CN1123590C - 聚苯并噁唑树脂及其前体 - Google Patents
聚苯并噁唑树脂及其前体 Download PDFInfo
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- CN1123590C CN1123590C CN99125985A CN99125985A CN1123590C CN 1123590 C CN1123590 C CN 1123590C CN 99125985 A CN99125985 A CN 99125985A CN 99125985 A CN99125985 A CN 99125985A CN 1123590 C CN1123590 C CN 1123590C
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- dicarboxylic acid
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- polybenzoxazole
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- 229920002577 polybenzoxazole Polymers 0.000 title claims abstract description 48
- 239000011347 resin Substances 0.000 title claims abstract description 40
- 229920005989 resin Polymers 0.000 title claims abstract description 40
- 239000002243 precursor Substances 0.000 title claims abstract description 25
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 229920006015 heat resistant resin Polymers 0.000 abstract description 2
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 32
- 230000000052 comparative effect Effects 0.000 description 14
- XOXAZFFGKMIJKE-UHFFFAOYSA-N 2-amino-6-(trifluoromethyl)phenol Chemical compound NC1=CC=CC(C(F)(F)F)=C1O XOXAZFFGKMIJKE-UHFFFAOYSA-N 0.000 description 13
- -1 overcoat Substances 0.000 description 12
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 239000012528 membrane Substances 0.000 description 9
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 8
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000009719 polyimide resin Substances 0.000 description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 4
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
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- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
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- 229910000679 solder Inorganic materials 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000006482 condensation reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- LGRFSURHDFAFJT-UHFFFAOYSA-N phthalic anhydride Chemical compound C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- OTEKOJQFKOIXMU-UHFFFAOYSA-N 1,4-bis(trichloromethyl)benzene Chemical compound ClC(Cl)(Cl)C1=CC=C(C(Cl)(Cl)Cl)C=C1 OTEKOJQFKOIXMU-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- ATJGAHFTSOPTCH-UHFFFAOYSA-N 2-amino-3-(trifluoromethyl)phenol Chemical compound NC1=C(O)C=CC=C1C(F)(F)F ATJGAHFTSOPTCH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 2
