CN1273870C - 形成光刻用防反射膜的组合物 - Google Patents
形成光刻用防反射膜的组合物 Download PDFInfo
- Publication number
- CN1273870C CN1273870C CNB028199154A CN02819915A CN1273870C CN 1273870 C CN1273870 C CN 1273870C CN B028199154 A CNB028199154 A CN B028199154A CN 02819915 A CN02819915 A CN 02819915A CN 1273870 C CN1273870 C CN 1273870C
- Authority
- CN
- China
- Prior art keywords
- formula
- antireflection film
- polymer
- composition
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
- C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
- C08G59/1438—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing oxygen
- C08G59/1455—Monocarboxylic acids, anhydrides, halides, or low-molecular-weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
- C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
- C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
- H10P76/2043—Photolithographic processes using an anti-reflective coating
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
- C08G2650/56—Polyhydroxyethers, e.g. phenoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001313089 | 2001-10-10 | ||
| JP313089/2001 | 2001-10-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1564968A CN1564968A (zh) | 2005-01-12 |
| CN1273870C true CN1273870C (zh) | 2006-09-06 |
Family
ID=19131637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028199154A Expired - Lifetime CN1273870C (zh) | 2001-10-10 | 2002-10-04 | 形成光刻用防反射膜的组合物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7425347B2 (https=) |
| JP (1) | JP3918942B2 (https=) |
| KR (1) | KR100903153B1 (https=) |
| CN (1) | CN1273870C (https=) |
| TW (1) | TWI308671B (https=) |
| WO (1) | WO2003034152A1 (https=) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4798938B2 (ja) * | 2003-04-11 | 2011-10-19 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトレジストシステム |
| JP4105036B2 (ja) * | 2003-05-28 | 2008-06-18 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
| WO2005036268A1 (ja) * | 2003-10-14 | 2005-04-21 | Asahi Denka Co., Ltd. | フォトレジスト組成物 |
| KR100586165B1 (ko) * | 2003-12-30 | 2006-06-07 | 동부일렉트로닉스 주식회사 | 바닥 반사 방지 코팅 방법 |
| JP2006133315A (ja) * | 2004-11-02 | 2006-05-25 | Matsushita Electric Ind Co Ltd | 平坦化材料、反射防止膜形成材料、及びこれらを用いた半導体装置の製造方法 |
| KR100643918B1 (ko) * | 2004-12-21 | 2006-11-10 | 매그나칩 반도체 유한회사 | 유기 반사 방지막용 고분자 수지 및 유기 반사 방지막조성물, 및 이를 이용한 패턴 형성 방법 |
| JP4539845B2 (ja) * | 2005-03-17 | 2010-09-08 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
| CN102621814A (zh) * | 2005-04-19 | 2012-08-01 | 日产化学工业株式会社 | 用于形成光交联固化的抗蚀剂下层膜的抗蚀剂下层膜形成组合物 |
| EP1876495B1 (en) * | 2005-04-19 | 2011-07-20 | Nissan Chemical Industries, Ltd. | Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography |
| JP5062420B2 (ja) * | 2005-05-24 | 2012-10-31 | 日産化学工業株式会社 | ポリシラン化合物を含むリソグラフィー用下層膜形成組成物 |
| TWI340607B (en) * | 2005-08-12 | 2011-04-11 | Au Optronics Corp | Organic electroluminescent display panel and fabricating method thereof |
| WO2008047638A1 (en) * | 2006-10-12 | 2008-04-24 | Nissan Chemical Industries, Ltd. | Process for semiconductor device production using under-resist film cured by photocrosslinking |
| KR100876783B1 (ko) * | 2007-01-05 | 2009-01-09 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
| JP5447832B2 (ja) * | 2007-02-27 | 2014-03-19 | 日産化学工業株式会社 | 電子線リソグラフィー用レジスト下層膜形成組成物 |
| US20080286689A1 (en) * | 2007-05-14 | 2008-11-20 | Hong Zhuang | Antireflective Coating Compositions |
| JP4993139B2 (ja) | 2007-09-28 | 2012-08-08 | 信越化学工業株式会社 | 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法 |
| US8859673B2 (en) * | 2008-02-25 | 2014-10-14 | Honeywell International, Inc. | Processable inorganic and organic polymer formulations, methods of production and uses thereof |
| JP2009276724A (ja) * | 2008-05-19 | 2009-11-26 | Nitto Denko Corp | 光導波路装置の製造方法 |
| KR101266291B1 (ko) * | 2008-12-30 | 2013-05-22 | 제일모직주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법 |
