CN118613977A - 半导体激光元件及半导体激光元件的制造方法 - Google Patents

半导体激光元件及半导体激光元件的制造方法 Download PDF

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Publication number
CN118613977A
CN118613977A CN202380018928.XA CN202380018928A CN118613977A CN 118613977 A CN118613977 A CN 118613977A CN 202380018928 A CN202380018928 A CN 202380018928A CN 118613977 A CN118613977 A CN 118613977A
Authority
CN
China
Prior art keywords
semiconductor
groove
stacked structure
semiconductor laser
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380018928.XA
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English (en)
Chinese (zh)
Inventor
中津浩二
大川内良彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of CN118613977A publication Critical patent/CN118613977A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN202380018928.XA 2022-01-31 2023-01-18 半导体激光元件及半导体激光元件的制造方法 Pending CN118613977A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022012749A JP2023111096A (ja) 2022-01-31 2022-01-31 半導体レーザ素子及び半導体レーザ素子の製造方法
JP2022-012749 2022-01-31
PCT/JP2023/001298 WO2023145562A1 (ja) 2022-01-31 2023-01-18 半導体レーザ素子及び半導体レーザ素子の製造方法

Publications (1)

Publication Number Publication Date
CN118613977A true CN118613977A (zh) 2024-09-06

Family

ID=87471444

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380018928.XA Pending CN118613977A (zh) 2022-01-31 2023-01-18 半导体激光元件及半导体激光元件的制造方法

Country Status (4)

Country Link
US (1) US20240380180A1 (https=)
JP (1) JP2023111096A (https=)
CN (1) CN118613977A (https=)
WO (1) WO2023145562A1 (https=)

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4963060B2 (ja) * 2005-11-30 2012-06-27 シャープ株式会社 窒化物系半導体レーザ素子及びその製造方法
JP2008021885A (ja) * 2006-07-13 2008-01-31 Matsushita Electric Ind Co Ltd 半導体ウェハ、半導体素子、半導体ウェハの製造方法、半導体素子の製造方法
US20100085996A1 (en) * 2006-10-17 2010-04-08 Sanyo Electric Co., Ltd. Nitride semiconductor laser device and its manufacturing method
JP4573863B2 (ja) * 2006-11-30 2010-11-04 三洋電機株式会社 窒化物系半導体素子の製造方法
JP4614988B2 (ja) * 2007-05-31 2011-01-19 シャープ株式会社 窒化物系半導体レーザ素子及びその製造方法
JP4446315B2 (ja) * 2007-06-06 2010-04-07 シャープ株式会社 窒化物系半導体レーザ素子の製造方法
JP2009004524A (ja) * 2007-06-21 2009-01-08 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子及び窒化物系半導体レーザ素子の作製方法
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2010258050A (ja) * 2009-04-22 2010-11-11 Sanyo Electric Co Ltd 半導体レーザ素子の製造方法
JP5245904B2 (ja) * 2009-02-23 2013-07-24 日亜化学工業株式会社 半導体レーザ素子の製造方法
JP2012124273A (ja) * 2010-12-07 2012-06-28 Rohm Co Ltd 半導体レーザ素子
JP5689297B2 (ja) * 2010-12-07 2015-03-25 ローム株式会社 半導体レーザ素子およびその製造方法
US20120189029A1 (en) * 2010-12-07 2012-07-26 Rohm Co., Ltd. Semiconductor laser device
JP2012178508A (ja) * 2011-02-28 2012-09-13 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
DE102015116712B4 (de) * 2015-10-01 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
DE102016113071A1 (de) * 2016-07-15 2018-01-18 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
WO2020137146A1 (ja) * 2018-12-28 2020-07-02 ローム株式会社 半導体レーザ素子
JP6960480B2 (ja) * 2019-02-05 2021-11-05 シャープ株式会社 半導体レーザ素子

Also Published As

Publication number Publication date
WO2023145562A1 (ja) 2023-08-03
JP2023111096A (ja) 2023-08-10
US20240380180A1 (en) 2024-11-14

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