CN101226901B - 薄膜晶体管、薄膜晶体管基板及其制造方法 - Google Patents

薄膜晶体管、薄膜晶体管基板及其制造方法 Download PDF

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CN101226901B
CN101226901B CN200710300775.0A CN200710300775A CN101226901B CN 101226901 B CN101226901 B CN 101226901B CN 200710300775 A CN200710300775 A CN 200710300775A CN 101226901 B CN101226901 B CN 101226901B
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electrode
conductive layer
gate
oxide semiconductor
film transistor
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CN101226901A (zh
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李殷国
金度贤
郑敞午
李制勋
林淳权
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Samsung Display Co Ltd
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Abstract

本发明涉及一种薄膜晶体管基板及其制造方法。制造薄膜晶体管基板的方法包括在基板上形成包括栅极线、栅电极和下部栅极垫片电极的第一导电图形组，在其上形成有该第一导电图形组的基板上形成栅极绝缘层，在该栅极绝缘层上形成与该栅电极重叠的氧化物半导体图形，以及在其上形成有该氧化物半导体图形的基板上形成第一导电层和第二导电层，并且图形化该第一导电层和第二导电层以形成第二导电图形组，其包括数据线、源电极、漏电极和数据垫片。

Description

薄膜晶体管、薄膜晶体管基板及其制造方法
技术领域
本发明涉及一种薄膜晶体管，一种薄膜晶体管基板和制造其的一种简化的方法，该方法提供了一种具有高分辨率的液晶显示器件。
背景技术
液晶显示(“LCD”)器件通过使用电场调节介电各向异性的液晶的光透射率来显示图像。LCD器件包括LCD面板和用于驱动LCD面板的驱动电路，LCD面板具有以有源矩阵的形式取向的液晶。
LCD面板包括滤光器基板和通过密封胶与滤光器基板粘合的薄膜晶体管基板，滤光器基板和薄膜晶体管基板之间安置有液晶。
滤光器基板通常包括堆叠在绝缘基板上的黑矩阵、滤光器和公共电极。
薄膜晶体管基板包括设置为在下部绝缘基板上相互交叉的栅极线和数据线以及将像素电极与栅极线和数据线连接的薄膜晶体管(“TFT”)。响应于来自栅极线的扫描信号，TFT将数据信号从数据线供应到像素电极。TFT通常使用非晶硅、多晶硅或者氧化锌基物质作为有源层。使用非晶硅的TFT可以在低温下制造，其具有低迁移率并且不能符合恒定电流的条件。使用多晶硅的TFT具有高迁移率并且符合恒定电流的条件。然而，使用多晶硅的TFT由于其均匀性差而难以实现大尺度并且需要高温工艺。另一方面，包括氧化锌基半导体层的TFT可以通过低温工艺生产并且具有适当的迁移率，满足恒定电流的条件。
然而，包括氧化物半导体层的TFT使用ITO(铟锡氧化物)、金等的透明电极作为源/漏电极。当源/漏电极由该透明电极形成并且覆盖大片区域时，电阻的上升带来了相当大的信号延迟。
此外，当源/漏电极用金形成时，提高了材料的成本。
发明内容
本发明提供了一种薄膜晶体管、一种薄膜晶体管基板及其制造方法，其可以提供高分辨率和大尺寸并且可以简化生产工艺。
在一个典型实施例中，制造薄膜晶体管基板的方法包括在基板上形成包括栅极线、栅电极和下部栅极垫片电极的第一导电图形组，在其上形成有该第一导电图形组的该基板上形成栅极绝缘层，在该栅极绝缘层上形成与该栅电极重叠的氧化物半导体图形，以及在其上形成有该氧化物半导体图形的基板上形成第一导电层和第二导电层并且使得该第一导电层和第二导电层图形化以形成第二导电图形组，其包括数据线、源电极、漏电极和数据垫片。
