CN1186808C - 电路装置的制造方法 - Google Patents

电路装置的制造方法 Download PDF

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Publication number
CN1186808C
CN1186808C CNB021231524A CN02123152A CN1186808C CN 1186808 C CN1186808 C CN 1186808C CN B021231524 A CNB021231524 A CN B021231524A CN 02123152 A CN02123152 A CN 02123152A CN 1186808 C CN1186808 C CN 1186808C
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Prior art keywords
insulating resin
circuit arrangement
manufacture method
wiring layer
conductive wiring
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CNB021231524A
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CN1392599A (zh
Inventor
五十岚优助
坂本则明
小林义幸
中村岳史
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Abstract

以往，将具有导电图案的挠性板作为支承衬底采用，将半导体元件安装于其上，开发整体模装的半导体装置。存在不能形成多层配线结构及制造工序中绝缘树脂板的弯曲明显的问题。本发明提供一种电路装置的制造方法，使用由绝缘树脂被覆导电膜的单面的绝缘树脂板，在绝缘树脂上形成通孔，然后形成导电镀膜，故由蚀刻导电镀膜形成的第一导电配线层和多层连接的第二导电配线层实现多层配线结构。半导体元件固定安装在覆盖第一导电配线层的外敷层树脂上，从而，第一导电配线层形成精致的图案，且自由回旋。形成得较厚的第二导电膜在进行封装后蚀刻变薄，故第二导电配线层也可形成精致图案。

Description

电路装置的制造方法
技术领域
本发明涉及电路装置的制造方法，尤其涉及使用导电镀膜及导电膜的可实现薄型且能实现多层配线的电路装置的制造方法。
背景技术
近年来，IC组件正在用于移动设备或小型、高密度安装设备，固有的IC组件及其安装概念正在产生大的改变。例如，特开2000-133678号公报所公开的技术。它是关于作为绝缘树脂板的一例采用了挠性板聚酰亚胺树脂板的半导体装置的技术。
图13～图15是将挠性板50用作插件衬底的图。另外，各图中上面的图为平面图，下面的图为A-A线剖面图。
首先，在图13所示的挠性板50上通过粘接剂粘贴准备了铜箔图案51。该铜箔图案51因安装的半导体元件为晶体管、IC其图形不同，但是通常形成有焊接区51A、隔离岛51B。符号52是用于自挠性板50的背面取出电极的开口部，所述铜箔图案51露出。
接着，该挠性板50被搬送到装片机，如图14所示，安装半导体元件53。然后，该挠性板50被搬送到引线接合器，用金属细线54电连接焊接区51A和半导体元件53的焊接区。
最后，如图15(A)所示，在挠性板50的表面上设置封装树脂55进行封装。这里，用传递模被覆焊接区51A、隔离岛51B、半导体元件53及金属细线54。