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- WGYZMNBUZFHYRX-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-ol Chemical compound COCC(C)OCC(C)O WGYZMNBUZFHYRX-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- PCAXITAPTVOLGL-UHFFFAOYSA-N 2,3-diaminophenol Chemical class NC1=CC=CC(O)=C1N PCAXITAPTVOLGL-UHFFFAOYSA-N 0.000 description 1
- WVHMPQKZPHOCRD-UHFFFAOYSA-N 2,4,5,6-tetrafluorobenzene-1,3-dicarbonitrile Chemical class FC1=C(F)C(C#N)=C(F)C(C#N)=C1F WVHMPQKZPHOCRD-UHFFFAOYSA-N 0.000 description 1
- ILZRAAUVZAXXKZ-UHFFFAOYSA-N 2-amino-5-(trifluoromethyl)phenol Chemical compound NC1=CC=C(C(F)(F)F)C=C1O ILZRAAUVZAXXKZ-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- AIDLAEPHWROGFI-UHFFFAOYSA-N 2-methylbenzene-1,3-dicarboxylic acid Chemical compound CC1=C(C(O)=O)C=CC=C1C(O)=O AIDLAEPHWROGFI-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- NEQFBGHQPUXOFH-UHFFFAOYSA-N 4-(4-carboxyphenyl)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C=C1 NEQFBGHQPUXOFH-UHFFFAOYSA-N 0.000 description 1
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- QOSSAOTZNIDXMA-UHFFFAOYSA-N Dicylcohexylcarbodiimide Chemical compound C1CCCCC1N=C=NC1CCCCC1 QOSSAOTZNIDXMA-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical compound N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 230000008025 crystallization Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000010612 desalination reaction Methods 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- GWZCCUDJHOGOSO-UHFFFAOYSA-N diphenic acid Chemical compound OC(=O)C1=CC=CC=C1C1=CC=CC=C1C(O)=O GWZCCUDJHOGOSO-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
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- 235000019439 ethyl acetate Nutrition 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000892 gravimetry Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000003949 imides Chemical group 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- FWFGVMYFCODZRD-UHFFFAOYSA-N oxidanium;hydrogen sulfate Chemical compound O.OS(O)(=O)=O FWFGVMYFCODZRD-UHFFFAOYSA-N 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 238000006692 trifluoromethylation reaction Methods 0.000 description 1
