CN1194693A - 微电子弹性接触元件 - Google Patents

微电子弹性接触元件 Download PDF

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Publication number
CN1194693A
CN1194693A CN97190567A CN97190567A CN1194693A CN 1194693 A CN1194693 A CN 1194693A CN 97190567 A CN97190567 A CN 97190567A CN 97190567 A CN97190567 A CN 97190567A CN 1194693 A CN1194693 A CN 1194693A
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China
Prior art keywords
contact element
elastic contact
electronic component
semiconductor devices
substrate
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Granted
Application number
CN97190567A
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English (en)
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CN1134667C (zh
Inventor
B·N·艾尔里格
I·Y·汉德罗斯
G·L·马思乌
D·V·佩德尔森
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FormFactor Inc
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FormFactor Inc
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Publication date
Priority claimed from PCT/US1996/008107 external-priority patent/WO1996037332A1/en
Priority claimed from US08/784,862 external-priority patent/US6064213A/en
Priority claimed from US08/788,740 external-priority patent/US5994152A/en
Priority claimed from US08/802,054 external-priority patent/US6482013B2/en
Priority claimed from US08/852,152 external-priority patent/US6184053B1/en
Application filed by FormFactor Inc filed Critical FormFactor Inc
Publication of CN1194693A publication Critical patent/CN1194693A/zh
Application granted granted Critical
Publication of CN1134667C publication Critical patent/CN1134667C/zh
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Abstract

在衬底的表面上淀积掩模层,并确定掩模层中的开口,再把至少一层金属材料淀积到开口中以制作弹性接触元件,而所述衬底可以是电子元件,例如有源半导体器件。每个弹性接触元件都具有一基端,一接触端和主体部分。该接触端在Z－轴方向偏移(在不同高度)并至少在X和Y方向中一个方向偏离该基端。用这种方法,就可以在该衬底上制作彼此之间具有规定的空间关系的大量弹性接触元件。该弹性接触元件可以制成与其它电子元件的端子暂时(即:压力)或永久(例如:可以用焊接或钎焊或用导电粘合剂)的连接,以实现它们之间的电连接。在一典型的应用中,该弹性接触元件配置在位于半导体晶片上的半导体器件上,以制成与该半导体器件的暂时连接,用于老化和/或试验该半导体器件。

Description

微电子弹性接触元件
本发明涉及适用于电子元件之间实现压力和/或柔性连接的弹性(弹簧)接触(互联)元件(结构)，更确切地说，涉及微型弹性接触元件。
