CN1222016C - 通过激光退火和快速加温退火形成超浅结的方法 - Google Patents
通过激光退火和快速加温退火形成超浅结的方法 Download PDFInfo
- Publication number
- CN1222016C CN1222016C CNB018062164A CN01806216A CN1222016C CN 1222016 C CN1222016 C CN 1222016C CN B018062164 A CNB018062164 A CN B018062164A CN 01806216 A CN01806216 A CN 01806216A CN 1222016 C CN1222016 C CN 1222016C
- Authority
- CN
- China
- Prior art keywords
- wafer
- laser
- laser energy
- pulse
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005224 laser annealing Methods 0.000 title claims description 34
- 238000004151 rapid thermal annealing Methods 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000002019 doping agent Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 238000000137 annealing Methods 0.000 claims description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 abstract description 24
- 230000008439 repair process Effects 0.000 abstract description 4
- 230000004913 activation Effects 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 230000037230 mobility Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 77
- 150000002500 ions Chemical class 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 12
- 229910052796 boron Inorganic materials 0.000 description 12
- 230000004927 fusion Effects 0.000 description 12
- 239000007943 implant Substances 0.000 description 10
- 238000002513 implantation Methods 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 241000931526 Acer campestre Species 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19023300P | 2000-03-17 | 2000-03-17 | |
US60/190,233 | 2000-03-17 | ||
US63841000A | 2000-08-11 | 2000-08-11 | |
US09/638,410 | 2000-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1419708A CN1419708A (zh) | 2003-05-21 |
CN1222016C true CN1222016C (zh) | 2005-10-05 |
Family
ID=26885893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018062164A Expired - Fee Related CN1222016C (zh) | 2000-03-17 | 2001-03-15 | 通过激光退火和快速加温退火形成超浅结的方法 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1264335A1 (de) |
JP (1) | JP4942128B2 (de) |
KR (1) | KR100839259B1 (de) |
CN (1) | CN1222016C (de) |
TW (1) | TWI271791B (de) |
WO (1) | WO2001071787A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106856159A (zh) * | 2015-12-08 | 2017-06-16 | 英飞凌科技股份有限公司 | 用于离子注入的装置和方法 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7026229B2 (en) * | 2001-11-28 | 2006-04-11 | Vartan Semiconductor Equipment Associates, Inc. | Athermal annealing with rapid thermal annealing system and method |
US20030186519A1 (en) * | 2002-04-01 | 2003-10-02 | Downey Daniel F. | Dopant diffusion and activation control with athermal annealing |
US6878415B2 (en) * | 2002-04-15 | 2005-04-12 | Varian Semiconductor Equipment Associates, Inc. | Methods for chemical formation of thin film layers using short-time thermal processes |
US7135423B2 (en) * | 2002-05-09 | 2006-11-14 | Varian Semiconductor Equipment Associates, Inc | Methods for forming low resistivity, ultrashallow junctions with low damage |
WO2004075274A1 (ja) | 2003-02-19 | 2004-09-02 | Matsushita Electric Industrial Co., Ltd. | 不純物導入方法 |
US20040235281A1 (en) * | 2003-04-25 | 2004-11-25 | Downey Daniel F. | Apparatus and methods for junction formation using optical illumination |
WO2005020306A1 (ja) | 2003-08-25 | 2005-03-03 | Matsushita Electric Industrial Co., Ltd. | 不純物導入層の形成方法及び被処理物の洗浄方法並びに不純物導入装置及びデバイスの製造方法 |
WO2005036626A1 (ja) * | 2003-10-09 | 2005-04-21 | Matsushita Electric Industrial Co., Ltd. | 接合の形成方法およびこれを用いて形成された被処理物 |
US7132338B2 (en) | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
