CN115321987A - 氮化铝烧结体及包括其的半导体制造装置用构件 - Google Patents
氮化铝烧结体及包括其的半导体制造装置用构件 Download PDFInfo
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- CN115321987A CN115321987A CN202211132218.3A CN202211132218A CN115321987A CN 115321987 A CN115321987 A CN 115321987A CN 202211132218 A CN202211132218 A CN 202211132218A CN 115321987 A CN115321987 A CN 115321987A
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- aluminum nitride
- sintered body
- nitride sintered
- semiconductor manufacturing
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 101
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000010936 titanium Substances 0.000 claims abstract description 49
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 40
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 38
- 239000012535 impurity Substances 0.000 claims abstract description 23
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000919 ceramic Substances 0.000 claims description 37
- 239000000843 powder Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 18
- 238000005245 sintering Methods 0.000 claims description 12
- 238000007689 inspection Methods 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- -1 aluminate compound Chemical class 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
氮化铝烧结体包含1~5重量%的氧化钇(Y2O3)、10~100ppm的钛(Ti)及余份的氮化铝(AlN)。由此,可以改善高温下的体积电阻值及导热率,抑制半导体制造步骤中杂质的发生。
Description
本申请是申请日为2018年5月10日、申请号为201880035936.4且发明名称为“氮化铝烧结体及包括其的半导体制造装置用构件”的中国发明专利申请的分案申请。本申请要求享有KR10-2017-0083064的优先权。
技术领域
本发明涉及氮化铝烧结体及包括其的半导体制造装置用构件。
背景技术
在半导体制造装置用构件中,在半导体制造步骤中使芯片固定的静电吸盘和在化学气相沉积(CVD)步骤等,使芯片固定的同时进行加热的半导体制造用加热器等中,正在利用陶瓷物质。
特别是包含氮化铝的陶瓷物质具有高导热系数,因而可以应用于对基板加热的陶瓷加热器。该陶瓷加热器具备陶瓷主体、用于在该主体内部生成电浆的基准电位层和用于发生热的发热体。因此,包含氮化铝的陶瓷物质要求优秀的电气绝缘性及导热率。
