TW541678B - Lead frame and method for fabricating resin-encapsulated semiconductor device using the same - Google Patents
Lead frame and method for fabricating resin-encapsulated semiconductor device using the same Download PDFInfo
- Publication number
- TW541678B TW541678B TW090126708A TW90126708A TW541678B TW 541678 B TW541678 B TW 541678B TW 090126708 A TW090126708 A TW 090126708A TW 90126708 A TW90126708 A TW 90126708A TW 541678 B TW541678 B TW 541678B
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- Taiwan
- Prior art keywords
- section
- lead frame
- lead
- resin
- packaging
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims description 23
- 239000011347 resin Substances 0.000 claims abstract description 84
- 229920005989 resin Polymers 0.000 claims abstract description 84
- 238000005538 encapsulation Methods 0.000 claims abstract description 21
- 238000005520 cutting process Methods 0.000 claims description 105
- 235000012431 wafers Nutrition 0.000 claims description 89
- 238000004806 packaging method and process Methods 0.000 claims description 71
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 238000007789 sealing Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- HBGPNLPABVUVKZ-POTXQNELSA-N (1r,3as,4s,5ar,5br,7r,7ar,11ar,11br,13as,13br)-4,7-dihydroxy-3a,5a,5b,8,8,11a-hexamethyl-1-prop-1-en-2-yl-2,3,4,5,6,7,7a,10,11,11b,12,13,13a,13b-tetradecahydro-1h-cyclopenta[a]chrysen-9-one Chemical compound C([C@@]12C)CC(=O)C(C)(C)[C@@H]1[C@H](O)C[C@]([C@]1(C)C[C@@H]3O)(C)[C@@H]2CC[C@H]1[C@@H]1[C@]3(C)CC[C@H]1C(=C)C HBGPNLPABVUVKZ-POTXQNELSA-N 0.000 claims description 2
- PFRGGOIBYLYVKM-UHFFFAOYSA-N 15alpha-hydroxylup-20(29)-en-3-one Natural products CC(=C)C1CCC2(C)CC(O)C3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 PFRGGOIBYLYVKM-UHFFFAOYSA-N 0.000 claims description 2
