CN1303732C - 半导体激光器装置 - Google Patents

半导体激光器装置 Download PDF

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Publication number
CN1303732C
CN1303732C CNB2004100313021A CN200410031302A CN1303732C CN 1303732 C CN1303732 C CN 1303732C CN B2004100313021 A CNB2004100313021 A CN B2004100313021A CN 200410031302 A CN200410031302 A CN 200410031302A CN 1303732 C CN1303732 C CN 1303732C
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CN
China
Prior art keywords
film
dielectric film
refractive index
film thickness
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB2004100313021A
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English (en)
Chinese (zh)
Other versions
CN1543026A (zh
Inventor
松冈裕益
国次恭宏
西口晴美
八木哲哉
中川康幸
堀江淳一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1543026A publication Critical patent/CN1543026A/zh
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Publication of CN1303732C publication Critical patent/CN1303732C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CNB2004100313021A 2003-03-27 2004-03-26 半导体激光器装置 Expired - Lifetime CN1303732C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP88905/03 2003-03-27
JP2003088905A JP4097552B2 (ja) 2003-03-27 2003-03-27 半導体レーザ装置
JP88905/2003 2003-03-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100550793A Division CN100411262C (zh) 2003-03-27 2004-03-26 半导体激光器装置

Publications (2)

Publication Number Publication Date
CN1543026A CN1543026A (zh) 2004-11-03
CN1303732C true CN1303732C (zh) 2007-03-07

Family

ID=32985224

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2004100313021A Expired - Lifetime CN1303732C (zh) 2003-03-27 2004-03-26 半导体激光器装置
CNB2006100550793A Expired - Lifetime CN100411262C (zh) 2003-03-27 2004-03-26 半导体激光器装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2006100550793A Expired - Lifetime CN100411262C (zh) 2003-03-27 2004-03-26 半导体激光器装置

Country Status (6)

Country Link
US (1) US7106775B2 (https=)
JP (1) JP4097552B2 (https=)
KR (2) KR100668096B1 (https=)
CN (2) CN1303732C (https=)
DE (1) DE102004013109B4 (https=)
TW (1) TWI239703B (https=)

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JPH0839698A (ja) * 1994-07-27 1996-02-13 Mitsui Petrochem Ind Ltd 散水用チューブの継手
JP2003243764A (ja) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP2004327581A (ja) * 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法
JP4286683B2 (ja) * 2004-02-27 2009-07-01 ローム株式会社 半導体レーザ
JP2006128475A (ja) * 2004-10-29 2006-05-18 Mitsubishi Electric Corp 半導体レーザ
JP2006351966A (ja) * 2005-06-17 2006-12-28 Sony Corp 多波長半導体レーザ素子
JP4923489B2 (ja) 2005-09-05 2012-04-25 三菱電機株式会社 半導体レーザ装置
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP2007280975A (ja) * 2006-03-13 2007-10-25 Mitsubishi Electric Corp 半導体レーザ
JP4444304B2 (ja) * 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP4294699B2 (ja) 2007-02-26 2009-07-15 三菱電機株式会社 半導体レーザ装置
JP5162926B2 (ja) 2007-03-07 2013-03-13 三菱電機株式会社 半導体レーザ装置の製造方法
JP4946524B2 (ja) 2007-03-08 2012-06-06 三菱電機株式会社 半導体レーザ装置
JP2009170801A (ja) * 2008-01-18 2009-07-30 Mitsubishi Electric Corp 半導体レーザ
WO2010005027A1 (ja) * 2008-07-10 2010-01-14 浜岡東芝エレクトロニクス株式会社 半導体レーザ装置
JP2010219436A (ja) * 2009-03-18 2010-09-30 Sony Corp 多波長半導体レーザおよび光学記録再生装置
DE102015116335B4 (de) 2015-09-28 2024-10-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
CN106207753B (zh) * 2016-09-06 2019-09-03 青岛海信宽带多媒体技术有限公司 半导体激光芯片及其制造方法、半导体激光装置
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
CN111193184A (zh) * 2019-12-30 2020-05-22 腾景科技股份有限公司 一种镀在半导体激光器腔面用于选模的超窄带超薄反射膜
WO2021187081A1 (ja) * 2020-03-17 2021-09-23 パナソニック株式会社 半導体レーザ素子
KR102397558B1 (ko) * 2020-10-29 2022-05-17 주식회사 오이솔루션 Dfb 반도체 레이저
WO2022185970A1 (ja) * 2021-03-05 2022-09-09 株式会社堀場製作所 半導体レーザ装置
JP7802468B2 (ja) * 2021-06-29 2026-01-20 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体発光素子
CN113402275B (zh) * 2021-08-12 2022-09-02 齐鲁工业大学 一种多层bmn介质薄膜材料及其制备方法
US12424819B2 (en) * 2022-05-26 2025-09-23 Arima Lasers Corp. Edge-emitting semiconductor laser with high thermal conductivity and low reflection front mirror surface
KR102930144B1 (ko) * 2023-11-20 2026-02-24 한국광기술원 희토류 기판 상에 코팅되는 무반사 코팅층