- XBEADGFTLHRJRB-UHFFFAOYSA-N undecylbenzene Chemical compound CCCCCCCCCCCC1=CC=CC=C1 XBEADGFTLHRJRB-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/22—Polybenzoxazoles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
本发明提供了一种电特性、热特性和低吸水性都优良的耐热性树脂,即,本发明提供的是以一般式(1)、(3)、和(5)表示的聚苯并噁唑前体和一般式(2)、(4)和(6)表示的聚苯并噁唑树脂。
Description
本发明是关于电特性、热特性、机械特性及物理特性优良的聚苯并噁唑树脂,适宜作半导体用的层间绝缘膜、保护膜、多层线路的层间绝缘膜、弹性铜板的保护层、焊料保护膜、液晶定向膜等。
在半导体材料中,根据所需要的特性,在各个部分可使用无机系材料、有机系材料等各种材料。例如,作为半导体用的层间绝缘膜,可使用以化学气相法等制作的二氧化硅等无机绝缘膜。然而,近年来伴随着半导体的高功能化、高性能化,因为二氧化硅等无机绝缘膜存在介电常数高、脆弱、吸水率高等问题,难以适用。作为对它们改进的手段之一,正在研究使用有机系材料。
作为半导体使用的有机材料,有耐热性、机械特性等优良的聚酰亚胺树脂,可以用作焊料保护膜、复盖层、液晶定向膜等。然而,聚酰亚胺树脂,在酰亚胺环中具有2个羰基,所以通常在电特性和吸水性方面存在问题。对于这些问题,试图通过向高分子内引入氟以及三氟甲基,改进电特性和吸水性,及耐热性。但,当前还没有达到所要求的水准。
从这种情况考虑,正试图将比聚酰亚胺树脂更能显示优良电特性和吸水特性性能的聚苯并噁唑树脂用于半导体用的绝缘材料。聚苯并噁唑树脂很容易满足电特性、热特性或物理特性中的任何一个特性,例如,由4,4’-二氨基-3,3’-二羟基联苯和对酞酸合成的聚苯并噁唑树脂,具有非常好的耐热分解性、高Tg等耐热性,但介电常数、介质损耗因数等电特性还不太好。由2,2’-二(3-氨基-4-羟基苯)六氟丙烷和对酞酸合成的聚苯并噁唑树脂,虽然显示出低介电常数等良好的电特性,但,耐热性等不太好。这样,当前的现状是还没有获得电特性、热特性、及物理特性都优良的树脂。
本发明的目的是提供一种电特性、热特性、及低吸水性都优良的耐热性树脂。
本发明者们鉴于上述存在的问题,经过大量研究结果发现了以一般式(1)、(3)、和(5)表示的聚苯并噁唑前体和以一般式(2)、(4)和(6)表示的聚苯并噁唑树脂,并由此完成了本发明,以一般式(2)表示的聚苯并噁唑树脂是由以一般式(1)表示的聚苯并噁唑前体获得的,以一般式(4)的树脂是由一般式(3)的前体获得的,而一般式(6)的树脂是由以一般式(5)的前体获得的
但是,一般式(1)、(3)和(5)中,及一般式(2)、(4)和(6)中的n表示2~1000的整数。Rf1和Rf2是H或CmF2m+1,至少一方是CmF2m+1,两者可以相同,也可以不同。m表示1-10的整数。X表示2价的有机基。
在合成本发明的聚苯并噁唑前体和树脂时,使用的二氨基酚化合物是以一般式(7)表示的,例如,可以举出有2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷、2,2’-二(3-氨基-4-羟基-6-三氟甲基苯)六氟丙烷、2,2’-二(3-氨基-4-羟基-2-三氟甲基苯)六氟丙烷、2,2’-二(4-氨基-3-羟基-5-三氟甲基苯)六氟丙烷、2,2’-二(4-氨基3-羟基-6-三氟甲基苯)六氟丙烷、2,2’-二(4-氨基-3-羟基-2-三氟甲基苯)六氟丙烷、2,2’-二(3-氨基-4-羟基-5-五氟乙基苯)六氟丙烷、2-(3-氨基-4-羟基-5-三氟甲基苯)-2’-(3-氨基-4-羟基-5-五氟乙基苯)六氟丙烷、2-(3-氨基-4-羟基-5-三氟甲基苯)-2’-(3-羟基-4-氨基-5-三氟甲基苯)六氟丙烷、2-(3-氨基-4-羟基-5-三氟甲基苯)-2’-(3-羟基-4-氨基-6-三氟甲基苯)六氟丙烷、2-(3-氨基-4-羟基-5-三氟甲基苯)-2’-(3-羟基-4-氨基-2-三氟甲基苯)六氟丙烷、2-(3-氨基-4-羟基-2-三氟甲基苯)-2’-(3-羟基-4-氨基-5-三氟甲基苯)六氟丙烷、2-(3-氨基-4-羟基-6-三氟甲基苯)-2’-(3-羟基-4-氨基-5-三氟甲基苯)六氟丙烷等。可以将这些二氨基酚化合物单独、或2种以上组合使用。例如,4,4’-二氨基-3,3’-二羟基联苯和2,2’-二(3-氨基-4-羟基苯)六氟丙烷等不符合一般式(7)的二氨基酚化合物,可以在不损害性能的范围内同时并用。
(式(7)中,Rf1和Rf2是H或CmF2m+1,至少一方是CmF2m+1,两者可以相同,或不同。m是表1-10的整数。氨基和羟基互为邻位关系。)
m在10以下,最好在3以下。大于10时,介电常数降低了,影响到耐热性、机械特性变坏。
在合成本发明的聚苯并噁唑前体和树脂时,对于所使用的二羧酸是以一般式(8)表示,例如有3-氟异酞酸、2-氟异酞酸、3-氟酞酸、2-氟酞酸、2-氟对酞酸、2,4,5,6-四氟异酞酸、3,4,5,6-四氟酞酸、4,4’-六氟异亚丙基二苯1,1’-二羧酸、全氟辛二酸、2,2’-二(三氟甲基)-4,4’-联苯撑二羧酸、3,3’-二(三氟甲基)-4,4’-联苯撑二羧酸、2,2’-二(三氟甲基)-5,5’-联苯撑二羧酸、3,3’-二(三氟甲基)-5,5’-联苯撑二羧酸、4,4’-二(三氟甲基)-5,5’-联苯撑二羧酸、4,4’-联苯二羧酸、2,2’-联苯二羧酸、萘撑-1,4-二羧酸、萘撑-1,5-二羧酸、萘撑-1,6-二羧酸、萘撑-2,6-二羧酸、二(4-羧基苯)磺基、二(3-羧基苯)磺基、对酞酸、异酞酸、4,4’-氧二苯-1,1’-二羧酸等,也不一定仅限于这些。这些二羧酸可单独使用,也可2种以上组合使用。
