CN105826249A - 金属层制作方法、功能基板及其制作方法、以及显示装置 - Google Patents

金属层制作方法、功能基板及其制作方法、以及显示装置 Download PDF

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Publication number
CN105826249A
CN105826249A CN201610221405.7A CN201610221405A CN105826249A CN 105826249 A CN105826249 A CN 105826249A CN 201610221405 A CN201610221405 A CN 201610221405A CN 105826249 A CN105826249 A CN 105826249A
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Prior art keywords
insulating barrier
metal level
manufacture method
etching
substrate
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CN201610221405.7A
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CN105826249B (zh
Inventor
张小祥
罗丽平
刘明悬
郭会斌
张治超
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Priority to CN201610221405.7A priority Critical patent/CN105826249B/zh
Publication of CN105826249A publication Critical patent/CN105826249A/zh
Priority to PCT/CN2017/000062 priority patent/WO2017177725A1/zh
Priority to US15/541,580 priority patent/US10209584B2/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/201Filters in the form of arrays
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
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    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
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    • G02F1/136286Wiring, e.g. gate line, drain line
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    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • G02F1/136295Materials; Compositions; Manufacture processes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/38Anti-reflection arrangements
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    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/50Photovoltaic [PV] energy
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

一种金属层的制作方法,功能基板及其制作方法、以及显示装置。该金属层的制作方法包括:在衬底基板上形成绝缘层;在绝缘层上形成刻蚀缓冲层;图案化刻蚀缓冲层和绝缘层以在绝缘层中形成多个凹入的微结构;剥离刻蚀缓冲层;以及在绝缘层上形成金属层,金属层临近绝缘层的表面上形成有填充到多个凹入的微结构的凸起部分。该金属层的制作方法可形成具有防反光效果的金属层。

Description

金属层制作方法、功能基板及其制作方法、以及显示装置
技术领域
本发明的实施例涉及一种金属层制作方法、功能基板及其制作方法、以及显示装置。
背景技术
金属电极以及金属导线被广泛地应用于液晶显示器(LiquidCrystalDisplay,LCD)以及有机发光显示器(OrganicLightEmittingDiodeDisplay,OLED)等显示装置中。例如,在通常的液晶显示器中,其阵列基板包括由金属制成的栅极、栅线、源漏电极或数据线。另外,在具有触控功能的显示装置中通常还包括由金属制成的触控电极。
在显示装置领域,通常,金属电极和金属导线是通过先在衬底基板上形成一金属层,然后利用构图工艺图案化该金属层形成。由于金属层的反光能力较强,因此,金属电极和金属导线具有较强的反光能力。
发明内容
本发明至少一实施例提供一种金属层制作方法、功能基板及其制作方法、以及显示装置。该金属层的制作方法通过在金属层下形成绝缘层,并在在该绝缘层上形成多个凹入的微结构以使形成在该绝缘层的金属层临近该绝缘层的表面上形成填充到多个凹入的微结构的凸起部分,从而形成粗糙面。金属层临近该绝缘层的表面可将照射到该表面的光反射到不同的方向,可用于解决金属层的镜面反光问题。
本发明至少一个实施例提供一种金属层的制作方法,其包括:在衬底基板上形成绝缘层;在所述绝缘层上形成刻蚀缓冲层;图案化所述刻蚀缓冲层和所述绝缘层以在所述绝缘层中形成多个凹入的微结构;剥离所述刻蚀缓冲层;以及在所述绝缘层上形成金属层,所述金属层临近所述绝缘层的表面上形成有填充到所述多个凹入的微结构的凸起部分。
例如,在本发明一实施例提供的一种金属层的制作方法中,在所述刻蚀缓冲层上形成光刻胶;利用掩模板对所述光刻胶进行曝光、显影并形成光刻胶图案;以所述光刻胶图案为掩膜对所述刻蚀缓冲层和所述绝缘层进行刻蚀,从而图案化所述刻蚀缓冲层和所述绝缘层以在所述绝缘层中形成多个凹入的微结构。
例如,在本发明一实施例提供的一种金属层的制作方法中,以所述光刻胶图案为掩膜对所述刻蚀缓冲层和所述绝缘层进行刻蚀的过程中,所述刻蚀缓冲层的刻蚀速率大于等于所述绝缘层的刻蚀速率。
例如,在本发明一实施例提供的一种金属层的制作方法中,所述多个凹入的微结构包括微孔或微沟槽。
例如,在本发明一实施例提供的一种金属层的制作方法中,所述微孔包括倒圆锥孔、倒锥台孔或倒半球孔。
例如,在本发明一实施例提供的一种金属层的制作方法中,所述多个凹入的微结构规则排列。
例如,在本发明一实施例提供的一种金属层的制作方法中,所述刻蚀缓冲层包括深紫外吸光氧化物。
例如,在本发明一实施例提供的一种金属层的制作方法中,所述绝缘层的厚度为
例如,在本发明一实施例提供的一种金属层的制作方法中,所述多个凹入的微结构在所述绝缘层中贯穿或非贯穿。
本发明至少一个实施例提供一种功能基板的制作方法,其包括:在衬底基板上形成金属层;以及图案化所述金属层以形成导电结构,所述金属层使用上述任一项所述金属层的制作方法形成。
例如,在本发明一实施例提供的一种功能基板的制作方法中,所述导电结构包括栅线、栅极、数据线、源极、漏极或触控电极。
本发明至少一个实施例提供一种功能基板,其包括:衬底基板、设置在所述衬底基板上的绝缘层以及设置在所述绝缘层上的导电结构;所述导电结构包括金属层,所述绝缘层中具有多个凹入的微结构,所述金属层临近所述绝缘层的表面上形成有填充到所述多个凹入的微结构的凸起部分。
例如,在本发明一实施例提供的一种功能基板中,所述多个凹入的微结构包括微孔或微沟槽。
例如,在本发明一实施例提供的一种功能基板中,所述微孔包括倒圆锥孔、倒锥台孔或倒半球孔。
例如,在本发明一实施例提供的一种功能基板中,所述多个凹入的微结构规则排列。
