JP4359257B2 - Bgaパッケージおよびその製造方法 - Google Patents
Bgaパッケージおよびその製造方法 Download PDFInfo
- Publication number
- JP4359257B2 JP4359257B2 JP2005103428A JP2005103428A JP4359257B2 JP 4359257 B2 JP4359257 B2 JP 4359257B2 JP 2005103428 A JP2005103428 A JP 2005103428A JP 2005103428 A JP2005103428 A JP 2005103428A JP 4359257 B2 JP4359257 B2 JP 4359257B2
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- Prior art keywords
- bonding pad
- bga package
- package substrate
- manufacturing
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- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 52
- 229910000679 solder Inorganic materials 0.000 claims description 97
- 238000000034 method Methods 0.000 claims description 84
- 239000010410 layer Substances 0.000 claims description 68
- 230000008569 process Effects 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 62
- 238000007747 plating Methods 0.000 claims description 54
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 37
- 239000010949 copper Substances 0.000 claims description 25
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 23
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 25
- 239000010931 gold Substances 0.000 description 17
- 239000011889 copper foil Substances 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 238000012360 testing method Methods 0.000 description 6
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
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- 238000005476 soldering Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
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- 229920001187 thermosetting polymer Polymers 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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Description
110 絶縁体
120 銅箔
130 ビアホール
140 メッキ層
150 回路パターン
160 PSR
170 ボンディングパッド
200 有機はんだ保存剤(OSP)
300 半導体素子
310 接着部材
320 ワイヤ
400 密封部材
500 溶媒剤(post flux)
600 はんだ(solder)
700 金属間化合物(intermetallic compound)
Claims (24)
- ボンディングパッドの形成されたBGAパッケージ基板を製作する第1段階と、
前記BGAパッケージ基板上に絶縁部材を塗布し、前記ボンディングパッドより小さいサイズの開口部を形成して前記ボンディングパッドを露出させる第2段階と、
前記ボンディングパッドを露出領域から前記絶縁部材に被覆された一部領域までエッチング処理して凹状形状のエッチング部を形成させる第3段階とを含むことを特徴とするBGAパッケージ基板の製作方法。 - 第1段階のボンディングパッドが形成されたBGAパッケージ基板の製作方法は、
銅張積層板に層間電気的接続のための多数のビアホールを加工する第1−1段階と、
前記銅張積層板および前記ビアホールに銅メッキを施してメッキ層を形成する第1−2段階と、
前記メッキ層にフォトエッチング工程を行って回路用およびボンディングパッド用回路パターンを形成する第1−3段階とを含むことを特徴とする請求項1記載のBGAパッケージ基板の製作方法。 - 前記第3段階の前記凹状形状のエッチング部は、側面が勾配を持ち底面が平らな形状であることを特徴とする請求項1記載のBGAパッケージ基板の製作方法。
- 前記ボンディングパッドに形成された前記開口部は、前記凹状形状のエッチング部によって茸状の係止部が形成されたことを特徴とする請求項1記載のBGAパッケージ基板の製作方法。
- 前記第3段階後、前記エッチング部に酸化防止のための表面処理をする第4段階をさらに含むことを特徴とする請求項1記載のBGAパッケージ基板の製作方法。