本专利申请是，96年11月13日提出申请的共同所有的共同待审US专利申请NO.60/030,697一个连续部分申请，在这里，随本申请一起供参考。
本专利申请也是95年5月26日提出申请共同所有的共同待审US专利申请No.08/452,255(这以后用“母案”表示)和95年11月13日申请的其相应的PCT专利申请No.PCT/US95/14909的一个连续部分申请，而专利申请No.08/452,255和PCT/US95/14909又是，94年11月15日提出申请的共同所有的共同待审US专利申请No.08/340,144和1994年11月16日申请的其相应的PCT专利申请No.PCT/US94/13373的连续部分申请，而这两份申请No.08/340,144，和PCT/US94/13373又是93年11月16日提出申请的、共同所有的共同待审US专利申请No.08/152,812(现在是USP5,476,211，95年12月19日)的连续部分申请。在这里，引证所有上述申请供参考。
本专利申请也是下列共同所有的共同待审US专利申请的一个连续部分申请：
08/554,902，95年11月9日提出申请(PCT/US95/14844，95年11月13日)；
08/558,332，95年11月15日提出申请(PCT/US95/14885，95年11月15日)；
60/012,027，96年2月21日提出申请(PCT/US96/08117，96年5月24日)；
60/005,189，96年5月17日提出申请(PCT/US96/08107，96年5月24日)；
60/024,555，96年8月26日提出申请；
08/784,862，97年1月15日提出申请；
08/802,054，97年2月18日提出申请；及
08/819,464，97年3月17日提出申请；所有这些申请(除临时专利申请外)都是上述专利案件的连续部分申请，在这里引证这些申请供参考。
由KHANDROS于93年11月16日提出申请的共同所有的共同待审U.S.专利申请No.08/152,812(现在USP4,576,211，95年12月19日公布)，及其相应的共同所有的共同待审“分案”U.S专利申请95年6月1日提出的No.08/457,479(状态：待审)和95年12月11日提出的No.08/570,230(状态：待审)，公开了微电子学应用中制作弹性互联元件的方法，涉及把一弹性拉长芯元件(例如金属丝“芯柱”或“骨架”)的一端固定到电子元件的一端子上，并用具有预定组合厚度的一种或多种材料在该弹性芯元件和所述电子元件的端子邻近表面上涂上一“壳”层，产生具有一定强度和弹性的组件，以得到具有预定强度一挠度(force-to-deflection)特性的弹性接触。用作芯元件的典型材料包括金。用作涂层的典型材料包括镍及其合金。所得的弹性接触适用于在两个或多个电子元件，包括半导体器件，之间实现压力或可拆卸的连接。
由KHANDROS和MATHIEU于94年11月15日申请的共同所有的共同待审US专利申请No.08/340,144和其相应的于94年11月16日申请的PCT专利申请No.PCT/US94/13373(WO95/14314，95年5月26日公开)公开了上述弹性接触元件的大量应用，还公开了用于在弹性接触元件的端部制作接触焊盘的技术。例如，在其图14中，倒置的且以顶尖结束的锥形形式的大量的负凸起或孔，形成于牺牲层(衬底)的表面。然后，用包括例如金或铷和镍的材料层的接触结构形成这些孔。一柔性拉长元件被固定到所得的接触结构上，并可以以上述方式涂层。在最后一步中，去掉该牺牲衬底，所得的弹性接触具有一个在其自由端带有受控形状(例如：削尖)的接触焊盘。
由ELDRIDGE，GRUBE，KHANDROS和MATHIEU于95年5月26日申请的共同所有的共同待审的U.S.专利申请No.08/452,255和95年11月13日申请的其相应PCT专利申请NO.PCT/US95/14909(WO96/17278，96年6月6日公开)，公开了在牺牲衬底上制作接头结构的附加技术和冶金化方法及用于把大量固定其上的弹性接触元件一起转移到电子元件的端子上(例如，见图11A-11F和12A-12C)的技术。
由ELDRIDGE，KHANDROS和MATHIEU于96年5月17日申请的共同所有的共同待审的U.S.临时专利申请No.60/005,189和96年5月24日申请的其相应的PCT专利申请NO.PCT/US96/08107(WO96/37332，96年11月28日公开)，公开了把大量的接触接头结构(例如见图6B中的#620)连接到已固定在电子元件(#630)上的相应的大量拉长接触元件(例如，见图6D中的#632)上的技术。该专利申请还公开了用于制作悬臂形式的“拉长”接头结构的技术，例如，见图7A-7E。该悬臂式接头结构在其一端和另一端之间为锥形。该专利申请的悬臂式接头结构适用于固定到已存在的(即，预先制作的)，并从电子元件(例如见图7F中的# 734)相应的端子上延伸(例如，自由放置)的突起互联元件(例如，见图7F中的# 730)上。
