CN1208840C - 有源矩阵基片、显示装置及制造有源矩阵基片的方法 - Google Patents
有源矩阵基片、显示装置及制造有源矩阵基片的方法 Download PDFInfo
- Publication number
- CN1208840C CN1208840C CNB011228288A CN01122828A CN1208840C CN 1208840 C CN1208840 C CN 1208840C CN B011228288 A CNB011228288 A CN B011228288A CN 01122828 A CN01122828 A CN 01122828A CN 1208840 C CN1208840 C CN 1208840C
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- Prior art keywords
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Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 239000011159 matrix material Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title abstract description 22
- 239000010408 film Substances 0.000 claims description 162
- 239000010410 layer Substances 0.000 claims description 37
- 239000004973 liquid crystal related substance Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 41
- 238000000034 method Methods 0.000 abstract description 33
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 8
- 238000000059 patterning Methods 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000005530 etching Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910001182 Mo alloy Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007850 degeneration Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000004224 protection Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910015202 MoCr Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical group [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- -1 whisker Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000208593A JP3516441B2 (ja) | 2000-07-10 | 2000-07-10 | アクティブマトリックス基板、表示装置、およびアクティブマトリックス基板の製造方法 |
JP208593/2000 | 2000-07-10 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101030052A Division CN100499084C (zh) | 2000-07-10 | 2001-07-09 | 有源矩阵基片、显示装置及制造有源矩阵基片的方法 |
CNB2004100545599A Division CN100498481C (zh) | 2000-07-10 | 2001-07-09 | 有源矩阵基片、显示装置及制造有源矩阵基片的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1332479A CN1332479A (zh) | 2002-01-23 |
CN1208840C true CN1208840C (zh) | 2005-06-29 |
Family
ID=18705150
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011228288A Expired - Lifetime CN1208840C (zh) | 2000-07-10 | 2001-07-09 | 有源矩阵基片、显示装置及制造有源矩阵基片的方法 |
CNB2004100545599A Expired - Lifetime CN100498481C (zh) | 2000-07-10 | 2001-07-09 | 有源矩阵基片、显示装置及制造有源矩阵基片的方法 |
CNB2006101030052A Expired - Lifetime CN100499084C (zh) | 2000-07-10 | 2001-07-09 | 有源矩阵基片、显示装置及制造有源矩阵基片的方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100545599A Expired - Lifetime CN100498481C (zh) | 2000-07-10 | 2001-07-09 | 有源矩阵基片、显示装置及制造有源矩阵基片的方法 |
CNB2006101030052A Expired - Lifetime CN100499084C (zh) | 2000-07-10 | 2001-07-09 | 有源矩阵基片、显示装置及制造有源矩阵基片的方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6707513B2 (zh) |
JP (1) | JP3516441B2 (zh) |
KR (1) | KR100443804B1 (zh) |
CN (3) | CN1208840C (zh) |
TW (1) | TW511294B (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100878790B1 (ko) | 2002-09-05 | 2009-01-14 | 삼성전자주식회사 | 액티브 매트릭스 방식의 화상 표시 장치 및 이를 이용한화상 표시 방법 |
JP4403354B2 (ja) * | 2002-09-11 | 2010-01-27 | ソニー株式会社 | 薄膜回路基板 |
KR100872494B1 (ko) * | 2002-12-31 | 2008-12-05 | 엘지디스플레이 주식회사 | 액정 표시 장치용 어레이 기판의 제조 방법 |
KR101115291B1 (ko) * | 2003-04-25 | 2012-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액적 토출 장치, 패턴의 형성 방법, 및 반도체 장치의 제조 방법 |
JP4916653B2 (ja) * | 2003-10-28 | 2012-04-18 | 株式会社半導体エネルギー研究所 | 配線基板の作製方法及び半導体装置の作製方法 |
US8263983B2 (en) | 2003-10-28 | 2012-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Wiring substrate and semiconductor device |
JP2005286320A (ja) * | 2004-03-04 | 2005-10-13 | Semiconductor Energy Lab Co Ltd | パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置 |
JP5116212B2 (ja) * | 2004-03-19 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