然后，如图15(B)所示，设置焊料或焊球等连接机构56，通过焊料反射炉经开口部52形成与焊接区51A熔接的球状焊料56。而且，由于半导体元件53在挠性板50上矩阵状形成，故如图15所示被切割而一个个分离。
图15(C)所示的剖面图表示在挠性板50的两面作为电极形成51A和51D。该挠性板50通常是在两面上制作图案，由厂家提供。
发明内容
使用上述挠性板50的半导体装置不用公知的金属架，故具有可实现极小型、薄型的封装结构的优点。但是，实际上只能由设于挠性板50的表面上的一层铜箔图案51进行配线，故存在不能实现多层配线结构的问题。
为了实现多层配线结构要保持支承强度，为此，需要使挠性板50足够厚，约为200μm，具有与薄型化相悖的问题。
并且，在现有的制造方法中，挠性板50在上述制造装置例如装片机、引线接合器、传递模装置、反射炉等中搬送，并安装在被称作载物台或工作台的部分。
但是，当作为挠性板50的基础原料的绝缘树脂的厚度薄至50μm左右时，表面上形成的铜箔图案51的厚度也很薄，为9～35μm，这种情况下，如图16所示，存在弯曲、不易搬送且向所述载物台或工作台的安装性能差等缺点。这被认为是由于绝缘树脂自身非常薄而引起的弯曲、铜箔图案51和绝缘树脂的热膨胀系数之差引起的弯曲。尤其是，未使用玻璃布纤维的芯件的硬的绝缘材料当如图16所示弯曲时，会由于来自上部的加压而很容易地断裂。
开口部52的部分在制模时要自上部加压，故会作用使焊接区51A的周边向上弯曲的力，甚至会使焊接区51A的粘接性恶化。
当构成挠性板50的树脂材料自身无柔性或为了提高导热性而混入填充物时，就会变硬。若在该状态下用引线接合器进行接合，则有可能在接合部产生裂纹。在传递模模装时，模型接触的部分有时会产生裂纹，这一点如图16所示若存在弯曲则更明显。
如上所述的挠性板50是背面未形成电极的挠性板，如图15(C)所示，有时在挠性板50的背面也会形成电极51D。此时，由于电极51D会和所述制造装置接触或与该制造装置间的搬送装置的搬送面接触，故电极51D的背面会产生损伤。由于是存在该损伤的状态下作为电极，故在其后加热等时电极51D本身会产生裂纹。
当挠性板50的背面设有电极51D时，在传递模模装时，会产生不能与载物台面接触的问题。这种情况下，当如前所述挠性板50由硬的材料构成时，以电极51D为支点，电极51D的周围被向下加压，故会在挠性板50上产生裂纹。
本发明是为了解决上述问题而开发的，提出了采用由绝缘树脂粘合薄的第一导电膜和厚的第二导电膜的绝缘树脂板的方案。
但是，虽然实现了多层配线结构，并且在薄的第一导电膜上形成了精致图案，但在厚的第二导电膜上不能形成精致图案。
为了解决上述问题，本发明的电路装置的制造方法包括下述工序：形成用绝缘树脂被覆导电材料形成的导电膜表面全部区域的绝缘树脂板；在所述绝缘树脂板的所需部位的所述绝缘树脂上形成通孔，把设置了所述通孔部分的所述导电膜的表面露出；在所述通孔和所述绝缘树脂表面形成导电镀膜；将所述导电镀膜蚀刻形成第一导电配线层；在所述第一导电配线层上电绝缘地固定安装半导体元件；用封装树脂层被覆所述第一导电配线层及所述半导体元件；蚀刻所述导电膜整个面使其减薄，然后，蚀刻形成第二导电配线层；在所述第二导电配线层的所需部位形成外部电极。
由于导电膜形成得较厚，故即使绝缘树脂薄，也能够维持片状的电路衬底的平整性。
由于在用封装树脂层被覆第一导电配线层及半导体元件的工序之前，导电膜具有机械强度，之后使封装树脂层具有机械强度，故可用导电膜容易地形成第二导电配线层。其结果，绝缘树脂不必具有机械强度，可减薄至可保持电绝缘的厚度的程度。