由ELDRIDGE，KHANDROS和MATHIEU于96年8月26日申请的共同所有的共同待审的U.S.临时专利申请No.60/024,555，公开了一种技术，例如图2A-2C，利用此技术可以安装具有彼此不同长度的大量拉长接头结构，以便配置成使它们的外端部间距大于它们的内端部间距。在它们内部，为实现具有沿一直线，例如元件的中心线，配置的端子的电子元件的连接，“接触”端可以是彼此共线的。
本发明更确切地涉及制造具有以细间距配置的端子(焊盘)的现代微电子器件的互联。这里的“细间距”表示微电子器件所配置的端子的间隙小于5密耳，例如2.5密耳或65μm。从下面的描述可知，最好是通过使用平版印刷而不是机械技术来制作接触元件可容易实现的高精度公差来达到。
本发明的一个目的是提供一项用于制作弹性接触元件的改进技术。
本发明的另一目的是提供一项使用适用于细间距高精度公差的微电子学领域的工艺方法来制作弹性接触元件的技术。
本发明又一目的是提供一项直接在有源电子元件上，例如半导体器件，不损坏半导体器件地制作微型弹性接触元件的技术。该技术包括，在存在于半导体晶片上的半导体器件上，在它们被分开(singulated)之前，制作微型弹性接触元件。
本发明又一目的是提供一项用于制作适用插入(可释放连接至)例如半导体器件等电子元件的弹性接触元件的技术，例如用于对所述器件实施老化。
根据本发明，在电子元件上，例如有源半导体元件，制作弹性接触元件的方法是，在相应的一个或多个掩模层上通过光刻确定一个或多个开口，再在该三维的开口里面，淀积一导电金属物质，然后去掉掩模层，得到一个具有毗邻电子元件的一个表面的基(近)端和与基端既平行又垂直分离的接触(远)端(也就是“接头端”或“自由端”)的弹性接触元件。大量的弹性接触元件能够以这种方法制作在电子元件上，并达到光刻(高度精密)公差。
本发明的弹性接触元件，适于制作与例如印刷电路板(PCB)等其它电子元件的端子暂时的或永久的电连接。
用于制作暂时的连接时，弹性接触元件制作于其上的电子元件与另一电子元件安装在一起，以使该弹性接触元件的接头端与其它电子元件的端子压力接触。该弹性接触元件起弹性作用，以保持两元件间的接触压力和电连接。
用于制作永久的连接时，弹性接触元件制作于其上的电子元件与另一电子元件安装在一起，而该弹性接触元件的接头端，通过例如焊接或钎焊或用导电粘合剂连接到其它电子元件的端子上。该弹性接触元件在两电子元件之间是柔性的，并适应于不同电子元件间的热膨胀。
该弹性接触元件适于由至少一层选自能使所得的接触结构当使用时，在有压力施加给其接触(自由)端时，能作为一弹簧(即：显示弹性变形)使用的金属材料形成。
本发明的弹性接触元件能够直接制作在半导体器件的表面上，或制作在大量的存在于半导体晶片上的半导体器件表面上。用这种方法，大量的存在于半导体晶片上的半导体器件能够在其从半导体晶片分开之前，“准备”用于老化或试验。
本发明其它的目的、特征和优点在下面的描述中表现得更明显。
以下具体涉及本发明优选实施例，其例子示于附图中。将要说明的附图，并非限制性的。虽然将结合优选实施例来描述本发明，但是，应该明白，本发明的精神和范围并不仅限于这些特殊的实施例。为描述清楚，选用的附图中某些元件未按比例示出。一般，整个附图中相同的元件用相同的附图标记表示。例如，元件199与另一图中的元件299类同。而且，一般在单个图中，类同的元件也用类同的附图标记表示。例如，大量的元件199，可以用199a，199b，199e等表示。
图1A表示根据本发明。制作弹性接触元件技术的侧向剖面图。
图1B表示根据本发明的图1A中弹性接触元件的侧向剖面图。
图1C表示根据本发明的图1B中弹性接触元件的透视图。
图2A表示根据本发明制作在半导体器件上的弹性接触元件的系统应用示意图。
图2B表示图2A中的系统的部分平面示意图。
图3A表示根据本发明的弹性接触元件的另一实施例的侧向剖面图。
图3B表示根据本发明的图3A中的弹性接触元件的平面示意图。
图3C表示根据本发明的弹性接触元件的另一实施例的侧向剖面图。
图4A-4B表示根据本发明，适用于使大量弹性接触元件的有效长度均匀的技术侧向剖面图。
图5表示根据本发明的弹性接触元件的另一实施例的透视图。
图6A表示根据本发明，在弹性接触元件中实现受控阻抗的技术中的第一步的侧向剖面图。
图6B表示根据本发明，在弹性接触元件中实现受控阻抗的技术中的下一步的侧向剖面图。
图6C表示根据本发明的图6B中的受控阻抗弹性接触元件的侧向剖面图。