HO2C-X-CO2H (8)
(式(8)中,X表示2价有机基。)
制造本发明聚苯并噁唑前体的方法有:将上述一般式(7)表示的二氨基酚化合物和上述一般式(8)表示的二羧酸,在聚磷酸和二环己基碳化二亚胺等脱水缩合剂的存在下进行缩合反应的方法,将上述一般式(7)表示的二氨基酚化合物和上述一般式(8)表示的二羧酸的酸性氯化物,进行脱盐酸缩合反应的酸性氯化物法和活性酯法等。
以酸性氯化物法合成聚苯并噁唑前体为例,首先,在有N,N-二甲基甲酰胺等催化剂存在下,使二羧酸4,4’-六氟异丙撑二苯-1,1’-二羧酸和过量的氯化亚硫酰,在室温~75℃下进行反应,利用加热和减压将过剩的氯化亚硫酰蒸馏去除。随后,用己烷等溶剂将残渣进行再结晶,得到酸性氯化物4,4’-六氟异丙撑二苯-1,1’-二羧酸氯化物。接着,将得到的4,4’-六氟异丙撑二苯-1,1’-二羧酸氯化物和二氨基酚化合物2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷,溶解在N-甲基-2-吡咯烷酮等极性溶剂中,在吡啶等酸性接收剂存在下,在-30℃~室温下进行反应,可制得聚苯并噁唑前体。
以上述一般式(2)、(4)和(6)表示的本发明聚苯并噁唑树脂,可以将获得的上述一般式(1)、(3)、和(5)表示的聚苯并噁唑前体,以老方法,通过加热或以脱水剂处理进行缩合反应而制得。这种树脂中,可根据需要,添加作为各种添加剂的表面活性剂和偶合剂等,可用作半导体用层间绝缘膜、保护膜、多层线路的层间绝缘膜、弹性铜板的保护涂层,焊料保护膜、液晶定向膜等。
本发明中的聚苯并噁唑树脂的前体,可以和作为感光剂的萘醌二叠氮化合物一起使用,用作感光性树脂组合物。
本发明的聚苯并噁唑前体,通常将其溶解在溶剂中,最好制成清漆状使用。作为溶剂,例如有N-甲基-2-吡咯烷酮、r-丁内酯、N,N-二甲基乙酰胺、N,N-二甲基甲酰胺、二甲基亚砜、二乙基醚、二乙二醇二甲基醚、二乙二醇二乙基醚、二乙二醇二丁基醚、丙二醇单甲基醚、二丙二醇单甲基醚、丙二醇单甲基醚乙酸酯、乳酸甲酯、乳酸乙酯、乳酸丁酯、甲基-1,3-丁二醇乙酸酯、1,3-丁二醇-3-单甲基醚丙酮酸甲酯、丙酮酸乙酯、甲基-3-甲氧丙酸酯、甲基乙基酮、甲基异丁基酮等,可以单独使用,也可以2种以上混合使用。
使用本发明的聚苯并噁唑前体时,将上述前体溶解于上述溶剂中,涂布在适当的载体上,例如玻璃、金属、硅片和陶瓷基盘等之上。作为涂布方法,可以选择用旋转器的旋转涂布、用喷涂器的喷雾涂布、浸渍、印刷、辊子涂敷等。这样涂布形成涂膜后,进行加热处理、最好转变成聚苯并噁唑树脂后使用。
实施发明的最佳形式
以下根据实施例具体说明本发明,但本发明并不仅限于实施例中的内容。
实施例1
(1)二氨基酚化合物的三氟甲基化
将2,2’-二(3-氨基-4-羟基苯)六氟丙烷(150g)(セントラル硝子(株)制)溶解在干燥N,N-二甲基甲酰胺(岸田化学(株)制,以下简称为DMF)(890ml)中,冰冷下加入S-(三氟甲基)二苯并噻吩三氟甲磺酸盐(393g)(ダイキン化化成品贩壳(株)制)。以10℃/小时的升温速度升温到70℃后,在70℃下反应24小时。该反应在氮气环境下进行。将反应溶液加入到水中,将水层调整到中性后,用二乙基醚(岸田化学(株)制、以下称作醚)萃取,收集醚层,蒸馏去除醚后,将析出物用醋酸乙酯等有机溶剂充分洗涤,得到2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷(100.5g)。
(2)合成酸性氯化物
将4,4’-六氟异丙撑二苯-1,1’-二羧酸(92g)(クラリアントジヤヒン(株)制)、氯化亚硫酰(166ml)(岸田化学(株)制)和干燥的DMF(1.8ml)装入反应容器中,60℃下反应2小时。反应结束后,通过加热和减压蒸馏去除过剩的氯化亚硫酰。将析出物用己烷(关东化学(株)制)进行再结晶,得到4,4’-六氟异丙撑二苯-1,1’-二羧酸氯化物(84.6g)。
(3)合成前体和制作树脂膜
将2,2’-二(3-氨基4-羟基-5-三氟甲基苯)六氟丙烷100.5g(0.2摩尔)溶解在干燥的二甲基乙酰胺(400g)中,添加吡啶(39.6g,0.5摩尔)(岸田化学(株)制)后,在干燥氮气环境中-15℃下,将4,4’-六氟异丙撑二苯-1,1’-二羧酸氯化物(84.6g,0.2摩尔)溶解在二甲基乙酰胺(200g)中,得到的溶液在30分钟内滴加到上述溶液中。滴加结束后,恢复到室温,室温下搅拌5小时,随后,将反应液滴加到蒸馏水(700ml)中,收集沉淀物,利用干燥,得到聚苯并噁唑前体。
将这种聚苯并噁唑前体溶解在N-甲基-2-吡咯烷酮中,用孔径0.2μm的特氟纶过滤器过滤,得到清漆。
这样得到的聚苯并噁唑前体的数均分子量(Mn),使用东ソ-株式会社制GPC,以聚苯乙烯换算求得,为25000。
用间隙300μm的刮刀片将该清漆涂布在玻璃板上。随后,在干燥箱中,70℃下干燥1小时,剥下,得到膜厚20μm的聚苯并噁唑前体膜,将该膜用模具固定住,在氮气环境中,进行加热,依次为150℃下30分钟,250℃下30分钟,350℃下30分钟,得到聚苯并噁唑树脂。使用这种树脂,评价各种特性,评价结果示于表1。
