CN112063994A - 用于清洁石英外延腔室的方法 - Google Patents

用于清洁石英外延腔室的方法 Download PDF

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CN112063994A
CN112063994A CN202010493392.5A CN202010493392A CN112063994A CN 112063994 A CN112063994 A CN 112063994A CN 202010493392 A CN202010493392 A CN 202010493392A CN 112063994 A CN112063994 A CN 112063994A
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G.戴耶
J.马吉蒂斯
J.托尔
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Abstract

公开了一种原位清洁外延反应腔室的方法。该方法可包括预涂布步骤、高温烘烤步骤和气体蚀刻步骤。该方法能够去除可能由石英制成的在反应腔室内积聚的残留物。

Description

用于清洁石英外延腔室的方法
技术领域
本发明涉及一种用于加工半导体基板的反应系统。具体而言，本发明涉及在反应系统的内壁上发生化学残留物的形成之后清洁反应系统。
背景技术
已知在特定的半导体应用像例如NMOS器件中采用外延工艺。这些工艺利用的化学前体通常具有在反应系统的腔室壁上形成厚残留物涂层的倾向。腔室壁通常由石英制成，这是由于石英具有杂质少、对受热的化学物质稳健并且透明的性质。
当务之急是要不时去除形成在石英壁上的残留物。由于引入热漂移、颗粒污染和/或高的掺杂剂背景浓度，故残留物可能不利地影响外延膜的形成。在一些情况下，残留物可能阻碍热能从加热源向晶片的传递；最终导致工艺漂移和/或膜均匀性损失。由残留物生成的颗粒很可能脱落，并可能导致膜缺陷。还存在工艺过程中从残留物脱气的可能性。在晶片上游有涂层的情况下，产生的气体可能干扰晶片的掺杂剂分布。此外，从残留物脱气使得定期维护活动因气体的毒性而困难。
先前的清洁石英壁的方法可能涉及反应腔室的去除和更换。然而，这需要关停工具，从而导致生产量的降低和工艺变换的可能性。因此，优选进行原位清洁的工艺。如标题为“Device for In-situ Cleaning of an Inductively-coupled Plasma Chambers”的美国专利号6,749,717中所述，现有方法已利用原位生成的等离子体来形成清洁气体，该专利以引用的方式并入本文。然而，等离子体发生器可能生成也可能有害地蚀刻腔室壁的清洁气体。或者，在存在气态HCl流的情况下，一种普通的清洁解决方案可以是加热反应腔室。这种方法的主要缺点在于，通常，反应腔室的外围区域不能变得足够热以具有足够的蚀刻。
在标题为“Etchant Treatment Processes for Substrate Surfaces andChamber Surfaces”的美国专利号8,445,389中公开了含硅材料的去除，该专利以引用的方式并入本文。然而，外延工艺可能导致比含硅材料更难以去除的残留物。
因此，需要一种允许从反应腔室中的壁有效去除外延应用中生成的残留物而不会不利地影响壁的工艺。
发明内容
公开了一种用于原位清洁反应腔室的方法。所述方法包括：用保护性涂层气体预涂布反应腔室内的多个壁，所述保护性涂层气体包含以下中的至少之一：二氯硅烷(DCS)、硅烷或乙硅烷；将反应腔室加热到超过700℃的温度；和使蚀刻剂气体流到反应腔室中；其中所述蚀刻剂气体从所述多个壁去除残留物，所述残留物包含以下中的至少之一：基于砷、磷或锗的材料。
出于概述本发明和所实现的优于现有技术的优势的目的，在本文上述内容中描述了本发明的某些目标和优势。当然，应理解，未必所有此类目标或优势都可根据本发明的任一特定实施例实现。因此，举例来说，所属领域的技术人员将认识到，本发明可按实现或优化本文中教示或表明的一个优势或一组优势的方式体现或实行，而未必实现本文中可能教示或表明的其它目标或优势。
所有这些实施方案均意在包括在所公开的本发明的范围内。对于所属领域的技术人员来说，这些和其它实施例将根据参考附图的某些实施例的以下详细描述而变得显而易见，本发明不限于所公开的任何特定实施例。
附图说明
下文将参照某些实施例的图式来描述本文中所公开的本发明的这些和其它特征、方面和优势，所述实施例意图说明而不是限制本发明。
图1示意了根据本发明的至少一个实施方案的清洁工艺的流程图。
图2示意了能够运行根据本发明的至少一个实施方案的工艺的腔室。
应理解，图中的元件仅为简单和清晰起见示意而不一定按比例绘制。举例来说，图中的一些元件的尺寸可能相对于其它元件放大，以有助于改进对本公开的所说明的实施例的理解。
具体实施方式
尽管下文公开了某些实施例和实例，但所属领域的技术人员将理解，本发明延伸超出了本发明具体公开的实施例和/或用途以及显而易见的修改和其等效物。因此，希望本发明所公开的范围不应受限于下文所描述的特定公开实施例。