于96年11月13日申请的共同所有的共同待审U.S.临时专利申请No.60/030,697，公开了一项用于在电子元件上制作独立式(free-standing)弹性(Spring)接触元件的技术，例如见其图4A-4C。一般地，对准在其上具有开口的数层绝缘层，并用导电材料层“形成”(seeded)，然后导电材料块体就能形成(或沉积)于该已形成的开口中，例如可以使用电镀(或CVD，溅射，无电镀敷等)。去掉绝缘层后，该块体能够作为不仅在元件表面上沿垂直方向延伸，而且能沿其所固定的位置侧向延伸的独立式的弹性接触结构用。使用这种方法，该接触结构很容易设计得不仅沿X-Y平面(平行于元件的表面)是柔性的，而且沿Z-轴也是柔性的，下面分别参照图1A-1C更详细描述。
图1A表示在衬底102上制作大量独立式的弹性(spring)接触元件之一的典型技术100，而衬底102可以是有源电子元件，包括半导体器件，包括存在于半导体晶片(没有示出)上的半导体器件。
衬底102在弹性接触元件将制作其上的表面上具有许多(可能只示出一个)区112。在衬底102是电子元件(例如半导体器件)的情况下，这些区112就是该电子元件的端子(例如焊盘)。
一般地，技术100使用多层(示出三个)带有抵达衬底表面的开口的已构图掩模层104，106和108。所构图的掩模层具有对准区112的开口(如图示)，而这些开口具有规定的尺寸和形状，以使在一层(例如108，106)中的开口比在其下面层(例如分别为106，104)中的开口从区112延伸的更远。换句话说，第一层104具有一个直接形成于区112上的开口。第二层106中的开口的一部分与第一层104中的开口的至少一部分对准，相反，第一层104的一部分在第二层106的开口的一部分下面延伸。同样，第三层108中的开口的一部分与第二层106中的开口的至少一部分对准，相反，第二层106的一部分在第三层108中的开口的一部分下面延伸。一给定的整个开口的底部直接在所选择的区112上，而其顶部被抬高，而且侧向偏离其底部。正如在下面更详细描述的那样，导电金属材料沉积于开口里面，并去掉掩模层，得到一直接制作在衬底上的独立式的接触结构，而该结构的基端固定在衬底102的区112上，其自由端既可以在衬底的表面上延伸，又可以从区112侧向位移。
如果需要，例如用电镀，很薄(例如：450μm)的导电材料114“形成”层，例如：钛/钨(Tiw)可以淀积于开口中。然后，再通过电镀把导电金属材料块体(例如：镍)120沉积于该开口中。
图1B和1C表示所得到的弹性接触元件120，其基端毗邻区112，其自由端(顶端)124在衬底102表面上方沿Z轴方向被抬高，并能从其基端122在X轴和Y轴方向侧向偏移。
正如最清楚可见的图1C所示那样，该接触元件120反抗沿Z轴方向施加在其顶端124的压力，如箭头124所指示的，例如，这是由于产生了与另外电子元件的端子(没有示出)暂时的压力电连接。沿Z轴的柔性能确保接触力(压力)，并能适应其它电子元件上的(没有示出)端子之间的非平面性(如果需要)。这样的暂时电连接有利于形成与电子元件102的暂时连接，例如，用于实施元件102的老化和/或试验。
其顶端124也是自由的可以在X-和Y-方向柔性移动，如分别由箭头136和134指示的。这对于把其顶端124连接(利用焊接，或钎焊，或用导电粘合剂)到具有与衬底(元件)102不同热膨胀系数的其它电子元件(没有示出)的端子(没有示出)上是非常重要的。这样的永久电连接有利于电子元件的组装，例如适用于大量的存储器芯片(每个芯片都以衬底102表示)与例如印刷电路板(“PCB”；没有示出)等其它电子元件的互联衬底的连接。
通过适当选择材料和几何形状，所制作的这些块体120能够用作已制成具有精确尺寸和彼此间精确的间隔的独立式的弹性接触结构。例如，几万个这样的弹性接触元件(120)可以很容易精确地制作在存在于半导体晶片(没有示出)上的半导体器件上的相应数量的端子上。
通过这种方式，展示了一种直接在衬底(102)上，例如象可以在半导体晶片上的半导体器件的电子元件，制作弹性接触元件(120)的方法，该方法是：在衬底(102)的表面上敷上至少一层掩模材料层，并构图该掩模层，使其具有从衬底上的区(112)延伸到衬底表面上方的空间并能侧向和/或横向偏离区112的位置的开口；选择性形成这些开口(114)；再把至少一层导电金属材料淀积于开口中；然后去掉掩模材料，以使遗留的导电金属材料形成从衬底表面延伸的独立式接触元件，每个接触元件都具有一个固定到衬底各区之一上的基端和一个用于实现与电子元件的材料端子电连接的顶端。
重要的是该结构(弹性接触元件)120主要是，最好完全金属化，而且可以形成(制作)为层结构。用作该一层或多层接触结构的合适的材料包括下列金属，但不限于此：
镍，及其合金；
铜，钴，铁，及它们的合金；
金(特别是硬质金)和银，它们都具有优异的载流性能和良好的接触电阻特性；
铂系元素；
贵重金属；
半贵重金属及它们的合金，特别是钯系元素及它们的合金；和
钨，钼和其它难熔金属及它们的合金。
在要求使用焊接类方法情况下，锡，铅，铋，铟及它们的合金也能用。弹性接触元件的一般应用(使用)