例如,在本发明一实施例提供的一种功能基板中,所述刻蚀缓冲层包括深紫外吸光氧化物。
例如,在本发明一实施例提供的一种功能基板中,所述绝缘层的厚度为
例如,在本发明一实施例提供的一种功能基板中,所述多个凹入的微结构在所述绝缘层中贯穿或非贯穿。
例如,在本发明一实施例提供的一种功能基板中,所述导电结构包括:栅线、栅极、数据线、源极、漏极或触控电极。
本发明至少一个实施例提供一种显示装置,其包括上述任一项所述的功能基板。
例如,本发明一实施例的提供的显示装置还包括:彩膜基板、液晶层,其中,所述液晶层设置在所述功能基板与所述彩膜基板之间,所述功能基板远离所述液晶层的一面为该显示装置的出光面。
附图说明
为了更清楚地说明本公开实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本公开的一些实施例,而非对本公开的限制。
图1为本发明一实施例提供的一种金属层的制作方法的流程图;
图2为本发明一实施例提供的在衬底基板上形成绝缘层的示意图;
图3为本发明一实施例提供的在绝缘层上形成刻蚀缓冲层的示意图;
图4a-4b为本发明一实施例提供的图案化刻蚀缓冲层和绝缘层的示意图;
图5为本发明一实施例提供的剥离刻蚀缓冲层的示意图;
图6为本发明一实施例提供的在绝缘层上形成金属层的示意图;
图7a-7c为本发明一实施例提供的图案化刻蚀缓冲层和绝缘层的工艺流程示意图;
图8a-8d为本发明一实施例提供的绝缘层和绝缘层中多个凹入的微结构的平面示意图;
图9为本发明一实施例提供的在衬底基板上形成金属层的示意图;
图10为本发明一实施例提供的一种功能基板的示意图;
图11a为本发明一实施例提供的另一种功能基板的局部平面示意图;
图11b为本发明一实施例提供的另一种功能基板沿图11a中C-C’方向的剖面示意图;
图12为本发明一实施例提供的一种功能基板中触控电极的平面示意图;以及
图13为本发明一实施例提供的一种显示装置的示意图。
附图标记:
100-功能基板;101-衬底基板;102-绝缘层;1020-微结构;1021-微孔;1022-微沟槽;1023-弯折的微沟槽;103-刻蚀缓冲层;104-金属层;1040-凸起部分;105-光刻胶;106-光刻胶图案;107-导电结构;1071-栅线;1072-栅极;1073-数据线;1074-源极;1075-漏极;1076-触控电极;108-掩模板;111-栅极绝缘层;112-另一绝缘层;113-平坦层;114-像素电极;115-有源层图案;116-过孔;150-出光面;200-彩膜基板;300-液晶层。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本公开保护的范围。
除非另外定义,本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。
随着人们对于显示装置的显示质量不断追求,如何进一步提高显示质量成为了生产厂商和市场追逐的焦点。在通常的显示装置中,例如在液晶显示器中,其阵列基板包括由金属制成的栅极、栅线、源极、漏极或数据线等。这些金属电极或金属导线具有较强的反光能力,当光照射到这些金属电极和金属导线上时,会产生镜面反射,从而影响显示质量。经研究,本申请的发明人在研究中认为将栅极、栅线、源极、漏极或数据线的表面做成粗糙面,可解决上述的反光问题,从而可提高显示质量。然而,这些栅极、栅线、源极、漏极或数据线通常是直接形成在脆弱的阵列基板上并且具有较小的尺寸,通常的表面粗糙化工艺很难发挥作用。
本发明的实施例提供一种金属层制作方法、功能基板及其制作方法、以及显示装置。该金属层的制作方法包括:在衬底基板上形成绝缘层;在绝缘层上形成刻蚀缓冲层;图案化刻蚀缓冲层和绝缘层以在绝缘层中形成多个凹入的微结构;剥离刻蚀缓冲层;以及在绝缘层上形成金属层,金属层临近绝缘层的表面上形成有填充到多个凹入的微结构的凸起部分。由于金属层临近该绝缘层的表面上形成有填充到微结构的凸起部分,可将照射到该表面的光反射到不同的方向,可解决金属层的镜面反射问题。
下面结合附图,对本发明实施例提供的金属层制作方法、功能基板及其制作方法、以及显示装置进行说明。