另外，由于传递模装置的下模可以与导电膜整体面接触，故没有局部加压，可抑制绝缘树脂产生裂纹。
另外，在蚀刻导电膜，使其减薄后，对第二导电配线层进行制图，故第二导电配线层的精致图案化也可同时实现。
本发明的电路装置的另一制造方法包括下述工序：形成用绝缘树脂被覆了导电材料形成的导电膜表面全部区域的绝缘树脂板，在所述绝缘树脂板的所需部位的所述绝缘树脂上形成通孔，把设置了所述通孔部分的所述导电膜的表面露出，在所述通孔和所述绝缘树脂表面形成导电镀膜，形成将所述导电镀膜蚀刻而形成第一导电配线层的所述绝缘树脂板，然后，在所述绝缘树脂板的所述第一导电配线层上进行电绝缘并且固定粘接半导体元件的工序；利用密封树脂层覆盖所述绝缘树脂板的所述第一导电配线层及所述半导体元件的工序；将所述绝缘树脂板的所述导电膜全面蚀刻减薄后，蚀刻而形成第二导电配线层的工序；在所述绝缘树脂板的所述第二导电配线层形成外部电极的工序。
附图说明
图1是说明本发明电路装置的制造方法的剖面图；
图2是说明本发明电路装置的制造方法的剖面图；
图3是说明本发明电路装置的制造方法的剖面图；
图4是说明本发明电路装置的制造方法的剖面图；
图5是说明本发明电路装置的制造方法的剖面图；
图6是说明本发明电路装置的制造方法的剖面图；
图7是说明本发明电路装置的制造方法的剖面图；
图8是说明本发明电路装置的制造方法的剖面图；
图9是说明本发明电路装置的制造方法的剖面图；
图10是说明本发明电路装置的制造方法的剖面图；
图11是说明本发明制造的电路装置的平面图；
图12是说明本发明电路装置的制造方法的剖面图；
图13是说明现有的半导体装置的制造方法的图；
图14是说明现有的半导体装置的制造方法的图；
图15是说明现有的半导体装置的制造方法的图；
图16是说明现有的挠性板的图。
具体实施方式
下面参照图1～图12说明本发明的电路装置的制造方法。
本发明的电路装置的制造方法包括下述工序：准备用绝缘树脂被覆导电膜表面的绝缘树脂板；在所述绝缘树脂板的所需部位的所述绝缘树脂上形成通孔，选择性露出所述导电膜的背面；在所述通孔和所述绝缘树脂表面形成导电镀膜；将所述导电镀膜蚀刻为所需图案，形成第一导电配线层；在所述第一导电配线层上电绝缘地固定安装半导体元件；用封装树脂层被覆第一所述导电配线层及所述半导体元件；蚀刻所述导电膜整个面使其减薄，然后，蚀刻成所需图案，形成第二导电配线层；在所述第二导电配线层的所需部位形成外部电极。
如图1所示，本发明的第一工序是准备用绝缘树脂2被覆导电膜3表面的绝缘树脂板1 。
绝缘树脂板1是由绝缘树脂2被覆导电膜3表面整个区域而形成的。绝缘树脂2的材料是由聚酰亚胺树脂或环氧树脂等高分子构成的绝缘材料。导电膜3最好是以铜为主材料的材料或公知的引线架材料。
绝缘树脂板1首先在平膜状的导电膜3之上涂敷糊状的聚酰亚胺树脂，并使其半硬化而完成。因此，绝缘树脂板1具有可不要加强用玻璃布纤维的特征。
本发明的特征在于导电膜3形成得较厚。
导电膜3的厚度为70～200μm左右为好，这重视了使其具有支承强度这一点。
因此，可用导电膜3的厚度维持绝缘树脂板1的平坦性，可提高其后的工序的操作性，可防止在绝缘树脂2诱发缺陷、裂纹等。
绝缘树脂2最好是聚酰亚胺树脂、环氧树脂等。在涂敷糊状的材料形成板的模铸法的情况下，其膜厚为10μm～100μm左右。在作为板形成的情况下，市售件最小膜厚为25μm。另外，考虑到导热性，也可向其中混入填充物。材料可以考虑玻璃、氧化硅、氧化铝、氮化铝、硅碳化物、氮化硼等。
这样，绝缘树脂2可选择混入上述填充物的低热阻抗树脂、超低热阻抗树脂或聚酰亚胺树脂，可根据形成的电路装置的性质区分使用。