进而,在该陶瓷加热器中,要求作为利用静电力的静电吸盘的功能,因而要求在高温下的高体积电阻值。例如,构成该陶瓷加热器的陶瓷物质在500℃温度下,需要具有1.0×107Ω·cm以上的体积电阻。
但是,诸如氮化铝的陶瓷物质具有随着温度增加而减小的体积电阻。因此,就利用诸如氮化铝的陶瓷物质的陶瓷加热器而言,其温度越增加,该陶瓷主体的体积电阻值越减小,从而在该基准电位层及发热层之间会发生泄漏电流。进而,该陶瓷加热器作为静电吸盘的功能会恶化。
因此,为了在高温下保持该陶瓷物质的体积电阻值,在构成该陶瓷主体的氮化铝中添加诸如钛、镁或硅的金属系列的添加剂。但是,该添加剂使陶瓷加热器的导热系数低下,使该陶瓷加热器的温度均一度恶化。进而,当由包含该添加剂的氮化铝构成的陶瓷加热器应用于半导体制造装置时,在该半导体制造装置的运转期间,存在该添加剂起到污染源作用的问题。
发明内容
(一)要解决的技术问题
因此,本发明目的是提供一种能够在高温下保持体积电阻值的同时具有优秀的导热率,并能够抑制杂质的发生的氮化铝烧结体。
本发明另一目的是提供一种包括该氮化铝烧结体的半导体制造装置用构件。
(二)技术方案
为了达成本发明目的,本发明一个实施例的氮化铝烧结体包含1~5重量%的氧化钇(Y2O3);10~100ppm的钛(Ti);及余份的氮化铝(AlN)。
在本发明一个实施例中,该钛相对于该氧化钇的重量比可以为0.0002~0.0031。
本发明一个实施例的氮化铝烧结体可以在500℃的温度及500V/mm电场条件下,具有3.0×108~5.0×109Ω·cm范围的体积电阻值。
本发明一个实施例的氮化铝烧结体可以具有100W/mK以上的导热率。
本发明一个实施例的氮化铝烧结体在杂质检查中杂质含量可以为30ppb以下。
本发明一个实施例的半导体制造装置用构件包括:加热板(heating plate),其由包含1~5重量%的氧化钇(Y2O3)、10~100ppm的钛(Ti)及余份的氮化铝(AlN)的氮化铝烧结体构成;导电性组件,其埋设于该加热板;及电力供应部,其连接于该导电性组件。
在本发明一个实施例中,该钛相对于该氧化钇的重量比可以为0.0002~0.0031。
在本发明一个实施例中,该氮化铝烧结体可以在500℃的温度及500V/mm电场条件下具有3.0×108~5.0×109Ω·cm范围的体积电阻值。
在本发明一个实施例中,该氮化铝烧结体可以具有100W/mK以上的导热率。
在本发明一个实施例中,该氮化铝烧结体在杂质检查中杂质含量可以为30ppb以下。
(三)有益效果
本发明的氮化铝烧结体包含1~5重量%的氧化钇(Y2O3)、10~100ppm的钛(Ti)及余份的氮化铝(AlN)。因此,含有少量钛元素及优化的氧化钇的氮化铝烧结体,不仅可以保持高温下的体积电阻值,而且可以同时确保优秀的导热率。
进而,当利用该氮化铝烧结体的半导体制造构件在半导体制造步骤中使用时,起到污染源作用的钛的含量被限制,从而可以减少该制造步骤中不良的发生。
附图说明
图1是用于说明本发明一个实施例的半导体制造装置用构件的剖面图。
具体实施方式
下面参照附图,对本发明实施例的氮化铝烧结体及包括其的半导体制造装置用构件进行详细说明。本发明可以施加多样的变更,可以具有多种形态,将在图中例示性列举特定实施例并在正文中详细说明。但是,这并非要将本发明限定于特定的揭露形态,应理解为包括本发明的思想及技术范围内包含的所有变更、均等物以及替代物。在说明各图的同时,针对类似的构成要素使用了类似的组件符号。在图中,为了有助于本发明的明确性,结构物的尺寸比实际放大而进行图示。
第一、第二等术语可以用于说明多样构成要素,但该构成要素不得由该术语所限定。该术语只用于将一个构成要素区别于其他构成要素的目的。例如,在不超出本发明的申请专利范围的同时,第一构成要素可以命名为第二构成要素,类似地,第二构成要素也可以命名为第一构成要素。
本申请中使用的术语只用于说明特定的实施例,并非要限定本发明之意。只要在文理上未明确表示不同,单数的表现包括复数的表现。在本申请中,「包括」或「具有」等术语,应理解为只是要指定说明书上记载的特征、数字、步骤、动作、构成要素、部件或他们的组合的存在,不预先排除一个或其上的其他特征或数字、步骤、动作、构成要素、部件或他们的组合的存在或附加可能性。