在另一个典型实施例中，薄膜晶体管基板包括形成在基板上的栅极线和栅电极，形成在该栅极线和该栅电极上的栅极绝缘层，在栅极绝缘层上与该栅电极重叠的氧化物半导体层，在该氧化物半导体层和该栅极绝缘层上由第一导电层和第二导电层形成的数据线、源电极和漏电极，以及连接到该漏电极并且由该第一导电层形成的像素电极。
在另一个典型实施例中，薄膜晶体管包括栅电极，形成在该栅电极上的栅极绝缘层，在栅极绝缘层上与该栅电极重叠的氧化物半导体层，以及在该氧化物半导体层上由第一导电层和第二导电层形成的源电极和漏电极。
附图说明
附图被包括为提供该发明的进一步理解并且被引入和组成该申请的一部分，其图示了该发明的实施例并且与描述一起用来解释该发明，在图中：
图1是根据本发明一个实施例的TFT基板的平面图；
图2A、2B和2C是图1中的分别截自线I-I’、II-II’和III-III’的该TFT基板的截面图；
图3是包含栅电极102的栅极线104的平面图，且图4A、4B和4C是解释用制造图1中的TFT基板的方法形成第一导电图形组的截面图；
图5是表示栅极线104、栅电极102和氧化物半导体层123的平面图，且图6A、6B和6C是用于解释以制造图1中的该TFT基板的方法形成栅极绝缘层和氧化物半导体图形的截面图；
图7A、7B、7C、8A、8B、8C、9A、9B、9C、10A、10B、10C、11A、11B和11C是用于详细地解释制造图6A、6B和6C中示出的TFT基板的方法的截面图；
图12是本发明的一个实施例的平面图，且图13A、13B和13C是用于解释以制造图1中的TFT基板的方法形成第二导电图形组的截面图；
图14A、14B、14C、15A、15B、15C、16A、16B、16C、17A、17B和17C是用于详细地解释制造图13A、13B和13C所示的TFT基板的方法的截面图；并且
图18是本发明的一个实施例的平面图且图19A、19B和19C是用于解释以制造图1中的TFT基板的方法形成柱状间隔物的截面图。
具体实施方式
参考附图详细地描述本发明的典型实施例。在图中使用的同样的附图标记表示同样或类似的部分。为了防止使本发明的主题不明确而省略了对在此引入的公知的功能和结构的详细描述。
本发明可以以多种不同的形式实施。在图中示出了该发明的特定实施例并且在此详细地描述，且应该认为当前公开不将本发明限制在图示的特定实施例中。
图1是根据本发明一个实施例的TFT基板的平面图，且图2A、2B和2C是图1中的分别截自线I-I’、II-II’和III-III’的TFT基板的截面图。
参照图1、2A、2B和2C，根据本发明的一个实施例的TFT基板包括栅；极线和数据线104和124，其在下部基板101上相互交叉且在其间布置有栅极绝缘层108。TFT 130形成在各个栅极线104和数据线124的交叉点上。像素电极122形成在交叉点的子像素区域中且连接到TFT 130、栅极垫片150和数据垫片160，该栅极垫片150连接到栅极线104，该数据垫片160连接到数据线124。
TFT 130能够响应于栅极线104的扫描信号由供应给数据线124的像素信号对像素电极充电。TFT 130包括连接到栅极线104的栅电极102、连接到数据线124的源电极126、连接到像素电极122并且与源电极126相对的漏电极128以及与栅电极102重叠的氧化物半导体层123，且在氧化物半导体层123和栅电极102之间安置有栅极绝缘层108以在各个源电极126和漏电极128之间形成沟道。氧化物半导体层123包括例如氧化锌(ZnO)用作氧化锌基物质。可选择的，氧化物半导体层123除了ZnO之外可以进一步包括诸如In和Ga的材料。例如，氧化物半导体层123可以包括GaZnO、InZnO或者GaInZnO。Ga、In和Zn的构成比例可以设置成1∶1∶1或者2∶2∶1。栅极线104将经由栅极垫片150提供的扫描信号供应到TFT 130的栅电极102。栅极线104和栅电极102都可以由非透光金属层形成在下部基板101上。因此，非透光金属层可以包括Cu、Mo、Al、Cu合金、Mo合金或者Al合金。
数据线124与栅极线104交叉以确定像素区域并且通过数据垫片160将像素信号供应到TFT 130的源电极126。
TFT 130的数据线124以及源电极126和漏电极128中的每一个都可以形成为具有包括透光导电层的至少两层的多层结构。例如，数据线124、源电极126和漏电极128中的每一个都可以包括由透光导电层形成的第一导电层105和由低电阻金属形成的第二导电层107从而形成多层结构。第一导电层105可以由例如p-ITO(多晶铟锡氧化物)、铟锡氧化物(ITO)或者铟锌氧化物(IZO)形成且第二导电层107可以由Cu、Mo、Al、Ti、Al-Ni合金、Cu合金、Mo合金或者Al合金形成。
