合材料浆料用的是苯甲基乙烯树脂时，要在200摄氏度下处理两小时。
在步骤S7中对预浸料坯9b的半固化工序，当复合材料2用的是苯甲基乙烯树脂时，要在110摄氏度下处理1小时。
在步骤S4的薄膜导体的形成过程中(如图2D)，应用薄膜形成技术如蒸发、离子镀、离子束加工、喷镀处理和化学气相沉积等在中心基板9a的前表面和后表面上形成薄膜导体10。在这里，铜、银、镍、锡、锌或铝都可以用作薄膜导体10。
在图形加工步骤S5中，首先在中心基板9a上形成一保护膜，其后，通过暴露用作形成导体层图形，部分地除去保护膜，在已除去保护膜区域上刻蚀薄膜导体，再除去保护膜，就得到如图2E所示的组成图形的薄膜导体11。由于在一张中心基板9a上薄膜导体11的数量很多，而且横竖排列了很多相同的图形，所以除了用上述的图形加工方法外还可以用掩模版来制作薄膜导体图形。
在步骤S6内部中孔的加工中，(如图3A所示)用钻孔机、冲压机或激光加工出中孔12，再在它的内表面镀上导电体13，中心基板9a的两表面上的图形11是相互连接在一起的，为防止增加薄膜导体11的厚度，当在中孔12的内壁上镀导体13时，最好先把薄膜导体11遮起来，如加一保护膜涂层。
在步骤S8的压制成型加工中，如图3B，中心基板9a和作为粘结层的预浸料坯9b交替层压，再在足够高的固化温度下热压充分长的时间。在此预浸料坯9b也被充分固化了，于是就得到图3C所示的均匀层压层14。
步骤S9是制作通孔，如图3D，先用钻孔机、冲压机或激光加工出通孔15，再在它的内壁上镀上导体16，中心基板9a两表面上的图形11之间或这些内部图形与图形11之间，换句话说，就是内部图形11与内部图形11之间也是相互连接的。
在步骤S10的镀敷和切板加工中，先镀上用做焊层的镀层，再切成一片片的芯片。在图3E中，装配件17的安装，是在切成一片片的芯片之前或之后焊上的。
把中心基板9a和预浸料坯9b分开来制作和层压，并同时进行固化，由此就可以缩短生产周期和降低生产成本。另外一旦整个的经过热压固化后，裂缝和弯曲就很难发生。当图形11是用传统的铜箔来制作时，所用箔层的厚度一般在18微米左右。而当图形使用的是本发明所述的薄膜导体11来制作时，薄膜的厚度可以轻易的做到9个微米以下。因此由于导体11的厚度不均所引起的层压层的凹凸不平也会减少，制作的电容器或电感器时的性质偏差也就很小。
薄膜导体10的厚度最好小于5个微米，当薄膜导体10的厚度大于5个微米时，形成薄膜就需要很长的时间，这样就很难缩短生产周期。把厚度限制在小于5个微米可以避免生产周期变得太长，当厚度小于1微米时，电阻就会变大。因此为把Q值保持在一个预定的水平，薄膜导体的厚度最好大于1微米。不过对于允许大量的损耗的电容器或噪声抑止电路来说，薄膜导体的厚度可以小于1微米，但要大于0.3微米。
图4A是本发明所述的电子元件的一个实例的透视图，图4B是层结构视图。本例是一个电压控振荡器，9a是中心基板，9b是预浸料坯或粘结在中心基板9a上固化了的预浸料坯。标号19指的是一个表面图形，20是电容器电极，21是接地电极，它包围着条纹线22在其间形成一个共振器。标号17指的是半导体元件如晶体管或变容二极管、或者是装配在上边的大容量电容、感应器芯片或芯片电阻器等元件。
除了上面所提到的例子外，本发明还可用于制作电容器、感应器、LC过滤器、LCR过滤器或整合了半导体零件和无源元件(电路)的各种不同模块，即混合集成模块。为使本发明更实用，可以只在组成电子元件的一部分或所有部分的中心基板9a的前和后表面其中一个面上形成薄膜导体11。
跟应用铜箔的传统工艺相比，本发明中的薄膜导体可以使电子元件做的更薄。特别当传统的电子元件有8层18微米厚的铜箔(一般用作导线分布图(印刷电路))和7层60微米厚的树脂层(做为保护膜)时，电子元件的总厚度是564微米(60×7+18×8＝564微米)。
而在本发明的例子中，当薄膜导体11的厚度是3微米而其它条件(树脂层的厚度和树脂层及导电层的层数)相同时，本发明的电子元件的厚度是444微米(60×7+3×8＝444微米)。这样，本发明所述的电子元件的厚度比传统的要薄120微米。
而且，对于传统工艺，导线分布图的最小宽度是约50微米，图形间的最小距离也是约50微米。然而对于本发明，导线分布图的最小宽度是约10微米，图形间的最小距离也是约10微米。由此，导线分布图就可以很精细，图形的精度也可以提高。
对于本发明，中心基板和预浸料坯分开来制作，另一方面固化同时进行层压来制作电子元件就可以缩短生产同期和降低生产成本。一旦整个的经过热压固化后，裂缝和弯曲就很难发生。通过把导体做的很薄，就可能把图形做得更精细，把元件做得更薄，提高图形的精度和层与层之间准确度，还可避免迁移。
根据本发明，薄膜导体的厚度可做到小于5微米，这样导体的厚度不会大，就可以避免时间变得太长。

Claims (10)

1、一种电子元件，包括：