JP2005142344A (ja) | 2003-11-06 | 2005-06-02 | Toshiba Corp | 半導体装置の製造方法および半導体製造装置 |
US7078302B2 (en) * | 2004-02-23 | 2006-07-18 | Applied Materials, Inc. | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal |
JPWO2005112088A1 (ja) | 2004-05-14 | 2008-03-27 | 松下電器産業株式会社 | 半導体装置の製造方法および製造装置 |
US7834422B2 (en) * | 2004-05-18 | 2010-11-16 | Qucor Pty. Ltd. | Implanted counted dopant ions |
JP4614747B2 (ja) * | 2004-11-30 | 2011-01-19 | 住友重機械工業株式会社 | 半導体装置の製造方法 |
JP2006245338A (ja) * | 2005-03-03 | 2006-09-14 | Nec Electronics Corp | 電界効果型トランジスタの製造方法 |
JP5283827B2 (ja) * | 2006-03-30 | 2013-09-04 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
DE102006053182B4 (de) * | 2006-11-09 | 2015-01-15 | Infineon Technologies Ag | Verfahren zur p-Dotierung von Silizium |
JP2008251839A (ja) * | 2007-03-30 | 2008-10-16 | Ihi Corp | レーザアニール方法及びレーザアニール装置 |
JP5178046B2 (ja) * | 2007-05-01 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPWO2009034699A1 (ja) * | 2007-09-10 | 2010-12-24 | パナソニック株式会社 | 半導体装置の製造方法 |
US9498845B2 (en) | 2007-11-08 | 2016-11-22 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
US20090120924A1 (en) * | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
US8603902B2 (en) * | 2008-01-31 | 2013-12-10 | President And Fellows Of Harvard College | Engineering flat surfaces on materials doped via pulsed laser irradiation |
JP5346484B2 (ja) | 2008-04-16 | 2013-11-20 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
JP2009302373A (ja) * | 2008-06-16 | 2009-12-24 | Nec Electronics Corp | 半導体装置の製造方法 |
JP2010212530A (ja) * | 2009-03-12 | 2010-09-24 | Fuji Electric Systems Co Ltd | 半導体素子の製造方法 |
JP5556431B2 (ja) | 2010-06-24 | 2014-07-23 | 富士電機株式会社 | 半導体装置の製造方法 |
TW201310551A (zh) * | 2011-07-29 | 2013-03-01 | Applied Materials Inc | 熱處理基材的方法 |
JP5661009B2 (ja) * | 2011-09-08 | 2015-01-28 | 住友重機械工業株式会社 | 半導体装置の製造方法 |
US9558973B2 (en) | 2012-06-11 | 2017-01-31 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
SG10201503482QA (en) | 2012-06-11 | 2015-06-29 | Ultratech Inc | Laser annealing systems and methods with ultra-short dwell times |
CN103835000A (zh) * | 2012-11-20 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | 一种高温改善多晶硅表面粗糙度的方法 |
JP5718975B2 (ja) * | 2013-05-23 | 2015-05-13 | 株式会社Screenホールディングス | 熱処理方法 |
US20150111341A1 (en) * | 2013-10-23 | 2015-04-23 | Qualcomm Incorporated | LASER ANNEALING METHODS FOR INTEGRATED CIRCUITS (ICs) |
US10083843B2 (en) | 2014-12-17 | 2018-09-25 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
JP6587818B2 (ja) * | 2015-03-26 | 2019-10-09 | 株式会社Screenホールディングス | 熱処理方法 |
US9859121B2 (en) | 2015-06-29 | 2018-01-02 | International Business Machines Corporation | Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure |
CN111599670A (zh) * | 2019-02-20 | 2020-08-28 | 创能动力科技有限公司 | 晶片加工方法及半导体装置 |
CN110752159B (zh) * | 2019-10-28 | 2023-08-29 | 中国科学技术大学 | 对氧化镓材料退火的方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3190653B2 (ja) * | 1989-05-09 | 2001-07-23 | ソニー株式会社 | アニール方法およびアニール装置 |
JP2821628B2 (ja) * | 1989-11-10 | 1998-11-05 | ソニー株式会社 | 半導体装置の製造方法 |
JP3185386B2 (ja) * | 1992-07-31 | 2001-07-09 | ソニー株式会社 | 半導体装置の製造方法 |
JP3211394B2 (ja) * | 1992-08-13 | 2001-09-25 | ソニー株式会社 | 半導体装置の製造方法 |
KR100231607B1 (ko) * | 1996-12-31 | 1999-11-15 | 김영환 | 반도체 소자의 초저접합 형성방법 |
US5966605A (en) * | 1997-11-07 | 1999-10-12 | Advanced Micro Devices, Inc. | Reduction of poly depletion in semiconductor integrated circuits |
US6087247A (en) * | 1998-01-29 | 2000-07-11 | Varian Semiconductor Equipment Associates, Inc. | Method for forming shallow junctions in semiconductor wafers using controlled, low level oxygen ambients during annealing |