包含在源电极126和漏电极128中的第一导电层105易于与氧化物半导体层123接触。源电极126和漏电极128可以包括由透光导电层形成的第一导电层105和由低电阻金属形成的第二导电层107以形成该多层结构，因此在大尺度TFT基板的情况下防止电阻升高。包含在源电极126和漏电极128中的第二导电层107可以由例如上面描述的低电阻金属形成以防止视频信号的延迟。
漏电极128的第一导电层105在栅极绝缘层108上延伸以形成像素电极122。这样，像素电极122与漏电极128成为一体。当视频信号通过TFT 130供应到像素电极122时，像素电极122与供应有公共电压的公共电极一起产生电场并且根据介电各向异性使得在TFT和滤光器基板之间取向的液晶分子旋转。穿过像素区域的光的透射率根据液晶分子的旋转度而变化，因此产生灰度。
栅极垫片150连接到栅极驱动器(未示出)以把来自栅极驱动器的扫描信号供应到栅极线104。如图2B所示，栅极垫片150包括从栅极线104延伸的下部栅极垫片电极152和通过穿透栅极绝缘层108的栅极垫片接触孔154连接到下部栅极垫片电极152的上部栅极垫片电极156。
数据垫片160连接到数据驱动器(未示出)以把来自数据驱动器的像素信号供应到数据线124。如图2C所示，数据垫片160包括下部数据垫片电极166和上部数据垫片电极168，该下部数据垫片电极166由在栅极绝缘层108上从数据线124延伸的第一导电层105形成，该上部数据垫片电极168由第二导电层107形成。
如图2A所示，当通过热压合将滤光器和TFT基板粘合时，柱状间隔物138通过压力转换提供足够的液晶下降边缘(dropping margin)。并且柱状间隔物138防止黑矩阵壁直接接触TFT基板。通过在具有TFT 130的下部基板101上执行有机层工艺来形成柱状间隔物138。因此，形成柱状间隔物138不需要沉积和蚀刻工艺，因而简化了制造工艺。
图3至19C是解释根据本发明的TFT基板的平面图和截面图。
图3是平面图且图4A、4B和4C是截面图，其用于解释以制造图1中的TFT基板的方法形成第一导电图形组。
参照图3、4A、4B和4C，第一导电图形组形成在下部基板101上，第一导电图形组包括栅极线104、栅电极102和下部栅极垫片电极152。
更特别的，通过例如溅射的沉积法将栅极金属层沉积在下部基板101上。通过光刻和蚀刻使栅极金属层图形化以形成包括栅极线104、栅电极102和下部栅极垫片电极152的第一导电图形组。栅极金属层可以由Al、Mo、Cr或Cu形成。
图5是平面图且图6A、6B和6C是截面图，其用于解释以制造图1中的TFT基板的方法形成栅极绝缘层和氧化物半导体图形。图7A、7B、7C、8A、8B、8C、9A、9B、9C、10A、10B、10C、11A、11B和11C是用于详细地解释制造图6A、6B和6C中所示的TFT基板的方法的截面图。
参照图5、6A、6B和6C，栅极绝缘层108形成在具有第一导电图形组的下部基板101上。然后在栅极绝缘层108上形成氧化物半导体图形123。通过使用衍射曝光掩模或者半色调掩模的掩模工艺形成氧化物半导体图形123。在下面的描述中，将解释使用第一衍射曝光掩模200的实例。
参照图7A、7B和7C，栅极绝缘层108和氧化物半导体层153形成在具有第一导电图形组的下部基板101上。无机绝缘层和氧化物半导体层顺序地沉积在下部基板101的表面上以形成栅极绝缘层108和氧化物半导体层153。用无机绝缘物通过沉积例如PECVD(等离子体增强化学气相沉积)形成栅极绝缘层108。无机绝缘物包括氧化硅(SiOx)、氮化硅(SiNx)等。通过沉积例如MOCVD(金属有机物化学气相沉积)或溅射形成氧化物半导体层153。上面详细描述的氧化锌基物质可以用作氧化物半导体层153。
参照图8A、8B和8C，光刻胶层143通过旋涂或者非旋转式涂布完全沉积在氧化物半导体层153上。接着，通过使用图9A中所示的第一衍射曝光掩模200的光刻法对光刻胶层143曝光并且显影以形成具有不同的厚度的第一光刻胶图形202a和第二光刻胶图形202b，如图9A、9B和9C所示。