只要未不同地定义,包含技术性或科学性术语在内,在此使用的所有术语具有与本发明所属技术领域具有通常知识者一般理解的内容相同的意义。与一般使用的词典定义的内容相同的术语,应解释为具有与相关技术的文理上所具有的意义一致的意义。只要在本申请中未明确定义,不得解释为理想性地,或过度形式上的意义。
氮化铝烧结体
本发明的氮化铝烧结体包含氧化钇、钛及氮化铝。
本发明的烧结体中包含的氮化铝(AlN)具有高导热性及高电气绝缘性。因此,该氮化铝(AlN)起到使该氮化铝烧结体具有高导热性及高绝缘性特性的作用。
因此,包含该氮化铝的氮化铝烧结体可以应用于在使芯片固定的同时进行加热的静电吸盘型加热板。
根据本发明的一个实施例,作为该氮化铝的原料粉末,可以使用高纯度(99%以上)还原氮化铝粉末。
本发明的氮化铝烧结体包含氧化钇(Y2O3)。氧化钇重量%是确认利用扫描电子显微镜或透射电子显微镜中加装的能量色散X射线分光镜(Energy Dispersive X-raySpectroscope)测量氮化铝烧结体时检测的元素量的方法。氧化钇重量%可以将检测的钇含量换算成氧化物进行计算。
该氧化钇使得该氮化铝烧结体具有预定值以上的导热率。即,氧化钇执行可以弥补添加钛导致的导热率减小的功能。
另一方面,该氧化钇起到在氮化铝烧结体的制造过程中帮助各成分之间的烧结的作用。例如,当钇以氧化物的形态添加时,可以与氮化铝烧结体粉末中包含的氧及铝进行反应,以铝酸盐化合物存在。该铝酸盐化合物具有相对较低的烧成温度。结果,该氧化钇利用与烧结体制造所需的其他元素的反应,使烧结更容易,起到降低烧成过程时的烧成温度的作用。因此,本发明的氮化铝烧结体通过包含该氧化钇,可以容易地进行烧结步骤,提高烧结体的致密性。
该氧化钇相对于全体氮化铝烧结体重量,可以具有1~5重量%范围的组成比。
当该氧化钇添加不足适量时,氮化铝烧结体的导热率恶化。因此,该氮化铝烧结体在用作加热器方面有困难。
另一方面,当该氧化钇添加超过适量时,氮化铝烧结体的机械强度会低下。即使该氧化钇超过适量,对该氮化铝烧结体的体积电阻也没有特别的益处。进而,会发生使该氮化铝烧结体的诸如明度及彩度的外观恶化的问题。
本发明的氮化铝烧结体包含钛(Ti)。该钛(Ti)相对于全体氮化铝烧结体重量,可以具有10~100ppm范围的组成比。
该钛起到使该氮化铝烧结体的体积电阻值增加的作用。即,当在该氮化铝中一同添加氧化钇和钛而制造烧结体时,烧结体的体积电阻值在500℃的温度及500V/mm电场条件下,可以具有3.0×108~5.0×109Ω·cm范围。因此,当氮化铝烧结体应用于陶瓷加热器,该陶瓷加热器的温度增加时,该陶瓷加热器保持预定范围的体积电阻值,从而可以抑制该陶瓷加热器可能发生的泄漏电流。
当该烧结体中添加的钛的含量超过100ppm(0.01重量%)时,会导致氮化铝的颜色变化,诸如硬度及导热率等的氮化铝烧结体的物性恶化。特别是钛引起的氮化铝烧结体的体积电阻增加效果不完善,使得氮化铝烧结体的体积电阻不再增加,只是保持3×109Ω·cm~4.0×109Ω·cm范围的体积电阻。
进一步地,由于钛的过量添加,氮化铝烧结体在高温状态不以氮化钛(TiN)相独立地存在,而是相互连接,体积电阻值还会急剧减小。
另一方面,对杂质测量方法进行说明。根据该杂质测量方法,将制品浸于诸如异丙醇(IPA)等的液体,摩擦该制品表面预定时间。然后,对该液体中存在的杂质个数进行计数。特别是在半导体步骤中,钛(Ti)元素与杂质相应,在半导体步骤时,可以起到步骤污染源的作用。
此时,当根据杂质测量方法而实施杂质检查时,该杂质的个数超过50ppb,当包含该烧结体的单元应用于半导体制造装置时,半导体制造装置在执行步骤时,因杂质导致的污染问题会很严重。
另外,当钛的含量不足10ppm(0.001重量)时,由于氧化钛添加过少的极少量,存在氮化铝烧结体在高温测量条件下低到难以测量体积电阻值的程度的问题。
因此,该钛(Ti)相对于全体氮化铝烧结体重量,可以具有10~100ppm范围的组成比。
