KR100687557B1 - 뒤틀림이 개선된 기판 및 기판형성방법 - Google Patents
뒤틀림이 개선된 기판 및 기판형성방법 Download PDFInfo
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- KR100687557B1 KR100687557B1 KR1020050118751A KR20050118751A KR100687557B1 KR 100687557 B1 KR100687557 B1 KR 100687557B1 KR 1020050118751 A KR1020050118751 A KR 1020050118751A KR 20050118751 A KR20050118751 A KR 20050118751A KR 100687557 B1 KR100687557 B1 KR 100687557B1
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- 239000000758 substrate Substances 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 40
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000010410 layer Substances 0.000 claims abstract description 70
- 239000012792 core layer Substances 0.000 claims abstract description 49
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 36
- 239000003365 glass fiber Substances 0.000 claims abstract description 10
- 229920003235 aromatic polyamide Polymers 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 5
- 239000004760 aramid Substances 0.000 claims abstract description 4
- 238000009413 insulation Methods 0.000 claims abstract description 3
- 238000003475 lamination Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 33
- 239000012779 reinforcing material Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000000052 comparative effect Effects 0.000 description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 13
- 238000013461 design Methods 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000014616 translation Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Laminated Bodies (AREA)
Abstract
Description
층 | 두께(㎛) |
구리+솔더 레지스트층(121) | 20 |
구리+프리프래그층(123) | 18 |
구리+프리프래그층(125) | 18 |
구리+솔더 레지스트층(127) | 20 |
각 프리프래그층 | 45 |
코어층 | 150 |
각 솔더 레지스트층 | 17 |
온도(℃) | 25 | 50 | 125 | 175 |
CTE(α) | 1.64e-5 | 1.67 e-5 | 1.73 e-5 | 1.771 e-5 |
탄성계수(Mpa) | 30000 | |||
Poisson비 | 0.343 |
온도(℃) | 20 | 80 | 120 | 150 | 180 |
탄성계수(Mpa) | 3221 | 2621 | 654 | 118 | 93 |
Poisson비 | 0.3 | ||||
온도(℃) | 25 | 50 | 120 | 150 | 180 |
CTE(α) | 4 e-5 | 5 e-5 | 0.0001 | 0.00013 | 0.00016 |
E1 | E2 | E3 | γ12 | γ13 | γ23 | G12 | G13 | G23 |
255000 | 21000 | 6000 | 0.15 | 0.3 | 0.3 | 10200 | 2310 | 2310 |
α11 | α22 | α33 | ||||||
1.4 e-5 | 1.7 e-5 | 4 e-5 |
보강기재의 적층각(°) | 실시예 1 | 비교예 1 | 비교예 2 |
코어층 | 45 | 0 | 0 |
PPG #1 | 30 | 0 | 45 |
PPG #2 | 45 | 0 | 0 |
뒤틀림(mm) | 1.509 | 2.272 | 12.112 |
보강기재의 적층각(°) | 실시예 2 | 비교예 3 |
코어 #1 | 30 | 0 |
코어 #2 | 30 | 0 |
코어 #3 | 0 | 45 |
뒤틀림(mm) | 0.494 | 4.600 |
Claims (15)
- 기판의 중심에 포함되는 절연성의 코어층에 있어서, 상기 코어층에 포함되는 둘 이상의 보강기재들 중 적어도 두 층은 서로 적층각을 달리하는 기판.
- 청구항 1에 있어서,도전층 간의 절연을 위해 포함되는 하나 이상의 프리프래그층을 더 포함하는 기판.
- 청구항 2에 있어서,상기 코어층에 포함되는 적어도 하나의 상기 보강기재와 상기 프리프래그층에 포함되는 적어도 하나의 상기 보강기재는 서로 적층각을 달리하는 기판.
- 청구항 1 또는 3에 있어서,상기 적층각은 0° 내지 90°인 기판.
- 청구항 1에 있어서,상기 코어층에 포함되는 보강기재는 유리섬유, 유리 웹(web), 아라미드(aramid) 및 종이로 이루어진 군으로부터 선택되는 하나 이상의 기재를 포함하는 기판.
- 청구항 2에 있어서,상기 프리프래그층에 포함되는 보강기재는 유리섬유, 유리 웹(web), 아라미드(aramid) 및 종이로 이루어진 군으로부터 선택되는 하나 이상의 기재를 포함하는 기판.
- 청구항 2에 있어서,상기 코어층에 포함되는 보강기재 및 상기 프리프래그층에 포함되는 보강기재는 유리 섬유인 기판.
- 청구항 1에 있어서,상기 코어층에 포함되는 보강기재는 직조 형태를 이루는 기판.
- 청구항 2에 있어서,상기 프리프래그층에 포함되는 보강기재는 직조 형태를 이루는 기판.
- 청구항 1 내지 3 중 어느 한 항에 있어서,상기 기판은 뒤틀림이 개선된 인쇄회로기판인 기판.
- 청구항 1 내지 3 중 어느 한 항에 있어서,상기 기판은 뒤틀림이 개선된 반도체 패키지 기판인 기판.
- 둘 이상의 보강기재들을 포함하는 코어층에 있어서, 상기 보강기재들 중 적어도 두 층은 서로 적층각을 달리하여 적층되는 단계; 및상기 코어층의 상부에 도전층을 형성하는 단계를 포함하는 기판형성방법.
- 청구항 12에 있어서,상기 도전층의 상부에 하나 이상의 프리프래그층을 형성하는 단계를 더 포함하는 기판형성방법.