-
2001
- 2001-03-15 EP EP01916675A patent/EP1264335A1/de not_active Withdrawn
- 2001-03-15 CN CNB018062164A patent/CN1222016C/zh not_active Expired - Fee Related
- 2001-03-15 WO PCT/US2001/008241 patent/WO2001071787A1/en not_active Application Discontinuation
- 2001-03-15 JP JP2001569868A patent/JP4942128B2/ja not_active Expired - Fee Related
- 2001-03-15 KR KR1020027012179A patent/KR100839259B1/ko not_active IP Right Cessation
- 2001-03-19 TW TW090106353A patent/TWI271791B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106856159A (zh) * | 2015-12-08 | 2017-06-16 | 英飞凌科技股份有限公司 | 用于离子注入的装置和方法 |
US10622268B2 (en) | 2015-12-08 | 2020-04-14 | Infineon Technologies Ag | Apparatus and method for ion implantation |
Also Published As
Publication number | Publication date |
---|---|
KR20030066318A (ko) | 2003-08-09 |
JP4942128B2 (ja) | 2012-05-30 |
CN1419708A (zh) | 2003-05-21 |
WO2001071787A1 (en) | 2001-09-27 |
KR100839259B1 (ko) | 2008-06-17 |
TWI271791B (en) | 2007-01-21 |
EP1264335A1 (de) | 2002-12-11 |
JP2003528462A (ja) | 2003-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1222016C (zh) | 通过激光退火和快速加温退火形成超浅结的方法 | |
KR101081130B1 (ko) | 낮은 고유저항을 갖는 극히 얕은 접합을 적은 손상으로 형성하는 방법 | |
US8067302B2 (en) | Defect-free junction formation using laser melt annealing of octadecaborane self-amorphizing implants | |
US4151008A (en) | Method involving pulsed light processing of semiconductor devices | |
KR100582484B1 (ko) | 크기가 축소된 집적 회로의 제조에 사용하기에 적합한가스 주입 레이저 어닐링 방법 | |
US6051483A (en) | Formation of ultra-shallow semiconductor junction using microwave annealing | |
JP4166298B2 (ja) | 化学元素の受容材料中への導入方法 | |
US6013566A (en) | Method of forming a doped region in a semiconductor substrate | |
KR20040054811A (ko) | 반도체 디바이스 및 그 제조 방법 | |
US5565377A (en) | Process for forming retrograde profiles in silicon | |
US7105427B1 (en) | Method for shallow dopant distribution | |
KR102478873B1 (ko) | 디이프 접합 전자 소자 및 그의 제조 공정 | |
Gelpey et al. | Advanced annealing for sub-130nm junction formation | |
US6762136B1 (en) | Method for rapid thermal processing of substrates | |
US6952269B2 (en) | Apparatus and method for adiabatically heating a semiconductor surface | |
Pokhmurska et al. | Laser doping in Si, InP and GaAs | |
US8815719B2 (en) | Defect-free junction formation using octadecaborane self-amorphizing implants | |
Fortunato et al. | Excimer Laser annealing for shallow junction formation in Si power MOS devices | |
Fortunato et al. | Fabrication of ultra-shallow junctions with high electrical activation by excimer laser annealing | |
US11195732B2 (en) | Low thermal budget annealing | |
JP2012044121A (ja) | 半導体デバイスの製造方法および製造装置 | |
WO2001035041A9 (en) | Method for rapid thermal processing of substrates | |
JP2004158621A (ja) | ドーピング方法およびその装置 | |
Laviron et al. | Excimer-laser activation of dopants in silicon: a new concept for a uniform treatment over a whole die area | |
GB2087641A (en) | Semiconductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CI01 | Correction of invention patent gazette |
Correction item: Inventor Correct: Carol a. M False: Carol M Gelazhasi Number: 40 Page: 896 Volume: 21 |
|
CI03 | Correction of invention patent |
Correction item: Inventor Correct: Carol a. M False: Carol M Gelazhasi Number: 40 Page: The title page Volume: 21 |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: CLAUDIO L.K LAISI TO: CLARE MARY AOLUOER SEURAT |
|
ERR | Gazette correction |
Free format text: CORRECT: INVENTOR; FROM: CLAUDIO L.K LAISI TO: CLARE MARY AOLUOER SEURAT |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20051005 Termination date: 20140315 |