- SOKRNBGSNZXYIO-UHFFFAOYSA-N Resinone Natural products CC(=C)C1CCC2(C)C(O)CC3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 SOKRNBGSNZXYIO-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
541678 A7 B7 五、發明説明( 發明背景 本發明係關於一種引線框,使引線框在封裝於一樹脂内 之後可曝露底表面,以及一種用以製造一樹脂封裝之半導 體裝置之方沐,甘& 乃/2: 其可使用此一引線框而將表面安裝於一基 板上。 近年來’對於半導體元件之高密度安裝有增大之需求, 以便取得較高功能性之較小電子裝置,據此,一樹脂封裝 之半導體裝置(即藉由_體成型地封裝一半導體晶片及引線 於一樹脂模具内而取得之裝置)之整體尺寸及厚度已快速減 小。再者’目前已發展出多種技術,以降低生產成本及增 加生產率。 用於製造一樹脂封裝之半導體裝置之一習知方法將參考 圖11以說明之。 圖11說明用於製造一樹脂封裝之半導體裝置之一習知方 法,較特別的是,圖u係一截面圖,說明將樹脂封裝之複 數半導體裝置彼此分離至一引線框上之一步驟。如圖丨丨所 不’一引線框1 0 1係供複數半導體裝置i 〇〇個別地在其上封 裝於一樹脂内,其固定於一細切片2〇〇上,隨後引線框1 〇 i 利用一切削刃20 1沿著一延伸於相鄰半導體裝置i 〇〇之間之 切削區而切削。切削刀2〇1切削後,一鑿紋(切削引線 框101後留存之一粗邊)會產生於引線框1〇1之端表面上。 發生於半導體裝置100底表面上之攀紋l〇la係不必要者, 若半導體裝置100為一表面安裝式裝置,即引線曝露於其底 表面上’則半導體裝置100與供其安裝於上之基板之間黏性 -4 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 541678
A7 B7 _ 、發明説明(2 ) 會因鑿紋101a而呈不足,致使其間之電力連接不良。 儘管一般係以金剛石粉末或類似物施加於切削刀2〇 1之切 削表面上,但是當切削刃20 1反覆用於切削金屬製成之引線 框101時,切削表面即易負荷有金屬粉末。一旦切削刃2 〇 1 負荷時’切削製程無法利用負荷之切削刃20 1持續進行,必 須以新的刀刃更換負荷之切削刀20 1,此一更換過程即降低 生產率。 發明概要 本發明用於解決先前技藝中之諸項問題,且具有一目的 以減少發生於一引線框之切削表面上之鑿紋,藉此增進一 树月曰封裝之半導體裝置之品質,同時延長一切削刃之壽命 ’因而增加生產率。 為了達成此目的,本發明提供一金屬引線框且具有切削 區供引線框沿此切削成複數半導體裝置,其中切削區係局 部凹入,以減少沿著切削區之金屬量。當製造一樹脂封裝 之半導體裝置時,引線框之各切削區之凹入部可填以封裝 樹脂。 特別是’本發明之一第一引線框包括:一外框段;複數 晶片安裝段,係由外框段支承且安裝複數半導體晶片於其 上;引線段,係圍繞晶片安裝段;連接段,供相互連接及 支承内引線段與外框段;及一封裝區,供晶片安裝段由一 封裝樹脂封裝於其内。一開孔提供於外框段之複數區域内 ,其位於封裝區外側且沿著其中一連接段之延伸部。 在第一引線框中,一開孔提供於外框段之複數區域内, 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 541678
A7 _____B7 ___ 、發明説明(3 ) 其位於封裝區外側且沿著其中一連接段之延伸部。因此, 當引線框係由一切削刃沿著連接段切削時,欲由切削刃切 削之引線框量即在封裝區外側之一部分外框段内減少。依 此’可以減少引線框之鑿紋發生及抑制切削刃之負荷,藉 此增進樹脂封裝之半導體裝置之品質,同時延長切削刃之 壽命,因而增加生產率。 在第一引線框中’較佳為開孔之一寬度係大於供沿著連 接段以切削引線框之切削裝置之一厚度。依此,切削裝置 不會接觸開孔内之引線框,藉此穩定地抑制引線框之鑿紋 發生及切削刃之負荷。 本發明之一第二引線框包括:一外框段;複數晶片安裝 段’係由外框段支承且安裝複數半導體晶片於其上;引線 段’係圍繞晶片安裝段;連接段,供相互連接及支承内引 線段與外框段;及一封裝區,供晶片安裝段由一封裝樹脂 封裝於其内’其中一凹入部係提供於外框段之複數區域内 ’其各位於封裝區外側,係在供封裝樹脂於此流動之一流 迢段之相反側上,且沿著其中一連接段之延伸部。 在第二引線框中,一凹入部係提供於外框段之複數區域 内,其各位於封裝區外側,係在供封裝樹脂於此流動之一 流迢段之相反側上,且沿著其中一連接段之延伸部。因此 ,當引線框係由一切削刃沿著連接段切削時,欲由切削刃 切削之引線框量即在封裝區外側之一部分外框段内減少。 依此’可以減少引線框之鑿紋發生及抑制切削刃之負荷。 此外,凹入部可填以一封裝樹脂,由於一封裝樹脂通常混 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 541678
