CN1063579C - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN1063579C
CN1063579C CN95190765A CN95190765A CN1063579C CN 1063579 C CN1063579 C CN 1063579C CN 95190765 A CN95190765 A CN 95190765A CN 95190765 A CN95190765 A CN 95190765A CN 1063579 C CN1063579 C CN 1063579C
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mentioned
chip
semiconductor device
bonding
tube core
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CN95190765A
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CN1132003A (zh
Inventor
石田芳弘
大森义信
池田家信
寺嶋一彦
丰田刚士
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Citizen Watch Co Ltd
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Citizen Watch Co Ltd
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

在将IC芯片(8)安装于电路基板(7)上，且用密封树脂(11)封装的半导体吉，在电路基板(7)与IC芯片(8)的角部A对应的位置上形成角部保护膜(6a、6b、6c、6d)，再用管芯粘结剂(9)将IC芯片(8)的角部A粘结于角部的保护膜上。另外，使管芯图形(3a)在上述角部保护膜的外侧露出，再形成包围其四周的电源图形(3b)，用键合引线(10)将IC芯片(8)的电源端子与这些管芯图形(3a)和电源图形(3b)连接起来。从而，提高了IC芯片角部的粘合力，以防止剥离，同时可自由进行多根用于供给电源的键合引线的键合。

Description

半导体装置
本发明涉及一种半导体装置。该装置能够提高IC芯片角部粘合力，即使热变形集中于角部也不会使IC角部剥离，同时，对应于IC芯片的电源端子的位置，不需延长管芯图形，就可以自由地连接IC芯片的端子与管芯图形。本发明可用于各种电子设备。
近年来，随IC芯片的高密度装载技术的发展，已开发出有许多电极的树脂密封型半导体装置。作为其代表，有PGA(管脚网阵)。PGA是把IC芯片装载在电路基板的一个表面上，再用树脂密封，而另一面上则做成配置多个连接IC芯片的管脚的结构。
不过，这种PGA虽然对母板具有可以拆装的优点，由于管脚的存在使体积变大，就有难以小型化的问题。
因此，正在开发BGA(球状网阵)，作为代替这种PGA的小型树脂密封型半导体装置。下面根据第7图说明一般的BGA结构。
第7图是表示现有的BGA剖面图。
以下述方式制造该BGA。在由大体四角形，板厚约0.2mm的玻璃环氧树脂等制成的上、下两面贴上厚度约18μm铜箔的树脂基板1上，采用切削钻头等工具，钻出多个通孔2。接着，将包括上述通孔2侧壁的基板表面洗净后，在上述树脂基板1的整个表面上，通过无电解电镀和电解电镀形成铜镀层。这时，铜镀层也镀到上述通孔2内。