实施例一
本实施例提供一种金属层的制作方法,如图1所示,其包括以下步骤110~150。
步骤110:如图2所示,提供衬底基板101,在衬底基板101上形成绝缘层102。
例如,衬底基板101可为玻璃基板、石英基板、树脂基板或其他基板;绝缘层102的材料可为氮化硅(SiNx)、氧化硅(SiOX)、氮氧化硅(SiNxOy)或其他绝缘材料。
步骤120:如图3所示,在绝缘层102上形成刻蚀缓冲层103。
例如,刻蚀缓冲层103可包括深紫外吸光氧化物(deepultravioletlight-absorbingoxide,DUO),具体地,刻蚀缓冲层103可包括有机硅氧烷聚合物。
步骤130:图案化刻蚀缓冲层103和绝缘层102以在绝缘层102中形成多个凹入的微结构1020。
例如,如图4a所示,多个凹入的微结构1020贯穿绝缘层102;或者,如图4b所示,绝缘层102没有被贯穿,所形成的多个凹入的微结构1020形成在绝缘层102的上部。
步骤140:如图5所示,剥离刻蚀缓冲层103。
步骤150:如图6所示,在绝缘层102上形成金属层104,金属层104临近绝缘层102的表面上形成有填充到多个凹入的微结构1020的凸起部分1040。
需要说明的是,本实施例中的临近是指接近、靠近的意思;凹入的微结构1020是指在步骤130中图案化过程中绝缘层120中被去除的部分;另外,凸起部分140与凹入的微结构1020形状相互配合。
例如,金属层104可为铬、钼、铝、铜、铝、铝合金、铜、铜合金等中任一的单层或其中几种的叠层。
在本实施例提供的金属层的制作方法中,通过刻蚀剂在绝缘层102上刻蚀出多个凹入的微结构1020,然后在绝缘层102上形成金属层104,使得形成在绝缘层102上的金属层104临近绝缘层102的表面上形成有填充到多个凹入的微结构1020的凸起部分1040;也就是说,金属层104临近绝缘层102的表面为粗糙面;当光照射到金属层104临近绝缘层102的表面时,光被反射到各个方向,避免产生整体的镜面反射;由此,金属层104临近绝缘层102的表面可起到防反光的作用。另外,在显示领域中,刻蚀工艺的刻蚀精度一般在2μm左右,为了形成具有更小尺寸的多个凹入的微结构1020,如图4a-4b所示,在绝缘层102上形成的刻蚀缓冲层103可通过控制刻蚀剂的剂量或刻蚀的时间使得形成在刻蚀缓冲层103和绝缘层102中的刻蚀通道具有V字形或倒梯形,从而使得形成在绝缘层102中的多个凹入的微结构1020的尺寸小于2μm。需要说明的是,上述的刻蚀通道指刻蚀剂蚀刻刻蚀缓冲层103和绝缘层102后在垂直于衬底基板101的方向上留下的通孔。
例如,在本实施例一示例提供的金属层的制作方法中,图案化刻蚀缓冲层103和绝缘层102以在绝缘层102中形成多个凹入的微结构1020的步骤130包括以下具体步骤131~133。
步骤131:如图7a所示,在刻蚀缓冲层103上形成光刻胶105。
步骤132:如图7b所示,利用掩模板108对光刻胶105进行曝光、显影以得到光刻胶图案106。
步骤133:如图7c所示,以光刻胶图案106为掩膜对刻蚀缓冲层103和绝缘层102进行刻蚀,从而图案化刻蚀缓冲层103和绝缘层102以在绝缘层102中形成多个凹入的微结构1020。
例如,在本实施例一示例提供的金属层的制作方法中,在以光刻胶图案106为掩膜对刻蚀缓冲层103和绝缘层102进行刻蚀的过程中,刻蚀缓冲层103的刻蚀速率大于等于绝缘层102的刻蚀速率。也就是说,在使用可同时蚀刻刻蚀缓冲层103和绝缘层102的刻蚀剂进行刻蚀时,刻蚀缓冲层103相对于该刻蚀剂的刻蚀速率设置为大于等于绝缘层102相对于该刻蚀剂的刻蚀速率。由此,在刻蚀剂蚀刻完刻蚀缓冲层103后,刻蚀剂在刻蚀绝缘层102的形成的刻蚀通道的尺寸不会增大,从而使得形成在绝缘层102中的多个凹入的微结构1020的尺寸更小。另外,当刻蚀缓冲层103的刻蚀速率等于绝缘层102的刻蚀速率时,形成在刻蚀缓冲层103和绝缘层102中的刻蚀通道可具有较规则的V字形或倒梯形,有利于控制形成在绝缘层102中的多个凹入的微结构1020的尺寸。需要说明是,刻蚀缓冲层103的刻蚀速率大于等于绝缘层102的刻蚀速率可通过针对同一刻蚀剂选取具有不同刻蚀速率的材料来实现,或者,通过针对刻蚀缓冲层103与绝缘层102的材料选取具有不同刻蚀速率的刻蚀剂来实现。当然,刻蚀缓冲层103的刻蚀速率也可设置为小于绝缘层102的刻蚀速率,本发明实施例在此不做限制。另外,上述的等于并不限于完全相等,也可包括刻蚀缓冲层103的刻蚀速率与绝缘层102的刻蚀速率的差值在刻蚀缓冲层103的刻蚀速率的5%以内的情况。