- 청구항 13에 있어서,상기 코어층에 포함되는 적어도 하나의 상기 보강기재와 상기 프리프래그층에 포함되는 적어도 하나의 보강기재는 서로 적층각을 달리하는 기판형성방법.
- 청구항 12 또는 14에 있어서,상기 적층각은 0° 내지 90°인 기판형성방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050118751A KR100687557B1 (ko) | 2005-12-07 | 2005-12-07 | 뒤틀림이 개선된 기판 및 기판형성방법 |
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KR1020050118751A KR100687557B1 (ko) | 2005-12-07 | 2005-12-07 | 뒤틀림이 개선된 기판 및 기판형성방법 |
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Publication Number | Publication Date |
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KR100687557B1 true KR100687557B1 (ko) | 2007-02-27 |
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KR1020050118751A KR100687557B1 (ko) | 2005-12-07 | 2005-12-07 | 뒤틀림이 개선된 기판 및 기판형성방법 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210119792A (ko) | 2020-03-25 | 2021-10-06 | 한화솔루션 주식회사 | 접힘 시 고정력이 증대된 연성인쇄회로기판 |
US11437308B2 (en) | 2019-03-29 | 2022-09-06 | Absolics Inc. | Packaging glass substrate for semiconductor, a packaging substrate for semiconductor, and a semiconductor apparatus |
US11469167B2 (en) | 2019-08-23 | 2022-10-11 | Absolics Inc. | Packaging substrate having electric power transmitting elements on non-circular core via of core vias and semiconductor device comprising the same |
US11652039B2 (en) | 2019-03-12 | 2023-05-16 | Absolics Inc. | Packaging substrate with core layer and cavity structure and semiconductor device comprising the same |
US11967542B2 (en) | 2019-03-12 | 2024-04-23 | Absolics Inc. | Packaging substrate, and semiconductor device comprising same |
US11981501B2 (en) | 2019-03-12 | 2024-05-14 | Absolics Inc. | Loading cassette for substrate including glass and substrate loading method to which same is applied |
US12165979B2 (en) | 2019-03-07 | 2024-12-10 | Absolics Inc. | Packaging substrate and semiconductor apparatus comprising same |
US12198994B2 (en) | 2019-03-12 | 2025-01-14 | Absolics Inc. | Packaging substrate and method for manufacturing same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11298153A (ja) | 1998-04-13 | 1999-10-29 | Shin Kobe Electric Mach Co Ltd | 多層プリント回路板 |
KR20020049720A (ko) * | 2000-12-20 | 2002-06-26 | 윤종용 | 박형 웨이퍼 및 그 제조방법 |
KR20020069146A (ko) * | 2001-02-22 | 2002-08-29 | 티디케이가부시기가이샤 | 전자 부품 및 이의 제조 방법 |
JP2003001656A (ja) | 2001-06-26 | 2003-01-08 | Matsushita Electric Works Ltd | 積層板の製造方法 |
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2005
- 2005-12-07 KR KR1020050118751A patent/KR100687557B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11298153A (ja) | 1998-04-13 | 1999-10-29 | Shin Kobe Electric Mach Co Ltd | 多層プリント回路板 |
KR20020049720A (ko) * | 2000-12-20 | 2002-06-26 | 윤종용 | 박형 웨이퍼 및 그 제조방법 |
KR20020069146A (ko) * | 2001-02-22 | 2002-08-29 | 티디케이가부시기가이샤 | 전자 부품 및 이의 제조 방법 |
JP2003001656A (ja) | 2001-06-26 | 2003-01-08 | Matsushita Electric Works Ltd | 積層板の製造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12165979B2 (en) | 2019-03-07 | 2024-12-10 | Absolics Inc. | Packaging substrate and semiconductor apparatus comprising same |
US11652039B2 (en) | 2019-03-12 | 2023-05-16 | Absolics Inc. | Packaging substrate with core layer and cavity structure and semiconductor device comprising the same |
US11967542B2 (en) | 2019-03-12 | 2024-04-23 | Absolics Inc. | Packaging substrate, and semiconductor device comprising same |
US11981501B2 (en) | 2019-03-12 | 2024-05-14 | Absolics Inc. | Loading cassette for substrate including glass and substrate loading method to which same is applied |
US12198994B2 (en) | 2019-03-12 | 2025-01-14 | Absolics Inc. | Packaging substrate and method for manufacturing same |
US11437308B2 (en) | 2019-03-29 | 2022-09-06 | Absolics Inc. | Packaging glass substrate for semiconductor, a packaging substrate for semiconductor, and a semiconductor apparatus |
US11469167B2 (en) | 2019-08-23 | 2022-10-11 | Absolics Inc. | Packaging substrate having electric power transmitting elements on non-circular core via of core vias and semiconductor device comprising the same |
US11728259B2 (en) | 2019-08-23 | 2023-08-15 | Absolics Inc. | Packaging substrate having electric power transmitting elements on non-circular core via of core vias and semiconductor device comprising the same |
US12027454B1 (en) | 2019-08-23 | 2024-07-02 | Absolics Inc. | Packaging substrate having electric power transmitting elements on non-circular core via of core vias and semiconductor device comprising the same |
KR20210119792A (ko) | 2020-03-25 | 2021-10-06 | 한화솔루션 주식회사 | 접힘 시 고정력이 증대된 연성인쇄회로기판 |
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