KR20060111280A - 치밀질 질화알루미늄 소결체, 그 제조 방법 및 상기소결체를 이용한 반도체 제조용 부재 - Google Patents
치밀질 질화알루미늄 소결체, 그 제조 방법 및 상기소결체를 이용한 반도체 제조용 부재 Download PDFInfo
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- aluminum nitride
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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Abstract
Description
실시예 | 원료조건 | 소결조건 | 소결체 특성 | ||||||
질화알루미늄 | 산화 이트륨 | 산화 티타늄 | 소결 온도 | 유지 시간 | 열처리온도 | 유지 시간 | 상대 밀도 | 체적 저항율 | |
wt% | wt% | wt% | ℃ | 시간 | ℃ | 시간 | % | Ω·cm | |
1 | 96.95 | 3 | 0.05 | 1720 | 5 | - | - | 99.1 | 1×1015 |
2 | 94.8 | 5 | 0.2 | 1750 | 3 | - | - | 99.5 | 2×1015 |
3 | 90.8 | 9 | 0.2 | 1750 | 3 | - | - | 100 | 2×1015 |
4 | 94.6 | 5 | 0.4 | 1750 | 3 | 1500 | 3 | 100 | 1×1015 |
5 | 89 | 9 | 2 | 1750 | 3 | 1450 | 2 | 100 | 5×1015 |
6 | 96.95 | 3 | 0.05 | 1720 | 3 | 1400 | 5 | 99.4 | 1×1015 |
7 | 96.95 | 3 | 0.05 | 1720 | 5 | 1650 | 5 | 100 | 2×1015 |
비교예 | 원료조건 | 소결조건 | 소결체 특성 | ||||||
질화알 루미늄 | 산화 이트륨 | 산화 티타늄 | 소결 온도 | 유지 시간 | 열처리온도 | 유지 시간 | 상대 밀도 | 체적 저항율 | |
wt% | wt% | wt% | ℃ | 시간 | ℃ | 시간 | % | Ω·cm | |
1 | 91 | 9 | 0 | 1750 | 3 | - | - | 99.7 | 1×1014 |
2 | 95 | 5 | 0 | 1650 | 6 | - | - | 99 | 5×1014 |
3 | 99.6 | 0 | 0.4 | 1680 | 5 | - | - | 97.8 | 2×1015 |
4 | 91 | 9 | 0 | 1750 | 3 | 1500 | 3 | 99.9 | 1×1014 |
5 | 98 | 0 | 2 | 1680 | 5 | 1450 | 5 | 98.3 | 3×1015 |
6 | 99.6 | 0 | 0.4 | 1720 | 1 | 1450 | 1 | 97.6 | 8×1014 |
Claims (9)
- 치밀질 질화알루미늄 소결체에 있어서,질화알루미늄의 회절피크강도에 대한 질화티타늄의 회절피크강도의 비율이 0.1~20%이며, 상온에서의 체적저항율이 1×1015 Ω·cm 이상이고 상대밀도가 99% 이상인 것을 특징으로 하는 치밀질 질화알루미늄 소결체.
- 치밀질 질화알루미늄 소결체에 있어서,소결전 질화알루미늄 소결체용 분말이 산화이트륨(Y2O3) 0.1~15wt% 및 산화티타늄(TiO2) 0.01~5wt%를 포함하며, 소결 후 상온에서의 체적저항율이 1×1015 Ω·cm 이상이고 상대밀도가 99% 이상인 것을 특징으로 하는 치밀질 질화알루미늄 소결체.
- 반도체 제조용 부재에 있어서,제 1 항 또는 제 2 항에 의한 치밀질 질화알루미늄 소결체로 이루어지는 것을 특징으로 하는 반도체 제조용 부재.
- 제 3 항에 있어서,상기 반도체 제조용 부재는 쿨롱형 정전척인 것을 특징으로 하는 반도체 제조용 부재.
- 치밀질 질화알루미늄 소결체의 제조 방법에 있어서,산화이트륨 0.1~15wt% 및 산화티타늄 0.01~5wt%를 포함하는 질화알루미늄 소결체용 분말을 제공하는 단계(S1); 및상기 분말을 소결하고 냉각하거나 또는 소결 후 냉각 과정동안 열처리하여 상온에서의 체적저항율이 1×1015 Ω·cm 이상이고 상대밀도가 99% 이상인 질화알루미늄 소결체를 수득하는 단계(S2)를 포함하는 것을 특징으로 하는 치밀질 질화알루미늄 소결체의 제조 방법.
- 제 5 항에 있어서,상기 S2 단계에서 상기 소결시 소결온도를 1700~1850℃로 하는 것을 특징으로 하는 치밀질 질화알루미늄 소결체의 제조 방법.
- 제 6 항에 있어서,상기 소결시 소결유지시간을 1~10 시간으로 하는 것을 특징으로 하는 치밀질 질화알루미늄 소결체의 제조 방법.
- 제 5 항 내지 제 7 항 중 어느 한 항에 있어서,상기 S2 단계에서 상기 열처리시 열처리 온도를 1400~1650℃로 하는 것을 특징으로 하는 치밀질 질화알루미늄 소결체의 제조 방법.
- 제 8 항에 있어서,상기 열처리시 열처리 시간을 1~5 시간으로 하는 것을 특징으로 하는 치밀질 질화알루미늄 소결체의 제조 방법.
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KR20190003872A (ko) * | 2017-06-30 | 2019-01-10 | 주식회사 미코 | 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재 |
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JPH07187788A (ja) * | 1993-12-27 | 1995-07-25 | Ngk Spark Plug Co Ltd | 窒化アルミニウム焼結体及びその製造方法 |
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KR20190003872A (ko) * | 2017-06-30 | 2019-01-10 | 주식회사 미코 | 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재 |
CN110770193A (zh) * | 2017-06-30 | 2020-02-07 | 株式会社美科 | 氮化铝烧结体及包括其的半导体制造装置用构件 |
CN115321987A (zh) * | 2017-06-30 | 2022-11-11 | 美科陶瓷科技有限公司 | 氮化铝烧结体及包括其的半导体制造装置用构件 |
US11508586B2 (en) | 2017-06-30 | 2022-11-22 | Mico Ceramics Ltd. | Aluminum nitride sintered body and member for semiconductor manufacuting apparatus comprising same |
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