综上所述，本发明的弹性接触元件适用于实现与该弹性接触元件制作其上的元件(102)的暂时电连接，例如可以用于进行老化和/或试验。于97年6月15日申请的相同拥有者的共同待审U.S.专利申请No.08/784,862，在其图1A中公开了用于实施晶片级老化和试验的装置，这已再现在图2A中。
图2A表示用于实施存在于半导体晶片上的大量的半导体器件200(200a，200b，200c，200d)的晶片级老化和试验的典型装置。弹性接触元件210(相当于120)制作在每个半导体器件上，并以示意的方式表示。所示的每个器件都具有众多从其表面凸起(示意地)的这种弹性接触元件中的四个。整个半导体晶片适于安装在热控模板204上。
一试验衬底包括一个具有固定在其前表面上的多个有源电子器件206(206a，206b，206c，206d)的互联衬底208。这些器件适用于专用集成电路(ASIC)。一热控模板204a可以固定在互联衬底208的背面。ASIC206以任何合适的方法连接到互联衬底208上，例如用键合线(没有示出)。主机216和电源218通过互联衬底208连接到ASIC上。可以使用合适的夹具212，214，以使晶片(202)对准并向互联衬底(208)移动，直到该弹性接触元件210与位于ASIC(206)前表面上的端子实现压力连接为止，于是可以对半导体器件(202)加电、老化和试验，包括同时操作晶片上的所有器件(202)。
图2B，对应于具有相同拥有者的共同待审U.S.专利申请No.08/784,862的图1B，是单个半导体器件202d与其相对应的单个ASIC206a相连接的示意图，并示意性地表示了所制作的弹性接触元件(210)，其中一些(210a，210b)相对较长，另一些(210c，210d)相对较短，而且其中一些(210a，210c)从焊盘207(和方框所示)的中心列向一个方向延伸，另一些(210b，210d)从焊盘207的中心列向相反方向延伸，以使弹性接触元件的顶端(如圆环所示)的间距(彼此的距离)比其基端的间距大。弹性接触元件的尺寸和形状
本发明的弹性接触元件适于用微加工技术。例如光刻和镀敷来形成，而且该弹性接触元件的形状和大小可以很容易地控制到精确的尺寸。
图3A-3C表示根据本发明的技术制作的弹性接触元件300和350(相当于120)的示意图。
如图3A和3B所示的弹性接触元件300具有一基端部分302，一接触(顶端)端部分304及它们之间的主体部分306，全长为“L”和全高为“H”。如图所示，主体部分306在一个方向上偏离基端部分302的距离为“d2”，其在另一方向上偏离接触端部分304的距离为“d1”。例如，距离“d2”是由第一掩模层(相当于104)的厚度确定的，而距离“d1”是由最后掩模层(相当于108)的厚度确定的。如图3B的顶端示意图所清楚显示的那样，接触元件300可以为锥形，其横向斜度为“α”以使其接触端304(其宽度为w2)比其基端302(亮度为w1)窄。
图3C表示类同的(与接触元件300)弹性接触元件350的示意图，该接触元件350具有一基端部分352(相当于302)，一接触(顶)端部分354(相当于304)，及它们之间的主体部分356(相当于306)。在这个例子中，接触元件350可以为锥形，并提供一厚度斜度“β”，以使接触端304(厚度为t2)比其基端302(厚度为t1)薄。一般尺寸
本发明的弹性接触元件特别适用于在微电子元件之间实现互联。利用上述参数，上文中弹性接触元件的合适尺寸的参数如下：(除特别说明外，单位均为密耳)尺寸    范围      优选
L    10-1000    60-100
H     4-40       5-12
d1    3-15       7±1
d2    0-15       7±1
w1    3-20       8-12
w2    1-10       2-8
t1    1-10       2-5
t2    1-10       1-5
α          0-30°            2-6°
β          0-30 °           0-6°
设定弹性接触元件的特性
具有与其它弹性接触元件不同长度的弹性接触元件的可能性已在上文论述了(见图2B)。为使位于单个电子元件上的大量不同长度弹性接触元件都表现出相同的弹性常数(K)，可以用分别在图3B和3C中描述的方法对每个接触元件进行“定制”斜度角来实现的，但这不是最好方法。另外，用于使不同长度的弹性接触元件的弹性常数一致的更容易的方法分别在图4A和4B中描述。
无论是在其基端(302)比其顶端(304)宽的情况下(图3B)，还是在其基端(352)比其顶端(354)厚的情况下(图3C)，基端(302，352)都具有一个比其顶端(304，354)大的横截面。