- 前記第4段階後、前記エッチング部と前記開口部に導電性接続部材を充填し、前記エッチング部に充填された前記導電性接続部材の上面の断面幅(L1)が前記開口部の断面幅(L2)より広い外部端子を形成する第5段階をさらに含むことを特徴とする請求項5記載のBGAパッケージ基板の製作方法。
- 前記エッチング部に導電性接続部材を充填させる方法は、
前記エッチング部に、粘性を有する有機はんだ保存剤を塗布する第5−1段階と、
前記有機はんだ保存剤を介して前記導電性接続部材を付着させる第5−2段階と、
前記導電性接続部材が付着している前記ボンディングパッドに対する赤外線リフローを行って、前記エッチング部と前記導電性接続部材とを接着させる金属間化合物を形成する第5−3段階とを含んでなることを特徴とする請求項6記載のBGAパッケージ基板の製作方法。 - 前記エッチング部と前記導電性接続部材との間に形成される前記金属間化合物は、前記絶縁部材の被覆された前記エッチング部の側面領域にまで形成されることを特徴とする請求項7記載のBGAパッケージ基板の製作方法。
- 前記導電性接続部材ははんだであることを特徴とする請求項6記載のBGAパッケージ製作方法。
- ボンディングパッドの形成されたBGAパッケージ基板を製作する第1段階と、
前記BGAパッケージ基板上に絶縁部材を塗布し、前記ボンディングパッドより小さいサイズの開口部を形成して前記ボンディングパッドを露出させる第2段階と、
前記ボンディングパッドを露出領域から前記絶縁部材に被覆された一部領域までエッチング処理して凹状形状のエッチング部を形成させる第3段階と、
前記BGAパッケージ基板上に半導体チップを実装しモールディングする第4段階とを含むことを特徴とするBGAパッケージの製作方法。 - 第1段階のボンディングパッドが形成されたBGAパッケージ基板の製作方法は、
銅張積層板に層間電気的接続のための多数のビアホールを加工する第1−1段階と、
前記銅張積層板および前記ビアホールに銅メッキを施してメッキ層を形成する第1−2段階と、
前記メッキ層にフォトエッチング工程を行って回路用およびボンディングパッド用回路パターンを形成する第1−3段階とを含むことを特徴とする請求項10記載のBGAパッケージの製作方法。 - 前記第3段階の前記凹状形状のエッチング部は、側面が勾配を持ち底面が平らな形状であることを特徴とする請求項10記載のBGAパッケージの製作方法。
- 前記第3段階後、前記エッチング部に酸化防止のための表面処理をする第5段階をさらに含むことを特徴とする請求項10記載のBGAパッケージの製作方法。
- 前記第4段階後、前記エッチング部と前記開口部に導電性接続部材を充填し、前記エッチング部に充填された前記導電性接続部材の上面の断面幅が前記開口部の断面幅より広い外部端子を形成する第6段階をさらに含むことを特徴とする請求項10記載のBGAパッケージの製作方法。
- 前記エッチング部に導電性接続部材を充填させる方法は、
前記エッチング部に、粘性を有する有機はんだ保存剤を塗布する第4−1段階と、
前記有機はんだ保存剤を介して導電性接続部材を付着させる第4−2段階と、
前記導電性接続部材が付着しているボンディングパッドに対する赤外線リフローを行い、前記エッチング部と前記導電性接続部材とを接着させる金属間化合物を形成する第4−3段階とを含んでなることを特徴とする請求項14記載のBGAパッケージの製作方法。 - 前記エッチング部と前記導電性接続部材との間に形成される前記金属間化合物は、前記絶縁部材の被覆された前記エッチング部の側面領域にまで形成されることを特徴とする請求項15記載のBGAパッケージの製作方法。
- 前記導電性接続部材ははんだであることを特徴とする請求項14記載のBGAパッケージの製作方法。
- 第1絶縁層と、
前記第1絶縁層上に形成され、ボンディングのために凹状形状の表面を有するボンディングパッドを含んだ外層回路層と、
前記外層回路層上に形成され、前記ボンディングパッド上で前記ボンディングパッドの凹状面より小さいサイズの開口部を形成して前記ボンディングパッドの凹状面の一部分を被覆し、互いに隔たって隙間が形成された第2絶縁層とを含むことを特徴とするBGAパッケージ基板。 - 前記ボンディングパッドの凹状面と前記第2絶縁層間の隙間および前記第2絶縁層の開口部の内部および外部に形成された導電性接続部材をさらに含むことを特徴とする請求項18記載のBGAパッケージ基板。
- 前記ボンディングパッド上に形成された酸化防止のための表面処理層をさらに含むことを特徴とする請求項18記載のBGAパッケージ基板。
- 前記凹状形状は、側面が勾配を持ち底面が平らな形状であることを特徴とする請求項18記載のBGAパッケージ基板。
- 第1絶縁層と、
前記第1絶縁層上に形成され、ワイヤボンディングのために平らな形状の第1ボンディングパッドを含んだ第1外層回路層と、
前記第1絶縁層の下部に形成され、ボンディングのために凹状形状の表面を有する第2ボンディングパッドを含んだ第2外層回路層と、
前記第1外層回路層および前記第2外層回路層上に形成され、前記第1ボンディングパッド上で前記第1ボンディングパッドより小さい開口部を形成し、前記第2ボンディングパッド上で第2ボンディングパッドの凹状面より小さいサイズの開口部を形成して前記ボンディングパッドの凹状面の一部分を被覆し、前記ボンディングパッドと互いに隔てられた第2絶縁層と、
前記第1外層回路層上の前記第2絶縁層上に形成され、前記第1ボンディングパッドにワイヤによって連結されたチップと、
前記第2ボンディングパッドの凹状面と前記第2絶縁層間の隙間および前記第2外層回路層上に形成された前記第2絶縁層の開口部の内部および外部に形成された導電性接続部材とを含むことを特徴とするBGAパッケージ。 - 前記第1ボンディングパッドおよび前記第2ボンディングパッド上に形成された酸化防止のための表面処理層をさらに含むことを特徴とする請求項22記載のBGAパッケージ。
- 前記第2ボンディングパッドの凹状形状は、側面が勾配を持ち底面が平らな形状であることを特徴とする請求項22記載のBGAパッケージ。
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