CN1949501A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN1949501A
CN1949501A CNA2006101361214A CN200610136121A CN1949501A CN 1949501 A CN1949501 A CN 1949501A CN A2006101361214 A CNA2006101361214 A CN A2006101361214A CN 200610136121 A CN200610136121 A CN 200610136121A CN 1949501 A CN1949501 A CN 1949501A
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resin
conductor
semiconductor device
resin substrate
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村井畅洋
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NEC Electronics Corp
NEC Corp
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Abstract

一种以简单的方案来防止树脂密封时的树脂基板的变形(开裂的产生)的半导体装置。为了提高加热·加压时的树脂基板的刚性，在半导体装置中，使由树脂密封的一侧的导体图形的面积占有率为树脂基板面的70％及以上。优选的是，导体图形间的间隔设为0.15mm及以下。

Description

半导体装置
技术领域
本发明涉及以树脂密封了半导体元件的半导体装置。
背景技术
现在，在手机通讯终端等设备中使用了在树脂基板上搭载半导体元件、无源元件等，以膜状的导体图形、金属细线构成电路径的半导体装置。在这样的半导体装置中，基板上的半导体元件等为了免受化学、物理作用而由树脂进行密封。
图7及图8表示以树脂封密封搭载了半导体元件的树脂基板面的半导体装置的概略图。图7是从搭载了半导体元件的树脂基板面侧看到的上面图，图8是图7的VIII-VIII剖视图。另外，在图7中，导体图形23上带有花样，且未明示密封树脂。在半导体装置21中，在树脂基板28的上下面上配置了导体图形23、26。把图8上侧的导体图形记作上部导体图形23，把其相反侧的导体图形记作下部导体图形26，上部导体图形23和下部导体图形26由覆盖贯通树脂基板28的通孔25的内面的层间导体层27电连接，半导体元件22由导电膏等粘接剂30粘接在上部导体图形23上，并且用金属细线24来与上部导体图形23电连接。处于上部导体图形23侧的半导体元件22等由密封树脂29覆盖。
作为这样的半导体装置的树脂密封方法，公知的有转移成型法、浇注法、网版印刷法等。例如，在采用转移成型法以树脂密封半导体装置的场合，使实施了半导体元件等电子部件的搭载、线搭接等的布线的基板面朝上，在加热到了约180℃的转移成型模具上载置树脂基板。此时，把以聚酰亚胺系等树脂为主要成分的带子(释放膜)(例如厚度约0.06mm)置于树脂基板和转移成型模具之间。从模具孔向搭载了半导体元件等的树脂基板面注入密封树脂，将密封树脂加压·固化，从而密封半导体元件等(例如参照专利文献1)。
配置在模具和树脂基板间的带子通过加热及加压，埋在模具和下部导体图形之间而变形。这样就能抑制加热及加压所引起的树脂基板的变形，防止半导体元件、树脂基板上的开裂的产生。
专利文献1：特开2001-127228号公报
发明内容
发明打算解决的课题
在半导体装置由树脂密封时，被树脂密封的(搭载了半导体元件的)一侧的树脂基板面会与在150℃及以上加热熔融了的密封树脂接触，再在密封树脂的形成时加压。此高热和压力会使树脂基板变形，使半导体元件及搭载了半导体元件的树脂基板面产生开裂。半导体元件、树脂基板的开裂会导致耐湿性降低等种种问题。
作为防止树脂基板、半导体元件的开裂的方案，可以采用先前说明了的带子(释放膜)，不过，在该场合，需要具有向树脂基板和模具之间供给带子的功能的树脂密封装置，因而设备成本及制造成本就会增加。
因而，为了防止半导体装置的树脂密封时的变形，期盼找到简单地使半导体装置自身的刚性提高的方案。
用于解决课题的方案
根据本发明的第1观点，提供一种在配置了导体图形的树脂基板的至少一面上搭载了半导体元件并且该至少一面由树脂密封，导体图形占该至少一面的表面积的70％及以上的半导体装置。