实施例2
将1,2,3,5-四氟-4,6-二氰基苯(68.3g)(SDSバイオテック社制)加入到65%的硫酸水(342g)中。加热溶解后,在回流条件下,加热3小时。抽吸过滤析出的结晶,用浓盐酸(和光纯药工业(株))将收集到的结晶洗涤后,风干,得到2,4,5,6-四氟异酞酸(49.2g)。
将得到的2,4,5,6-四氟异酞酸,以和实施例1相同的酸性氯化物化法,制得2,4,5,6-四氟异酞酸氯化物(54.2g,0.2摩尔),用该产物取代实施例1中的4,4’-六氟异丙撑二苯1,1’-二羧酸氯化物(84.6g,0.2摩尔),其他与实施例1一样,制作聚苯并噁唑树脂,并进行评价。
实施例3
将4,4’-氧二苯1,1’-二羧酸,以和实施例1相同的酸性氯化物化法,制得4,4’-氧二苯1,1’-二羧酸氯化物(59.0g,0.2摩尔),用该产物取代实施例1中的4,4’-六氟异丙撑二苯1,1’-二羧酸氯化物(84.6g,0.2摩尔),其他和实施例1一样,制作聚苯并噁唑树脂,并进行评价。
实施例4
用4,4’-六氟异丙撑二苯-1,1’-二羧酸氯化物(42.3g,0.1摩尔)和4,4’-氧二苯-1,1’-二羧酸氯化物(29.5g,0.1摩尔),取代实施例1中的4,4’-六氟异丙撑二苯-1,1’-二羧酸氯化物(84.6g,0.2摩尔),其他和实施例1相同,制作聚苯并噁唑树脂,并进行评价。
实施例5
用4,4’-六氟异丙撑二苯-1,1’-二羧酸氯化物(42.3g,0.1摩尔)和2,4,5,6-四氟异酞酸氯化物(27.1g,0.1摩尔),取代实施例1中的4,4’-六氟异丙撑二苯-1,1’-二羧酸氯化物(84.6g,0.2摩尔)其他和实施例1相同,制作聚苯并噁唑树脂,并进行评价。
实施例6
用2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷(70.4g,0.14摩尔)和4,4’-二氨基-3,3’-二羟基联苯(13.0g,0.06摩尔),取代实施例1中的2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷(100.5g,0.2摩尔),其他和实施例1相同,制作聚苯并噁唑树脂,并进行评价。
实施例7
用2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷(50.3g,0.1摩尔)和4,4’-二氨基-3,3’-二羟基联苯(21.6g,0.1摩尔),取代实施例1中的2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷(100.5g,0.2摩尔),其他和实施例1相同,制作聚苯并噁唑树脂,并进行评价。
实施例8
用2,2’-二(3-氨基-4-羟基-5-五氟乙基苯)六氟丙烷(119.7g,0.2摩尔),取代实施例1中的2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷(100.5g,0.2摩尔),其他和实施例1相同,制作聚苯并噁唑树脂,并进行评价。
比较例1
用4,4’-二氨基-3,3’-二羟基联苯(43.2g,0.2摩尔),取代实施例1中的2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷(100.5g,0.2摩尔),用4,4’-氧二苯-1,1’-二羧酸氯化物(59.0g,0.2摩尔),取代4,4’-六氟异丙撑二苯-1,1’-二羧酸氯化物(84.6g,0.2摩尔),其他和实施例1相同,制作聚苯并噁唑树脂,并进行评价。
比较例2
用4,4’-二氨基-3,3’-二羟基联苯(43.2g,0.2摩尔),取代实施例1中的2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷(100.5g,0.2摩尔),其他和实施例1相同,制作聚苯并噁唑树脂,并进行评价。
比较例3
使用2,2’-二(3-氨基-4-羟基苯)六氟丙烷(43.3g,0.2摩尔),取代实施例1中的2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷(100.5g,0.2摩尔),用4,4’-氧二苯-1,1’-二羧酸氯化物(59.0g,0.2摩尔),取代4,4’-六氟异丙撑二苯-1,1’-二羧酸氯化物(84.6g,0.2摩尔),其他和实施例1相同,制作聚苯并噁唑树脂,并进行评价。
比较例4
将2,2’-二(4-氨基苯)六氟丙烷(66.9g,0.2摩尔)(セントラル硝子(株)制)溶解在干燥的N-甲基-2-吡咯烷酮(400g)中,在干燥氮气中,10℃下,30分钟内,滴加将六氟异丙撑-2,2’-双酞酸无水物(88.9g)(ダイキン工业(株)制)溶于N-甲基-2-吡咯烷酮(200g)中的产物,滴加结束后,恢复到室温,室温下搅拌2小时。随后,将反应液滴加到蒸馏水(1000ml)中,收集沉淀物,利用干燥,得到聚亚胺前体。
将这种聚亚胺前体溶解于N-甲基2-吡咯烷酮中,其他和实施例1相同,制作聚亚胺树脂,并进行评价。
比较例5
用2,2’-二(3-氨基-4-羟基-5-全氟十一烷基苯)六氟丙烷(150.2g,0.2摩尔),取代实施例1中的2,2’-二(3-氨基-4-羟基-5-三氟甲基苯)六氟丙烷(100.5g,0.2摩尔),其他和实施例1相同,制作聚苯并噁唑树脂,并进行评价。
实施例和比较例的评价结果示于表1。
表1
介电常数 | 耐热性(℃) | 吸水率(%) | |