口夕土(乳化硬)做為填料,故可利用混合於封裝樹脂内之石夕 土成分而提供自-負荷狀態中恢復切削刀等等之俗稱,,修飾 效果”。結果’馨紋之發生即減少,藉此增進樹脂封裝之半 導體裝置之品冑’同時延長切削刃之壽命,因而增加生產 率。 、在第二引線框中,較佳為凹入部之一寬度係大於供沿著 連接段以切削引線框之切削裝置之一厚度。依此,切削裝 置不會接觸開孔内之引線框,藉此穩定地抑制引線框之鑿 紋發生及切削刃之負荷。 在第一或第二引線框中,較佳為各連接段包括一薄化部 ,其厚度小於外框段之厚度。依此,封裝樹脂之厚度係在 連接奴之上方或下方增加,因此,當引線框係由切削刀沿 著連接段切削時,欲由切削刃切削之引線框量即減少,同 時欲由切削刃切削之封裝樹脂量增加,減少引線框之鑿紋 及增進切削刃上之修飾效果。 在第一或第二引線框中,較佳為另一開孔提供於封裝區 之一周邊部之複數區域内,其各沿著其中一連接段之一延 伸部而設。依此,由於其他開孔設於引線框之封裝區中, 故其他開孔即填以封裝樹脂,藉此進一步增進切削刀上之 修飾效果。 在第一或第二引線框中,較佳為各連接段之一寬度係小 於供沿著連接段以切削引線框之切削裝置之一厚度。依此 ’籌沿者連接段切削引線框成複數裝置時,切削裝置可以 完全切離連接段。此外,切削裝置相關於連接段之對準邊 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 541678 A7 B7 五、發明説明(5 ) 距增加。 在此一例子中,進一步較佳為各連接段係在接近於引線 段處截角,藉此減小接近於引線段處之連接段之一厚度。 此即進一步減少欲由切削刃切削之引線框量,同時增加欲 甴切削刃切削之封裝樹脂量,藉此減少引線框之鑿紋及增 進切削刃上之修飾效果。 導體晶片於引線框之 晶片安裝段上之一第二步驟;將各安
其中第四步驟包括一 本發明用以製造一樹脂封裝之半導體裝置之一第一方法 包括:提供一引線框之一第一步驟,引線框包括:一外框 段;複數晶片安裝段,係由外框段支承且安裝複數半導體 晶片於其上;引線段,係圍繞晶片安裝段;連接段,供相 互連接及支承内引線段與外框段;及一封裝區,供晶片安 裝段由一封裝樹脂封裝於其内,其中一開孔係提供於外框 段之複數區域内,其位於封裝區外側且沿著其中一連接段 之一延伸部,及各連接段包括一薄化部;分別安裝複數半
封裝樹脂。 樹脂封裝之半導體裝置之第 片包含於封裝樹脂内之一第五步驟, 封裝引線框及半導體晶片之步驟,使 之一凹穴係填注以 用以製造一 一方法使用本發 -8 - 541678 A? B7 五、發明説明( 明之第一引線框,其中各連接段包括一薄化部,且定義於 /專化部上方或下方之凹穴係填注以封裝樹脂。因此,封裝 樹脂之厚度即在連接段上方或下方增加,因此,欲由切削 刃切削之引線框量即減少,同時欲由切削刃切削之封裝樹 月曰置增加。結果’引線框之鑿紋減少且切削刃上之修飾效 果增加,藉此增進一樹脂封裝之半導體裝置之品質,同時 延長一切削刃之壽命,因而增加生產率。 本發明用以製造一樹脂封裝之半導體裝置之一第二方法 包括:提供一引線框之一第一步驟,引線框包括:一外框 段;複數晶片安裝段,係由外框段支承且安裝複數半導體 晶片於其上;引線段,係圍繞晶片安裝段;連接段,供相 互連接及支承内引線段與外框段;及一封裝區,供晶片安 裝段由一封裝樹脂封裝於其内,其中一凹入部係提供於外 框段之複數區域内,其各位於封裝區外側,係在供封裝樹 脂於此流動之一流道段之相反側上,且沿著其中一連接段 之延伸部,及各連接段包括一薄化部;分別安裝複數半導 體晶片於引線框之晶片安裝段上之一第二步驟;將各安裝 後之半導體晶片以電氣性連接於圍繞半導體晶片之引線段 之一第三步驟;將引線框及半導體晶片一體成型地封裝於 一封裝樹脂内之一第四步驟’·及利用一切削刀沿著連接段 切削封裝後之引線框,以利取得複數半導體裝置,且各具 有至少一半導體晶片包含於封裝樹脂内之一第五步驟,其 中第四步驟包括一封裝引線框及半導體晶片之步驟,使得 定義於引線框之各薄化部上方或下方之一凹$係填注以封 -9 - 541678 A7 B7 五、發明説明( 裝樹脂。 