WO2003034152A1 - Composition for forming antireflection film for lithography - Google Patents

Composition for forming antireflection film for lithography Download PDF

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Publication number
WO2003034152A1
WO2003034152A1 PCT/JP2002/010372 JP0210372W WO03034152A1 WO 2003034152 A1 WO2003034152 A1 WO 2003034152A1 JP 0210372 W JP0210372 W JP 0210372W WO 03034152 A1 WO03034152 A1 WO 03034152A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
antireflection film
lithography
weight
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/010372
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Satoshi Takei
Yoshiaki Yasumi
Ken-Ichi Mizusawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to US10/491,954 priority Critical patent/US7425347B2/en
Priority to JP2003536822A priority patent/JP3918942B2/ja
Publication of WO2003034152A1 publication Critical patent/WO2003034152A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14—Polycondensates modified by chemical after-treatment
    • C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
    • C08G59/1438—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing oxygen
    • C08G59/1455—Monocarboxylic acids, anhydrides, halides, or low-molecular-weight esters thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/56—Polyhydroxyethers, e.g. phenoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
PCT/JP2002/010372 2001-10-10 2002-10-04 Composition for forming antireflection film for lithography Ceased WO2003034152A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/491,954 US7425347B2 (en) 2001-10-10 2002-10-04 Composition for forming anti-reflective coating for use in lithography
JP2003536822A JP3918942B2 (ja) 2001-10-10 2002-10-04 リソグラフィー用反射防止膜形成組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-313089 2001-10-10
JP2001313089 2001-10-10

Publications (1)

Publication Number Publication Date
WO2003034152A1 true WO2003034152A1 (en) 2003-04-24

Family

ID=19131637

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/010372 Ceased WO2003034152A1 (en) 2001-10-10 2002-10-04 Composition for forming antireflection film for lithography

Country Status (6)

Country Link
US (1) US7425347B2 (https=)
JP (1) JP3918942B2 (https=)
KR (1) KR100903153B1 (https=)
CN (1) CN1273870C (https=)
TW (1) TWI308671B (https=)
WO (1) WO2003034152A1 (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
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JP2005106837A (ja) * 2003-04-11 2005-04-21 Rohm & Haas Electronic Materials Llc フォトレジストシステム
JP2006259249A (ja) * 2005-03-17 2006-09-28 Shin Etsu Chem Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
WO2008047638A1 (en) * 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. Process for semiconductor device production using under-resist film cured by photocrosslinking
JP2008172211A (ja) * 2007-01-05 2008-07-24 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法
WO2008105266A1 (ja) * 2007-02-27 2008-09-04 Nissan Chemical Industries, Ltd. 電子線リソグラフィー用レジスト下層膜形成組成物
JPWO2006115074A1 (ja) * 2005-04-19 2008-12-18 日産化学工業株式会社 エチレンジカルボニル構造を有するポリマーを含むリソグラフィー用反射防止膜形成組成物
JP2009098639A (ja) * 2007-09-28 2009-05-07 Shin Etsu Chem Co Ltd 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
CN1853138B (zh) * 2003-10-14 2011-06-15 株式会社Adeka 光致抗蚀剂组合物
JP2016028416A (ja) * 2014-07-04 2016-02-25 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ギャップ充填方法
WO2019054420A1 (ja) * 2017-09-13 2019-03-21 日産化学株式会社 硬化性官能基を有する化合物を含む段差基板被覆組成物

