CN1815321A - 液晶显示装置用下基板的制造方法 - Google Patents
液晶显示装置用下基板的制造方法 Download PDFInfo
- Publication number
- CN1815321A CN1815321A CN 200610058617 CN200610058617A CN1815321A CN 1815321 A CN1815321 A CN 1815321A CN 200610058617 CN200610058617 CN 200610058617 CN 200610058617 A CN200610058617 A CN 200610058617A CN 1815321 A CN1815321 A CN 1815321A
- Authority
- CN
- China
- Prior art keywords
- layer
- base plate
- liquid crystal
- display device
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 88
- 239000002184 metal Substances 0.000 claims abstract description 88
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 238000009413 insulation Methods 0.000 claims description 43
- 238000000059 patterning Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical group [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 abstract description 26
- 230000000873 masking effect Effects 0.000 abstract description 4
- 230000003628 erosive effect Effects 0.000 description 23
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- -1 evanohm Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910004304 SiNy Inorganic materials 0.000 description 1
- 229910010421 TiNx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100586174A CN100386674C (zh) | 2006-03-02 | 2006-03-02 | 液晶显示装置用下基板的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100586174A CN100386674C (zh) | 2006-03-02 | 2006-03-02 | 液晶显示装置用下基板的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1815321A true CN1815321A (zh) | 2006-08-09 |
CN100386674C CN100386674C (zh) | 2008-05-07 |
Family
ID=36907584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100586174A Expired - Fee Related CN100386674C (zh) | 2006-03-02 | 2006-03-02 | 液晶显示装置用下基板的制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100386674C (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102830836A (zh) * | 2012-07-27 | 2012-12-19 | 北京京东方光电科技有限公司 | 一种触控面板及其制造方法、触控设备 |
CN103887234A (zh) * | 2012-12-20 | 2014-06-25 | 北京京东方光电科技有限公司 | 一种tft阵列基板及其制造方法 |
WO2015192432A1 (zh) * | 2014-06-18 | 2015-12-23 | 深圳市华星光电技术有限公司 | 基板检测用定位图形及其制造方法 |
CN105826249A (zh) * | 2016-04-11 | 2016-08-03 | 京东方科技集团股份有限公司 | 金属层制作方法、功能基板及其制作方法、以及显示装置 |
US9423247B2 (en) | 2014-06-18 | 2016-08-23 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Positioning graphic component for substrate detection and method of manufacturing the same |
WO2017156810A1 (zh) * | 2016-03-17 | 2017-09-21 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列面板及其制作方法 |
CN108064418A (zh) * | 2016-12-27 | 2018-05-22 | 深圳市柔宇科技有限公司 | 阵列基板及阵列基板的制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1033252C (zh) * | 1992-12-29 | 1996-11-06 | 株式会社金星社 | 制造薄膜晶体管的方法 |
JP3208658B2 (ja) * | 1997-03-27 | 2001-09-17 | 株式会社アドバンスト・ディスプレイ | 電気光学素子の製法 |
TWI236557B (en) * | 2000-09-29 | 2005-07-21 | Au Optronics Corp | TFT LCD and method of making the same |
KR100560398B1 (ko) * | 2003-10-30 | 2006-03-14 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판의 제조방법 |
CN100337316C (zh) * | 2004-03-20 | 2007-09-12 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管及其制造方法 |
-
2006
- 2006-03-02 CN CNB2006100586174A patent/CN100386674C/zh not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102830836A (zh) * | 2012-07-27 | 2012-12-19 | 北京京东方光电科技有限公司 | 一种触控面板及其制造方法、触控设备 |
CN103887234A (zh) * | 2012-12-20 | 2014-06-25 | 北京京东方光电科技有限公司 | 一种tft阵列基板及其制造方法 |
WO2015192432A1 (zh) * | 2014-06-18 | 2015-12-23 | 深圳市华星光电技术有限公司 | 基板检测用定位图形及其制造方法 |
US9423247B2 (en) | 2014-06-18 | 2016-08-23 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Positioning graphic component for substrate detection and method of manufacturing the same |
WO2017156810A1 (zh) * | 2016-03-17 | 2017-09-21 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列面板及其制作方法 |
CN105826249A (zh) * | 2016-04-11 | 2016-08-03 | 京东方科技集团股份有限公司 | 金属层制作方法、功能基板及其制作方法、以及显示装置 |
US10209584B2 (en) | 2016-04-11 | 2019-02-19 | Boe Technology Group Co., Ltd. | Manufacturing method of metal layer, functional substrate and manufacturing method thereof, and display device |
CN108064418A (zh) * | 2016-12-27 | 2018-05-22 | 深圳市柔宇科技有限公司 | 阵列基板及阵列基板的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100386674C (zh) | 2008-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101552242B (zh) | 薄膜晶体管阵列面板及其制造方法 | |
CN101226901B (zh) | 薄膜晶体管、薄膜晶体管基板及其制造方法 | |
CN1309034C (zh) | 底栅控制型多晶硅薄膜晶体管的制造方法 | |
EP2743982A2 (en) | Display device, array substrate and manufacturing method thereof | |
CN102709234B (zh) | 薄膜晶体管阵列基板及其制造方法和电子器件 | |
CN1897285A (zh) | 薄膜晶体管阵列面板及制造方法 | |
CN101000896A (zh) | 像素结构及其制造方法 | |
CN1815321A (zh) | 液晶显示装置用下基板的制造方法 | |
CN1790160A (zh) | 掩模和半导体装置的制造方法以及薄膜晶体管阵列面板 | |
CN1885511A (zh) | 薄膜晶体管基板及其制造方法 | |
CN103227148B (zh) | 一种阵列基板制备方法及阵列基板和显示装置 | |
CN1767175A (zh) | 薄膜晶体管阵列面板的制造方法 | |
CN1554975A (zh) | 有源矩阵基片、显示装置及制造有源矩阵基片的方法 | |
WO2021077673A1 (zh) | 阵列基板的制作方法及阵列基板 | |
JP4808654B2 (ja) | アレイ回路基板の製造方法 | |
CN1892373A (zh) | 薄膜晶体管基板及其制造方法 | |
CN1893096A (zh) | 薄膜晶体管阵列面板及其制造方法 | |
CN1834790A (zh) | 利用三道掩膜制造液晶显示装置用下基板的方法 | |
CN101038925A (zh) | 薄膜晶体管面板及其制造方法 | |
CN1740882A (zh) | 液晶显示器的阵列基板及其制造方法 | |
KR20070085134A (ko) | 액정 표시 장치의 바닥기판 제조방법 | |
CN101645423A (zh) | 薄膜晶体管基板及其制造方法 | |
CN101364572B (zh) | 薄膜晶体管基板制造方法 | |
CN1154174C (zh) | 平面显示器制造方法 | |
CN100342279C (zh) | 用于液晶显示器件的基板及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: YOUDA PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: GUANGHUI ELECTRONIC CO., LTD. Effective date: 20071130 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071130 Address after: Hsinchu city of Taiwan Province Applicant after: AU OPTRONICS Corp. Address before: Taoyuan County of Taiwan Province Applicant before: QUANTA DISPLAY INCORPORATION |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080507 |