用以製造-樹脂封裝之半導體裝置之第二方法使用本發 明之第二引線框,#中各連接段包括一薄化部,且定義於 薄化部上方或下方之凹穴係填注以封裝樹脂。結果,本發 明用以製造-樹脂封裝之半導體裝置之第二方法亦提供如 同本發明用以製造一樹脂封裝之半導體裝置之第一方法者 之效果。 本發明用以製造一樹脂封裝之半導體裝置之一第三方法 包括:提供-引線框之一第一步驟,引線框包括:一外框 段;複數晶m段,係由外框段支承且安裝複數半導體 晶片於其上;引線段,係、圍繞晶片安裝段;連接段,供相 互連接及支承内引線段與外框段;及一封裝區,供晶片安 裝段由一封裝樹脂封裝於其内,其中一凹入部係提供於外 框段之複數區域内,其各位於封裝區外側,係在供封裝樹 脂於此流動之一流道段之相反側上,且沿著其中一連接段 之延伸邛,刀別女裝複數半導體晶片於引線框之晶片安裝 段上之一第二步驟;將各安裝後之半導體晶片以電氣性連 接於圍繞半導體晶片之引線段之_第三步驟;將引線框及 半導體晶片一體成型地封裝於一封裝樹脂内之一第四步驟 ;及利用’削m連接段切肖彳封裝後之引線框,以利 取得複數半導體裝置,且各具有至少一半導體晶片包含於 封裝樹脂内之-第五步驟,其中第四步驟包括—封裝引線 c及半‘體a曰片之步驟,使得引線框之凹入部未填注以封 裝樹脂。 -10-
本紙張尺度適用中國國家標準(CNS) A4^¥(2T〇 X 297^^'T 裝 訂
541678 A7 B7 五、發明説明(8 用=製造-樹脂封裝之半導體裝置之第三方法使用本發 、、第引線框因此,欲由切削裝置切削之引線框量即 咸v、、、. I弓|線框之馨紋減少且切削裝置:麵荷減少, 藉此增進樹㈣裝之何體裝置之品質,㈣延長-切削 刃之壽命,因而增加生產率。再者,由於提供於流道段内 之凹入部並未填注封裝樹脂,凹入部可以做結構性簡化。 本發明用以製造-樹脂封裝之半導體裝置之—第四方法 包括:提供-引線框之一第一步·驟,引線框包括:一外框 段;複數晶片安裝段,係由外框段支承且安裝複數半導體 晶片於其上H線段,係圍繞晶片安裝段;連接段,供相 互連接及支承内引線段與外框段;及_封裝區,供晶片安 裝段由一封裝樹脂封裝於其内,其中一凹入部係提供於外 框段之複數區域内,其各位於封裝區外側,係在供封裝樹 脂於此流動之一流道段之相反側上,且沿著其 之延伸部;分別安裝複數半導體晶片於引線框之晶片安^ 段上之一第二步驟;將各安裝後之半導體晶片以電氣性連 接於圍繞半導體晶片之引線段之一第三步驟;將引線框及 半導體晶片一體成型地封裝於一封裝樹脂内之一第四步驟 ;及利用一切削刃沿著連接段切削封裝後之引線框,以利 取得複數半導體裝置,且各具有至少一半導體晶片包含於 封裝樹脂内之一第五步驟,其中第四步驟包括一封裝引線 框及半導體晶片之步驟,使得引線框之凹入部係填注以封 裝樹脂。 用 以製造一樹脂封裝之半導體裝置之第四方法使用本發 -11 - 本紙張尺度適用中國國家樣準(CNS) A4規格(210 X 297公釐) 541678 A7 B7 五、發明説明(9 明之第二引線框,其中引線框之凹入部 。因此,欲由切削裝置切削之引線框量^I、以封裝樹脂 切削裝置切削之封裝樹脂量增加。、结果同日"人由 少且切削刀上之修飾效果增加,藉此一始框之鑿紋減 導體裝置之品質,_長切削刀…:封裝之半 率。 · αρ,因而增加生產 圖式簡單說明 圖1係一圖表,說明本發明相關於_封裝樹脂厚度之一引 線框厚度比及切削製程中發生之一鑿紋高度間之關係。 圖2係一局部底視圖,簡示本發明實施例之一引線框。 圖3係一放大底視圖,說明圖2所示之一部分引線框。 圖4Α係沿圖3之線IV-IV而取之截面圖,說明封裝於一樹 脂内之後之一部分引線框。 圖4Β係沿圖3之線IV-IV而取之截面圖,說明本發明實施 例之一變換型式。 圖5 A、5Β係截面圖,依序說明本發明實施例中使用_引 線框以製造一樹脂封裝之半導體裝置之方法中之二步驟。 圖6係一局部底視圖,說明本發明實施例之引線框之一切 削區。 圖7係沿圖6之線VII-VII而取之截面圖,說明一凹入部。 圖8係沿圖6之線VIII-VIII而取之截面圖,說明一連接段 及一内引線段。 圖9係一局部底視圖,說明本發明實施例之一變換型式之 引線框之一切削區。 12- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 541678 A7 B7 五、發明説明(1(3 圖10係沿圖9之線χ.