例如,在本实施例一示例提供的金属层的制作方法中,多个凹入的微结构1020可包括微孔1021或微沟槽1022,相应地使填充到多个凹入的微结构1020的凸起部分1040包括微小的凸起或凸条,从而将照射到凸起或凸条的平行光反射到不同的方向。
例如,图8a-8d是绝缘层102和形成在绝缘层102中多个凹入的微结构1020的平面示意图,如图8a所示,绝缘层102中的多个凹入的微结构1020包括微孔1021;如图8b所示,绝缘层102中的多个凹入的微结构1020包括微沟槽1022。为了将照射到凸起部分1040反射到更多的不同方向,可将绝缘层102中的多个凹入的微结构1020设置为更复杂的结构;例如,如图8c所示,绝缘层102中的多个凹入的微结构1020可包括弯折的微沟槽1023;如图8d所示,绝缘层102中的多个凹入的微结构1020可包括微孔1021和微沟槽1022的组合。虽然如此,本发明的实施例不限于上述示出的情形。
例如,上述的微孔1021可包括倒圆锥孔、倒锥台孔或倒半球孔等。相应地,填充到上述微孔1021的凸起部分1040可包括圆锥、锥台或半球等。
例如,在本实施例一示例提供的金属层的制作方法中,多个凹入的微结构1020规则排列。需要说明的是,上述的规则排列是指多个凹入的微结构1020在分布上合乎一定的方式或者以一定的图案周期排布。
例如,在本实施例一示例提供的金属层的制作方法中,绝缘层102的厚度可以为需要说明的是,当绝缘层的厚度设置地较薄时,如果直接在绝缘层中刻蚀微结构,由于刻蚀工艺中刻蚀剂的剂量相对于较薄的绝缘层较难控制等原因,形成的微结构很难适用于本身就具有较小尺寸的金属电极或导线。因此,当绝缘层的厚度设置地较薄时,刻蚀缓冲层还可以起到对过量的刻蚀剂进行消耗的作用,从而使得少量的刻蚀剂能够到达绝缘层,从而刻蚀出微小的微结构。
实施例二
本实施例提供一种功能基板的制作方法,包括以下步骤210~220。
步骤210:如图9所示,采用上述实施例一提供的任一金属层的制作方法在衬底基板101上形成金属层104。
例如,衬底基板101可为玻璃基板、石英基板、树脂基板或其他基板;金属层104为铬、钼、铝、铜、铝,铝合金,铜,铜合金等中任一的单层或其中几种的叠层。
步骤220:如图10所示,图案化金属层104以形成导电结构107。
例如,上述的图案化可包括涂覆光刻胶、曝光、显影、蚀刻、与剥离光刻胶的步骤。
在本实施例提供的功能基板的制作方法中,由于采用了上述实施例一提供的金属层的制作方法,金属层104靠近衬底基板101的表面上形成有凸起部分1040。也就是说,金属层104靠近衬底基板101的表面为粗糙面。由此,通过图案化该金属层104所形成的导电结构107靠近衬底基板101的表面也为粗糙面。当光照射到导电结构107靠近衬底基板101的表面时,光被反射到各个方向。由此,导电结构107靠近衬底基板101的表面可起到防镜面反光的作用。
例如,本实施例一示例提供的功能基板的制作方法可以用于制作液晶显示器(LiquidCrystalDisplay,LCD)或有机发光显示器(OrganicLightEmittingDiodeDisplay,OLED)等显示装置的阵列基板。
例如,如图11a所示,导电结构107可包括栅线1071和栅极1072;栅线1071可与栅极1072可通过图案化同一层金属层形成。具体地,如图11b所示,本实施例提供的功能基板的制作方法可包括:采用实施例一所述的金属层的制作方法在衬底基板101上形成栅极金属层,图案化栅极金属层以形成栅线1071和栅极1072。