用来形成NMOS器件的工艺可形成膜，如第5族的层或其组合。为此，工艺可使用化学前体如胂或膦，或其任何卤代或烷基取代的变体。残留物可包含例如砷、磷、砷化合物(AsXn)、磷化合物(PXn)、三氯化砷、一氢二氯化砷或氯化磷。对于包含化学物质如砷的残留物，这些残留物例如会在工具维护期间对设备工程师造成严重的健康问题。本发明的实施方案旨在将砷、磷和锗化学物质和化合物的存在最小化至接近零浓度以达到美国政府工业卫生学家联合会针对职业暴露极限设定的阈值极限的标准。这些浓度可在大约为现有脱气等待时间的10至60％的较短时间内达到，从而允许更高的生产率。由于完全去除了涂层，故设备工程师的灰尘和残留物暴露也大大减少。清洁后，暴露于设备工程师的胂和氯分别低于百万分之0.005和0.5(ppm)的职业暴露极限。
此外，本发明的实施方案旨在增加石英腔室在需要更换或翻新之前的寿命。本发明的实施方案可允许在更换之前潜在地加工多达10,000至30,000个晶片。鉴于可用石英腔室的行业短缺，腔室寿命的这种延长至关重要。
图1示意了根据本发明的至少一个实施方案的工艺100。工艺100包括：(1)保护性预涂布步骤110；(2)高温烘烤步骤120；和(3)气体蚀刻步骤130。取决于气体蚀刻步骤130中使用的气体，可能需要保护性预涂布步骤110。保护性预涂布步骤110可用来保护反应腔室内的零件。例如，反应腔室中的特定零件可能由碳化硅(SiC)或石墨制成。长时间暴露于特定气态卤化物可能导致SiC或石墨零件的损坏。保护性预涂布步骤110将防止这种来自长时间暴露的损坏。
保护性预涂布步骤110可包括化学前体的流动，如以下中的至少之一：二氯硅烷(DCS)、三氯硅烷(TCS)、硅烷(SiH4)或乙硅烷(Si2H6)。化学前体将在腔室的SiC或石墨零件上以及石英壁上形成层。保护性预涂布步骤110期间反应腔室的温度可在750-950℃之间的范围内。保护性预涂布步骤110可继续直至前体的层形成超过35nm、40nm或45nm的厚度。保护性预涂布步骤110的持续时间可超过180s、210s或240s。
高温烘烤步骤120包括将反应腔室加热到超过700℃、800℃或900℃的温度。高温烘烤步骤120的原因可包括加热反应腔室，尤其是外围区域处，以实现有效的蚀刻化学。高温烘烤步骤还可增加衬托器温度与腔室温度的解耦。高温烘烤步骤120的持续时间可超过160s、170s或180s。高温烘烤步骤120导致热的石英腔室，这可能使得在气体蚀刻步骤130期间更容易去除残留物。
气体蚀刻步骤130可包括使包含氯气(Cl2)或氮气(N2)中的至少之一的气体流过。在使用氯气的情况下，这将消除腔室内对盐酸(HCl)的需求，从而为工具操作员提供更安全的条件。气体蚀刻步骤130的压力可在40-100托、45-90托或50-85托之间的范围内。气体蚀刻步骤130的持续时间可在1至10分钟、1.5至7分钟或2至5分钟的范围内。在气体蚀刻步骤130期间流动的气体可与残留物反应形成氯取代的砷、锗、硅或磷或其任何氯化衍生物。这可例如通过使惰性气体如氮气、氩气或氪气流动而容易地从反应腔室吹扫出。
图2示意了根据本发明的至少一个实施方案的示例性反应系统200。反应系统200包括：反应腔室壳体210；配置为保持基板230的晶片保持器220；第一气体源240；第二气体源250；第三气体源260；入口气体管线270；出口气体管线280；排气装置(exhaust)290；高温计300；和压力控制阀310。第一气体源240可配置为使用来在基板230上形成膜的反应气体流动。第二气体源250可配置为使用来在基板230上形成膜的另一反应气体流动或可配置为使吹扫气体流动。第三气体源260可配置为使蚀刻剂气体流动。
来自第一气体源240、第二气体源250和第三气体源260的气体可通过入口气体管线270流入反应腔室壳体210中。任何剩余气体可通过出口气体管线280吹扫到排气装置290中。另外的气体源可采用另外的入口气体管线。同样，另外的排气装置可采用另外的出口气体管线。
高温计300可嵌入在反应腔室壳体210中。高温计300可配置为测量反应腔室壳体210内的温度。压力控制阀310可配置为控制反应腔室壳体210内的压力。
上述工艺的运行可改善高温计300和压力控制阀310的功能。高温计300和压力控制阀310二者的性能都可能受到膜沉积工艺过程中膜的积累的不利影响。如图1中所示的清洁工艺可去除涂层，否则其将妨碍从高温计300和压力控制阀310的准确读数。清洁工艺还能够去除排气装置前级管线280中的涂层，这可延长前级管线部件280在工具上的寿命或允许前级管线部件280的安全拆卸。
所示和描述的特定实施方案是对本发明和其最佳模式的说明，并非意在以任何方式限制各方面和实施方案的范围。实际上，为了简洁起见，可能未详细描述系统的常规制造、连接、准备和其它功能方面。此外，各种图中所示的连接线旨在表示各种元件之间的示范性功能关系和/或物理联接。许多替代的或附加的功能关系或物理连接可能存在于实际的系统中，和/或在一些实施方案中可能不存在。
应理解，本文描述的配置和/或方法本质上是示范性的，并且这些具体实施例或示例不应在限制意义上予以考虑，因为许多变化是可能的。本文所描述的具体例程或方法可表示任何数目的处理策略中的一个或多个。因此，所示的各种动作可以以所示的顺序执行、以其他顺序执行或者在一些情况下可以省略。
本公开的主题包含本文所公开的各种程序、系统和配置以及其它特征、功能、动作和/或特性以及其任何和所有等效物的所有新颖并且非显而易见的组合和子组合。