氮化铝烧结体的制造方法
以氮化铝烧结体的总重量为基准,准备混合了氧化钇(Y2O3)粉末、氧化钛(TiO2)粉末及余份的氮化铝(AlN)粉末的氮化铝烧结体粉末。此时,作为该氮化铝粉末,可以准备高纯度还原氮化铝粉末。此时,氧化钇(Y2O3)粉末、氧化钛(TiO2)粉末及余份的氮化铝(AlN)的组成比可以调节。
然后,以干式或湿式混合该氮化铝烧结体粉末。
根据本发明的一个实施例,该混合可以利用湿式混合方法执行。此时,作为溶剂,例如可以使用无水乙醇、异丙醇等。混合该氮化铝烧结体粉末后,萃取浆料,利用喷雾干燥法等进行干燥,从而收得混合粉末。例如,该混合物在干燥机中以约60~100℃进行干燥。
利用筛子,对该氮化铝烧结体粉末实施筛分后,将该氮化铝烧结体粉末烧成为适宜形状的成型体。烧成后,烧结该氮化铝烧结体粉末。根据本发明的一个实施例,烧结在约1,700~2,000℃温度下灯烧成约30分钟以上而实现。例如,将该氮化铝烧结体粉末装入石墨模具,将其在高温加压烧结炉中,在氮气气氛下的约1,850℃烧结温度下,烧成约3小时时间后冷却,形成氮化铝烧结体。
下面通过多样实施例及比较例,更详细说明本发明的氮化铝烧结体。
实施例1
以氮化铝烧结体粉末的总重量为基准,准备氮化铝粉末95%、氧化钇粉末1%及氧化钛粉末。此时,氧化钇的重量%意指在将含钇的氢化物、氯化物及其他形态的前体重量换算为氧化钇重量的值中再加上添加的氧化钇粉末重量后计算的值。
作为该氮化铝粉末,准备了高纯度还原氮化铝粉末。在该还原氮化铝粉末中,除氮之外的纯度为99.9%以上,平均粒径约1.3μm左右。
作为该氧化钇粉末,使用纯度99.9%以上、平均粒径约0.8μm左右,作为该氧化钛粉末,使用纯度99.9%以上、平均粒径约1.0μm左右。
混合这些粉末,以无水乙醇为溶剂,利用以尼龙制造的盆及氧化铝球,进行20小时时间的湿式混合。混合后,萃取浆料,在干燥机中以80℃进行干燥。针对完成干燥的粉末,利用80目筛子实施过筛。将结束筛分的粉末装入直径Φ210mm的石墨模具,将其在高温加压烧结炉中,在加压机压力15Mpa、氮气气氛压力0.1Mpa下,在1,850℃的烧结温度下烧成3小时后冷却。
该氧化钇重量%及钛的重量(ppm)按下面方法测量。该方法是对利用扫描电子显微镜或透射电子显微镜中加装的能量色散X射线分光镜(Energy Dispersive X-raySpectroscope)测量烧结完成的氮化铝烧结体时检测的元素量进行确认的方法。氧化钇重量%是将检测的钇的含量换算为氧化物进行计算。另外,钛的元素量通过ICP MS分析进行测量。
实施例2~7及比较例1~9
在实施例2~7及比较例1~9中,利用与实施例1相同的方法,制造氮化铝烧结体,且氮化铝、氧化钇及钛的组成比如下表所示调节。
表1
氮化铝烧结体的特性评估
评估根据该实施例1~7及比较例1~9制造的氮化铝烧结体的特性,将其结果显示于下表2中。
表2
类别 | 体积电阻400℃,(Ω·cm) | 体积电阻500℃,(Ω·cm) | 杂质检查(ppb) | 导热率(W/mK) |
实施例1 | 1.0×10<sup>9</sup> | 3.0×10<sup>8</sup> | 13 | 125 |
实施例2 | 2.0×10<sup>9</sup> | 4.0×10<sup>8</sup> | 20 | 125 |
实施例3 | 4.0×10<sup>11</sup> | 3.0×10<sup>9</sup> | 18 | 143 |
实施例4 | 5.0×10<sup>11</sup> | 4.0×10<sup>9</sup> | 24 | 143 |
实施例5 | 1.0×10<sup>11</sup> | 3.0×10<sup>9</sup> | 16 | 174 |
实施例6 | 5.0×10<sup>11</sup> | 5.0×10<sup>9</sup> | 26 | 170 |
实施例7 | 2.0×10<sup>11</sup> | 4.0×10<sup>9</sup> | 13 | 178 |
