WO2003034152A1 - Composition de formation d'un film antireflet pour lithographie - Google Patents

Composition de formation d'un film antireflet pour lithographie Download PDF

Info

Publication number
WO2003034152A1
WO2003034152A1 PCT/JP2002/010372 JP0210372W WO03034152A1 WO 2003034152 A1 WO2003034152 A1 WO 2003034152A1 JP 0210372 W JP0210372 W JP 0210372W WO 03034152 A1 WO03034152 A1 WO 03034152A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
antireflection film
lithography
weight
polymer
Prior art date
Application number
PCT/JP2002/010372
Other languages
English (en)
French (fr)
Inventor
Satoshi Takei
Yoshiaki Yasumi
Ken-Ichi Mizusawa
Original Assignee
Nissan Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to US10/491,954 priority Critical patent/US7425347B2/en
Priority to JP2003536822A priority patent/JP3918942B2/ja
Publication of WO2003034152A1 publication Critical patent/WO2003034152A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14—Polycondensates modified by chemical after-treatment
    • C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
    • C08G59/1438—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing oxygen
    • C08G59/1455—Monocarboxylic acids, anhydrides, halides, or low-molecular-weight esters thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/56—Polyhydroxyethers, e.g. phenoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Materials For Photolithography (AREA)
PCT/JP2002/010372 2001-10-10 2002-10-04 Composition de formation d'un film antireflet pour lithographie WO2003034152A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/491,954 US7425347B2 (en) 2001-10-10 2002-10-04 Composition for forming anti-reflective coating for use in lithography
JP2003536822A JP3918942B2 (ja) 2001-10-10 2002-10-04 リソグラフィー用反射防止膜形成組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-313089 2001-10-10
JP2001313089 2001-10-10

Publications (1)

Publication Number Publication Date
WO2003034152A1 true WO2003034152A1 (fr) 2003-04-24

Family

ID=19131637

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/010372 WO2003034152A1 (fr) 2001-10-10 2002-10-04 Composition de formation d'un film antireflet pour lithographie

Country Status (6)

Country Link
US (1) US7425347B2 (ja)
JP (1) JP3918942B2 (ja)
KR (1) KR100903153B1 (ja)
CN (1) CN1273870C (ja)
TW (1) TWI308671B (ja)
WO (1) WO2003034152A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005106837A (ja) * 2003-04-11 2005-04-21 Rohm & Haas Electronic Materials Llc フォトレジストシステム
JP2006259249A (ja) * 2005-03-17 2006-09-28 Shin Etsu Chem Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
WO2008047638A1 (fr) * 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. Procédé de fabrication d'un dispositif semi-conducteur à l'aide d'un film sous-résist durci par photoréticulation
JP2008172211A (ja) * 2007-01-05 2008-07-24 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法
WO2008105266A1 (ja) * 2007-02-27 2008-09-04 Nissan Chemical Industries, Ltd. 電子線リソグラフィー用レジスト下層膜形成組成物
JPWO2006115074A1 (ja) * 2005-04-19 2008-12-18 日産化学工業株式会社 エチレンジカルボニル構造を有するポリマーを含むリソグラフィー用反射防止膜形成組成物
JP2009098639A (ja) * 2007-09-28 2009-05-07 Shin Etsu Chem Co Ltd 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
CN1853138B (zh) * 2003-10-14 2011-06-15 株式会社Adeka 光致抗蚀剂组合物
JP2016028416A (ja) * 2014-07-04 2016-02-25 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ギャップ充填方法
WO2019054420A1 (ja) * 2017-09-13 2019-03-21 日産化学株式会社 硬化性官能基を有する化合物を含む段差基板被覆組成物

