CN1371127A - 引线框及使用该引线框的树脂密封型半导体装置制造方法 - Google Patents
引线框及使用该引线框的树脂密封型半导体装置制造方法 Download PDFInfo
- Publication number
- CN1371127A CN1371127A CN01141867A CN01141867A CN1371127A CN 1371127 A CN1371127 A CN 1371127A CN 01141867 A CN01141867 A CN 01141867A CN 01141867 A CN01141867 A CN 01141867A CN 1371127 A CN1371127 A CN 1371127A
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- Prior art keywords
- lead frame
- connecting portion
- resin material
- outer frame
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000011347 resin Substances 0.000 title claims abstract description 134
- 229920005989 resin Polymers 0.000 title claims abstract description 134
- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 238000007789 sealing Methods 0.000 claims abstract description 148
- 238000005520 cutting process Methods 0.000 claims abstract description 132
- 239000000463 material Substances 0.000 claims abstract description 87
- 238000000034 method Methods 0.000 claims description 34
- 238000000926 separation method Methods 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 abstract description 2
- 230000000717 retained effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
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- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001038220A JP3628971B2 (ja) | 2001-02-15 | 2001-02-15 | リードフレーム及びそれを用いた樹脂封止型半導体装置の製造方法 |
JP038220/2001 | 2001-02-15 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101037447A Division CN100459113C (zh) | 2001-02-15 | 2001-09-21 | 引线框及使用该引线框的树脂密封型半导体装置制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1371127A true CN1371127A (zh) | 2002-09-25 |
CN1219321C CN1219321C (zh) | 2005-09-14 |
Family
ID=18901240
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011418672A Expired - Fee Related CN1219321C (zh) | 2001-02-15 | 2001-09-21 | 引线框及使用该引线框的树脂密封型半导体装置制造方法 |
CNB2005101037447A Expired - Fee Related CN100459113C (zh) | 2001-02-15 | 2001-09-21 | 引线框及使用该引线框的树脂密封型半导体装置制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101037447A Expired - Fee Related CN100459113C (zh) | 2001-02-15 | 2001-09-21 | 引线框及使用该引线框的树脂密封型半导体装置制造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6603194B2 (zh) |
EP (1) | EP1239517B1 (zh) |
JP (1) | JP3628971B2 (zh) |
KR (1) | KR100559653B1 (zh) |
CN (2) | CN1219321C (zh) |
DE (1) | DE60136525D1 (zh) |
TW (1) | TW541678B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101431062B (zh) * | 2007-09-20 | 2011-09-07 | 三星电子株式会社 | 智能卡用载带基板和智能卡用半导体模块 |
CN102449750A (zh) * | 2010-09-25 | 2012-05-09 | 华为技术有限公司 | 将芯片焊接至电子电路 |
CN102593092A (zh) * | 2012-03-22 | 2012-07-18 | 天水华天微电子股份有限公司 | 一种引线框架 |
CN107710393A (zh) * | 2015-09-24 | 2018-02-16 | 东和株式会社 | 树脂密封装置和树脂密封方法、电子零件的制造方法、以及引线框架 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3628971B2 (ja) * | 2001-02-15 | 2005-03-16 | 松下電器産業株式会社 | リードフレーム及びそれを用いた樹脂封止型半導体装置の製造方法 |
JP2003023134A (ja) * | 2001-07-09 | 2003-01-24 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2003100782A (ja) * | 2001-09-20 | 2003-04-04 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
JP2003338587A (ja) * | 2002-05-21 | 2003-11-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
EP1549472B1 (en) * | 2002-08-05 | 2008-09-24 | Nxp B.V. | Method for manufacturing a packaged semiconductor device, packaged semiconductor device obtained with such a method and metal carrier suitable for use in such a method |
US6872599B1 (en) * | 2002-12-10 | 2005-03-29 | National Semiconductor Corporation | Enhanced solder joint strength and ease of inspection of leadless leadframe package (LLP) |
US7008825B1 (en) * | 2003-05-27 | 2006-03-07 | Amkor Technology, Inc. | Leadframe strip having enhanced testability |
JP2006261525A (ja) * | 2005-03-18 | 2006-09-28 | Disco Abrasive Syst Ltd | パッケージ基板 |
