CN1254867C - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN1254867C CN1254867C CNB021432813A CN02143281A CN1254867C CN 1254867 C CN1254867 C CN 1254867C CN B021432813 A CNB021432813 A CN B021432813A CN 02143281 A CN02143281 A CN 02143281A CN 1254867 C CN1254867 C CN 1254867C
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP290751/01 | 2001-09-25 | ||
JP290751/2001 | 2001-09-25 | ||
JP2001290751 | 2001-09-25 | ||
JP261011/2002 | 2002-09-06 | ||
JP261011/02 | 2002-09-06 | ||
JP2002261011A JP4171268B2 (ja) | 2001-09-25 | 2002-09-06 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1409408A CN1409408A (zh) | 2003-04-09 |
CN1254867C true CN1254867C (zh) | 2006-05-03 |
Family
ID=26622780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021432813A Expired - Fee Related CN1254867C (zh) | 2001-09-25 | 2002-09-25 | 半导体装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6828626B2 (ja) |
JP (1) | JP4171268B2 (ja) |
CN (1) | CN1254867C (ja) |
TW (1) | TWI269444B (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6812486B1 (en) * | 2003-02-20 | 2004-11-02 | National Semiconductor Corporation | Conductive structure and method of forming the structure |
US6861701B2 (en) * | 2003-03-05 | 2005-03-01 | Advanced Analogic Technologies, Inc. | Trench power MOSFET with planarized gate bus |
US7015104B1 (en) * | 2003-05-29 | 2006-03-21 | Third Dimension Semiconductor, Inc. | Technique for forming the deep doped columns in superjunction |
JP4398185B2 (ja) * | 2003-06-24 | 2010-01-13 | セイコーインスツル株式会社 | 縦形mosトランジスタ |
JP4749665B2 (ja) * | 2003-12-12 | 2011-08-17 | ローム株式会社 | 半導体装置 |
US6943409B1 (en) * | 2004-05-24 | 2005-09-13 | International Business Machines Corporation | Trench optical device |
US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
WO2005122235A2 (en) * | 2004-06-08 | 2005-12-22 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US7968273B2 (en) | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
US7354812B2 (en) * | 2004-09-01 | 2008-04-08 | Micron Technology, Inc. | Multiple-depth STI trenches in integrated circuit fabrication |
JP2006140372A (ja) * | 2004-11-15 | 2006-06-01 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
WO2006082618A1 (ja) * | 2005-01-31 | 2006-08-10 | Shindengen Electric Manufacturing Co., Ltd. | 半導体装置およびその製造方法 |
JP2007005657A (ja) | 2005-06-24 | 2007-01-11 | Nec Electronics Corp | 半導体装置及び半導体装置の製造方法 |
DE102005041108B3 (de) * | 2005-08-30 | 2007-05-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines Trench-Transistors und Trench-Transistor |
JP4609656B2 (ja) * | 2005-12-14 | 2011-01-12 | サンケン電気株式会社 | トレンチ構造半導体装置 |
JP2007208073A (ja) * | 2006-02-02 | 2007-08-16 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
US20070228463A1 (en) * | 2006-04-03 | 2007-10-04 | Jun Cai | Self-aligned complementary ldmos |
US7759731B2 (en) * | 2006-08-28 | 2010-07-20 | Advanced Analogic Technologies, Inc. | Lateral trench MOSFET with direct trench polysilicon contact and method of forming the same |
US7948031B2 (en) | 2007-07-03 | 2011-05-24 | Sanyo Electric Co., Ltd. | Semiconductor device and method of fabricating semiconductor device |
JP4882983B2 (ja) * | 2007-12-03 | 2012-02-22 | 富士電機株式会社 | 半導体装置 |
JP2009177221A (ja) * | 2009-05-15 | 2009-08-06 | Seiko Instruments Inc | 縦形mosトランジスタの製造方法 |