成为树脂基板的材料的例如环氧树脂在150℃及以上弯曲弹性率会大大降低，在作为转移成形的加热温度的180℃，弯曲弹性率为25℃时的2分之1及以下。还有，环氧树脂的巴科尔硬度，与弹性率一样，在100～150℃开始降低，180℃时的硬度为25℃时的2分之1及以下。另一方面，对于构成树脂基板上形成的导体图形的金、镍、铜等金属，弹性及硬度在25℃时和180℃时几乎不变化。因此，在本发明中，提供一种为了防止树脂密封时的加热及加压所引起的树脂基板的变形，以导体图形(金属)覆盖被树脂密封的一侧的树脂基板面的更大的范围，从而提高加热及加压时的刚性的半导体装置。
根据上述第1观点的优选方式，导体图形包含不与其他导体电连接的假导体图形。根据另外的优选方式，在该至少一面上，用于取得导体图形间的电绝缘的间隔为0.15mm及以下。根据另外的优选方式，导体图形的厚度至少为10μm。根据另外的优选方式，导体图形具有由多个种类的导体构成的多层构造。根据另外的优选方式，树脂密封所使用的树脂为环氧系树脂、聚酯系树脂或石炭酸系树脂。
发明效果
根据本发明，在树脂基板和密封树脂的接触部分的导体(金属)的比例的范围大，因而能对树脂基板给予高刚性。因此，即使在树脂密封时与例如约180℃的密封树脂接触，树脂基板也不易变形。并且，树脂基板的露出面积小(导体图形间的间隔窄)，因而从密封树脂施加于软化了的树脂基板的封入压力起作用的面积小，包含导体图形的树脂基板整体的变形被抑制。还有，即使在150℃及以下的低温进行树脂密封的场合，也能抑制由于密封树脂形成时和冷却时的密封树脂和树脂基板之间的热应力差而产生的树脂基板的弯曲。这样就能防止树脂基板及半导体元件的开裂的产生。
再有，根据本发明，能通过半导体装置自身的构造来防止树脂基板的变形，因而不用在树脂密封时在模具和半导体装置之间配置防止变形的带子。结果就能省略供给带子的工序及装置，因而能削减制造成本及设备成本。还有，在本发明中，只要按照设计来变更通过蚀刻或镀敷而形成的导体图形的图形形状即可，因而能非常简单地防止树脂基板的变形。此外，能抑制半导体装置的变形，从而也提高了半导体装置的实装性。
附图说明
图1是本发明的第1实施方式所涉及的半导体装置的上面图。
图2是图1的II-II线的剖视图。
图3是本发明的第2实施方式所涉及的半导体装置的上面图。
图4是图3的IV-IV线的剖视图。
图5是在实施例中制作的半导体装置的上面图。
图6是表示实施例中的开裂的产生数的坐标图。
图7是用于说明背景技术的半导体装置的上面图。
图8是图7的VIII-VIII线的剖视图。
标号说明
1   半导体装置
2   半导体元件
3   上部导体图形
3a  假导体图形
4   金属细线(bonding wire)
5   通孔
6   下部导体图形
7   层间导体
8   树脂基板
9   密封树脂
10  粘接剂
21  半导体装置
22  半导体元件
23  上部导体图形
24  金属细线(bonding wire)
25  通孔
26  下部导体图形
27  层间导体
28  树脂基板
29  密封树脂
30  粘接剂
具体实施方式
图1表示本发明所涉及的第1实施方式的半导体装置的上面图，图2表示II-II线的剖视图。在图1中，上部导体图形3带有花样，且未图示密封树脂9。半导体装置1具有树脂基板8、上部导体图形3、半导体元件2、金属细线(搭接线)4、下部导体图形6、通孔5和密封树脂9。上部导体图形3及下部导体图形6在树脂基板8的上面及下面上通过镀敷或蚀刻而形成。在这里，把在树脂基板8的密封树脂9侧形成的导体图形记作上部导体图形3，把在其相反侧形成的导体图形记作下部导体图形6。上部导体图形3和下部导体图形6通过贯通树脂基板8的通孔5的内面所形成的层间导体7而电连接。半导体元件2由含有或不含银等金属粉的粘接剂10粘接在上部导体图形3上。并且，与半导体元件2有别的上部导体图形3通过由金等构成的金属细线(搭接线)4而电连接。树脂基板8的上部侧即上部导体图形3、半导体元件2及金属细线4由环氧系等密封树脂9进行密封。
上部导体图形3，为了防止树脂密封时的树脂基板8的变形，尽可能使得树脂基板8从上部导体图形3露出的区域减少而配置在密封树脂侧的树脂基板8的面上。即，减少用于在上部导体图形间确保绝缘性的区域而形成上部导体图形3的图形形状。优选的是，上部导体图形3把树脂基板8的面至少覆盖50％，更优选的是50％～70％，再优选的是70％及以上。