通过把树脂或向此树脂中混入粉末状功能材料而制成的复合材料制成薄板并固化所形成的中心基板；
在中心基板的前、后表面至少一面上用薄膜形成技术制成并成形的薄膜导体；和
介于带有薄膜导体的中心基板之间的由树脂或向此树脂中混入粉末状功能材料而制成的复合材料制成的粘结层，
其中，由中心基板和在中心基板间用作粘结层的预浸料坯制成的层压层是通过热压来成型的。
2、如权利要求1所述的电子元件，其特征在于薄膜导体的厚度小于5微米。
3、如权利要求1所述的电子元件，其特征在于树脂包括至少一种选自环氧树脂、酚树脂、不饱和聚酯树脂、乙烯基酯树脂、聚酰亚胺树脂、氰酸基酯树脂、联苯醚树脂、延胡索酸酯树脂、聚丁二烯树脂、和乙烯基·苄基树脂中的热固性树脂。
4、如权利要求1所述的电子元件，其特征在于树脂包括至少一种选自芳族聚酯树脂、聚苯硫基树脂、聚对苯二甲酸乙二醇酯树脂、聚对苯二甲酸丁二醇酯树脂、聚乙烯硫基树脂、聚乙烯酮醚树脂、聚四氟乙烯树脂、多芳基化合物树脂和接枝树脂中的热塑性树脂。
5、如权利要求1所述的电子元件，其特征在于树脂包括由至少一种热固性树脂和至少一种热塑性树脂组成的合成树脂，
这里所说的热固性树脂是选自环氧树脂、酚树脂、非饱和聚酯树脂、乙烯基酯树脂、聚酰亚胺树脂、氰酸基酯树脂、联苯醚树脂、延胡索酸酯树脂、聚丁二烯树脂、和乙烯基·苄基树脂，
这里所说的热塑性树脂选自芳族聚酯树脂、聚苯硫基树脂、聚对苯二甲酸乙二醇酯树脂、聚对苯二甲酸丁二醇酯树脂、聚乙烯硫基树脂、聚乙烯酮醚树脂、聚四氟乙烯树脂、多芳基化合物树脂和接枝树脂。
6、如权利要求1所述的电子元件，其特征在于粉末状功能材料包括至少一种选自锰-镁-锌基磁性材料、镍-锌基磁性材料、和锰-锌基磁性材料的铁氧体磁性材料。
7、如权利要求1所述的电子元件，其特征在于粉末状功能材料包括至少一种选自羰基铁、铁-硅基合金、铁-铝-硅基合金、铁-镍基合金和非晶态(铁基或钴基)合金的铁磁性金属磁性材料。
8、如权利要求1所述的电子元件，其特征在于粉末状功能材料包括至少一种选自BaO-TiO2-Nd2O3基、BaO-TiO2-SnO2基、PbO-CaO基、TiO2基、BaTiO3基、PbTiO3基、SrTiO3基、CaTiO3基、Al2O3基、BiTiO4基、MgTiO3基、(Ba、Sr)TiO3基、Ba(Ti、Zr)O3基、BaTiO3-SiO2基、BaO-SiO2基、CaWO4基、Ba(Mg、Nb)O3基、Ba(Mg、Ta)O3基、Ba(Co、Mg、Nb)O3基、Ba(Co、Mg、Ta)O3基、Mg2SiO4基、ZnTiO3基、SrZrO3基、ZrTiO4基、(Zr、Sn)TiO4基、BaO-TiO2-Sm2O3基、PbO-BaO-Nd2O3-TiO2基、(Bi2O3、PbO)-BaO-TiO2基、La2Ti2O7基、Nd2Ti2O7基、(Li、Sm)TiO3基、Ba(Zn、Ta)O3基、Ba(Zn、Nb)O3基和Sr(Zn、Nb)O3基的电介质材料。
9、如权利要求1所述的电子元件，其特征在于粉末状功能材料包括由所提到的铁氧体磁性材料、铁磁性金属磁性材料和介质材料中的至少两种所组成的复合功能材料，
这里所说的铁氧体磁性材料选自锰-镁-锌基磁性材料、镍-锌基磁性材料、和锰-锌基磁性材料，
这里所说的铁磁性金属磁性材料选自羰基铁、铁-硅基合金、铁-铝-硅基合金、铁-镍基合金和非晶态(铁基或钴基)合金，
这里所说的电介质材料选自BaO-TiO2-Nd2O3基、BaO-TiO2-SnO2基、PbO-CaO基、TiO2基、BaTiO3基、PbTiO3基、SrTiO3基、CaTiO3基、Al2O3基、BiTiO4基、MgTiO3基、(Ba、Sr)TiO3基、Ba(Ti、Zr)O3基、BaTiO3-SiO2基、BaO-SiO2基、CaWO4基、Ba(Mg、Nb)O3基、Ba(Mg、Ta)O3基、Ba(Co、Mg、Nb)O3基、Ba(Co、Mg、Ta)O3基、Mg2SiO4基、ZnTiO3基、SrZrO3基、ZrTiO4基、(Zr、Sn)TiO4基、BaO-TiO2-Sm2O3基、PbO-BaO-Nd2O3-TiO2基、(Bi2O3、PbO)-BaO-TiO2基、La2Ti2O7基、Nd2Ti2O7基、(Li、Sm)TiO3基、Ba(Zn、Ta)O3基、Ba(Zn、Nb)O3基和Sr(Zn、Nb)O3基的电介质材料。
10、一种制造电子元件的方法，步骤包括：
把树脂或向此树脂中混入粉末状功能材料而制成的复合材料制成薄板并固化形成中心基板，
在中心基板的前、后表面至少一面上用蒸镀、离子镀、离子束加工和气相沉积中任一种方法制成并成形的薄膜导体，
把树脂或向此树脂中混入粉末状功能材料而制成的复合材料制成预浸料坯薄板，交替层压半固化的预浸料坯和中心基板，
接下来热压成型为层压元件。
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