接着，在镀层上覆盖镀层保护膜，进行曝光显影形成图形掩模后，使用通常电路基板腐蚀液CuCl2+H2O2刻蚀图形。
在上述树脂基板1的上侧面上形成IC芯片的管芯图形3和引线键合用的连接电极4，而在下侧面上则形成焊料凸点的焊盘电极5。还有，上述的连接电极4和焊盘电极5，通过上述通孔2而连接。
接着，给上述树脂基板1的上、下两面已露出电极的铜镀层表面镀上约2～5μm的Ni镀层。而且，Ni镀层上还镀上与键合引线连接性能优良的约0.5μm厚的金镀层31。
接着，对预定部分进行焊料保护膜处理，通过形成保护膜6，在上述树脂基板1的下侧面上形成矩阵状的许多形状一样的、其表面可以粘附焊料的保护膜开口部分。由此，完成电路基板7的制造。
接着，用粘结剂(管芯粘结材料)9，将IC芯片8直接固定于电路基板7上的管芯图形3的上述金镀层31上。而且，用键合引线10使该IC芯片8的电源端及I/O端与上述连接电极4进行连接。此后，采用热硬化性密封树脂11通过转移模压法对IC芯片8和键合引线10进行树脂密封，由此实现对上述IC芯片8的遮光与保护。
并且，向上述树脂基板1的下侧面所形成的上述焊盘电极5提供焊料球，径加热炉加热，形成焊料凸点12。经过该焊料凸点12而与图中未示出的母板基板的图形导通。由上所述，就完成了BGA13。
但是，在上述的半导体装置中在下述方面尚有改进的余地。就是说，在上述BGA13中，构成BGA13的树脂基板1中所使用的玻璃环氧树脂、转移模压的密封树脂11中所用的热硬化性树脂及构成安装IC芯片8的管芯图形3的铜图形，各自线膨胀系数如下：对于树脂基板1的玻璃环氧树脂而言为14ppm/℃、对于密封树脂11的热硬化性树脂而言为16ppm/℃、而对于构成管芯图形3的铜图形而言为17ppm/℃，三者热收缩率不同。因此，如第7图所示的BGA13有朝IC芯片8侧弯曲的趋势。
第8图是第7图各部分剖面的应力分布图。根据第8图，可以理解热变形应力由于集中于固定在树脂基板1上的IC芯片8的角部A，因此应力在IC芯片8的角部A成为峰值点，随着到中央部分B和树脂基板1的外周部分C该应力被逐渐分散。因此，由于集中于角部A的热变形之故，在芯片8的外围周边部分附近就会发生剥离。
在这里，各部分材料是的粘合力在粘合对象物之间是不同的，如第9图所示，就管芯粘结剂与金镀层的情况来说，粘合力就特别低。亦即，如第7图的BGA13那样，在将金镀层31镀于管芯图形3之上的情形下，与该部分的管芯粘结剂的粘合力最低。并且，就BGA13封装尺寸的大小而言，随IC芯片8的尺寸变大这种趋势变得更大。
由于这些原因，第7图的BGA中，IC芯片8的外围周边部分附近容易发生剥离。且如IC芯片8被剥离而产生移动，就会发生键合引线10的断裂。
还有，美国专利5077633中提出一种通过管芯粘结剂将IC芯片安装在聚酰亚胺薄膜等绝缘材料(保护膜)上的半导体装置。倘采用这种半导体装置，如第9图所示，则绝缘材料(保护膜)与管芯粘结剂的粘合力就要比金镀层与管芯粘结剂的粘合力高，因此可以认为对防止IC芯片剥离有益。
但是，在美国专利5077633号的半导体装置中，却没有示出关于向芯片供给电源问题的解决手段。亦即，在半导体装置中，为了适应高集成化、高速化而稳定地供给电源，需要许多条用于供给电源的键合引线，然而美国专利5077633号并没有公开用于供给电源的多条键合引线连接的方式。
另一方面，日本专利特开昭60-20524号提出一种在IC芯片的安装部分与引线导体膜配置部分之间，采取包围IC芯片的方式布置电源导体膜，再用键合引线在IC芯片上多个电源端与其电源导体膜之间连接的半导体装置。根据这种半导体装置，由于可将多根键合引线自由地连接于电源导体膜和IC芯片间，就使稳定地供给电源成为可能。