第一衍射曝光掩模200包括具有形成在石英基板208上的防护层204的防护区S11、具有形成在石英基板208上的多个缝隙206的缝隙区S12以及仅设置有石英基板208的透射区S13。防护区S11阻挡了形成氧化物半导体层153的区域中的紫外线以使得在显影工艺后留下第一光刻胶图形202a，如图9A、9B和9C所示。缝隙区S12在除了形成氧化物半导体图形153的区域之外的一区域中和除了在栅极垫片150上用于形成栅极垫片接触孔154的部分之外的一区域中衍射紫外线以使得在显影工艺后保留第二光刻胶图形202b，其比第一光刻胶图形202a薄。为了去除在栅极垫片150上的光刻胶，透射区S13透过紫外线。
使用第一衍射曝光掩模200形成包括第一光刻胶图形202a和第二光刻胶图形202b的第一光刻胶图形组。使用第一光刻胶图形组作为掩模蚀刻在栅极垫片150上的氧化物半导体层153和栅极绝缘层108以形成在栅极垫片150上的接触孔154。
参照图10A、10B和10C，通过O2-等离子体灰化将第一光刻胶图形组蚀刻到预定厚度以形成第二光刻胶图形组。第二光刻胶图形组包括减小厚度的第一光刻胶图形组。并且去除第二光刻胶图形202b。
参照图11A、11B和11C，使用灰化的第一光刻胶图形202a作为掩模蚀刻氧化物半导体层153。因此，氧化物半导体图形123形成在下部基板101上并且形成了暴露出下部栅极垫片152的接触孔。
图12是平面图且图13A、13B和13C是截面图，其用于解释以制造图1中的TFT基板的方法形成第二导电图形组。图14A、14B、14C、15A、15B、15C、16A、16B、16C、17A、17B和17C是用于详细地解释制造图13A、13B和13C中所示的TFT基板的方法的截面图。
参照图12、13A、13B和13C，第二导电图形组形成在具有氧化物半导体层123的下部基板101上，该第二导电图形组包括源电极126和漏电极128、像素电极122、上部栅极垫片电极156以及上部数据电极166和下部数据电极168。通过使用衍射曝光或半色调掩模的掩模工艺形成第二导电图形组。在接下来的描述中，将解释使用第二衍射曝光掩模的情况。
参照图14A、14B和14C，通过沉积例如溅射，在形成了氧化物半导体层123的下部基板101上形成第一导电层133和第二导电层135。第一导电层133可以由ITO(铟锡氧化物)或者IZO(铟锌氧化物)形成。第二导电层135可以由Cu、Mo、Al、Ti、A1-Ni合金、Cu合金、Mo合金或者Al合金形成。
参照图15A、15B和15C，光刻胶145通过非旋转或旋转涂布完全沉积在第一导电层133和第二导电层135之上。接着通过使用图16A和图16B所示的第二衍射曝光掩模210的光刻法在光刻胶145上执行曝光和显影以形成具有不同厚度的第三光刻胶图形212a和第四光刻胶图形212b，如图16A、16B和16C所示。
第二衍射曝光掩模210包括具有形成在石英基板218上的防护层214的防护区S21、具有形成在石英基板218上的多个缝隙216的缝隙区S22和仅设置有石英基板218的透射区域S23。防护区S21在将形成源电极126和漏电极128的区域中阻挡紫外线以使得在显影工艺后留下第三光刻胶图形212a，如图16A、16B和16C所示。缝隙区S22在形成像素电极122和上部栅极垫片电极156的区域中衍射紫外线以使得在显影工艺后保留第四光刻胶图形212b，其比第三光刻胶图形212a薄。并且为了在显影工艺之后去除光刻胶，透射区S23透过紫外线。
如图16A、16B和16C所示，通过使用第三光刻胶图形212a和第四光刻胶图形212b作为掩模的蚀刻工艺使得第一导电层105和第二导电层107图形化以暴露氧化物半导体层123。
参照图17A、17B和17C，通过O2-等离子体灰化减小第三光刻胶图形212a的厚度并且去除第四光刻胶图形212b。随后通过使用灰化的第三光刻胶图形212a作为掩模的蚀刻工艺去除第二导电层107。提供了由第一导电层105和第二导电层107形成的源电极126和漏电极128，并且形成了由第一导电层105形成的像素电极122和上部栅极垫片电极156。将由非晶透明电极133形成的像素电极放入加热炉中在高温中处理以聚合透明电极133。最后，第三光刻胶图形212a从源电极126和漏电极128以及上部数据电极166和下部数据电极168上剥离。
图18是平面图且图19A、19B和19C是截面图，其用于解释以制造图1中的TFT基板的方法形成柱状间隔物。