χ而取之載面圖,說明一連接段及— 内引線段。 圖丨1如局邛截面圖,說明製造一樹脂封裝之半導體裝 置之習知方法中之—半導體裝置分離步驟。 發明之詳細說明 本發明人已在-藉由切削裝置例如一切削刀(細切刀)切 削-單-引線框以取得樹脂封裝半導體裝置之方法上進行 多項研究,其上已封裝複數半導體裝置。較特別的是,本 叙明人已在如何抑制刀刃所生之馨紋及如何增進因刀刀負 荷而減低之生產率,結果,本發明人已取得以下發現。、 圖1說明相關於封裝樹脂厚度之引線框厚度比及馨紋值, 亦即切削製程產生之馨紋高度,之間之關係。在此,引線 樞係由一銅(CU)合金製成,切削刃具有(U毫米至0.9毫米厚 度及引線框之切削部寬度為〇」i毫求至〇·99毫米。切削條 件如下,切削刀之進刀速度大約為1〇毫米/秒至大約⑽毫 米/秒,其轉速大約為100〇〇 _至6_ —,冷卻與潤滑 水之流動率為大約0 7井/八$ Ο» A i ^ ’幵/刀至大約1.7升/分,及引線框之厚 度大約0.2毫米。 一如圖1所當切削不含封農樹脂之單獨引線框日夺,塞紋 南度係大到⑽微米,此為-半之引線框厚度。反之,當切 削含有一封裝樹脂之_ 3丨綠士 引線框日可,相關於封裝樹脂厚度之 引線框厚度比為亦即當裝樹脂之厚| μ㈣^ n arT ) ’馨紋兩度減小复 又夙】至60彳政未。當比率為^夺(亦即當裝樹脂 之厚度大致等於引線框者時)’ $紋高度即進一步減小至” -13- 541678 A7 B7 五、發明説明(13 ) 圖4B係沿圖3之線IV-IV而取之戴面圖,說明引線框1〇封 裝於一樹脂内之後之一凹入部17變換型式。如圖4β所示, 變換型式之凹入部1 7係形成使其可填注以封裝樹脂2〇a,依 此,欲由切削刀切削之引線框10量可以減少,同時增加欲 由切削刃切削之封裝樹脂量,藉此改善切削刃上之修飾效 果0 請注意圖4B所示之凹入部17需要一組件以將封裝樹脂部 20 A或流道封裝樹脂部21A連接於凹入部17,亦即其間用於 封裝樹脂20a之一通道,使其可填注以封裝樹脂2〇a。關於 此方面,圖4 A中具有未填注以樹脂之凹入部17之引線框工〇 係在結構上較圖4B所示者簡易。 一種使用一具有上述結構之引線框以製造一樹脂封裝之 半導體裝置之方法將參考圖5 A及圖5B說明於後。 第一步驟為提供如圖3所示之引線框1 〇,其中第一開孔i 6 係提供於封裝區20外側且沿著連接段14延伸部之外框段i 1 之一區域内’而凹入部17係提供於沿著連接段14延伸部之 流道段2 1相反側上之一區域内,且連接段14大致沿著其中 線薄化’以利定義一薄化部14a及一設於薄化部14a上方之 凹穴。 隨後,如圖5 Α所示,一半導體晶片31安裝於各晶片安裝 段12上,且安裝後之半導體晶片31利用薄金屬線32以連接 於圍繞半導體晶片3 1之内引線段13。隨後,内引線段1 3、 晶片安裝段12、半導體晶片31及薄金屬線32係一體成型地 封裝於一封裝樹脂内’使各内引線段丨3之底表面曝露,藉 -16 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
裴 η
線 541678 A7 B7 五、發明説明(14 ) 此衣成封裝樹脂部2〇A。請注意,引線框丨〇之底表面在此步 驟中係面朝上。 ^後’樹脂封裝之引線框1〇係固定於一細切片⑴乂片)22 上且封裝樹脂部20A之晶片安裝側係面向細;刀片22。請注 意,引線框10另可固定於細切片22上,而相對立於晶片安 裝側之另一側係面向細切片22。 酼後,如圖5B所示,固定於細切片22上之引線框1〇係在 上述切削條件下,利用一切削刀23沿著連接段14切削,以 利取得複數半導體裝置3〇,且各具有至少一半導體晶片31 包含於封裝樹脂部2〇a内。 切削步驟期間,由於定義於薄化部14a上方之凹穴係填注 以一封裝樹脂2〇b,切削刃23之負荷即得以抑制,且切削刃 2 0上之修飾效果得以改善。 依本實施例之引線框10之連接段14所示,連接段14之薄 4匕部14a及凹入部17現在將參考圖式詳細說明於後。 圖6說明封裝於一樹脂内之後之引線框丨〇底表面,特別是 ,圖6說明封裝區2〇,以及凹入部丨7提供於沿著連接段丨斗延 伸部之流道段21之一區域内。圖7係沿圖6之線VII-VII而取 之截回圖’說明凹入部17,及圖8係沿圖6之線VIII-VII]^ 取之截面圖,說明連接段14及内引線段π。 