但是，特开昭60-20524号专利的半导体装置丝毫没有公开有关上述防止IC芯片剥离的技术。
近年来，在同时要求高可靠性和高密度集成化的半导体装置中，上述的防止IC芯片剥离和用于供给电源的键合线的自由连接这二点正成为必须同时满足的绝对条件。然而，如上所述，现有技术只能满足其中一个条件，不存在同时满足两个条件的半导体装置。
所以，本发明的目的是提供不会剥离IC芯片的并实现能自由地进行用于供给电源的键合引线的连接地，可靠性高的并且可实现高密度集成的半导体装置。
本发明的半导体装置，包括：具有用于安置IC芯片在树脂基板上形成的管芯图形和用于用于连接所述IC芯片各电极在树脂基板上形成的连接电极的电路基板；和由树脂封装安置在该电路基板上的IC芯片；所述管芯图形其外形大于所述IC芯片的外形，还包括，有机绝缘性膜，覆盖在所述管芯图形上，其外形小于所述管芯图形，并且覆盖到相对于所述IC芯片角部分的电路基板上，在其上管芯键合焊接，所述IC芯片的电源键合引线，与从所述管芯图形的所述有机绝缘性膜露出的部分连接。
因此，即使因构成半导体装置的树脂基板、密封树脂、及安装IC芯片的管芯图形的各自的线热膨胀系数不同而使热变形向IC芯片的角部集中，但由于角部绝缘性被膜与管芯粘结剂的粘合力很高，故IC芯片的角部就不会被剥离，从而使半导体装置的可靠性显著提高。另外，由于不必使管图形的一部分向外侧伸出而与IC芯片的电源端的位置重合，所以可以自由进行管芯图形与电源端间的键合引线的连接，故能够很容易适应IC芯片的高密度集成化和大型化。
更具体说，本申请发明的上述管芯图形包括：形成在安装上述IC芯片位置中央部分附近的主图形、形成于安装上述IC芯片位置外侧的键合图形以及连接上述主图形和键合图形的辐射状配置的结合图形，再将上述绝缘性膜覆盖于上述键合图形的内侧。
假如制成这样的结构的话，可避免在热变形最集中的角部形成图形，可进一步提高可靠性。
第1图是表示本发明的第1实施例的BGA封装平面图。
第2图是表示本发明的第1实施例的第1图的主要部分的剖面图。
第3图是表示本发明半导体装置的第3实施例的平面图。
第4图是表示本发明半导体装置的第3实施例的平面图。
第5图是表示本发明半导体装置的第3实施例的对应于第4图的B-B线剖面的主要部分剖面图。
第6图是表示本发明半导体装置的第4实施例的平面图。
第7图是表示现有技术的BGA剖面图。
第8图是第7图各个剖面的应力分布图。
第9图是表示材料与粘合力的关系表。
根据附图详细说明本发明。
第1图和第2图是本发明的第1实施例。第1图是BGA封装的平面图，第2图则是第1图的主要部分的剖面图。图中，凡与现有技术相同的部件用相同的符号表示。
本第1实施例的半导体装置与上述第7图所示的现有技术一样，树脂基板1的两面都层叠薄铜箔，开孔加工通孔2后，经无电解电镀铜和电解电镀铜，形成铜镀层于两面贴上铜的树脂基板1的整个表面上。
接着，进行在镀层上覆盖镀层保护膜，曝光显影形成图形掩模后，以腐蚀液进行图形腐蚀，在上侧面形成IC芯片的管芯图形3、3a、电源图形3b及引线图形4，下侧面上则形成焊料凸点的焊盘电极5。此处，管芯图形3、3a的外形比IC芯片8的外形要大。
另外，在树脂基板上面的上述管芯图形3、3a(Vdd)、电源图形3b(Vss)及引线图形4则经过通孔2与其下面的焊盘电极5连接。
接着，在管芯图形3、3a上的至少对应于IC芯片8的角部A的角部以及其它预定部分上都形成绝缘性膜。显影型液状焊料保护膜、热硬化型焊料保护膜(聚酰亚胺条/环氧树脂系)、或者附有粘结剂的聚酰亚胺带虽然都可用作为绝缘性膜，本实施例中则经过焊料保护膜处理，形成显影型液状焊料保护膜。