图4A表示制作在电子元件410上的弹性接触元件400。该弹性接触元件400具有一基端402(相当于302)，一接触端404(相当于304)，一主体部分406(相当于306)，基端与接触端之间的全长为(L)。为使似乎较短的，(例如，其表现出与相同元件上的较短弹性接触元件类同的工作性能)弹性接触元件400“工作”，用适当的密封剂(例如环氧树脂)密封其基端402和其主体部分406的邻近部分，以把该弹性接触元件“加固”到沿主体部分406距离接触端404为“L1”的点“P”上。
图4B表示用于设定制作在电子元件460上(相当于410)的弹性接触元件450(相当于400)的机械性能的另一项技术。该弹性接触元件450具有一基端452(相当于402)，一接触端454(相当于404)，一主体部分456(相当于406)，其基端与接触端之间的全长为(L)。为使似乎较短的(例如，表现出与相同元件上的较短的弹性接触元件相近的工作性能)弹性接触元件450“工作”，毗邻基端452的主体部分456的一部分“沿”(follows)元件460的表面直到“P”点，并在此“升高”以使它高出该元件的表面。正如在前面的例子(400)中那样，点“P”位于沿主体部分456距离接触端454为“L1”的位置。
弹性接触元件450在元件460的表面上“延伸”的部分是该弹性接触元件450的“尾”端462。除了使用这项技术(图4B)来使弹性常数一致外，在本发明范围内，根据本发明形成的弹性接触元件的尾端沿着元件(460)的表面在任意方向延伸，以实现从元件上给定的端子的“选定路线”(routing)。通过这种方法，例如，元件端子的周边排列能转换为顶端(454)的区域排列，反过来也可以。而且在本发明范围内，两个或多个弹性接触元件(450)的“尾端”(462)能够互相交叉，以便于更复杂的线路图。也可以参见上述PCT/US95/14885的图3D，它论述了结合弹性接触元件的一种线路形式。
另一实施例
显示，可以很大程度地控制根据本发明制作的弹性接触元件的尺寸、形状和取向。
图5表示具有一基端502，一接触端504和它们之间的主体部分506的弹性接触元件(相当于120)。在这个例子中，主体部分在X-Y平面内(平行于弹性接触元件制作其上的元件的表面)延展，以使接触端504为不同于基端502的X，Y和Z坐标。换句话说，在主体部分506在Y-轴上移动时，它也在X-轴上移动(缓步)。
在用于探测半导体器件时，特别是用于执行速度检测时，该弹性接触元件已控制了阻抗这是很有利的。
受控阻抗
图6A-6C表示根据本发明在弹性接触元件中实现受控阻抗的技术。
在第一步中，最好见图6A，弹性接触元件600(相当于400)以其基端602(相当于402)固定到电子元件610(相当于410)的端子612上。其接触顶端604(相当于404)高出元件610的表面。该弹性接触结构在其基端和顶端之间具有一主体部分606(相当于406)。
在下一步中，最好见图6B，弹性接触元件的顶端604被掩模(没有示出)，适当薄(例如：1-10μm)的绝缘层620，例如聚对苯二甲基，以例如汽相淀积法淀积到弹性接触元件除顶端604外的表面及电子元件的毗邻表面上。
在下一步中，最好见图6B，在弹性接触元件的顶端604仍被掩蔽时(没有示出)，适当薄(例如：小于0.25mm)的导电材料层622，例如上述的任何导电金属材料，例如以溅射法淀积到弹性接触元件除顶端604外的表面及电子元件的毗邻表面上。最后，露出顶端604。结果，弹性接触元件的主体部分606被一导电层622包封，两者间有绝缘层620。
该导电层622适于接地，以用作地平面，并控制所得到的弹性接触元件的阻抗。例如，最好见图6B，元件610具有一个电接地的第二端子614。该端子614适于与弹性接触元件的顶端604一起在敷绝缘层620之前被掩蔽，以使后来的导电层622也将淀积于其上，并与其连接。
显然，薄层620和622的厚度只需足以达到连续就可以了，并在控制阻抗之后提供定位，而且不能太厚以免妨碍弹性接触元件的机械操作。图6B和图6C并非按比例的示图。
虽然在附图和前面的文字描述部分详细说明和描述了本发明，但是，已描述的和未限制在特征部分的应认为是相同的-应该明白，已显示的和描述的优选实施例和在本发明精神内所作的改变和修改都将要求保护。无疑，对本发明所属领域普通技术人员来说，可以就上述“主题”做出各种“变化”，而这些变化将落在所公开的本发明范围内。
例如，所得到的弹性接触元件可以通过热处理以加强它们的机械特性。而且，对弹性接触元件与元件之间的永久连接实施的任何加热可能有利于“热处理”弹性接触元件的材料。

Claims (25)

1.在衬底上制作弹性接触元件的方法，包括：
在衬底表面敷上至少一层掩模材料，并构图该掩模层，使其具有从衬底上的区域延伸到衬底表面的上方并能侧向和/或横向偏离该区域的位置的开口；
把至少一层导电金属材料淀积到该开口里面；和
去掉掩模材料，以使留下的导电金属材料形成在衬底表面延伸的独立式的接触元件，每个接触元件都具有一个固定到衬底的一个区域上的基端，和用于实现电连接的独立式的顶端。
2.根据权利要求1所述的方法，还包括：