如圖6、7所示,凹入部17之寬度係設定為大於欲由切削 刀切削之一切削區23 A之寬度,依此,其可減少欲切削之引 線框10量,同時增加欲切削之封裝樹脂2心量,藉此抑制引 線框10切削表面上之鑿紋量且改善切削刃上之修飾效果。 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 541678 A7 B7 五、發明説明(15 ) 儘管諸圖中未示,但是第一開孔16之寬度及第二開孔1 8之 寬度亦設定為大於切削區23A之寬度。 再者,如圖6及圖8所示,連接段14之寬度係設定為小於 欲由切削刃切削之切削區23 A之寬度,可以確定當引線框i〇 係沿著連接段14切削時,切削刃可以完全切除連接段丨4, 亦可相關於連接段14而增加切削刃之對準邊距,藉此增進 生產率。 依本發明之一變換型式所示,連接段14係載角以提供 一斜切面14b於接近各内引線段1 3處,如圖9及圖丨〇所厂、 。提供斜切面14b之結果,欲填注入薄化部〗4 1 上万所定 義凹穴内之封裝樹脂20b量即增加,藉此減少欲切削之 線框1 0量,同時增加欲由切削刃切削之封裝樹脂旦 此可進一步減少引線框1 〇之鑿紋,且進_牛 步改善切削刃 上之修飾效果。 -18- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
Claims (1)
- 541678 8 8 8 8 A B c D 申请專利範圍 • 一種引線框,包含: 一外框段; 複數晶片安裝段,係由外框段支承且安裝複數丰導 晶片於其上; ' 引線段’係圍繞晶片安裝段; 連接段’供相互連接及支承内引線段與外框段;及 一封裝區,供晶片安裝段由一封裝樹脂封裝於其内, 其中一開孔係提供於外框段之複數區域内,其位於封 裝區外側且沿著其中一連接段之一延伸部。 2·如申請專利範圍第1項之引線框,其中開孔之一寬度係大 於供沿著連接段以切削引線框之切削裝置之一厚度。 3 ·如申請專利範圍第1項之引線框,其中各連接段包括一薄 化部’其厚度小於外框段之厚度。 4·如申請專利範圍第1項之引線框,其中另一開孔係提供於 封裝區之一周邊部之複數區域内,其各沿著其中一連接 段之一延伸部而設。 5.如申請專利範圍第1項之引線框,其中各連接段之一寬 度係小於供沿著連接段以切削引線框之切削裝置之一 厚度。 6 ·如申請專利範圍第5項之引線框,其_各連接段係在接近 於引線段處截角,藉此減小接近於引線段處之連接段之 一厚度。 7. —種引線框,包含: 一外框段; -19- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 5416788 8 8 8 A B c D 後數晶片安裝段,係由外框段支承且安裝複數半導體 晶片於其上; 引線段’係圍繞晶片安裝段; 連接段’供相互連接及支承内引線段與外框段;及 一封裝區’供晶片安裝段由一封裝樹脂封裝於其内, 其令一凹入部係提供於外框段之複數區域内,其各位 於封裝區外側,係在供封裝樹脂於此流動之一流道段之 相反側上,且沿著其中一連接段之延伸部。 8. 如申請專利範圍第7項之引線框,其中凹入部之一寬度係 大於供沿著連接段以切削引線框之切削裝置之一厚度。 9. 如申請專利範圍第7項之引線框,其中各連接段包括一薄 化部’其厚度小於外框段之厚度。 10. 如申請專利範圍第7項之引線框,其中另一開孔係提供於 封裝區之一周邊部之複數區域内,其各沿著其中一連接 段之一延伸部而設。 11 ·如申請專利範圍第7項之引線框,其中各連接段之一寬 度係小於供沿著連接段以切削引線框之切削裝置之一 厚度。 12_如申請專利範圍第1丨項之引線框,其中各連接段係在接 近於引線段處截角,藉此減小接近於引線段處之連接段 之一厚度。 13· —種用以製造一樹脂封裝之半導體裝置之方法,該方法 包含: 提供一引線框之一第一步驟,引線框包括··一外框段 -20- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) A B c D 541678 申請專利範圍 :複數晶片安裝段,係由外框段支承且安裝複數半導體 晶片於其上;引線段,係圍繞晶片安裝段;連接段,^ 相互連接及支承内引線段與外框段;及一封裝區,供曰 片安裝段由一封裝樹脂封裝於其内,其中—開孔係提Z 於外框段之複數區域内,其位於封裝區外側且沿著其中 一連接段之一延伸部,及各連接段包括一薄化部; 分別安裝複數半導體晶片於引線框之晶片安裝段上之 一第二步驟; 將各文裝後之半導體晶片以電氣性連接於圍繞半導體 晶片之引線段之一第三步驟; 將引線框及半導體晶片一體成型地封裝於一封裝樹脂 内之一第四步驟;及 利用一切削刃沿著連接段切削封裝後之引線框,以利 取得複數半導體裝置,且各具有至少一半導體晶片包含 於封裝樹脂内之一第五步驟, 其中第四步驟包括一封裝引線框及半導體晶片之步驟 ’使得定義於引線框之各薄化部上方或下方之一凹穴係 填注以封裝樹脂。 