这样一来，就是将保护膜6覆盖在与IC芯片8的角部A相应的6a、6b、6c、6d和其它预定部分以上。这时，角部保护膜6a、6b、6c、6d的外形比上述管芯图形3、3a的外形要小，使管芯粘结图形3、3a露出于角部保护膜6a、6b、6c、6d的边缘部分。
而且，在树脂基板1的下侧面上，形成矩阵状、多个形状相同、表面能粘附焊料的保护膜6的开口部分。由此，完成了电路基板7。
还有，该电路基板7上，给没有覆盖保护膜6、6a、6b、6c、6d的管芯图形部分、电源图形及引线图形镀上金镀层31。
接着，将IC芯片8安装在上述电路基板7的上侧面。这时，将IC芯片8的角部用管芯粘结剂9粘在覆盖于管芯图形3角部A上的角部保护膜6a、6b、6c、6d上。而且IC芯片8的中央部分也同时通过粘结剂9直接粘合于管芯图形3上。
接着，分别用键合引线10对IC芯片8的电源端子与在上述角部保护膜6a、6b、6c、6d的外侧边缘露出的管芯图形3a以及包围在管芯图形3a的外面且隔开一定间隔而形成的电源图形3b进行引线键合。同样，用键合引线10对电路基板7的外侧周边部分形成的引线图形4与IC芯片8的I/O端子进行引线键合。
然后，用热硬化性密封树脂11通过转移模压法进行树脂封装，IC芯片的遮光与保护。
再者，经加热炉加热，将焊料球提供到电路基板7的下侧面上的多个能粘附焊料的焊盘电极5上。因此，形成焊料凸点12，通过所形成的焊料凸点12便可与图未示出的母板基板上的图形连通。
由以上技术，就完成了BGA13。
根据这种结构构成半导体装置的话，IC芯片8的角部A由于用管芯粘结剂9粘结在角部的保护膜6a、6b、6c、6d上，如第9图所示出的，若与用管芯粘结剂粘结于现有金镀层上的情况相比较，其粘合力显然高多了。
因此，即使因树脂基板1与用于在该树脂基板1形成管芯图形3的铜图形以及用树脂密封上述IC芯片8的密封树脂11的热收缩率不同而引起的热变形集中于IC芯片8的角部A，也不会引使IC芯片8的角部A的剥离。还有，由于将角部保护膜6a、6b、6c、6d的周边内侧的形状制成弯曲形状，使管芯粘结剂9流动变得均匀，还能防止发生气泡。
而且，将管芯图形3、3a做成比IC芯片8的外形要大些的外形，角部保护膜6a、6b、6c、6d的外形虽比IC芯片的外形大，但却比管芯图形3a的外形要小。因此，用多根键合电引线线10将露出在角部保护膜6a、6b、6c、6d的外围的管芯图形3a及电源图形3b与IC芯片8的电源端连接起来时，对应于IC芯片8的电源端子的位置，即使不延长管芯图形3a和电源图形3b而引出，对于管芯图形3a和电源图形3b来说也能自由地连接电源端子。
第3图是表示本发明的半导体装置的第2实施例的平面图。
本半导体装置中将上述第一实施例中各自独立形成的角部保护膜6a、6b、6c、6d进行一体化处理使之形成环状保护膜6e来代替上述角部保护膜6a、6b、6c、6d。按照这种结构的半导体装置，也能起到与上述第1实施例的半导体装置同样的作用与效果。
第4和第5图是用于本发明半导体装置的第3实施例。第4图是平面图，第5图则是对应于第4图B-B剖面线的主要部分剖面图。本半导体装置是以主图形3和键合图形3a、及将之图形3和键合图形3a连接起来的结合图形3d，来形成管芯图形。
此处，主图形3的外形要制作成比IC芯片8的外形小，键合图形3a则形成于IC芯片8安装位置的外侧四周。而且，该立图形3和键合图形的通过结合图形3d而电连接。该结合图形3d虽然呈放射状从主图形3伸出而形成许多条，但应避免制作在上述热变形集中的IC芯片8的角部A的位置上。
另外，上述管芯图形3a的外围，每隔一定间隔，以包围其四周的方式，设置电源图形3b。