如图2所示，本发明的第二工序是在绝缘树脂板1的所需部位的绝缘树脂2上形成通孔21，使导电膜3的背面选择性露出。
仅使绝缘树脂2的形成通孔21的部分露出，用光致抗蚀剂被覆整个面。然后，以该光致抗蚀剂为掩模，用激光除去通孔21正下方的绝缘树脂2，使导电膜3的背面在通孔21的底露出。激光最好是二氧化碳激光。在用激光使绝缘树脂2蒸发后，在开口部的底部有残渣的情况下，用过锰酸钠或过硫酸铵等进行湿腐蚀，除去该残渣。通孔21的开口直径根据光刻法的图象分辨率而变化，在此为50～100μm。
如图3所示，本发明的第三工序是在通孔21及绝缘树脂2表面形成导电镀膜4。
在包括通孔21的绝缘树脂2整个面上无掩模地形成导电镀膜4。该导电镀膜4由无电解电镀和电解电镀两者形成，这里，利用无电解电镀至少在包括通孔21的绝缘树脂2整个面上形成约2μm的铜。由此，导电镀膜4和导电膜3电导通，再次以导电膜3为电极进行电解电镀，电镀约20μm的铜。由此，通孔21由铜的导电镀膜4填充。导电镀膜4这里采用了铜，但是，也可采用Au、Ag、Pd等。另外，也可使用掩模进行局部电镀。
如图4及图5所示，本发明的第四工序是在导电镀膜4上按所需的图案进行蚀刻，从而形成第一导电配线层5的工序。
用所需图案的光致抗蚀剂被覆在导电镀膜4上，通过化学蚀刻形成焊接区10及自焊接区10向中央延伸的第一导电配线层5。导电镀膜4是以铜为主材料的膜，故蚀刻液可用氯化铁或氯化铜。
导电镀膜4的厚度形成为5～20μm，故第一导电配线层5可形成20μm以下的精致图案。
接着，如图5所示，露出第一导电配线层5的焊接区10，将其他部分用外敷层树脂8被覆。外敷层树脂8是将用溶剂溶化的环氧树脂等通过网印法附着并使其热硬化而得到的。
在焊接区10上，考虑到接合性而形成有Au、Ag等的镀膜22。该镀膜22以外敷层树脂8为掩模选择性地无电场电镀在焊接区10上，或以导电膜3为电极，通过电场电镀而使其附着。
如图6所示，本发明的第五工序是电绝缘地将半导体元件7固定安装在第一导电配线层5上的工序。
半导体元件7以裸片状态用绝缘性粘接树脂25装在外敷层树脂8上。半导体元件7及其下的第一导电配线层5利用外敷层树脂8而电绝缘，故第一导电配线层5即使在半导体元件7之下也可自由配线，可实现多层配线结构。
半导体元件7的各电极接点9由接合引线11连接在设于周边的作为第一导电配线层5的一部分的焊接区10上。半导体元件7也可以用倒装法安装(参照图12)。这种情况下，在半导体元件7的各电极接点9表面上设有焊球或凸起(バンプ)，在绝缘树脂板1的表面上，在与焊球的位置对应的部分设有与焊接区10同样的电极。
下面叙述引线接合时使用绝缘树脂板1的优点。通常，在Au线的引线接合时，要加热到200℃～300℃。此时，若导电膜3很薄，则绝缘树脂板1会弯曲，在此状态下，若通过键合头使绝缘树脂板1被加压，则绝缘树脂板1可能会产生龟裂。这在将填充物混入绝缘树脂2而使材料自身变硬，从而丧失柔软性时更明显。由于树脂与金属相比较柔软，故在Au或Al的接合中，加压或超声波的能量会发散。但是，通过减薄绝缘树脂2并使导电膜3自身形成得较厚，可解决这些问题。
如图7所示，本发明的第六工序是用封装树脂层13被覆第一导电配线层5及半导体元件7的工序。
绝缘树脂板1装在制模装置上进行树脂模装。模装方法可以是传递模、注入模、涂敷、浸渍等。但是，考虑到批量生产性，还是传递模、注入模为合适。
在本工序中，绝缘树脂板1需要平整地接触模腔的下模，厚的导电膜3起该作用。而且，自模腔取出后，在直至封装树脂层13的收缩完全结束前，由导电膜3维持封装的平坦性。