14· 一種用以製造一樹脂封裝之半導體裝置之方法,該方法 包含: 提供一引線框之一第一步驟,引線框包括:一外框段 ;複數晶片安裝段,係由外框段支承且安裝複數半導體 晶片於其上;引線段,係圍繞晶片安裝段;連接段,供 相互連接及支承内引線段與外框段;及一封裝區,供晶 -21 - 本紙張足度適用中國國家標準(CNS) A4規格(210X 297公董)541678 A8 B8 C8 D8六、申請專利範圍 片安裝段甴一封裝樹脂封裝於其内 ,其中一凹入部係提一第二步驟; / 晶片之引線段之一第三步驟; 將各女裝後之半導體晶片以電氣性連接於圍繞半導體 内之一第四步驟;及 將引線框及半導體晶片一體成型地封裝於一封裝樹脂 利用一切削刃沿著連接段切削封裝後之引線框,以利 取得複數半導體裝置,且各具有至少一半導體晶片包含 於封裝樹脂内之一第五步驟, 其中第四步驟包括一封裝引線框及半導體晶片之步驟 ’使得定義於引線框之各薄化部上方或下方之一凹穴係 填注以封裝樹脂。 15· —種用以製造一樹脂封裝之半導體裝置之方法,該方法 包含: 提供一引線框之一第一步驟,引線框包括:一外框段 ,複數晶片安裝段,係由外框段支承且安裝複數半導體 曰曰片於其上,引線段’係圍繞晶片安裝段;連接段,供 相互連接及支承内引線段與外框段;及_封裝區,供晶 片安裝段由一封裝樹脂封裝於其内,其中一凹入部係提 供於外框段之複數區域内’其各位於封裝區外側,係在 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 541678 A8 B8 C8 申請專利範圍 供封裝樹脂於此流動之一流道段之相反側上,且沿著其 中一連接段之延伸部; 刀別文裝複數半導體晶片於引線框之晶片安裝段上之 一第二步驟; 將各安裝後之半導體晶片以電氣性連接於圍繞半導體 晶片之引線段之一第三步驟; 裝 將引線框及半導體晶片一體成型地封裝於一封裝樹脂 内之一第四步驟;及 利用一切削刃沿著連接段切削封裝後之引線框,以利 取得複數半導體裝置,且各具有至少一半導體晶片包含 於封裝樹脂内之一第五步驟, 其中第四步驟包括一封裝引線框及半導體晶片之步驟 ’使得引線框之凹入部未填注以封裝樹脂。i6· 一種用以製造一樹脂封裝之半導體裝置之方法,該方法 包含: 提供一引線框之一第一步驟,引線框包括:一外框段 ;複數晶片安裝段,係由外框段支承且安裝複數半導體 晶片於其上;引線段,係圍繞晶片安裝段;連接段,供 相互連接及支承内引線段與外框段;及一封裝區,供晶 片安裝段由一封裝樹脂封裝於其内,其中一凹入部係提 供於外框段之複數區域内,其各位於封裝區外側,係在 供封裝樹脂於此流動之一流道段之相反側上,且沿著其 中一連接段之延伸部; 4別女裝複數半導體晶片於引線框之晶片安裝段上之 -23- ^紙張纽適财 § S 家料(CNS) A4祕(21GX 297公釐)"~ ---------- 54!678 A B c D 中請專利範圍 一第二步驟; 將各安裝後之半導體晶片以電氣性連接於圍繞半導體 晶片之引線段之一第三步驟; 將引線框及半導體晶片一體成型地封裝於一封裝樹脂 内之一第四步驟;及 利用一切削刃沿著連接段切削封裝後之引線框,以利 取得複數半導體裝置,且各具有至少一半導體晶片包含 於封裝樹脂内之一第五步驟, 其中第四步驟包括一封裝引線框及半導體晶片之步驟 ’使得引線框之凹入部係填注以封裝樹脂。 -24-
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JP4840893B2 (ja) | 2000-05-12 | 2011-12-21 | 大日本印刷株式会社 | 樹脂封止型半導体装置用フレーム |
JP3547704B2 (ja) | 2000-06-22 | 2004-07-28 | 株式会社三井ハイテック | リードフレーム及び半導体装置 |