JP5057652B2 (ja) * | 2004-03-24 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US7642038B2 (en) * | 2004-03-24 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus |
CN1308749C (zh) * | 2004-09-28 | 2007-04-04 | 友达光电股份有限公司 | 平面显示面板的制造方法 |
US7427776B2 (en) * | 2004-10-07 | 2008-09-23 | Hewlett-Packard Development Company, L.P. | Thin-film transistor and methods |
KR20070049742A (ko) * | 2005-11-09 | 2007-05-14 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
KR101363714B1 (ko) * | 2006-12-11 | 2014-02-14 | 엘지디스플레이 주식회사 | 유기 박막트랜지스터, 그 제조 방법, 이를 이용한 정전기방지 소자, 액정표시장치 및 그 제조 방법 |
JP5131525B2 (ja) * | 2007-11-16 | 2013-01-30 | Nltテクノロジー株式会社 | アクティブマトリクス型液晶表示装置 |
KR101490485B1 (ko) * | 2008-10-30 | 2015-02-05 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
JP2009234912A (ja) * | 2009-07-16 | 2009-10-15 | Murata Mfg Co Ltd | 多層セラミック基板の製造方法 |
JP5428891B2 (ja) * | 2010-01-21 | 2014-02-26 | 富士ゼロックス株式会社 | 測長装置および画像形成装置 |
JP5810810B2 (ja) * | 2011-10-04 | 2015-11-11 | 大日本印刷株式会社 | トップゲート型アクティブマトリックス基板、およびその製造方法 |
CN102629611B (zh) * | 2012-03-29 | 2015-01-21 | 京东方科技集团股份有限公司 | 一种显示装置、阵列基板及其制作方法 |
CN103035653A (zh) * | 2012-10-10 | 2013-04-10 | 深圳市华星光电技术有限公司 | 薄膜晶体管像素结构及其制作方法 |
KR102188029B1 (ko) * | 2013-09-24 | 2020-12-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 장치의 제조 방법 |
KR20170087574A (ko) * | 2016-01-20 | 2017-07-31 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
CN108922966A (zh) * | 2018-06-19 | 2018-11-30 | 信利半导体有限公司 | 一种有机薄膜晶体管及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61161764A (ja) * | 1985-01-11 | 1986-07-22 | Nec Corp | 薄膜トランジスタの製造方法 |
JPH0797639B2 (ja) * | 1985-02-15 | 1995-10-18 | シャープ株式会社 | 表示パネル基板 |
JP2873119B2 (ja) * | 1991-10-23 | 1999-03-24 | 京セラ株式会社 | アクティブマトリックス基板の製造方法 |
KR0139346B1 (ko) * | 1994-03-03 | 1998-06-15 | 김광호 | 박막 트랜지스터 액정표시장치의 제조방법 |
JP3225772B2 (ja) * | 1995-01-30 | 2001-11-05 | 株式会社日立製作所 | 液晶表示装置の製造方法 |
JP3625598B2 (ja) * | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP2798066B2 (ja) * | 1996-08-05 | 1998-09-17 | 日本電気株式会社 | 薄膜トランジスター、その製造方法および表示装置 |
-
2000
- 2000-07-10 JP JP2000208593A patent/JP3516441B2/ja not_active Expired - Lifetime
-
2001
- 2001-06-29 TW TW090115992A patent/TW511294B/zh not_active IP Right Cessation
- 2001-07-06 KR KR10-2001-0040547A patent/KR100443804B1/ko active IP Right Grant
- 2001-07-06 US US09/682,002 patent/US6707513B2/en not_active Expired - Lifetime
- 2001-07-09 CN CNB011228288A patent/CN1208840C/zh not_active Expired - Lifetime
- 2001-07-09 CN CNB2004100545599A patent/CN100498481C/zh not_active Expired - Lifetime
- 2001-07-09 CN CNB2006101030052A patent/CN100499084C/zh not_active Expired - Lifetime
-
2004
- 2004-02-24 US US10/786,925 patent/US6859252B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020003587A1 (en) | 2002-01-10 |
CN1332479A (zh) | 2002-01-23 |
JP3516441B2 (ja) | 2004-04-05 |
TW511294B (en) | 2002-11-21 |
CN1554975A (zh) | 2004-12-15 |
CN100498481C (zh) | 2009-06-10 |
CN100499084C (zh) | 2009-06-10 |
US20040165121A1 (en) | 2004-08-26 |
CN101026130A (zh) | 2007-08-29 |
KR20020005968A (ko) | 2002-01-18 |
JP2002043575A (ja) | 2002-02-08 |
KR100443804B1 (ko) | 2004-08-09 |
US6707513B2 (en) | 2004-03-16 |
US6859252B2 (en) | 2005-02-22 |
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GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: YOUDA PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINE CORP. Effective date: 20060707 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20060707 Address after: Taiwan, China Hsinchu science and Technology Park, Hsinchu City Road, No. two Patentee after: AU Optronics Corporation Address before: American New York Patentee before: International Business Machines Corp. |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20050629 |