还有，为了减少树脂基板8的露出面，上部导体图形3间的间隔d优选的是0.15mm及以下，更优选的是0.1mm及以下。上部导体图形3的厚度越厚，半导体装置自身的刚性越高，因而优选的是至少为10μm，更优选的是30μm及以上。
作为扩大上部导体图形3的占有面积的方案，可以扩大作为电路径来使用的导体图形的面积，或者也可以设置不与其他导体或电子部件电连接的假导体图形3a。例如，如图1所示的半导体装置1那样，可以在树脂基板8的角部、搭载了半导体元件1的上部导体图形3的周围，确保与其他导体或部件保持绝缘性的区域而形成假导体图形3a。假导体图形3a可以是与作为电路径来使用的导体图形同样的材质，因为不作为电路径来使用，所以也可以使用廉价或硬质的金属等。
再有，对于下部导体图形6，通过增加占有率和/或加厚厚度等，以与上部导体图形3同样的方式，辅助性地提高半导体装置1的刚性。
上部导体图形3及下部导体图形6的材质，只要是金属都可以，不用说，优选的是导电性出色的金属，可以是单体也可以是合金。特别优选的是，导体图形3、6由铜、金、银或镍形成，还可以是具有镀层等的多层构造。例如可以使用从上层按顺序分别积层厚度为1μm、5μm、30μm的金、镍、铜而成的导体图形3、6。
树脂基板8的材料可以适当选择，可以使用环氧系树脂、聚亚酰胺系树脂等。还有，作为密封树脂9的材料，可以使用环氧系树脂、聚酯系树脂、石炭酸系树脂、硅酮系树脂等。
图3表示本发明的第2实施方式所涉及的半导体装置的上面图，图4表示IV-IV线的剖视图。在图3中，导体图形3带有花样，且未图示密封树脂9。在第1实施方式所涉及的半导体装置1中通孔5贯通树脂基板8而形成，而在本发明的第2实施方式所涉及的半导体装置1中通孔5露出内面而在树脂基板8的侧面形成。根据第2实施方式，能观察侧面的焊料濡湿形状。上部导体图形3的方式是与第1实施方式同样的构成。
实施例
制作导体图形间的间隔d分为0.075mm、0.10mm、0.15mm、0.20mm、0.25mm、0.30mm、0.35mm及0.375mm的图5所示的半导体装置1，调查了各半导体装置1中的树脂密封时的开裂等的产生状况。在厚度110μm的玻璃环氧的树脂基板8上形成由铜、镍及金构成的导体图形3、6，在上部导体图形3上使用含有银粉的粘接剂10搭载了半导体元件2。导体图形3、6的下层为厚度23μm的铜，上层由厚度共计7μm的镍和金构成。上部导体图形3和半导体元件2由金属细线4电连接，上部导体图形3和下部导体图形6通过通孔5而电连接。还有，在树脂基板8的角部，形成了不与半导体元件2等电连接而只是覆盖树脂基板8上面的假导体图形3a。最后，用环氧树脂密封搭载了半导体元件2的面一侧。树脂密封采用转移成形法，不使用带子，在温度175℃，压力约9.8×106Pa(约100kgf/cm2)，密封保持时间约2分钟的条件下进行。
图6表示在树脂密封时半导体元件2上产生的平均开裂数(1个半导体装置平均)和上部导体图形3的间隔d的关系的坐标图。开裂从半导体元件2的上面向下面产生。根据图6，上部导体图形3间的间隔超过0.2mm(上部导体图形3的占有率不到约50％)的话，开裂数就会增加，而导体图形间的间隔d在1.5mm及以下(上部导体图形3的占有率约70％及以上)的范围未发现开裂的产生。由此表明，导体图形的间隔(导体图形的占有率)对树脂密封时的开裂的产生会带来大的影响，通过导体图形的间隔(导体图形的占有率)的调整，即使不使用带子也能防止开裂的产生。

Claims (7)

1.一种半导体装置，在配置了导体图形的树脂基板的至少一面上搭载了半导体元件并且所述至少一面由树脂密封，其特征在于，
所述导体图形占所述至少一面的表面积的70％及以上。
2.根据权利要求1所述的半导体装置，其特征在于，所述导体图形包含不与其他导体电连接的假导体图形。
3.根据权利要求1或2所述的半导体装置，其特征在于，在所述至少一面上，用于取得所述导体图形间的电绝缘的间隔为0.15mm及以下。
4.根据权利要求1或2所述的半导体装置，其特征在于，所述导体图形的厚度至少为10μm。
5.根据权利要求1或2所述的半导体装置，其特征在于，所述导体图形具有由多个种类的导体构成的多层构造。
6.根据权利要求1或2所述的半导体装置，其特征在于，树脂密封所使用的树脂为环氧系树脂、聚酯系树脂或石炭酸系树脂。
7.根据权利要求1或2所述的半导体装置，其特征在于，在该至少一面上，邻接的所述导体图形间的电绝缘的间隔调整为在以树脂密封而不夹杂带子进行密封时不产生开裂。
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