| KR101266290B1 (ko) * | 2008-12-30 | 2013-05-22 | 제일모직주식회사 | 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| JP5457955B2 (ja) * | 2010-06-28 | 2014-04-02 | 富士フイルム株式会社 | レーザー彫刻用樹脂組成物、レーザー彫刻用レリーフ印刷版原版、レーザー彫刻用レリーフ印刷版原版の製造方法、及び、レリーフ印刷版の製版方法 |
| US9751974B2 (en) * | 2013-09-06 | 2017-09-05 | Honeywell Federal Manufacturing & Technologies, Llc | Aminoanthracene—epoxy nanocomposite containing free anthracene |
| JP2015199916A (ja) * | 2014-04-02 | 2015-11-12 | Jsr株式会社 | 膜形成用組成物及びパターン形成方法 |
| KR102156732B1 (ko) * | 2014-04-25 | 2020-09-16 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성 조성물 및 이것을 이용한 레지스트 패턴의 형성방법 |
| US9324604B2 (en) * | 2014-07-04 | 2016-04-26 | Rohm And Haas Electronic Materials Llc | Gap-fill methods |
| KR102460271B1 (ko) * | 2015-04-03 | 2022-10-28 | 닛산 가가쿠 가부시키가이샤 | 광가교기를 가지는 단차 기판 피복 조성물 |
| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
| US20170370017A1 (en) * | 2016-06-27 | 2017-12-28 | Tel Nexx, Inc. | Wet processing system and method of operating |
| US11674051B2 (en) | 2017-09-13 | 2023-06-13 | Nissan Chemical Corporation | Stepped substrate coating composition containing compound having curable functional group |
| US12436462B2 (en) * | 2021-11-17 | 2025-10-07 | Shin-Etsu Chemical Co., Ltd. | Positive resist composition and pattern forming process |
| US20250333565A1 (en) * | 2022-05-24 | 2025-10-30 | Nissan Chemical Corporation | Chemical-resistant protective film |
| KR20250016138A (ko) * | 2022-05-24 | 2025-02-03 | 닛산 가가쿠 가부시키가이샤 | 약액내성 보호막 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2050105T3 (es) * | 1987-02-13 | 1994-05-16 | Toray Industries | Articulo optico anti-reflectante y procedimiento para su fabricacion. |
| US5693691A (en) * | 1995-08-21 | 1997-12-02 | Brewer Science, Inc. | Thermosetting anti-reflective coatings compositions |
| DE69738783D1 (de) * | 1996-10-08 | 2008-07-31 | Hitachi Chemical Co Ltd | Halbleiteranordnung, halbleiterchipträgersubstrat, herstellungsverfahren für anordnung und substrat, klebstoff und doppelseitiges haftklebeband |
| US5919599A (en) * | 1997-09-30 | 1999-07-06 | Brewer Science, Inc. | Thermosetting anti-reflective coatings at deep ultraviolet |
| JPH11154638A (ja) | 1997-11-20 | 1999-06-08 | Toshiba Corp | パターン形成方法 |
| US6316165B1 (en) | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
| JP2001022084A (ja) | 1999-05-06 | 2001-01-26 | Tokyo Ohka Kogyo Co Ltd | 微細パターン形成方法 |
| JP4288776B2 (ja) | 1999-08-03 | 2009-07-01 | Jsr株式会社 | 反射防止膜形成組成物 |
| JP2001081203A (ja) | 1999-09-17 | 2001-03-27 | Hitachi Chem Co Ltd | 樹脂シート、金属はく張り積層板及び多層プリント配線板 |
| TW556047B (en) * | 2000-07-31 | 2003-10-01 | Shipley Co Llc | Coated substrate, method for forming photoresist relief image, and antireflective composition |
| JP2002333717A (ja) | 2001-05-07 | 2002-11-22 | Nissan Chem Ind Ltd | リソグラフィー用反射防止膜形成組成物 |
| TW576859B (en) * | 2001-05-11 | 2004-02-21 | Shipley Co Llc | Antireflective coating compositions |
-
2002
- 2002-10-04 KR KR1020047005279A patent/KR100903153B1/ko not_active Expired - Lifetime
- 2002-10-04 WO PCT/JP2002/010372 patent/WO2003034152A1/ja not_active Ceased
- 2002-10-04 CN CNB028199154A patent/CN1273870C/zh not_active Expired - Lifetime
- 2002-10-04 US US10/491,954 patent/US7425347B2/en not_active Expired - Lifetime
- 2002-10-04 JP JP2003536822A patent/JP3918942B2/ja not_active Expired - Fee Related
- 2002-10-09 TW TW091123333A patent/TWI308671B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100903153B1 (ko) | 2009-06-17 |
| US7425347B2 (en) | 2008-09-16 |
| JP3918942B2 (ja) | 2007-05-23 |
| WO2003034152A1 (en) | 2003-04-24 |
| US20050008964A1 (en) | 2005-01-13 |
| JPWO2003034152A1 (ja) | 2005-02-03 |
| CN1564968A (zh) | 2005-01-12 |
| KR20050033528A (ko) | 2005-04-12 |
| TWI308671B (https=) | 2009-04-11 |
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