US7943431B2 (en) * | 2005-12-02 | 2011-05-17 | Unisem (Mauritius) Holdings Limited | Leadless semiconductor package and method of manufacture |
JP2008171864A (ja) * | 2007-01-09 | 2008-07-24 | New Japan Radio Co Ltd | 半導体装置の製造方法および半導体装置用基板 |
JP5122835B2 (ja) * | 2007-02-27 | 2013-01-16 | ローム株式会社 | 半導体装置、リードフレームおよび半導体装置の製造方法 |
JP2008235557A (ja) * | 2007-03-20 | 2008-10-02 | Rohm Co Ltd | リードフレームおよび半導体装置 |
JP5144294B2 (ja) * | 2008-02-06 | 2013-02-13 | オンセミコンダクター・トレーディング・リミテッド | リードフレームおよびそれを用いた回路装置の製造方法 |
JP5247626B2 (ja) * | 2008-08-22 | 2013-07-24 | 住友化学株式会社 | リードフレーム、樹脂パッケージ、半導体装置及び樹脂パッケージの製造方法 |
US8609467B2 (en) | 2009-03-31 | 2013-12-17 | Sanyo Semiconductor Co., Ltd. | Lead frame and method for manufacturing circuit device using the same |
JP2011077092A (ja) * | 2009-09-29 | 2011-04-14 | New Japan Radio Co Ltd | リードフレームおよびそれを用いた半導体装置の製造方法 |
JP5215980B2 (ja) * | 2009-10-30 | 2013-06-19 | 株式会社三井ハイテック | 半導体装置の製造方法 |
KR101905526B1 (ko) * | 2012-03-29 | 2018-10-08 | 해성디에스 주식회사 | 수지가 충진될 수 있는 리드 프레임 스트립 및 그 리드 프레임 스트립과 반도체 패키지 기판을 제조하는 방법 |
CN107346763B (zh) * | 2016-05-06 | 2020-04-17 | 无锡华润安盛科技有限公司 | 一种ipm模块的引线框 |
Family Cites Families (18)
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JP2001077265A (ja) | 1999-09-01 | 2001-03-23 | Matsushita Electronics Industry Corp | 樹脂封止型半導体装置の製造方法 |
JP2001077235A (ja) | 1999-09-06 | 2001-03-23 | Mitsui High Tec Inc | 半導体素子搭載用基板 |
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JP3547704B2 (ja) | 2000-06-22 | 2004-07-28 | 株式会社三井ハイテック | リードフレーム及び半導体装置 |
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JP4416067B2 (ja) | 2000-09-26 | 2010-02-17 | 大日本印刷株式会社 | 樹脂封止型半導体装置の製造方法 |
US6448107B1 (en) * | 2000-11-28 | 2002-09-10 | National Semiconductor Corporation | Pin indicator for leadless leadframe packages |
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JP3628971B2 (ja) * | 2001-02-15 | 2005-03-16 | 松下電器産業株式会社 | リードフレーム及びそれを用いた樹脂封止型半導体装置の製造方法 |
-
2001
- 2001-02-15 JP JP2001038220A patent/JP3628971B2/ja not_active Expired - Fee Related
- 2001-06-13 US US09/879,082 patent/US6603194B2/en not_active Expired - Lifetime
- 2001-06-19 DE DE60136525T patent/DE60136525D1/de not_active Expired - Lifetime
- 2001-06-19 EP EP01114674A patent/EP1239517B1/en not_active Expired - Lifetime
- 2001-09-21 CN CNB011418672A patent/CN1219321C/zh not_active Expired - Fee Related
- 2001-09-21 CN CNB2005101037447A patent/CN100459113C/zh not_active Expired - Fee Related
- 2001-10-29 TW TW090126708A patent/TW541678B/zh not_active IP Right Cessation
- 2001-12-05 KR KR1020010076401A patent/KR100559653B1/ko active IP Right Grant
-
2003
- 2003-05-16 US US10/438,847 patent/US6835600B2/en not_active Expired - Lifetime
Cited By (6)
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CN101431062B (zh) * | 2007-09-20 | 2011-09-07 | 三星电子株式会社 | 智能卡用载带基板和智能卡用半导体模块 |
CN102449750A (zh) * | 2010-09-25 | 2012-05-09 | 华为技术有限公司 | 将芯片焊接至电子电路 |
US8822276B2 (en) | 2010-09-25 | 2014-09-02 | Huawei Technologies Co., Ltd. | Magnetic integration double-ended converter |
CN102593092A (zh) * | 2012-03-22 | 2012-07-18 | 天水华天微电子股份有限公司 | 一种引线框架 |
CN107710393A (zh) * | 2015-09-24 | 2018-02-16 | 东和株式会社 | 树脂密封装置和树脂密封方法、电子零件的制造方法、以及引线框架 |
CN107710393B (zh) * | 2015-09-24 | 2020-03-13 | 东和株式会社 | 树脂密封方法、电子零件的制造方法、以及引线框架 |
Also Published As
Publication number | Publication date |
---|---|
CN1767185A (zh) | 2006-05-03 |
EP1239517A3 (en) | 2004-09-22 |
CN1219321C (zh) | 2005-09-14 |
DE60136525D1 (de) | 2008-12-24 |
EP1239517A2 (en) | 2002-09-11 |
US20020109973A1 (en) | 2002-08-15 |
CN100459113C (zh) | 2009-02-04 |
EP1239517B1 (en) | 2008-11-12 |
KR100559653B1 (ko) | 2006-03-10 |
US20030203541A1 (en) | 2003-10-30 |
US6835600B2 (en) | 2004-12-28 |
JP2002246530A (ja) | 2002-08-30 |
JP3628971B2 (ja) | 2005-03-16 |
TW541678B (en) | 2003-07-11 |
US6603194B2 (en) | 2003-08-05 |
KR20020067414A (ko) | 2002-08-22 |
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