JP2023111096A - 半導体レーザ素子及び半導体レーザ素子の製造方法 - Google Patents

半導体レーザ素子及び半導体レーザ素子の製造方法 Download PDF

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Publication number
JP2023111096A
JP2023111096A JP2022012749A JP2022012749A JP2023111096A JP 2023111096 A JP2023111096 A JP 2023111096A JP 2022012749 A JP2022012749 A JP 2022012749A JP 2022012749 A JP2022012749 A JP 2022012749A JP 2023111096 A JP2023111096 A JP 2023111096A
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Japan
Prior art keywords
semiconductor
groove
laminated structure
semiconductor laser
substrate
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Pending
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JP2022012749A
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English (en)
Japanese (ja)
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JP2023111096A5 (https=
Inventor
浩二 中津
Koji Nakatsu
良彦 大川内
Yoshihiko Okawauchi
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Nuvoton Technology Corp
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Nuvoton Technology Corp
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Application filed by Nuvoton Technology Corp filed Critical Nuvoton Technology Corp
Priority to JP2022012749A priority Critical patent/JP2023111096A/ja
Priority to PCT/JP2023/001298 priority patent/WO2023145562A1/ja
Priority to CN202380018928.XA priority patent/CN118613977A/zh
Publication of JP2023111096A publication Critical patent/JP2023111096A/ja
Priority to US18/781,540 priority patent/US20240380180A1/en
Publication of JP2023111096A5 publication Critical patent/JP2023111096A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2022012749A 2022-01-31 2022-01-31 半導体レーザ素子及び半導体レーザ素子の製造方法 Pending JP2023111096A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022012749A JP2023111096A (ja) 2022-01-31 2022-01-31 半導体レーザ素子及び半導体レーザ素子の製造方法
PCT/JP2023/001298 WO2023145562A1 (ja) 2022-01-31 2023-01-18 半導体レーザ素子及び半導体レーザ素子の製造方法
CN202380018928.XA CN118613977A (zh) 2022-01-31 2023-01-18 半导体激光元件及半导体激光元件的制造方法
US18/781,540 US20240380180A1 (en) 2022-01-31 2024-07-23 Semiconductor laser element and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022012749A JP2023111096A (ja) 2022-01-31 2022-01-31 半導体レーザ素子及び半導体レーザ素子の製造方法

Publications (2)

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JP2023111096A true JP2023111096A (ja) 2023-08-10
JP2023111096A5 JP2023111096A5 (https=) 2025-01-31

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JP2022012749A Pending JP2023111096A (ja) 2022-01-31 2022-01-31 半導体レーザ素子及び半導体レーザ素子の製造方法

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US (1) US20240380180A1 (https=)
JP (1) JP2023111096A (https=)
CN (1) CN118613977A (https=)
WO (1) WO2023145562A1 (https=)

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007180522A (ja) * 2005-11-30 2007-07-12 Sharp Corp 窒化物系半導体レーザ素子及びその製造方法
JP2008021885A (ja) * 2006-07-13 2008-01-31 Matsushita Electric Ind Co Ltd 半導体ウェハ、半導体素子、半導体ウェハの製造方法、半導体素子の製造方法
WO2008047751A1 (en) * 2006-10-17 2008-04-24 Sanyo Electric Co., Ltd. Nitride semiconductor laser device and its manufacturing method
JP2008160070A (ja) * 2006-11-30 2008-07-10 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2008300584A (ja) * 2007-05-31 2008-12-11 Sharp Corp 窒化物系半導体レーザ素子及びその製造方法
JP2008305911A (ja) * 2007-06-06 2008-12-18 Sharp Corp 窒化物系半導体レーザ素子及びその製造方法
JP2009004524A (ja) * 2007-06-21 2009-01-08 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子及び窒化物系半導体レーザ素子の作製方法
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2010199139A (ja) * 2009-02-23 2010-09-09 Nichia Corp 半導体レーザ素子の製造方法
JP2010258050A (ja) * 2009-04-22 2010-11-11 Sanyo Electric Co Ltd 半導体レーザ素子の製造方法
JP2012124274A (ja) * 2010-12-07 2012-06-28 Rohm Co Ltd 半導体レーザ素子およびその製造方法
JP2012124273A (ja) * 2010-12-07 2012-06-28 Rohm Co Ltd 半導体レーザ素子
JP2012178508A (ja) * 2011-02-28 2012-09-13 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2018530151A (ja) * 2015-10-01 2018-10-11 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品
WO2020137146A1 (ja) * 2018-12-28 2020-07-02 ローム株式会社 半導体レーザ素子
JP2020127003A (ja) * 2019-02-05 2020-08-20 シャープ株式会社 半導体レーザ素子
US20200321749A1 (en) * 2016-07-15 2020-10-08 Osram Opto Semiconductors Gmbh Semiconductor laser diode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120189029A1 (en) * 2010-12-07 2012-07-26 Rohm Co., Ltd. Semiconductor laser device

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007180522A (ja) * 2005-11-30 2007-07-12 Sharp Corp 窒化物系半導体レーザ素子及びその製造方法
JP2008021885A (ja) * 2006-07-13 2008-01-31 Matsushita Electric Ind Co Ltd 半導体ウェハ、半導体素子、半導体ウェハの製造方法、半導体素子の製造方法
WO2008047751A1 (en) * 2006-10-17 2008-04-24 Sanyo Electric Co., Ltd. Nitride semiconductor laser device and its manufacturing method
JP2008160070A (ja) * 2006-11-30 2008-07-10 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2008300584A (ja) * 2007-05-31 2008-12-11 Sharp Corp 窒化物系半導体レーザ素子及びその製造方法
JP2008305911A (ja) * 2007-06-06 2008-12-18 Sharp Corp 窒化物系半導体レーザ素子及びその製造方法
JP2009004524A (ja) * 2007-06-21 2009-01-08 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子及び窒化物系半導体レーザ素子の作製方法
JP2009200478A (ja) * 2008-01-21 2009-09-03 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2010199139A (ja) * 2009-02-23 2010-09-09 Nichia Corp 半導体レーザ素子の製造方法
JP2010258050A (ja) * 2009-04-22 2010-11-11 Sanyo Electric Co Ltd 半導体レーザ素子の製造方法
JP2012124274A (ja) * 2010-12-07 2012-06-28 Rohm Co Ltd 半導体レーザ素子およびその製造方法
JP2012124273A (ja) * 2010-12-07 2012-06-28 Rohm Co Ltd 半導体レーザ素子
JP2012178508A (ja) * 2011-02-28 2012-09-13 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
JP2018530151A (ja) * 2015-10-01 2018-10-11 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品
US20200321749A1 (en) * 2016-07-15 2020-10-08 Osram Opto Semiconductors Gmbh Semiconductor laser diode
WO2020137146A1 (ja) * 2018-12-28 2020-07-02 ローム株式会社 半導体レーザ素子
JP2020127003A (ja) * 2019-02-05 2020-08-20 シャープ株式会社 半導体レーザ素子

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CN118613977A (zh) 2024-09-06
WO2023145562A1 (ja) 2023-08-03
US20240380180A1 (en) 2024-11-14

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