CN1331155C - 基于选择存储单元与基准单元的电阻差读出数据的存储器 - Google Patents

基于选择存储单元与基准单元的电阻差读出数据的存储器 Download PDF

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Publication number
CN1331155C
CN1331155C CNB031199712A CN03119971A CN1331155C CN 1331155 C CN1331155 C CN 1331155C CN B031199712 A CNB031199712 A CN B031199712A CN 03119971 A CN03119971 A CN 03119971A CN 1331155 C CN1331155 C CN 1331155C
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mentioned
data
memory cell
lines
resistance
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CNB031199712A
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Chinese (zh)
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CN1467743A (zh
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日高秀人
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CNB031199712A 2002-07-11 2003-03-14 基于选择存储单元与基准单元的电阻差读出数据的存储器 Expired - Fee Related CN1331155C (zh)

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JP202659/02 2002-07-11
JP2002202659A JP4242117B2 (ja) 2002-07-11 2002-07-11 記憶装置
JP202659/2002 2002-07-11

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CN1467743A CN1467743A (zh) 2004-01-14
CN1331155C true CN1331155C (zh) 2007-08-08

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US (1) US6760251B2 (enExample)
JP (1) JP4242117B2 (enExample)
CN (1) CN1331155C (enExample)

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CN101483176B (zh) * 2008-01-08 2013-02-13 瑞萨电子株式会社 磁记录装置

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CN1860520B (zh) * 2003-05-20 2011-07-06 辛迪安特公司 数字底板
KR100615089B1 (ko) * 2004-07-14 2006-08-23 삼성전자주식회사 낮은 구동 전류를 갖는 자기 램
US7369428B2 (en) * 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
JP3935150B2 (ja) * 2004-01-20 2007-06-20 株式会社東芝 磁気ランダムアクセスメモリ
JP4646636B2 (ja) * 2004-02-20 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
US20050195629A1 (en) * 2004-03-02 2005-09-08 Leddige Michael W. Interchangeable connection arrays for double-sided memory module placement
US7184341B2 (en) * 2004-07-26 2007-02-27 Etron Technology, Inc. Method of data flow control for a high speed memory
DE102004047666B4 (de) * 2004-09-30 2015-04-02 Qimonda Ag Speicher mit Widerstandsspeicherzelle und Bewertungsschaltung
JP4890016B2 (ja) * 2005-03-16 2012-03-07 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US7339814B2 (en) * 2005-08-24 2008-03-04 Infineon Technologies Ag Phase change memory array having equalized resistance
US7688617B2 (en) * 2005-10-18 2010-03-30 Nec Corporation MRAM and operation method of the same
US8281221B2 (en) * 2005-10-18 2012-10-02 Nec Corporation Operation method of MRAM including correcting data for single-bit error and multi-bit error
JP2008065972A (ja) * 2006-08-10 2008-03-21 Nec Electronics Corp 半導体記憶装置
US20080173975A1 (en) * 2007-01-22 2008-07-24 International Business Machines Corporation Programmable resistor, switch or vertical memory cell
WO2008133087A1 (ja) * 2007-04-17 2008-11-06 Nec Corporation 半導体記憶装置及びその動作方法
US7859025B2 (en) * 2007-12-06 2010-12-28 International Business Machines Corporation Metal ion transistor
US7706176B2 (en) * 2008-01-07 2010-04-27 Qimonda Ag Integrated circuit, cell arrangement, method for manufacturing an integrated circuit and for reading a memory cell status, memory module
JP5150932B2 (ja) * 2008-04-04 2013-02-27 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5197477B2 (ja) * 2009-04-30 2013-05-15 株式会社東芝 半導体記憶装置
KR101068573B1 (ko) * 2009-04-30 2011-09-30 주식회사 하이닉스반도체 반도체 메모리 장치
JP2013026600A (ja) 2011-07-26 2013-02-04 Renesas Electronics Corp 半導体装置及び磁気ランダムアクセスメモリ
US8593173B2 (en) 2011-09-26 2013-11-26 Qualcomm Incorporated Programmable logic sensing in magnetic random access memory
US10497402B2 (en) 2012-03-30 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for high speed ROM cells
US8743580B2 (en) 2012-03-30 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for high speed ROM cells
KR102060488B1 (ko) * 2012-12-27 2019-12-30 삼성전자주식회사 불휘발성 랜덤 액세스 메모리 장치 및 그것의 데이터 읽기 방법
JP2013140667A (ja) * 2013-03-11 2013-07-18 Hitachi Ltd 半導体装置
US8723329B1 (en) * 2013-03-15 2014-05-13 Invensas Corporation In-package fly-by signaling
US9741434B2 (en) 2013-03-22 2017-08-22 SK Hynix Inc. Resistance change memory
JP2015185179A (ja) * 2014-03-20 2015-10-22 株式会社東芝 抵抗変化メモリ
US20160254318A1 (en) * 2015-02-27 2016-09-01 Qualcomm Incorporated MAGNETIC RANDOM ACCESS MEMORY (MRAM) BIT CELLS EMPLOYING SOURCE LINES (SLs) AND/OR BIT LINES (BLs) DISPOSED IN MULTIPLE, STACKED METAL LAYERS TO REDUCE MRAM BIT CELL RESISTANCE
WO2016186086A1 (ja) 2015-05-15 2016-11-24 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路
WO2019112068A1 (ja) 2017-12-08 2019-06-13 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路及びセンスアンプ
JP2019160368A (ja) * 2018-03-13 2019-09-19 東芝メモリ株式会社 半導体記憶装置
US11139012B2 (en) * 2019-03-28 2021-10-05 Samsung Electronics Co., Ltd. Resistive memory device having read currents for a memory cell and a reference cell in opposite directions
US11532783B2 (en) * 2020-03-05 2022-12-20 Tdk Corporation Magnetic recording array, neuromorphic device, and method of controlling magnetic recording array
US11705176B2 (en) 2020-08-07 2023-07-18 Tohoku University Storage circuit provided with variable resistance type elements, and its test device
JP7677611B2 (ja) 2021-03-03 2025-05-15 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路

Citations (1)

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Publication number Priority date Publication date Assignee Title
US6055178A (en) * 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array

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US6436526B1 (en) 1999-06-17 2002-08-20 Matsushita Electric Industrial Co., Ltd. Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell
JP3415586B2 (ja) 1999-12-16 2003-06-09 エヌイーシーマイクロシステム株式会社 同期型ｄｒａｍ
JP2003016777A (ja) * 2001-06-28 2003-01-17 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6606263B1 (en) * 2002-04-19 2003-08-12 Taiwan Semiconductor Manufacturing Company Non-disturbing programming scheme for magnetic RAM
JP2004062922A (ja) * 2002-07-25 2004-02-26 Renesas Technology Corp 不揮発性半導体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6055178A (en) * 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101483176B (zh) * 2008-01-08 2013-02-13 瑞萨电子株式会社 磁记录装置

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JP2004046962A (ja) 2004-02-12
JP4242117B2 (ja) 2009-03-18
US6760251B2 (en) 2004-07-06
US20040008556A1 (en) 2004-01-15
CN1467743A (zh) 2004-01-14

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