实施例1 | 2.3 | 510 | 0.1 |
实施例2 | 2.2 | 513 | 0.1 |
实施例3 | 2.4 | 502 | 0.1 |
实施例4 | 2.4 | 505 | 0.1 |
实施例5 | 2.4 | 511 | 0.1 |
实施例6 | 2.4 | 518 | 0.1 |
实施例7 | 2.4 | 520 | 0.1 |
实施例8 | 2.2 | 501 | 0.1 |
比较例1 | 3.2 | 525 | 0.3 |
比较例2 | 3.0 | 510 | 0.3 |
比较例3 | 3.0 | 503 | 0.3 |
比较例4 | 2.7 | 498 | 1.1 |
比较例5 | 2.2 | 420 | 0.1 |
介电常数:根据JIS-K6911标准,以频率1MHz,使用Hewtett-Packard Co.制HP-42 84A Precision LCR测量仪进行测量。
耐热性:使用セイコ-电子工业(株)制TG/DTA 200,氮气流下,以10℃/分升温速度,测定重量减少5%时的温度。
吸水率:利用重量法,测定温度85℃,湿度85%,24小时后的吸水率。
表1中结果表示关于介电常数、耐热性和吸水率,实施例1~8的聚苯并噁唑树脂呈现出良好的结果。但是,比较例1~3的聚苯并噁唑树脂,呈现出介电常数高于实施例,比较例4的聚亚胺树脂,呈现出比实施例更差的吸水率,比较例5的聚苯并噁唑树脂,呈现出比实施例低的耐热性,从而可知不具有本发明构成的聚苯并噁唑树脂和聚亚胺树脂,介电常数、耐热性、吸水率不能全部得到满足。
由以上实施例可以明确,根据本发明能获得电特性、热特性和低吸水性都非常好的聚苯并噁唑树脂。
因此,本发明的聚苯并噁唑树脂,适用于对电特性、热特性、机械特性和物理特性有要求的各种用途,例如用作半导体用层间绝缘膜、保护膜、多层线路的层间绝缘膜、弹性铜板的保护层,焊料保护膜、液晶定向膜等。
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Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6297351B1 (en) * | 1998-12-17 | 2001-10-02 | Sumitomo Bakelite Company Limited | Polybenzoxazole resin and precursor thereof |
DE10228769A1 (de) | 2002-06-27 | 2004-02-05 | Infineon Technologies Ag | Isoliermaterial für Aluminium und Kupfermetallisierungen |
KR101199664B1 (ko) * | 2004-12-28 | 2012-11-08 | 스미토모 베이클리트 컴퍼니 리미티드 | 벤조옥사졸 수지 전구체, 폴리벤조옥사졸 수지, 수지막 및반도체 장치 |
US8536299B2 (en) * | 2008-12-08 | 2013-09-17 | University Of Dayton | Rigid-rod copolymer compositions and the polymeric fibers fabricated from those compositions for enhanced flame resistance |
CN102250117B (zh) * | 2011-05-11 | 2013-07-24 | 华东理工大学 | 一种含噁唑环的双苯并噁嗪及其制备方法 |
ES2928164T3 (es) | 2015-10-19 | 2022-11-15 | Incyte Corp | Compuestos heterocíclicos como inmunomoduladores |
TWI763641B (zh) | 2015-11-19 | 2022-05-11 | 美商英塞特公司 | 作為免疫調節劑之雜環化合物 |
KR20180100585A (ko) | 2015-12-22 | 2018-09-11 | 인사이트 코포레이션 | 면역조절제로서의 헤테로사이클릭 화합물 |
MA44860A (fr) | 2016-05-06 | 2019-03-13 | Incyte Holdings Corp | Composés hétérocycliques utilisés comme immunomodulateurs |
US20170342060A1 (en) | 2016-05-26 | 2017-11-30 | Incyte Corporation | Heterocyclic compounds as immunomodulators |
MD3472167T2 (ro) | 2016-06-20 | 2023-02-28 | Incyte Corp | Compuși heterociclici ca imunomodulatori |
US20180016260A1 (en) | 2016-07-14 | 2018-01-18 | Incyte Corporation | Heterocyclic compounds as immunomodulators |
EP3504198B1 (en) | 2016-08-29 | 2023-01-25 | Incyte Corporation | Heterocyclic compounds as immunomodulators |