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JP4105036B2 (ja) * 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
KR100586165B1 (ko) * 2003-12-30 2006-06-07 동부일렉트로닉스 주식회사 바닥 반사 방지 코팅 방법
JP2006133315A (ja) * 2004-11-02 2006-05-25 Matsushita Electric Ind Co Ltd 平坦化材料、反射防止膜形成材料、及びこれらを用いた半導体装置の製造方法
KR100643918B1 (ko) * 2004-12-21 2006-11-10 매그나칩 반도체 유한회사 유기 반사 방지막용 고분자 수지 및 유기 반사 방지막조성물, 및 이를 이용한 패턴 형성 방법
CN102621814A (zh) * 2005-04-19 2012-08-01 日产化学工业株式会社 用于形成光交联固化的抗蚀剂下层膜的抗蚀剂下层膜形成组合物
JP5062420B2 (ja) * 2005-05-24 2012-10-31 日産化学工業株式会社 ポリシラン化合物を含むリソグラフィー用下層膜形成組成物
TWI340607B (en) * 2005-08-12 2011-04-11 Au Optronics Corp Organic electroluminescent display panel and fabricating method thereof
US20080286689A1 (en) * 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
US8859673B2 (en) * 2008-02-25 2014-10-14 Honeywell International, Inc. Processable inorganic and organic polymer formulations, methods of production and uses thereof
JP2009276724A (ja) * 2008-05-19 2009-11-26 Nitto Denko Corp 光導波路装置の製造方法
KR101266291B1 (ko) * 2008-12-30 2013-05-22 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법
KR101266290B1 (ko) * 2008-12-30 2013-05-22 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
JP5457955B2 (ja) * 2010-06-28 2014-04-02 富士フイルム株式会社 レーザー彫刻用樹脂組成物、レーザー彫刻用レリーフ印刷版原版、レーザー彫刻用レリーフ印刷版原版の製造方法、及び、レリーフ印刷版の製版方法
US9751974B2 (en) * 2013-09-06 2017-09-05 Honeywell Federal Manufacturing & Technologies, Llc Aminoanthracene—epoxy nanocomposite containing free anthracene
JP2015199916A (ja) * 2014-04-02 2015-11-12 Jsr株式会社 膜形成用組成物及びパターン形成方法
KR102156732B1 (ko) * 2014-04-25 2020-09-16 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물 및 이것을 이용한 레지스트 패턴의 형성방법
KR102460271B1 (ko) * 2015-04-03 2022-10-28 닛산 가가쿠 가부시키가이샤 광가교기를 가지는 단차 기판 피복 조성물
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
US20170370017A1 (en) * 2016-06-27 2017-12-28 Tel Nexx, Inc. Wet processing system and method of operating
US12436462B2 (en) * 2021-11-17 2025-10-07 Shin-Etsu Chemical Co., Ltd. Positive resist composition and pattern forming process
US20250333565A1 (en) * 2022-05-24 2025-10-30 Nissan Chemical Corporation Chemical-resistant protective film
KR20250016138A (ko) * 2022-05-24 2025-02-03 닛산 가가쿠 가부시키가이샤 약액내성 보호막

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JP2001022084A (ja) * 1999-05-06 2001-01-26 Tokyo Ohka Kogyo Co Ltd 微細パターン形成方法
JP2001040293A (ja) * 1999-08-03 2001-02-13 Jsr Corp 反射防止膜形成組成物
JP2001081203A (ja) * 1999-09-17 2001-03-27 Hitachi Chem Co Ltd 樹脂シート、金属はく張り積層板及び多層プリント配線板
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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005106837A (ja) * 2003-04-11 2005-04-21 Rohm & Haas Electronic Materials Llc フォトレジストシステム
CN1853138B (zh) * 2003-10-14 2011-06-15 株式会社Adeka 光致抗蚀剂组合物
JP2006259249A (ja) * 2005-03-17 2006-09-28 Shin Etsu Chem Co Ltd フォトレジスト下層膜形成材料及びパターン形成方法
JPWO2006115074A1 (ja) * 2005-04-19 2008-12-18 日産化学工業株式会社 エチレンジカルボニル構造を有するポリマーを含むリソグラフィー用反射防止膜形成組成物
WO2008047638A1 (en) * 2006-10-12 2008-04-24 Nissan Chemical Industries, Ltd. Process for semiconductor device production using under-resist film cured by photocrosslinking
US8227172B2 (en) 2006-10-12 2012-07-24 Nissan Chemical Industries, Ltd. Method of producing semiconductor device using resist underlayer film by photo-crosslinking curing
JP2008172211A (ja) * 2007-01-05 2008-07-24 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法
JPWO2008105266A1 (ja) * 2007-02-27 2010-06-03 日産化学工業株式会社 電子線リソグラフィー用レジスト下層膜形成組成物
WO2008105266A1 (ja) * 2007-02-27 2008-09-04 Nissan Chemical Industries, Ltd. 電子線リソグラフィー用レジスト下層膜形成組成物
US8603731B2 (en) 2007-02-27 2013-12-10 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition for electron beam lithography
JP2009098639A (ja) * 2007-09-28 2009-05-07 Shin Etsu Chem Co Ltd 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
KR101235504B1 (ko) 2007-09-28 2013-02-20 신에쓰 가가꾸 고교 가부시끼가이샤 반사 방지막 형성 재료, 반사 방지막 및 이를 이용한 패턴 형성 방법
JP2016028416A (ja) * 2014-07-04 2016-02-25 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ギャップ充填方法
WO2019054420A1 (ja) * 2017-09-13 2019-03-21 日産化学株式会社 硬化性官能基を有する化合物を含む段差基板被覆組成物
US11674051B2 (en) 2017-09-13 2023-06-13 Nissan Chemical Corporation Stepped substrate coating composition containing compound having curable functional group

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KR100903153B1 (ko) 2009-06-17
US7425347B2 (en) 2008-09-16
CN1273870C (zh) 2006-09-06
JP3918942B2 (ja) 2007-05-23
US20050008964A1 (en) 2005-01-13
JPWO2003034152A1 (ja) 2005-02-03
CN1564968A (zh) 2005-01-12
KR20050033528A (ko) 2005-04-12
TWI308671B (https=) 2009-04-11

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