也就是说，在本工序前，机械支承绝缘树脂板1的作用由导电膜3承担。
如图8及图9所示，本发明的第七工序是蚀刻导电膜3整个面并使其减薄后，按所需的图案进行蚀刻从而形成第二导电配线层6的工序。
如图8所示，对导电膜4无掩模地进行全面蚀刻使其变薄。蚀刻可用使用氯化铁或氯化铜的化学蚀刻，第二导电膜4的厚度均匀地从当初的70～200μm减薄至约一半的厚度即35μm左右。此时，可除去以前的工序中第二导电膜4上所产生的伤痕。
然后如图9所示，导电膜3由所需图案的光致抗蚀剂被覆，通过化学蚀刻形成第二导电配线层6。第二导电配线层6单独通过通孔21与第一导电配线层5电连接，实现多层配线结构。另外，如果需要也可在空白部分形成用于使第一导电配线层5交叉的第二导电配线层6。
如图10所示，本发明的第八工序是在第二导电配线层6的所需部位形成外部电极14的工序。
第二导电配线层6露出形成外部电极14的部分，网印由溶剂溶化的环氧树脂等，用外敷层树脂15被覆大部分。然后，利用焊料的反流或焊糊的网印，在该露出部分同时形成外部电极14。
最后，由于在绝缘树脂板1上矩阵状形成有多个电路装置，故通过切割封装树脂层13及绝缘树脂板1，将它们分离为单个的电路装置。
参照图11说明本发明的制造方法得到的具体化的电路装置。首先，实线所示的图案是第一导电配线层5，虚线所示的图案是第二导电配线层6。第一导电配线层5周边设有焊接区10，其包围半导体元件7，部分配置为两段，以对应具有多接点的半导体元件7。焊接区10由接合引线11与半导体元件7的对应的电极接点9连接，多个精致图案的第一导电配线层5自焊接区10向半导体元件7之下延伸，由实心黑球所示的通孔21与第二导电配线层6连接。
如果是这种结构，则即使是具有200以上接点的半导体元件，也可利用第一导电配线层5的精致图案，以多层配线结构延伸至所需的第二导电配线层6，可自设于第二导电配线层6的外部电极14向外部电路连接。
图12表示半导体元件7用倒装法安装的结构。与图10相同的结构赋予了同一符号。半导体元件7上设有凸起电极31，该凸起电极31和接点电极10连接。外敷层树脂8和半导体元件7的间隙由填充树脂32填充。该结构中，可去除接合引线，进一步减薄封装树脂层13的厚度。外部电极14也可由蚀刻导电膜3将其表面用金或钯的镀膜33被覆的凸起电极实现。
本发明具有下述优点。
第一、在用封装树脂层模装之前，可由导电膜消除绝缘树脂板的弯曲，可提高搬送性能等。
第二、在用二氧化碳激光形成设于绝缘树脂上的通孔后，形成作为第一导电配线层的导电镀膜，故与第二导电配线层的多层连接也可同时实现，工序极其简单。
第三、形成第一导电配线层的导电镀膜可形成得较薄，可使第一导电配线层形成极精细的图案。
第四、在形成封装树脂层之前，由导电膜机械支承绝缘树脂板，在形成第二导电配线层之后，由封装树脂层机械支承绝缘树脂板，故无论绝缘树脂的机械强度如何，均可实现极薄型的安装方法。
第五、无论绝缘树脂自身很硬，还是混入填充物而变硬，由于由导电膜支承，故制造工序中绝缘树脂板自身的平整性均高，均可防止裂纹的产生。
第六、绝缘树脂板由于很厚地形成导电膜，故可作为用于装片、引线接合器、半导体元件的封装的支承衬底利用。而且，即使在绝缘树脂材料自身柔软的情况下，也可提高引线接合时能量的传递，可提高引线接合操作性。
第七、第二导电膜在由封装树脂层模装后，进行蚀刻减去一半厚度，故可实现第二导电配线层的精致图案化，可与第一导电配线层一起实现微细图案的电路装置。

Claims (19)