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4105036B2 (ja) * 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
KR100586165B1 (ko) * 2003-12-30 2006-06-07 동부일렉트로닉스 주식회사 바닥 반사 방지 코팅 방법
JP2006133315A (ja) * 2004-11-02 2006-05-25 Matsushita Electric Ind Co Ltd 平坦化材料、反射防止膜形成材料、及びこれらを用いた半導体装置の製造方法
KR100643918B1 (ko) * 2004-12-21 2006-11-10 매그나칩 반도체 유한회사 유기 반사 방지막용 고분자 수지 및 유기 반사 방지막조성물, 및 이를 이용한 패턴 형성 방법
US8426111B2 (en) * 2005-04-19 2013-04-23 Nissan Chemical Industries, Ltd. Resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating
WO2006126406A1 (ja) * 2005-05-24 2006-11-30 Nissan Chemical Industries, Ltd. ポリシラン化合物を含むリソグラフィー用下層膜形成組成物
TWI340607B (en) * 2005-08-12 2011-04-11 Au Optronics Corp Organic electroluminescent display panel and fabricating method thereof
US20080286689A1 (en) * 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
WO2009108574A2 (en) * 2008-02-25 2009-09-03 Honeywell International Inc. Processable inorganic and organic polymer formulations, methods of production and uses thereof
JP2009276724A (ja) * 2008-05-19 2009-11-26 Nitto Denko Corp 光導波路装置の製造方法
KR101266290B1 (ko) * 2008-12-30 2013-05-22 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR101266291B1 (ko) * 2008-12-30 2013-05-22 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법
JP5457955B2 (ja) * 2010-06-28 2014-04-02 富士フイルム株式会社 レーザー彫刻用樹脂組成物、レーザー彫刻用レリーフ印刷版原版、レーザー彫刻用レリーフ印刷版原版の製造方法、及び、レリーフ印刷版の製版方法
US9751974B2 (en) * 2013-09-06 2017-09-05 Honeywell Federal Manufacturing & Technologies, Llc Aminoanthracene—epoxy nanocomposite containing free anthracene
JP2015199916A (ja) * 2014-04-02 2015-11-12 Jsr株式会社 膜形成用組成物及びパターン形成方法
KR102156732B1 (ko) * 2014-04-25 2020-09-16 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물 및 이것을 이용한 레지스트 패턴의 형성방법
WO2016159358A1 (ja) * 2015-04-03 2016-10-06 日産化学工業株式会社 光架橋基を有する段差基板被覆組成物
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US20170370017A1 (en) * 2016-06-27 2017-12-28 Tel Nexx, Inc. Wet processing system and method of operating
WO2023228662A1 (ja) * 2022-05-24 2023-11-30 日産化学株式会社 薬液耐性保護膜
WO2023228661A1 (ja) * 2022-05-24 2023-11-30 日産化学株式会社 薬液耐性保護膜

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154638A (ja) * 1997-11-20 1999-06-08 Toshiba Corp パターン形成方法
JP2001022084A (ja) * 1999-05-06 2001-01-26 Tokyo Ohka Kogyo Co Ltd 微細パターン形成方法
JP2001040293A (ja) * 1999-08-03 2001-02-13 Jsr Corp 反射防止膜形成組成物
JP2001081203A (ja) * 1999-09-17 2001-03-27 Hitachi Chem Co Ltd 樹脂シート、金属はく張り積層板及び多層プリント配線板
JP2002333717A (ja) * 2001-05-07 2002-11-22 Nissan Chem Ind Ltd リソグラフィー用反射防止膜形成組成物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE104064T1 (de) * 1987-02-13 1994-04-15 Toray Industries Entspiegelter optischer gegenstand und verfahren zu dessen herstellung.
US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
WO1998015975A1 (fr) * 1996-10-08 1998-04-16 Hitachi Chemical Company, Ltd. Dispositif semi-conducteur, substrat de montage d'une puce de semi-conducteur, leurs procedes de fabrication, adhesif, et film a double couche d'adhesif
US5919599A (en) 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
US6316165B1 (en) 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
TW556047B (en) * 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition
TW576859B (en) * 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154638A (ja) * 1997-11-20 1999-06-08 Toshiba Corp パターン形成方法
JP2001022084A (ja) * 1999-05-06 2001-01-26 Tokyo Ohka Kogyo Co Ltd 微細パターン形成方法
JP2001040293A (ja) * 1999-08-03 2001-02-13 Jsr Corp 反射防止膜形成組成物
JP2001081203A (ja) * 1999-09-17 2001-03-27 Hitachi Chem Co Ltd 樹脂シート、金属はく張り積層板及び多層プリント配線板
JP2002333717A (ja) * 2001-05-07 2002-11-22 Nissan Chem Ind Ltd リソグラフィー用反射防止膜形成組成物

