TWI308671B - - Google Patents

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Publication number
TWI308671B
TWI308671B TW091123333A TW91123333A TWI308671B TW I308671 B TWI308671 B TW I308671B TW 091123333 A TW091123333 A TW 091123333A TW 91123333 A TW91123333 A TW 91123333A TW I308671 B TWI308671 B TW I308671B
Authority
TW
Taiwan
Prior art keywords
formula
antireflection film
polymer
resin
substrate
Prior art date
Application number
TW091123333A
Other languages
English (en)
Chinese (zh)
Inventor
Satoshi Takei
Ken-Ichi Mizusawa
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Application granted granted Critical
Publication of TWI308671B publication Critical patent/TWI308671B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14—Polycondensates modified by chemical after-treatment
    • C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
    • C08G59/1438—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing oxygen
    • C08G59/1455—Monocarboxylic acids, anhydrides, halides, or low-molecular-weight esters thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/56—Polyhydroxyethers, e.g. phenoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
TW091123333A 2001-10-10 2002-10-09 TWI308671B (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001313089 2001-10-10

Publications (1)

Publication Number Publication Date
TWI308671B true TWI308671B (https=) 2009-04-11

Family

ID=19131637

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091123333A TWI308671B (https=) 2001-10-10 2002-10-09

Country Status (6)

Country Link
US (1) US7425347B2 (https=)
JP (1) JP3918942B2 (https=)
KR (1) KR100903153B1 (https=)
CN (1) CN1273870C (https=)
TW (1) TWI308671B (https=)
WO (1) WO2003034152A1 (https=)

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JP4798938B2 (ja) * 2003-04-11 2011-10-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジストシステム
JP4105036B2 (ja) * 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
WO2005036268A1 (ja) * 2003-10-14 2005-04-21 Asahi Denka Co., Ltd. フォトレジスト組成物
KR100586165B1 (ko) * 2003-12-30 2006-06-07 동부일렉트로닉스 주식회사 바닥 반사 방지 코팅 방법
JP2006133315A (ja) * 2004-11-02 2006-05-25 Matsushita Electric Ind Co Ltd 平坦化材料、反射防止膜形成材料、及びこれらを用いた半導体装置の製造方法
KR100643918B1 (ko) * 2004-12-21 2006-11-10 매그나칩 반도체 유한회사 유기 반사 방지막용 고분자 수지 및 유기 반사 방지막조성물, 및 이를 이용한 패턴 형성 방법
JP4539845B2 (ja) * 2005-03-17 2010-09-08 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
CN102621814A (zh) * 2005-04-19 2012-08-01 日产化学工业株式会社 用于形成光交联固化的抗蚀剂下层膜的抗蚀剂下层膜形成组合物
EP1876495B1 (en) * 2005-04-19 2011-07-20 Nissan Chemical Industries, Ltd. Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography
JP5062420B2 (ja) * 2005-05-24 2012-10-31 日産化学工業株式会社 ポリシラン化合物を含むリソグラフィー用下層膜形成組成物
TWI340607B (en) * 2005-08-12 2011-04-11 Au Optronics Corp Organic electroluminescent display panel and fabricating method thereof
WO2008047638A1 (en) * 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. Process for semiconductor device production using under-resist film cured by photocrosslinking
KR100876783B1 (ko) * 2007-01-05 2009-01-09 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
JP5447832B2 (ja) * 2007-02-27 2014-03-19 日産化学工業株式会社 電子線リソグラフィー用レジスト下層膜形成組成物
US20080286689A1 (en) * 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
JP4993139B2 (ja) 2007-09-28 2012-08-08 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
US8859673B2 (en) * 2008-02-25 2014-10-14 Honeywell International, Inc. Processable inorganic and organic polymer formulations, methods of production and uses thereof
JP2009276724A (ja) * 2008-05-19 2009-11-26 Nitto Denko Corp 光導波路装置の製造方法
KR101266291B1 (ko) * 2008-12-30 2013-05-22 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법
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JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
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Also Published As

Publication number Publication date
KR100903153B1 (ko) 2009-06-17
US7425347B2 (en) 2008-09-16
CN1273870C (zh) 2006-09-06
JP3918942B2 (ja) 2007-05-23
WO2003034152A1 (en) 2003-04-24
US20050008964A1 (en) 2005-01-13
JPWO2003034152A1 (ja) 2005-02-03
CN1564968A (zh) 2005-01-12
KR20050033528A (ko) 2005-04-12

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