US6400004B1 (en) * | 2000-08-17 | 2002-06-04 | Advanced Semiconductor Engineering, Inc. | Leadless semiconductor package |
JP4416067B2 (ja) | 2000-09-26 | 2010-02-17 | 大日本印刷株式会社 | 樹脂封止型半導体装置の製造方法 |
US6448107B1 (en) * | 2000-11-28 | 2002-09-10 | National Semiconductor Corporation | Pin indicator for leadless leadframe packages |
US6424024B1 (en) * | 2001-01-23 | 2002-07-23 | Siliconware Precision Industries Co., Ltd. | Leadframe of quad flat non-leaded package |
JP3628971B2 (ja) * | 2001-02-15 | 2005-03-16 | 松下電器産業株式会社 | リードフレーム及びそれを用いた樹脂封止型半導体装置の製造方法 |
-
2001
- 2001-02-15 JP JP2001038220A patent/JP3628971B2/ja not_active Expired - Fee Related
- 2001-06-13 US US09/879,082 patent/US6603194B2/en not_active Expired - Lifetime
- 2001-06-19 DE DE60136525T patent/DE60136525D1/de not_active Expired - Lifetime
- 2001-06-19 EP EP01114674A patent/EP1239517B1/en not_active Expired - Lifetime
- 2001-09-21 CN CNB011418672A patent/CN1219321C/zh not_active Expired - Fee Related
- 2001-09-21 CN CNB2005101037447A patent/CN100459113C/zh not_active Expired - Fee Related
- 2001-10-29 TW TW090126708A patent/TW541678B/zh not_active IP Right Cessation
- 2001-12-05 KR KR1020010076401A patent/KR100559653B1/ko active IP Right Grant
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2003
- 2003-05-16 US US10/438,847 patent/US6835600B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1767185A (zh) | 2006-05-03 |
EP1239517A3 (en) | 2004-09-22 |
CN1219321C (zh) | 2005-09-14 |
DE60136525D1 (de) | 2008-12-24 |
EP1239517A2 (en) | 2002-09-11 |
US20020109973A1 (en) | 2002-08-15 |
CN100459113C (zh) | 2009-02-04 |
EP1239517B1 (en) | 2008-11-12 |
CN1371127A (zh) | 2002-09-25 |
KR100559653B1 (ko) | 2006-03-10 |
US20030203541A1 (en) | 2003-10-30 |
US6835600B2 (en) | 2004-12-28 |
JP2002246530A (ja) | 2002-08-30 |
JP3628971B2 (ja) | 2005-03-16 |
US6603194B2 (en) | 2003-08-05 |
KR20020067414A (ko) | 2002-08-22 |
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