以与第1实施例大体相同的形式，将保护膜覆盖于主图形3的大体中央部分与对应于IC芯片8的各个角部A的部分。亦即，对各个角部来说角部保护膜6a、6b、6c、6d是各自独立地覆盖的，保护膜6则是覆盖于主图形3的中央部分上。因此，作为整体，主图形3的一部分成为露出表面的状态，而形成了结合图形3d的区域则变成被保护膜6a、6b、6c、6d覆盖的状态。
还有，在本半导体装置中也用键合引线10对IC芯片8的电源端与上述管芯图形3a和电源图形3b电连接。
根据这样的结构构成的半导体装置，使用粘合力比较高的保护膜和管芯粘结剂进行热变形集中的IC芯片8的角部A的粘合，同时因在角部A处没有结合图形3d，使起因于热收缩率不同造成的热变形的发生得到缓和。因此，可靠地防止IC芯片8的角部A的剥离，进一步提高了半导体装置的可靠性。
另外，除IC芯片8的角部A以外的周边部分，由于通过粘结剂9直接粘合于电路基板1上，粘合力非常高，进一步提高了可靠性。
而且，对用多根导电键合引线10连接IC芯片8的电源端的情况下，对应于IC芯片8的电源端子的位置，即使不延长管芯图形3a和电源图形3b而引出，对于管芯图形3a和电源图形3b也能自由地连接电源端。
第6图是表示本发明半导体装置的第4实施例的平面图。
本半导体装置中将上述第三实施例中各自独立形成的角部保护膜6a、6b、6c、6d进行一体化处理使之形成环状保护膜61来代替上述角部保护膜6a、6b、6c及6d。按照这种结构的半导体装置，也能起到与上述第3实施例的半导体装置同样的作用与效果。
此外，上述说明虽然是针对BGA半导体装置进行的，不言而喻，本发明也适用于半导体装置，例如管脚网阵(PGA)半导体装置。
由以上这样的结构构成的本发明的半导体装置可装于各种电子设备的内部进行使用。

Claims (9)

1．一种半导体装置，包括：具有用于安置IC芯片在树脂基板上形成的管芯图形和用于连接所述IC芯片各电极在树脂基板上形成的连接电极的电路基板；和
由树脂封装安置在该电路基板上的IC芯片；
其特征在于
所述管芯图形其外形大于所述IC芯片的外形，
还包括，有机绝缘性膜，覆盖所述管芯图形上，其外形小于所述管芯图形，并且覆盖到相对于所述IC芯片角部分的电路基板上，在其上管芯键合焊接，
所述IC芯片的电源键合引线，与从所述管芯图形的所述有机绝缘性膜露出的部分连接。
2．根据权利要求1的半导体装置，其特征在于，上述管芯图形具有：形成于安装上述IC芯片的位置的中央部分附近的主图形、形成于安装上述IC芯片位置的外侧的键合图形及电连接上述主图形和键合图形的结合图形；上述有机绝缘性膜覆盖于上述键合图形的内侧。
3．根据权利要求2的半导体装置，其特征在于，上述键合图形配置于包围上述主图形的四周，上述结合图形是从上述主图形到键合图形呈辐射状配置。
4．根据权利要求3的半导体装置，其特征在于，上述结合图形配置于上述IC芯片的角部以外的部分。
5．根据权利要求2的半导体装置，其特征在于，覆盖的上述有机绝缘性膜使上述主图形露出一部分。
6．根据权利要求3的半导体装置，其特征在于，形成的上述有机绝缘性膜呈大致覆盖上述结合图形的形成区域的圆周状。
7．根据权利要求3的半导体装置，其特征在于，形成的上述有机绝缘性膜覆盖对应于上述结合图形的形成区域的上述IC芯片的角部的部分。
8．根据权利要求2的半导体装置，其特征在于，上述有机绝缘性膜是镀制成的保护膜，在没有用该镀制保护膜覆盖的电极图形上镀有金镀膜。
9．根据权利要求8的半导体装置，其特征在于，上述镀制的保护膜是显影型液状焊料保护膜。
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