TWI414069B (zh) * | 2011-01-05 | 2013-11-01 | Anpec Electronics Corp | Power transistor with low interface of low Miller capacitor and its making method |
EP2688104B1 (en) * | 2011-03-15 | 2015-03-04 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
US8633539B2 (en) * | 2011-06-27 | 2014-01-21 | Infineon Technologies Austria Ag | Trench transistor and manufacturing method of the trench transistor |
JP5910855B2 (ja) * | 2011-12-19 | 2016-04-27 | サンケン電気株式会社 | 半導体装置の製造方法 |
JP6271155B2 (ja) | 2013-05-21 | 2018-01-31 | 株式会社東芝 | 半導体装置 |
KR20150069117A (ko) * | 2013-12-13 | 2015-06-23 | 삼성전기주식회사 | 전력 반도체 소자 |
JP2016143786A (ja) * | 2015-02-03 | 2016-08-08 | 株式会社東芝 | 半導体装置 |
JP6378220B2 (ja) * | 2016-02-01 | 2018-08-22 | 株式会社東芝 | 半導体装置 |
US9768084B1 (en) * | 2016-03-21 | 2017-09-19 | Globalfoundries Inc. | Inline monitoring of transistor-to-transistor critical dimension |
JP6869791B2 (ja) * | 2017-04-21 | 2021-05-12 | 三菱電機株式会社 | 半導体スイッチング素子及びその製造方法 |
CN109244129A (zh) * | 2018-11-09 | 2019-01-18 | 上海擎茂微电子科技有限公司 | 一种沟槽型绝缘栅双极型晶体管器件及制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4791462A (en) * | 1987-09-10 | 1988-12-13 | Siliconix Incorporated | Dense vertical j-MOS transistor |
JP2837033B2 (ja) | 1992-07-21 | 1998-12-14 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP3442154B2 (ja) | 1993-09-16 | 2003-09-02 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5538908A (en) * | 1995-04-27 | 1996-07-23 | Lg Semicon Co., Ltd. | Method for manufacturing a BiCMOS semiconductor device |
JP3168147B2 (ja) * | 1995-09-14 | 2001-05-21 | 株式会社日立製作所 | 半導体装置とそれを用いた3相インバータ |
US5851928A (en) * | 1995-11-27 | 1998-12-22 | Motorola, Inc. | Method of etching a semiconductor substrate |
JP3410286B2 (ja) | 1996-04-01 | 2003-05-26 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
DE19638438A1 (de) * | 1996-09-19 | 1998-04-02 | Siemens Ag | Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement |
US5721173A (en) * | 1997-02-25 | 1998-02-24 | Kabushiki Kaisha Toshiba | Method of forming a shallow trench isolation structure |
TW364179B (en) * | 1997-12-08 | 1999-07-11 | United Microelectronics Corp | A method for producing trench isolation |
JP3353818B2 (ja) * | 1998-03-26 | 2002-12-03 | 日本電気株式会社 | 電界放出型冷陰極装置 |
US6790742B2 (en) * | 1998-06-03 | 2004-09-14 | United Microelectronics Corporation | Chemical mechanical polishing in forming semiconductor device |
US6259135B1 (en) * | 1999-09-24 | 2001-07-10 | International Business Machines Corporation | MOS transistors structure for reducing the size of pitch limited circuits |
-
2002
- 2002-09-06 JP JP2002261011A patent/JP4171268B2/ja not_active Expired - Fee Related
- 2002-09-11 TW TW091120688A patent/TWI269444B/zh not_active IP Right Cessation
- 2002-09-25 CN CNB021432813A patent/CN1254867C/zh not_active Expired - Fee Related
- 2002-09-25 US US10/253,901 patent/US6828626B2/en not_active Expired - Lifetime
-
2004
- 2004-07-19 US US10/893,223 patent/US6967139B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1409408A (zh) | 2003-04-09 |
JP2003174166A (ja) | 2003-06-20 |
US6967139B2 (en) | 2005-11-22 |
US20040256667A1 (en) | 2004-12-23 |
US20030080379A1 (en) | 2003-05-01 |
TWI269444B (en) | 2006-12-21 |
JP4171268B2 (ja) | 2008-10-22 |
US6828626B2 (en) | 2004-12-07 |
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