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005106837A (ja) * 2003-04-11 2005-04-21 Rohm & Haas Electronic Materials Llc フォトレジストシステム
CN1853138B (zh) * 2003-10-14 2011-06-15 株式会社Adeka 光致抗蚀剂组合物
JP2006259249A (ja) * 2005-03-17 2006-09-28 Shin Etsu Chem Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
JP4539845B2 (ja) * 2005-03-17 2010-09-08 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
JPWO2006115074A1 (ja) * 2005-04-19 2008-12-18 日産化学工業株式会社 エチレンジカルボニル構造を有するポリマーを含むリソグラフィー用反射防止膜形成組成物
JP4840609B2 (ja) * 2005-04-19 2011-12-21 日産化学工業株式会社 エチレンジカルボニル構造を有するポリマーを含むリソグラフィー用反射防止膜形成組成物
WO2008047638A1 (fr) * 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. Procédé de fabrication d'un dispositif semi-conducteur à l'aide d'un film sous-résist durci par photoréticulation
US8227172B2 (en) 2006-10-12 2012-07-24 Nissan Chemical Industries, Ltd. Method of producing semiconductor device using resist underlayer film by photo-crosslinking curing
JP2008172211A (ja) * 2007-01-05 2008-07-24 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法
WO2008105266A1 (ja) * 2007-02-27 2008-09-04 Nissan Chemical Industries, Ltd. 電子線リソグラフィー用レジスト下層膜形成組成物
JPWO2008105266A1 (ja) * 2007-02-27 2010-06-03 日産化学工業株式会社 電子線リソグラフィー用レジスト下層膜形成組成物
US8603731B2 (en) 2007-02-27 2013-12-10 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition for electron beam lithography
JP5447832B2 (ja) * 2007-02-27 2014-03-19 日産化学工業株式会社 電子線リソグラフィー用レジスト下層膜形成組成物
JP2009098639A (ja) * 2007-09-28 2009-05-07 Shin Etsu Chem Co Ltd 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
KR101235504B1 (ko) 2007-09-28 2013-02-20 신에쓰 가가꾸 고교 가부시끼가이샤 반사 방지막 형성 재료, 반사 방지막 및 이를 이용한 패턴 형성 방법
JP2016028416A (ja) * 2014-07-04 2016-02-25 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ギャップ充填方法
WO2019054420A1 (ja) * 2017-09-13 2019-03-21 日産化学株式会社 硬化性官能基を有する化合物を含む段差基板被覆組成物
US11674051B2 (en) 2017-09-13 2023-06-13 Nissan Chemical Corporation Stepped substrate coating composition containing compound having curable functional group

Also Published As

Publication number Publication date
JP3918942B2 (ja) 2007-05-23
TWI308671B (ja) 2009-04-11
CN1273870C (zh) 2006-09-06
US7425347B2 (en) 2008-09-16
KR20050033528A (ko) 2005-04-12
JPWO2003034152A1 (ja) 2005-02-03
US20050008964A1 (en) 2005-01-13
KR100903153B1 (ko) 2009-06-17
CN1564968A (zh) 2005-01-12

Similar Documents

Publication Publication Date Title
WO2003034152A1 (fr) Composition de formation d'un film antireflet pour lithographie
EP2981985B1 (en) Highly etch-resistant polymer block for use in block copolymers for directed self-assembly
WO2008055137A3 (en) Si-containing polymers for nano-pattern device fabrication
US9249013B2 (en) Silicon hardmask layer for directed self-assembly
EP1324399B1 (en) Method for manufacturing a light-emitting device
TW200508792A (en) Anti-reflection film material and substrate having anti-reflection film and method for forming pattern
US20070122749A1 (en) Method of nanopatterning, a resist film for use therein, and an article including the resist film
JP2003031650A5 (ja)
MY113878A (en) Semiconductor apparatus having wiring groove and contact hole formed in self-alignment manner and method of fabricating the same
TW200523998A (en) Techniques for patterning features in semiconductor devices
WO2003017002A1 (fr) Composition permettant la formation d'un film anti-reflechissant destine a etre utilise en lithographie
EP1237042A3 (en) Bottom anti-reflective coat forming composition for lithography
TW200710992A (en) Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication
WO2002080239A3 (en) Process for forming sub-lithographic photoresist features
WO2014120320A2 (en) Formation of a composite pattern including a periodic pattern self-aligned to a prepattern
JP2014507795A (ja) 高度なパターン形成に必要な小型フィーチャのパターン形成プロセス
KR100861176B1 (ko) 무기계 하드마스크용 조성물 및 이를 이용한 반도체 소자의 제조방법
TW200722455A (en) Polymer for hard mask of semiconductor device and composition containing the same
TWI262575B (en) Patterning layers comprised of spin-on ceramic films
WO2003087938A3 (en) Plasma polymerized electron beam resist
EP1172692A3 (en) Phase shift mask blank, phase shift mask, and methods of manufacture
CN108231547B (zh) 半导体装置的形成方法
WO2003100828A3 (en) Method of depositing an oxide film by chemical vapor deposition
JPS60119549A (ja) パタ−ン形成材料及びパタ−ン形成法
TW346643B (en) Process for producing polycide with fine line width

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP KR

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FR GB GR IE IT LU MC NL PT SE SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2003536822

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 20028199154

Country of ref document: CN

Ref document number: 10491954

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 1020047005279

Country of ref document: KR

122 Ep: pct application non-entry in european phase