比较列1 | 2.0×10<sup>11</sup> | 4.0×10<sup>9</sup> | 332 | 152 |
比较列2 | 1.5×10<sup>7</sup> | 3.0×10<sup>9</sup> | 56 | 165 |
比较列3 | 1.0×10<sup>7</sup> | × | 15 | 177 |
比较列4 | × | × | 13 | 86 |
比较列5 | 1.0×10<sup>7</sup> | <sup>×</sup> | 17 | 90 |
比较列6 | 6.0×10<sup>7</sup> | × | 16 | 84 |
比较列7 | 7.0×10<sup>7</sup> | × | 17 | 89 |
比较列8 | 3.0×10<sup>7</sup> | <sup>×</sup> | 15 | 172 |
比较列9 | 3.0×10<sup>7</sup> | <sup>×</sup> | 15 | 178 |
×:意指不可测量
特性分析方法
体积电阻:将根据实施例1~7及比较例1~9制造的氮化铝烧结体制作成长50mm×宽50mm×厚度1mm的试片,使电极形状为主电极直径26mm、保护电极直径38mm,以施加电场为基准,设置达到500V/mm的施加电压,记录将电压施加时间保持60秒后获得的体积电阻值。
杂质检查方法:将烧结体试片浸于诸如IPA等的液体,摩擦该试片表面10分钟时间。然后,计数该液体中存在的杂质个数。
导热率测量方法:对氮化铝烧结体试片的表面进行黑化处理后,利用激光闪光法算出扩散系数。利用该扩散系数,根据式(1)导出导热率。
(式1)密度×比热×扩散系数=导热率(W/mK)
如以上所作的说明,确认了本发明实施例1~7的氮化铝烧结体在高温(500℃)下的体积电阻值为3.0×108~5.0×109Ω·cm,杂质检查时不足50ppb,导热率125W/mK以上,适合于加热器构件。
另一方面,不添加氧化钇时(比较例4~7),导热率过低,不足100W/mK,该氮化铝烧结体不适合用作加热器构件。
另一方面,就不包含钛的比较例3及4而言,当高温(500℃)下的体积电阻值减小为无法测量的程度,而钛过多地过量添加时(比较例1),与实施例7相比,钛对体积电阻增加的益处非常小,相反,反而发生杂质急剧增加的问题。
半导体制造装置用构件
如果参照图1,本发明一个实施例的半导体制造装置用构件包括加热板110、导电性组件120及电力供应部140。
该加热板110利用静电力来支撑基板10。该加热板110配备得可以加热该基板。该加热板110具有盘形状。
支撑组件(图中未示出)起到使加热板110不倾斜地支撑的作用。该支持构件也可以由不锈钢合金、铝合金或铜合金构成。
该加热板110由氮化铝烧结体构成。该氮化铝烧结体包含氧化钇、钛及氮化铝。
该包含氮化铝的本发明的氮化铝烧结体可以用作在半导体制造步骤中使芯片固定的同时进行加热的加热器等的加热板110的用途。
该钛起到使该氮化铝烧结体的体积电阻值增加的作用。
根据本发明另一实施例,在加热板110的上面还可以形成有介电层(图中未示出)。
导电性组件120埋设于加热板110内。导电性组件120执行静电场生成电极、高频生成电极、发热体等的作用。
导电性组件120由金属构成。例如,导电性组件120可以由包括钨(W)、钛(Ti)、铑(Rh)、铌(Nb)、铱(Ir)、铼(Re)、钽(Ta)、钼(Mo)或他们的组合的金属构成。
在导电性组件120的下部,具备与导电性组件120电性连接的连接电缆125。连接电缆125由与导电性组件120的接触电阻小、导电性优秀的金属构成。
连接电缆125连接于用于向导电性组件120供应电源的电力供应部140。从电力供应部140向导电性组件120供应的电力可以多样地选择。例如,为了在板110上部生成静电场,可以从电力供应部140向导电性组件120供应直流夹持电压,为了生成电浆(plasma),可能供应高频偏置电力,为了从导电性组件120生成热,也可以供应普通的交流电压。
工业实用性
在使芯片固定的静电吸盘和化学气相沉积(CVD)步骤等中,根据本发明的氮化铝烧结体可以用于固定芯片的同时进行加热的半导体制造用加热器。