参照图18、19A、19B和19C，通过旋转或非旋转涂布在具有第二导电图案组的下部基板101上形成有机钝化层。有机钝化层由例如丙烯的有机绝缘物形成。然后通过光刻和蚀刻工艺使得有机钝化层图形化以形成柱状间隔物138。
如上面所述，源电极和漏电极包括易于与氧化物半导体层接触的第一导电层和具有低电阻的第二导电层，因此防止了由大尺度区域增大的电阻所造成的信号延迟。进一步，延伸源/漏电极之一以形成像素电极，因此简化了生产工艺。另外，第一导电层和第二导电层分别包括透明电极和低电阻金属层，因此降低了材料成本。
本领域的一般技术人员可以理解在不脱离本发明的精神和范围的情况下可以对本发明进行多种变形和修正。这样，意味着本发明覆盖了在权利要求和其等价物范围内提供的此发明的变形和修正。
该申请根据美国法典第35篇119条要求了在2006年12月14日向韩国知识产权局提交的申请号为10-2006-0127671的韩国专利为优先权，其公开的全部内容作为参考列入此处。

Claims (14)

1.一种制造薄膜晶体管基板的方法，包括：
在基板表面形成包括栅极线、栅电极和栅极垫片电极的第一导电图形组；
在其上形成有该第一导电图形组的该基板的表面上形成栅极绝缘层；
在该栅极绝缘层上形成与该栅电极重叠的氧化物半导体图形；
在其上形成有该氧化物半导体图形的该基板的表面上顺序形成第一导电层和第二导电层，该第一导电层由透明导电材料形成并且该第二导电层由金属材料形成；
图形化该第一导电层和第二导电层以形成包括数据线、源电极、漏电极和数据垫片的第二导电图形组以及形成与该漏电极的该第一导电层一体形成的像素电极；和
在该源电极和该漏电极上形成由有机绝缘层构成的柱状间隔物，用于当滤色器基板与所述薄膜晶体管基板粘合在一起时，提供足够的液晶下降边缘。
2.如权利要求1所述的方法，进一步包括形成连接到该漏电极的像素电极，该像素电极在该栅极线和该数据线的交叉点所限定的区域中由该第一导电层形成。
3.如权利要求1所述的方法，其中该第一导电层在形成了该源电极和该漏电极的区域中与该氧化物半导体图形接触。
4.如权利要求1所述的方法，其中该第一导电层由多晶铟锡氧化物、铟锡氧化物或者铟锌氧化物形成。
5.如权利要求1所述的方法，其中该第二导电层由选自于由Cu、Mo、Al、Ti、Al-Ni合金、Cu合金、Mo合金和Al合金组成的组中的材料形成。
6.如权利要求1所述的方法，其中该氧化物半导体图形包括包含氧化锌基物质的氧化物半导体层。
7.如权利要求6所述的方法，其中形成该氧化物半导体图形包括：
在该栅极绝缘层上形成氧化物半导体层；
在该氧化物半导体层上形成具有不同厚度的第一光刻胶图形和第二光刻胶图形；
通过使用该第一光刻胶图形和第二光刻胶图形作掩模蚀刻该氧化物半导体层和该栅极绝缘层而形成暴露下部栅极垫片电极的接触孔；
通过灰化该第一光刻胶图形和第二光刻胶图形去除该第一光刻胶图形和第二光刻胶图形中较薄的一个；以及
通过去除经由去除的第二光刻胶图形的一部分暴露的该氧化物半导体层而形成该氧化物半导体图形。
8.如权利要求1所述的方法，其中形成该第二导电图形组进一步包括通过高温热处理该第一导电层而聚合非晶透明电极。
9.一种薄膜晶体管基板，包括：
形成在基板上的栅极线和栅电极；
形成在该栅极线和该栅电极上的栅极绝缘层；
在该栅极绝缘层上与该栅电极重叠的氧化物半导体层；
在该氧化物半导体层和该栅极绝缘层上由第一导电层和第二导电层形成的数据线、源电极和漏电极，该第一导电层由透明导电材料形成并且该第二导电层由金属材料形成；
与该漏电极的该第一导电层一体形成的像素电极；和
在该源电极和漏电极上由有机绝缘层形成的柱状间隔物，用于当滤色器基板与所述薄膜晶体管基板粘合在一起时，提供足够的液晶下降边缘。
10.如权利要求9所述的薄膜晶体管基板，该第一导电层由多晶铟锡氧化物、铟锡氧化物或者铟锌氧化物形成。
11.如权利要求9所述的薄膜晶体管基板，其中该第二导电层由选自于由Cu、Mo、Al、Ti、Al-Ni合金、Cu合金、Mo合金和Al合金组成的组中的材料形成。
12.如权利要求9所述的薄膜晶体管基板，进一步包括形成在该栅极线的一端的栅极垫片，其中该栅极垫片由下部栅极垫片电极和连接到该下部栅极垫片电极并且由该第一导电层形成的上部栅极垫片电极组成。
13.如权利要求9所述的薄膜晶体管基板，其中该氧化物半导体层包含氧化锌基物质。
14.如权利要求9所述的薄膜晶体管基板，进一步包括形成在该数据线的一端的数据垫片。
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