TW202108818A - 原位清潔一反應室之方法及半導體膜沉積系統 - Google Patents

原位清潔一反應室之方法及半導體膜沉積系統 Download PDF

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TW202108818A
TW202108818A TW109118780A TW109118780A TW202108818A TW 202108818 A TW202108818 A TW 202108818A TW 109118780 A TW109118780 A TW 109118780A TW 109118780 A TW109118780 A TW 109118780A TW 202108818 A TW202108818 A TW 202108818A
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格雷戈里 德葉
喬 瑪格蒂斯
約翰 托勒
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Abstract

揭示一種原位清潔一磊晶反應室之方法。此方法可包括一預塗佈步驟、一高溫焙烤步驟、以及一氣體蝕刻步驟。此方法能夠移除累積在可由石英製成之反應室內的殘留物。

Description

原位清潔一反應室之方法及半導體膜沉積系統
本發明係關於一反應系統，其用於處理半導體基材。具體而言，本發明係關於在反應室之內壁上發生化學殘留物的形成之後清潔反應室。
已知磊晶(Epitaxial processes)製程係用在特定的半導體應用(例如，N型金氧半導體(NMOS)裝置)中。這些製程使用通常具有在反應室的室壁上形成厚殘留物塗層的傾向之化學前驅物。由於石英的低雜質、對加熱化學品的耐變性(robustness)、及透明度的性質，室壁一般係以石英製成。
不時移除石英壁上所形成的殘留物係強制性的。由於引入熱漂移(thermal drift)、粒子污染、及/或高摻雜物背景濃度，殘留物可不利地影響磊晶膜的形成。在一些情況下，殘留物可阻礙熱能從加熱源至晶圓之通道；最終導致製程漂移及/或喪失膜的均勻性。由殘留物所產生的粒子有可能脫落(shed)，並可導致膜的缺陷。亦存在製程期間從殘留物釋氣(outgassing)的可能性。若在晶圓上游存在塗層，則所產生的氣體可能會干擾晶圓的摻雜物輪廓(profile)。進一步地，由於氣體的毒性，來自殘留物的釋氣使週期性維護活動難以進行。
先前用以清潔石英壁之方法可有關於反應室的移除及更換。然而，此需要將工具停機，導致減少的產出量及製程偏移(process shift)的可能性。因此，執行原位(in-situ)清潔的製程係較佳的。先前方法已使用原位產生的電漿來形成清潔氣體，如發明名稱為「Device for In-situ Cleaning of an Inductively-coupled Plasma Chambers」之美國專利第6,749,717號中所述，特此以引用方式將其併入。然而，電漿產生器可產生亦可能會有害地蝕刻室壁之清潔氣體。替代地，常見的清潔解決方案可係在氣態鹽酸(HCl)流存在時加熱反應室。此方法的主要缺點在於，一般而言，反應室的周邊區域無法達到具有充分蝕刻的足夠熱度。
含矽材料之移除係揭示於發明名稱為「Etchant Treatment Processes for Substrate Surfaces and Chamber Surfaces」之美國專利第8,445,389號中，特此以引用方式將其併入本文中。然而，磊晶製程可能會導致比含矽材料更難以移除的殘留物。
因此，對於允許從反應室壁有效地移除磊晶應用中所產生的殘留物而不會不利地影響壁之製程存在有需求。
揭示一種用於原位清潔一反應室之方法。此方法包括：以一保護性塗佈氣體預塗佈一反應室內的複數個壁，保護性塗佈氣體包括下列之至少一者：二氯矽烷(dichlorosilane，DCS)、矽烷(silane)、或二矽烷(disilane)；將反應室加熱至超過700o C的一溫度；及使一蝕刻劑氣體流動到反應室中；其中蝕刻劑氣體從複數個壁移除一殘留物，殘留物包括下列之至少一者：砷基材料、磷基材料、或鍺基材料。
出於概述本發明及所達成之優於先前技術之優點的目的，已在上文中描述本發明之某些目標及優點。當然，應瞭解的是，可無須根據本發明之任何具體實施例，來達成所有此類目標或優點。因此，舉例而言，所屬技術領域中具有通常知識者將認知到，可以達成或最佳化如本文中所教示或建議之一個優點或一組優點，而無須達成本文中可教示或建議之其他目標或優點的方式，來實施或實行本發明。
所有這些實施例均意欲屬於本文所揭示之本發明的範疇。所屬技術領域中具有通常知識者將從下文參照附圖詳細描述的某些實施例輕易地明白這些及其他實施例，本發明並未受限於所揭示的任何特定實施例。
雖然在下文揭示某些實施例及實例，所屬技術領域中具有通常知識者將瞭解本發明延伸超出本發明及其明顯的修改與均等物之具體揭示的實施例及/或用途。因此，意欲使所揭示之本發明的範疇不應受下文所述之具體揭示實施例的限制。