Claims (17)

1.一种用于原位清洁反应腔室的方法，所述方法包括：
用保护性涂层气体预涂布反应腔室内的多个壁，所述保护性涂层气体包含以下中的至少之一：二氯硅烷(DCS)、硅烷或乙硅烷；
将所述反应腔室加热到超过700℃的温度；以及
使蚀刻剂气体流动到所述反应腔室中；
其中所述蚀刻剂气体从所述多个壁去除残留物，所述残留物包含以下中的至少之一：基于砷的材料、基于锗的材料、基于硅的材料或基于磷的材料。
2.根据权利要求1所述的方法，其中所述蚀刻剂气体包含以下中的至少之一：氯气(Cl2)或氮气(N2)。
3.根据权利要求1所述的方法，所述方法还在所述反应腔室内包含至少一个零件，其中所述零件包含以下中的至少之一：碳化硅或石墨。
4.根据权利要求1所述的方法，其中在流动步骤期间所述反应腔室的压力在40-100托、45-90托或50-85托之间的范围内。
5.根据权利要求1所述的方法，其中流动步骤的持续时间在1至10分钟、1.5至7分钟或2至5分钟的范围内。
6.根据权利要求1所述的方法，其中在加热步骤期间所述反应腔室的温度超过800℃。
7.根据权利要求1所述的方法，其中在加热步骤期间所述反应腔室的温度超过900℃。
8.根据权利要求1所述的方法，其中加热步骤的持续时间超过160s。
9.根据权利要求1所述的方法，其中加热步骤的持续时间超过170s。
10.根据权利要求1所述的方法，其中加热步骤的持续时间超过180s。
11.根据权利要求1所述的方法，其中所述残留物包含基于砷的材料。
12.根据权利要求11所述的方法，其中去除所述残留物将基于砷的材料的浓度降低到百万分之0.005的水平。
13.根据权利要求2所述的方法，其中所述蚀刻剂气体包含氯气。
14.根据权利要求13所述的方法，其中去除所述残留物将氯气的浓度降低到百万分之0.5的水平。
15.一种半导体膜沉积系统，所述沉积系统包括：
反应腔室；
第一气体源；
第二气体源；
排气装置；
配置为测量所述反应腔室内的温度的高温计；
配置为调节所述反应腔室内的压力的压力控制阀；和
蚀刻剂气体源；
其中所述半导体膜沉积系统配置为执行根据权利要求1所述的方法。
16.根据权利要求15所述的系统，其中所述反应腔室包含石英。
17.根据权利要求15所述的系统，所述系统还包含设置在所述反应腔室内的零件，所述零件包含以下中的至少之一：碳化硅或石墨。
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