例如,如图11a所示,导电结构107也可包括数据线1073、源极1074或漏极1075。例如,如图11b所示,本实施例提供的功能基板的制作方法可包括:在衬底基板101、栅线1071和栅极1072上形成栅极绝缘层111;在栅极绝缘层111上正对栅极1072的位置形成有源层图案115;用实施例一所述的任一金属层的制作方法在栅极绝缘层111和有源层图案115上形成源漏金属层;图案化该源漏金属层以形成数据线1073、源极1074和漏极1075,该源极1074和漏极1075分设在有源层图案115的两侧。
例如,如图11b所示,本实施例提供的功能基板的制作方法还可包括:在上述形成的基板上形成平坦层113;在平坦层113中形成连接漏极1075的过孔116;以及在平坦层113上形成像素电极114,该像素电极114通过过孔116与漏极1074电性连接。
例如,如图12所示,为了实现触控功能,以自电容的触控电极结构为例,导电结构107可包括触控电极1076。具体地,本实施例提供的功能基板的制作方法还可包括形成触控电极1076的步骤。由于触控电极1076同样可通过先形成金属层然后再图案化形成,其具体的形成步骤在此不再赘述。当然,导电结构107亦可包括互电容的触控电极,在此不作限制。例如,互电容的触控电极包括多个触控驱动电极和多个触控感应电极,多个触控驱动电极可沿第一方向平行设置,多个触控感应电极可沿第二方向平行设置,第一方向垂直于第二方向。多个触控驱动电极与多个触控感应电极相互绝缘,例如,多个触控驱动电极所在的层与多个触控感应电极所在的层之间设置有绝缘层。
需要说明的是,本实施例包括但不限于制作上述结构的功能基板,本实施例提供的功能基板的制作方法还可以用于制作其他结构的功能基板。
在本实施例提供的功能基板的制作方法中,栅线、栅极、数据线、源极、漏极以及触控电极的尺寸一般只有几微米到几十微米,然而,在显示领域中,刻蚀工艺的刻蚀精度一般在2μm左右。如果直接使用刻蚀工艺在绝缘层上刻蚀微结构,由于刻蚀精度的限制,这些微结构相对于栅线、栅极、数据线、源极、漏极以及触控电极的尺寸显得较大。为了使得栅线、栅极、数据线、源极、漏极以及触控电极的表面粗糙化的效果更好,需要形成具有更小尺寸的多个凹入的微结构。在绝缘层上形成的刻蚀缓冲层可通过控制刻蚀剂的剂量或刻蚀的时间使得形成在刻蚀缓冲层和绝缘层中的刻蚀通道具有V字形或倒梯形,从而使得形成在绝缘层中的多个凹入的微结构的尺寸小于2μm。另外,当本实施例提供的功能基板的制作方法采用实施例一提供的任一金属层的制作方法时,其具有与该金属层的制作方法对应的有益效果,在此不再赘述。
实施例三
本实施例提供一种功能基板,如图10所示,其包括:衬底基板101、设置在衬底基板101上的绝缘层102以及设置在绝缘层102上的导电结构107。导电结构107包括金属层104,绝缘层102中具有多个凹入的微结构1020,金属层104临近绝缘层102的表面上形成有填充到多个凹入的微结构1020的凸起部分1040。
例如,衬底基板101可为玻璃基板、石英基板、树脂基板或其他基板;绝缘层102的材料可为氮化硅(SiNx)、氧化硅(SiOX)、氮氧化硅(SiNxOy)或其他绝缘材料;金属层104为铬、钼、铝、铜、铝,铝合金,铜,铜合金等中的任一的单层或其中几种的叠层;刻蚀缓冲层103可包括深紫外吸光氧化物(deepultravioletlight-absorbingoxide,DUO),具体地,刻蚀缓冲层103可包括有机硅氧烷聚合物。
需要说明的是,多个凹入的微结构1020可贯穿绝缘层102;或者,多个凹入的微结构1020没有贯穿绝缘层102,形成在绝缘层102的上部。
在本实施例提供的功能基板中,金属层104临近绝缘层102的表面上形成有填充到多个凹入的微结构1020的凸起部分1040。也就是说,金属层104临近绝缘层102的表面为粗糙面;当光照射到金属层104临近绝缘层102的表面时,光被反射到各个方向;由此,金属层104临近绝缘层102的表面可起到防反光的作用。
例如,在本实施例一示例提供的功能基板中,多个凹入的微结构1020可包括微孔1021或微沟槽1022,使填充到多个凹入的微结构1020的凸起部分1040包括微小的凸起或凸条,从而将照射到凸起或凸条的平行光反射到不同的方向。