1 一种电路装置的制造方法，其特征在于，包括下述工序：形成用绝缘树脂覆盖了导电材料形成的导电膜全表面的绝缘树脂板；在所述绝缘树脂板的所需部位的所述绝缘树脂上形成通孔，把设置了所述通孔部分的所述导电膜的表面露出；在所述通孔和所述绝缘树脂表面形成导电镀膜；将所述导电镀膜蚀刻形成第一导电配线层；在所述第一导电配线层上电绝缘地固定安装半导体元件；用封装树脂层覆盖所述第一导电配线层及所述半导体元件；蚀刻所述导电膜整个面使其减薄，然后，蚀刻形成第二导电配线层；在所述第二导电配线层的所需部位形成外部电极。
2、如权利要求1所述的电路装置的制造方法，其特征在于，所述导电膜及所述导电镀膜由铜形成。
3、如权利要求1所述的电路装置的制造方法，其特征在于，所述导电镀膜比所述导电膜膜厚形成得薄，使所述第一导电配线层比所述第二导电配线层形成精细宽的图案。
4、如权利要求1所述的电路装置的制造方法，其特征在于，所述导电膜比所述导电镀膜形成得厚，在由所述封装树脂层覆盖的工序之前，由所述导电膜支承所述电路装置。
5、如权利要求1所述的电路装置的制造方法，其特征在于，在由封装树脂层覆盖所述第一导电配线层和所述半导体元件的工序之后，由所述封装树脂层支承所述电路装置。
6、如权利要求1所述的电路装置的制造方法，其特征在于，所述通孔是由激光蚀刻所述绝缘树脂而形成的。
7、如权利要求6所述的电路装置的制造方法，其特征在于，所述激光蚀刻使用二氧化碳激光。
8、如权利要求1所述的电路装置的制造方法，其特征在于，所述导电镀膜在通过导电金属的无电场电镀后，在其上进行电场电镀而形成在所述通孔及所述绝缘树脂的表面上。
9、如权利要求1所述的电路装置的制造方法，其特征在于，在形成所述第一导电配线层之后，用外敷层树脂进行涂覆。
10、如权利要求9所述的电路装置的制造方法，其特征在于，在所述第一导电配线层自所述外敷层树脂露出的部位形成金或银的镀层。
11、如权利要求9所述的电路装置的制造方法，其特征在于，将所述半导体元件固定安装在所述外敷层树脂上。
12、如权利要求10所述的电路装置的制造方法，其特征在于，用接合引线连接所述半导体元件的电极和所述金或银的镀层。
13、如权利要求1所述的电路装置的制造方法，其特征在于，所述封装树脂层由传递模形成。
14、如权利要求1所述的电路装置的制造方法，其特征在于，所述导电膜无掩模整面均匀蚀刻而使其变薄。
15、如权利要求1所述的电路装置的制造方法，其特征在于，所述第二导电配线层由外敷层树脂涂覆。
16、如权利要求1所述的电路装置的制造方法，其特征在于，所述外部电极是把焊料进行网印而附着并且加热熔融而形成的。
17、如权利要求1所述的电路装置的制造方法，其特征在于，所述外部电极利用焊料的回流形成。
18、如权利要求1所述的电路装置的制造方法，其特征在于，所述外部电极是将所述导电膜蚀刻为所需图案，并将其表面镀金或钯而形成的。
19、一种电路装置的制造方法，其特征在于，包括下述工序：形成用绝缘树脂覆盖了导电材料形成的导电膜全表面的绝缘树脂板，在所述绝缘树脂板的所需部位的所述绝缘树脂上形成通孔，把设置了所述通孔部分的所述导电膜表面露出，在所述通孔和所述绝缘树脂表面形成导电镀膜，形成将所述导电镀膜蚀刻而形成第一导电配线层的所述绝缘树脂板，然后，
在所述绝缘树脂板的所述第一导电配线层上进行电绝缘并且固定粘接半导体元件的工序；
利用密封树脂层覆盖所述绝缘树脂板的所述第一导电配线层及所述半导体元件的工序；
将所述绝缘树脂板的所述导电膜全面蚀刻减薄后，蚀刻而形成第二导电配线层的工序；
在所述绝缘树脂板的所述第二导电配线层形成外部电极的工序。
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