在淀积至少一层导电金属材料之前，形成(seeding)在至少一层掩模材料中的开口。
3.根据权利要求1所述的方法，其特征在于：
衬底是电子元件。
4.根据权利要求1所述的方法，其特征在于：
衬底是半导体器件。
5.根据权利要求1所述的方法，其特征在于：
衬底是半导体晶片。
6.根据权利要求1所述的方法，还包括：
在至少一层掩模层中形成开口，以使所得到的弹性接触元件的基端具有比所得到的弹性接触元件的顶端大的横截面。
7.在至少一个第一电子元件和一第二电子元件之间实现电连接的方法，包括：
直接在至少一个第一电子元件上制作弹性接触元件，所述弹性接触元件每个都具有一个位于该至少一个第一电子元件的表面上方空间的顶端；和
把该至少一个第一电子元件与一第二电子元件组合在一起，以使该弹性接触元件的顶端与该第二电子元件上的相应的端子电接触。
8.根据权利要求7所述的方法，还包括：
在该至少一个电子元件和该第二电子元件之间保持压力。
9.根据权利要求7所述的方法，其特征在于：
所述至少一个第一电子元件是至少一个有源半导体器件；和
所述第二电子元件是一试验衬底；
还包括：
在保持该弹性接触的顶端与该第二电子元件的端子电接触时，给该有源半导体器件加电。
10.根据权利要求9所述的方法，其特征在于：
所述至少一个有源半导体器件存在于半导体晶片上。
11.根据权利要求7所述的方法，其特征在于：
所述至少一个第一电子元件是至少一个存储器芯片。
12.根据权利要求7所述的方法，还包括：
把所述弹性接触元件的顶端与所述第二电子元件的相应端子连接起来。
13.一种微电子弹性接触元件，包括：
一长度为“L”的拉长部件，具有一基端部分，一与该基端部分相对的接触端部分，和与该基端和接触端部分相邻的主体部分；
该接触端部分在第一方向偏离主体部分的距离为“d1”；
该基端部分在与第一方向相反的第二方向偏离主体部分的距离为“d2”；
其特征在于：
该基端部分固定到第一电子元件的一个区域上；
该顶端适用于实现与第二电子元件的压力连接。
14.根据权利要求13所述的微电子弹性接触元件，其特征在于：
所述弹性接触元件在基端部分比在接触端部分厚。
15.根据权利要求13所述的微电子弹性接触元件，其特征在于：
所述弹性接触元件在基端部分比在接触端部分宽。
16.根据权利要求13所述的微电子弹性接触元件，其特征在于：
长度“L”在10～1000密耳范围内。
17.根据权利要求16所述的微电子弹性接触元件，其特征在于：
长度“L”在60～100密耳范围内。
18.根据权利要求13所述的微电子弹性接触元件，其特征在于：
所述拉长部件具有等于“d1”，“d2”和该部件的主体部分的厚度之和的全高“H”；及
该全高“H”在4～40密耳范围内。
19.根据权利要求18所述的微电子弹性接触元件：其特征在于：
所述全高“H”在5～12密耳范围内。
20.根据权利要求13所述的微电子弹性接触元件，其特征在于所述弹性接触元件具有选自下列材料的一层或多层材料：
镍，及其合金；
铜，钴，铁，及它们的合金；
金(特别是硬质金)和银；
铂系元素；
贵重金属；
半贵重金属及其合金，特别是钯系元素及其合金；
钨，钼和其它难熔金属及它们的合金；和
锡，铅，铋，铟及它们的合金。
21.在其一个表面上具有大量端子(焊盘)的半导体器件，还包括：
直接制作在所述半导体器件的表面上的大量弹性接触元件，每个弹性接触元件都具有在相应的一个焊盘上的一个基端，和配置在衬底表面上方并能侧向和/或横向偏离所述基端的一个顶端。
22.根据权利要求21所述的半导体器件，其特征在于：
每个弹性接触元件都具有一个毗邻所述基端的尾部；和
该弹性接触元件的尾部用以实现导电路径(routing)。
23.根据权利要求21所述的半导体器件，其特征在于：
该弹性接触元件是由下列方法制成的：
在所述半导体器件的表面上敷上至少一层掩模材料；
构图该掩模层，使其具有从半导体器件上的焊盘延伸到该半导体表面的上方并能侧向和/或横向偏离该焊盘的位置的开口；
把至少一层导电金属材料淀积到所述开口里面；和
去掉掩模层以使留下的导电金属材料形成独立式的弹性接触元件。
24.一种半导体晶片，包括：
其上的大量半导体器件；
直接制作在存在于该半导体晶片上的所述半导体器件上的大量弹性接触元件；
其特征在于：所述存在于该半导体晶片上的半导体器件，在其从半导体晶片分开之前，准备用于老化和试验。
25.根据权利要求24所述的半导体晶片，其特征在于，所述弹性接触元件是由下列方法制成：
在所述半导体晶片的表面上敷上至少一层掩模材料；
构图该掩模层，使其具有从位于该半导体晶片上的半导体器件上的焊盘延伸到该半导体晶片的表面上方并能侧向和/或横向偏离焊盘的位置的开口；
把至少一层导电金属材料淀积到所述开口里面；和
去掉该掩模层，以使留下的导电金属材料形成独立式的弹性接触元件。