例如,图8a-8d是绝缘层102和形成在绝缘层102中多个凹入的微结构1020的平面示意图,如图8a所示,绝缘层102中的多个凹入的微结构1020包括微孔1021;如图8b所示,绝缘层102中的多个凹入的微结构1020包括微沟槽1022。为了将照射到凸起部分1040反射到更多的不同方向,可将绝缘层102中的多个凹入的微结构1020设置为更复杂的结构;例如,如图8c所示,绝缘层102中的多个凹入的微结构1020可包括弯折的微沟槽1023;如图8d所示,绝缘层102中的多个凹入的微结构1020可包括微孔1021和微沟槽1022的组合。
例如,上述的微孔1021可包括倒圆锥孔、倒锥台孔或倒半球孔。相应地,填充到上述微孔1021的凸起部分1040可包括圆锥、锥台或半球。
例如,在本实施例一示例提供的功能基板中,多个凹入的微结构1020规则排列。需要说明的是,上述的规则排列是指多个凹入的微结构1020在分布上合乎一定的方式或者以一定的图案周期排布。
例如,在本实施例一示例提供的功能基板中,绝缘层的厚度为需要说明的是,当本实施例提供的功能基板应用于显示装置的阵列基板时,由于绝缘层的厚度较薄,可以减少光透过时的损失,提高开口率。
例如,本实施例一示例提供的功能基板可以用于液晶显示器(LiquidCrystalDisplay,LCD)或有机发光显示器(OrganicLightEmittingDiodeDisplay,OLED)等显示装置的阵列基板。
例如,如图11a所示,导电结构107可包括栅线1071或栅极1072;栅线1071可与栅极1072可通过图案化同一层金属层形成。具体地,本实施例提供的功能基板可包括:衬底基板101;设置在衬底基板101上的绝缘层102以及设置在绝缘层102上的栅线1071和栅极1072。绝缘层102具有多个凹入的微结构1020,栅线1071或栅极1072临近绝缘层102的表面上形成有填充到多个凹入的微结构1020的凸起部分1040。
例如,如图11a所示,导电结构107还可包括数据线1073、源极1074或漏极1075。例如,如图11b所示,本实施例提供的功能基板还可包括:设置在衬底基板101、栅线1071和栅极1072上的栅极绝缘层111;设置在栅极绝缘层111上正对栅极1072的位置的有源层图案115;设置在栅极绝缘层111和有源层图案115上的另一绝缘层112;以及设置在另一绝缘层112上的数据线1073、源极1074和漏极1075,该源极1074和漏极1075分设在有源层图案115的两侧。另一绝缘层112具有多个凹入的微结构1120,数据线1073、源极1074或漏极1075临近另一绝缘层112的表面上形成有填充到多个凹入的微结构1120的凸起部分1040。
例如,如图11b所示,本实施例提供的功能基板还可包括:设置在上述基板上的平坦层113;设置在平坦层113中用于连接漏极1075的过孔116;以及在设置在平坦层113上的像素电极114,该像素电极114通过过孔116与漏极1074电性连接。
例如,如图12所示,为了实现触控功能,以自电容的触控电极结构为例,导电结构107可包括触控电极1076。当然,导电结构107亦可包括互电容触控电极结构的触控电极,在此不作限制。
需要说明的是,本实施例包括但不限于上述结构的功能基板,本实施例提供的功能基板还可以包括其他结构的功能基板。
实施例四
本实施例提供一种显示装置,其包括上述实施例三提供的任一功能基板。
需要说明的是,在本实施例提供的显示装置中,由于功能基板上的导电结构临近绝缘层的表面为粗糙面,当光照射到具有上述功能基板的显示装置时,导电结构临近绝缘层的表面可将光反射到各个方向而不会产生镜面反射,可起到防反光的作用,从而可提高显示质量。
例如,在本实施例提供的显示装置中,如图13所示,其还包括:彩膜基板200、液晶层300;液晶层300设置在功能基板100与彩膜基板200之间。并且,功能基板100远离液晶层300的一面为出光面150。