ES2874756T3 (es) | 2016-12-22 | 2021-11-05 | Incyte Corp | Derivados de triazolo[1,5-A]piridina como inmunomoduladores |
MY197635A (en) | 2016-12-22 | 2023-06-29 | Incyte Corp | Benzooxazole derivatives as immunomodulators |
CR20190317A (es) | 2016-12-22 | 2019-09-13 | Incyte Corp | Compuestos inmunomodulares y métodos de uso |
EP3558973B1 (en) | 2016-12-22 | 2021-09-15 | Incyte Corporation | Pyridine derivatives as immunomodulators |
HUE061258T2 (hu) | 2018-03-30 | 2023-05-28 | Incyte Corp | Heterociklusos vegyületek mint immunmodulátorok |
CR20200614A (es) | 2018-05-11 | 2021-04-27 | Incyte Corp | Compuestos heterocíclicos como inmunomoduladores |
CN110305332B (zh) * | 2019-07-03 | 2022-01-28 | 华东理工大学 | 复合封装材料及其制备方法和复合薄膜 |
AR119624A1 (es) | 2019-08-09 | 2021-12-29 | Incyte Corp | Sales de un inhibidor de pd-1 / pd-l1 |
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US11780836B2 (en) | 2020-11-06 | 2023-10-10 | Incyte Corporation | Process of preparing a PD-1/PD-L1 inhibitor |
IL302590A (en) | 2020-11-06 | 2023-07-01 | Incyte Corp | Process for preparing PD-1/PD-L1 inhibitor and salts and crystalline forms thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62207332A (ja) * | 1986-03-06 | 1987-09-11 | Central Glass Co Ltd | ポリベンズオキサゾ−ル及びその製造方法 |
GB2188936A (en) * | 1986-03-06 | 1987-10-14 | Central Glass Co Ltd | Aromatic polyamides and polybenzoxazoles having diphenylhexafluoropropane units |
JPS63318A (ja) * | 1986-06-20 | 1988-01-05 | Central Glass Co Ltd | 芳香族ポリアミドの製造方法 |
US5021320A (en) * | 1986-10-02 | 1991-06-04 | Hoechst Celanese Corporation | Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist |
US5492996A (en) * | 1995-02-21 | 1996-02-20 | The United States Of America As Represented By The Secretary Of The Air Force | Alcohol soluble benzazole polymers |
US5493005A (en) * | 1995-02-21 | 1996-02-20 | The United States Of America As Represented By The Secretary Of The Air Force | Hydroxy-pendent benzoxazole copolymers |
US5498784A (en) * | 1995-02-21 | 1996-03-12 | The United States Of America As Represented By The Secretary Of The Air Force | Phosphonic acid-pendent benzoxazole copolymers |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3773110D1 (de) * | 1986-10-02 | 1991-10-24 | Hoechst Celanese Corp | Polyamide mit hexafluorisopropyliden-gruppen, diese enthaltende positiv arbeitende lichtempfindliche gemische und damit hergestellte aufzeichnungsmaterialien. |