如上述,参照本发明的优选实施例进行了说明,但只要是所属技术领域的技术人员便会理解,在不超出权利要求书中记载的本发明的思想及领域的范围内,可以多样地修改及变更本发明。
Claims (13)
1.一种半导体制造装置用陶瓷加热器,其包含氮化铝烧结体,
所述氮化铝烧结体包含钇(Y)和钛(Ti),
以所述氮化铝烧结体的总重量为基准,当用氧化钇(Y2O3)换算所述钇时,所述氮化铝烧结体包含1~5重量%的氧化钇,并且包含17~31ppm的所述钛,
所述氮化铝烧结体在400℃的温度及500V/mm电场条件下具有2.0×109~4.0×1011Ω·cm范围的体积电阻值。
2.根据权利要求1所述的半导体制造装置用陶瓷加热器,其中,以氧化钇换算为基准,包含3~5重量%的氧化钇。
3.根据权利要求1所述的半导体制造装置用陶瓷加热器,其中,所述钛与所述氧化钇的重量比为0.0006~0.002。
4.根据权利要求1所述的半导体制造装置用陶瓷加热器,其中,所述钛与所述氧化钇的重量比为0.0004~0.002。
5.根据权利要求1所述的半导体制造装置用陶瓷加热器,包括:
导电性组件,埋设于所述氮化铝烧结体中;以及
电力供应部,连接到所述导电性组件。
6.根据权利要求1所述的半导体制造装置用陶瓷加热器,其中,具有100W/mK以上的导热率。
7.根据权利要求1所述的半导体制造装置用陶瓷加热器,其中,在杂质检查中,杂质为30ppb以下。
8.一种半导体制造装置用陶瓷加热器的制造方法,通过所述方法制造由包含钛(Ti)、钇(Y)和氮化铝(AlN)的烧结体组成的半导体制造装置用陶瓷加热器,所述方法包括以下步骤:
混合包含钛源、氧化钇(Y2O3)和氮化铝的原料粉末;
在1700~2000℃的温度下,将混合的所述原料粉末进行烧结,以制造氮化铝烧结体,
在所述混合步骤的原料粉末中,氧化钇为1~5重量%,
所述氮化铝烧结体中的钛含量为17~31ppm,
所述氮化铝烧结体在400℃的温度及500V/mm电场条件下具有2.0×109~4.0×1011Ω·cm范围的体积电阻值。
9.根据权利要求8所述的半导体制造装置用陶瓷加热器的制造方法,其中,
所述氧化钇为3~5重量%。
10.根据权利要求9所述的半导体制造装置用陶瓷加热器的制造方法,其中,
在所述氮化铝烧结体中,所述钛与所述氧化钇的重量比为0.0006~0.002。
11.根据权利要求9所述的半导体制造装置用陶瓷加热器的制造方法,其中,
所述钛与所述氧化钇的重量比为0.0004~0.002。
12.根据权利要求8所述的半导体制造装置用陶瓷加热器的制造方法,其中,
所述氮化铝烧结体具有100W/mK以上的导热率。
13.根据权利要求8所述的半导体制造装置用陶瓷加热器的制造方法,其中,
在杂质检查中,杂质为30ppb以下。
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曾燕伟主编: "《无机材料科学基础》", 武汉理工大学出版社, pages: 353 - 354 * |
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JP2020521706A (ja) | 2020-07-27 |
US11508586B2 (en) | 2022-11-22 |
US20200303205A1 (en) | 2020-09-24 |
WO2019004589A1 (ko) | 2019-01-03 |
KR20190003872A (ko) | 2019-01-10 |
CN110770193A (zh) | 2020-02-07 |
US20230024625A1 (en) | 2023-01-26 |
KR102339550B1 (ko) | 2021-12-17 |
TW201904916A (zh) | 2019-02-01 |
JP7181898B2 (ja) | 2022-12-01 |
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