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839901A (en) * 1987-08-25 1989-06-13 Alcatel N.V. Semiconductor laser with constant differential quantum efficiency or constant optical power output
US4975922A (en) * 1988-06-27 1990-12-04 Sharp Kabushiki Kaisha Multi-layered dielectric film
JPH09129983A (ja) * 1995-11-02 1997-05-16 Sony Corp 半導体発光素子
JPH10247756A (ja) * 1997-03-04 1998-09-14 Sharp Corp 半導体レーザ素子
JP2001077456A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体レーザおよび光学部品用コート膜
JP2002094173A (ja) * 2000-09-14 2002-03-29 Mitsubishi Electric Corp 半導体レーザ装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4925259A (en) 1988-10-20 1990-05-15 The United States Of America As Represented By The United States Department Of Energy Multilayer optical dielectric coating
JP3080312B2 (ja) 1989-10-31 2000-08-28 ソニー株式会社 半導体レーザの製造方法
JPH0418784A (ja) 1990-02-13 1992-01-22 Fuji Electric Co Ltd 半導体レーザ素子の保護膜
JP3014208B2 (ja) * 1992-02-27 2000-02-28 三菱電機株式会社 半導体光素子
JP3399049B2 (ja) 1992-10-27 2003-04-21 松下電器産業株式会社 半導体レーザ装置
JPH06138303A (ja) * 1992-10-28 1994-05-20 Olympus Optical Co Ltd プラスチック製光学部品の反射防止膜
JP3863577B2 (ja) * 1994-11-14 2006-12-27 三洋電機株式会社 半導体レーザ
US6020992A (en) 1997-06-16 2000-02-01 Laser Power Corporation Low absorption coatings for infrared laser optical elements
US6094730A (en) * 1997-10-27 2000-07-25 Hewlett-Packard Company Hardware-assisted firmware tracing method and apparatus
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
JP4033644B2 (ja) 2000-07-18 2008-01-16 日亜化学工業株式会社 窒化ガリウム系発光素子
JP2002223030A (ja) 2001-01-24 2002-08-09 Toshiba Corp 半導体レーザ装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839901A (en) * 1987-08-25 1989-06-13 Alcatel N.V. Semiconductor laser with constant differential quantum efficiency or constant optical power output
US4975922A (en) * 1988-06-27 1990-12-04 Sharp Kabushiki Kaisha Multi-layered dielectric film
JPH09129983A (ja) * 1995-11-02 1997-05-16 Sony Corp 半導体発光素子
JPH10247756A (ja) * 1997-03-04 1998-09-14 Sharp Corp 半導体レーザ素子
JP2001077456A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体レーザおよび光学部品用コート膜
JP2002094173A (ja) * 2000-09-14 2002-03-29 Mitsubishi Electric Corp 半導体レーザ装置

Also Published As

Publication number Publication date
KR20060102321A (ko) 2006-09-27
CN1819378A (zh) 2006-08-16
KR20040084838A (ko) 2004-10-06
CN1543026A (zh) 2004-11-03
DE102004013109A1 (de) 2004-11-11
US20040190576A1 (en) 2004-09-30
CN100411262C (zh) 2008-08-13
TWI239703B (en) 2005-09-11
US7106775B2 (en) 2006-09-12
JP4097552B2 (ja) 2008-06-11
JP2004296903A (ja) 2004-10-21
KR100668096B1 (ko) 2007-01-15
KR100709281B1 (ko) 2007-04-19
TW200423505A (en) 2004-11-01
DE102004013109B4 (de) 2010-02-04

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