JPH03221527A (ja) * | 1990-01-29 | 1991-09-30 | Oki Electric Ind Co Ltd | 圧電子保護膜 |
DE69131529T2 (de) * | 1990-05-29 | 2000-01-20 | Sumitomo Bakelite Co | Positiv arbeitende lichtempfindliche Harzzusammensetzung |
US5145999A (en) * | 1991-04-04 | 1992-09-08 | E. I. Du Pont De Nemours And Company | Perfluoroalkylated amines, and polymers made therefrom |
JPH0643464A (ja) * | 1992-07-24 | 1994-02-18 | Hitachi Chem Co Ltd | 液晶配向膜、これを有する液晶挟持基板及び液晶表示素子並びに液晶配向膜用材料 |
-
1998
- 1998-10-28 JP JP10306727A patent/JP2000128984A/ja active Pending
-
1999
- 1999-10-26 KR KR1019990046712A patent/KR100580907B1/ko not_active IP Right Cessation
- 1999-10-26 US US09/427,024 patent/US6114497A/en not_active Expired - Lifetime
- 1999-10-26 DE DE69916742T patent/DE69916742D1/de not_active Expired - Lifetime
- 1999-10-26 EP EP99121361A patent/EP0997488B1/en not_active Expired - Lifetime
- 1999-10-28 MY MYPI99004652A patent/MY114858A/en unknown
- 1999-10-28 SG SG9905361A patent/SG85143A1/en unknown
- 1999-10-28 CN CN99125985A patent/CN1123590C/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62207332A (ja) * | 1986-03-06 | 1987-09-11 | Central Glass Co Ltd | ポリベンズオキサゾ−ル及びその製造方法 |
GB2188936A (en) * | 1986-03-06 | 1987-10-14 | Central Glass Co Ltd | Aromatic polyamides and polybenzoxazoles having diphenylhexafluoropropane units |
JPS63318A (ja) * | 1986-06-20 | 1988-01-05 | Central Glass Co Ltd | 芳香族ポリアミドの製造方法 |
US5021320A (en) * | 1986-10-02 | 1991-06-04 | Hoechst Celanese Corporation | Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist |
US5492996A (en) * | 1995-02-21 | 1996-02-20 | The United States Of America As Represented By The Secretary Of The Air Force | Alcohol soluble benzazole polymers |
US5493005A (en) * | 1995-02-21 | 1996-02-20 | The United States Of America As Represented By The Secretary Of The Air Force | Hydroxy-pendent benzoxazole copolymers |
US5498784A (en) * | 1995-02-21 | 1996-03-12 | The United States Of America As Represented By The Secretary Of The Air Force | Phosphonic acid-pendent benzoxazole copolymers |
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MY114858A (en) | 2003-01-31 |
DE69916742D1 (de) | 2004-06-03 |
US6114497A (en) | 2000-09-05 |
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