需要说明的是,在本实施例提供的显示装置中,由于功能基板远离液晶层的一面为出光面,光从彩膜基板一侧入射,从功能基板一侧射出。由于,该显示装置的功能基板朝外,可不用额外设置空间用以弯折连接该功能基板的柔性印刷电路板,从而可减少边框宽度。值得注意的是,当该功能基板作为出光侧时,由于该功能基板具有防反光的效果,外界光照射到功能基板中的导电结构时,导电结构临近绝缘层的表面可将光反射到各个方向而不会产生强烈反光,可大幅提高显示质量。
有以下几点需要说明:
(1)本发明实施例附图中,只涉及到与本发明实施例涉及到的结构,其他结构可参考通常设计。
(2)为了清晰起见,在用于描述本发明的实施例的附图中,层或微结构的厚度和尺寸被放大。可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”,或者可以存在中间元件。
(3)在不冲突的情况下,本发明同一实施例及不同实施例中的特征可以相互组合。
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。

Claims (21)

1.一种金属层的制作方法,包括:
在衬底基板上形成绝缘层;
在所述绝缘层上形成刻蚀缓冲层;
图案化所述刻蚀缓冲层和所述绝缘层以在所述绝缘层中形成多个凹入的微结构;
剥离所述刻蚀缓冲层;以及
在所述绝缘层上形成金属层,所述金属层临近所述绝缘层的表面上形成有填充到所述多个凹入的微结构的凸起部分。
2.根据权利要求1所述金属层的制作方法,其中,在所述刻蚀缓冲层上形成光刻胶;利用掩模板对所述光刻胶进行曝光、显影并形成光刻胶图案;以所述光刻胶图案为掩膜对所述刻蚀缓冲层和所述绝缘层进行刻蚀,从而图案化所述刻蚀缓冲层和所述绝缘层以在所述绝缘层中形成多个凹入的微结构。
3.根据权利要求2所述的金属层的制作方法,其中,以所述光刻胶图案为掩膜对所述刻蚀缓冲层和所述绝缘层进行刻蚀的过程中,所述刻蚀缓冲层的刻蚀速率大于等于所述绝缘层的刻蚀速率。
4.根据权利要求1或2所述金属层的制作方法,其中,所述多个凹入的微结构包括微孔或微沟槽。
5.根据权利要求4所述的金属层的制作方法,其中,所述微孔包括倒圆锥孔、倒锥台孔或倒半球孔。
6.根据权利要求1或2所述的金属层的制作方法,其中,所述多个凹入的微结构规则排列。
7.根据权利要求1或2所述金属层的制作方法,其中,所述刻蚀缓冲层包括深紫外吸光氧化物。
8.根据权利要求1或2所述金属层的制作方法,其中,所述绝缘层的厚度为
9.根据权利要求1或2所述金属层的制作方法,其中,所述多个凹入的微结构在所述绝缘层中贯穿或非贯穿。
10.一种功能基板的制作方法,包括:
在衬底基板上形成金属层;以及
图案化所述金属层以形成导电结构,其中,所述金属层使用如权利要求1-9任一项所述金属层的制作方法形成。
11.根据权利要求10所述的功能基板的制作方法,其中,所述导电结构包括栅线、栅极、数据线、源极、漏极或触控电极。
12.一种功能基板,包括:衬底基板、设置在所述衬底基板上的绝缘层以及设置在所述绝缘层上的导电结构,
其中,所述导电结构包括金属层,其中,所述绝缘层中具有多个凹入的微结构,所述金属层临近所述绝缘层的表面上形成有填充到所述多个凹入的微结构的凸起部分。
13.根据权利要求12所述的功能基板,其中,所述多个凹入的微结构包括微孔或微沟槽。
14.根据权利要求13所述的功能基板,其中,所述微孔包括倒圆锥孔、倒锥台孔或倒半球孔。
15.根据权利要求12-14任一所述的功能基板,其中,所述多个凹入的微结构规则排列。
16.根据权利要求12-14任一所述的功能基板,其中,所述刻蚀缓冲层包括深紫外吸光氧化物。
17.根据权利要求12-14任一所述的功能基板,其中,所述绝缘层的厚度为
18.根据权利要求12-14任一所述的功能基板,其中,所述多个凹入的微结构在所述绝缘层中贯穿或非贯穿。
19.根据权利要求12-14任一所述的功能基板,其中,所述导电结构包括:栅线、栅极、数据线、源极、漏极或触控电极。
20.一种显示装置,包括权利要求12-19任一项所述的功能基板。
21.如权利要求20所述的显示装置,还包括:彩膜基板、液晶层,其中,所述液晶层设置在所述功能基板与所述彩膜基板之间,所述功能基板远离所述液晶层的一面为所述显示装置的出光面。
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