CNB971905673A 1996-05-17 1997-05-15 微电子弹性接触元件 Expired - Fee Related CN1134667C (zh)

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US518996P 1996-05-17 1996-05-17
US60/005,189 1996-05-17
PCT/US1996/008107 WO1996037332A1 (en) 1995-05-26 1996-05-24 Fabricating interconnects and tips using sacrificial substrates
WOPCT/US96/08107 1996-05-24
US2086996P 1996-06-27 1996-06-27
US60/020,869 1996-06-27
US2440596P 1996-08-22 1996-08-22
US60/024,405 1996-08-22
US2455596P 1996-08-26 1996-08-26
US60/024,555 1996-08-26
US3069796P 1996-11-13 1996-11-13
US60/030,697 1996-11-13
US3266696P 1996-12-13 1996-12-13
US60/032,666 1996-12-13
US3405396P 1996-12-31 1996-12-31
US60/034,053 1996-12-31
US08/784,862 US6064213A (en) 1993-11-16 1997-01-15 Wafer-level burn-in and test
US08/784,862 1997-01-15
US08/788,740 US5994152A (en) 1996-02-21 1997-01-24 Fabricating interconnects and tips using sacrificial substrates
US08/788,740 1997-01-24
US08/802,054 US6482013B2 (en) 1993-11-16 1997-02-18 Microelectronic spring contact element and electronic component having a plurality of spring contact elements
US08/802,054 1997-02-18
US81946497A 1997-03-17 1997-03-17
US08/819,464 1997-03-17
US08/852,152 1997-05-06
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Publication number Priority date Publication date Assignee Title
CN1900725B (zh) * 1998-12-02 2010-10-06 佛姆法克特股份有限公司 光刻接触元件
CN101354405B (zh) * 2002-02-05 2012-09-19 飞而康公司 测试电子装置用电接触元件的制造方法及电接触元件

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CN1197514A (zh) 1998-10-28
WO1997043654A1 (en) 1997-11-20
DE69735101D1 (de) 2006-04-06
DE69735101T8 (de) 2007-02-01
CN1225724A (zh) 1999-08-11
WO1997043656A2 (en) 1997-11-20
EP0839323B1 (en) 2004-08-25
EP0839323A1 (en) 1998-05-06
EP0898712A2 (en) 1999-03-03
EP0839321A1 (en) 1998-05-06
CN1134667C (zh) 2004-01-14
CN1272632C (zh) 2006-08-30
JP2002509604A (ja) 2002-03-26
WO1997043656A3 (en) 1998-03-12
EP0839321B1 (en) 2006-01-11
EP0898712B1 (en) 2003-08-06
AU3073797A (en) 1997-12-05
CN1145802C (zh) 2004-04-14
WO1997043653A1 (en) 1997-11-20
DE69735101T2 (de) 2006-09-21

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