用於形成 N型金氧半導體裝置的製程可形成膜(諸如第5族(group 5)的層或其一組合)。欲實現此，製程可使用化學前驅物(諸如胂(arsine)或膦(phosphine)或者其任何鹵化或烷基取代變體)。例如，殘留物可包括砷(arsenic)、磷(phosphorous)、砷化合物(arsenic compounds) (AsXn )、磷化合物(phosphorous compounds) (PXn )、三氯化砷(arsenic trichloride)、二氯單氫化砷(arsenic dichloromonohydride)、或氯化磷(phosphorous chloride)。例如，對有關於例如砷的化學品之殘留物而言，在工具維護期間，殘留物可能導致設備工程師之嚴重的健康問題。本發明之實施例係關於將砷、磷、及鍺(germanium)化學品及化合物的存在最小化至接近零濃度，以符合由美國政府工業衛生師協會(American Conference of Governmental Industrial Hygienists)針對職業暴露限值之臨限值限制所設定的標準。可以在較短的時間(大約10%至60%的現有釋氣等待時間)內符合這些濃度，允許較大的產量。由於塗層完整移除，因此亦大幅減少設備工程師至粉塵及殘留物的暴露。在清潔之後，設備工程師上的砷及氯氣(chlorine)係分別低於百萬分之0.005 (0.005 ppm)及百萬分之0.5 (0.5 ppm)之職業暴露限值。
此外，本發明之實施例係關於增加石英室在其必須進行更換或整修(refurbished)之任一者之前的壽命。在更換之前，本發明之實施例可潛在地允許多達10,000至30,000個晶圓之處理。考慮到產業在石英室 可獲得性(availability)方面的短缺，這類的室壽命之延長係關鍵的。
第1圖繪示根據本發明之至少一實施例之製程100。製程100包括：(1)保護性預塗佈步驟110；(2)高溫焙烤步驟120；及(3)氣體蝕刻步驟130。取決於氣體蝕刻步驟130中所用的氣體，可能會需要保護性預塗佈步驟110。保護性預塗佈步驟110可用以保護反應室內的部件。例如，反應室中的特定部件可以碳化矽(silicon carbide，SiC)或石墨(graphite)製成。長時間暴露至特定氣態鹵化物可能會導致碳化矽或石墨部件受損。保護性預塗佈步驟110將防止此由於長時間暴露之受損。
保護性預塗佈步驟110可包括化學前驅物之流動，此化學前驅物係諸如下列之至少一者：二氯矽烷(dichlorosilane，DCS)、三氯矽烷(trichlorosilane，TCS)、矽烷(silane，SiH4 )、或二矽烷(disilane，Si2 H6 )。化學前驅物將在室的碳化矽或石墨部件以及石英壁上形成一層。保護性預塗佈步驟110期間之反應室溫度的範圍可介於750ºC至950ºC之間。保護性預塗佈步驟110可持續直到一層前驅物形成超過35奈米(nm)、40奈米、或45 奈米的厚度。保護性預塗佈步驟110的持續時間可超過180秒、210秒、或240秒。
高溫焙烤步驟120包括將反應室加熱至超過700o C、800o C、或900o C的溫度。高溫焙烤步驟120的原因可包括加熱反應室(尤其在周邊區域處)，使得可以發生有效的蝕刻化學(etching chemistry)。高溫焙烤步驟亦可包括將基座溫度與室溫度解耦接(decoupling)。高溫焙烤步驟120的持續時間可超過160秒、170秒、或180秒。高溫焙烤步驟120導致熱石英室，其可導致在氣體蝕刻步驟130期間較容易移除殘留物。
氣體蝕刻步驟130可包括使氣體流動，氣體包括下列之至少一者：氯氣(chlorine，Cl2 )或氮氣(nitrogen，N2 )。在使用氯氣的那些狀況下，此將排除室內對鹽酸(hydrochloric acid，HCl)的需求，導致對工具操作者更安全的條件。氣體蝕刻步驟130的壓力範圍可介於40托耳(Torr)至100 托耳、45托耳至90 托耳、或50托耳至85 托耳之間。氣體蝕刻步驟130的持續時間範圍可從1分鐘至10分鐘、1.5分鐘至7分鐘、或2分鐘至5分鐘。在氣體蝕刻步驟130期間流動的氣體可與殘留物起反應，以形成氯取代砷、鍺、矽、或磷、或者其任何氯化衍生物。此可藉由例如使惰性氣體(諸如氮氣、氬氣、或氪氣)流動，而輕易地從反應室吹掃。
第2圖繪示根據本發明之至少一實施例之例示性反應系統200。反應系統200包括：反應室殼體210；晶圓固持器220，其配置以固持基材230；第一氣源240；第二氣源250；第三氣源260；入口氣體管線270；出口氣體管線280；排氣裝置290；高溫計300；壓力控制閥310。第一氣源240可配置以使反應氣體流動，此反應氣體係用以在基材230上形成膜。第二氣源250可配置以使另一反應氣體流動或可配置以使吹掃氣體流動，反應氣體係用以在基材230上形成膜。第三氣源260可配置以使蝕刻劑氣體流動。
來自第一氣源240、第二氣源250、及第三氣源260之氣體可流過入口氣體管線270進入反應室殼體210中。任何餘留氣體可通過出口氣體管線280沖出至排氣裝置290中。額外的氣源可與額外的入口氣體管線併用。同樣地，額外的排氣可與額外的出口氣體管線併用。
高溫計300可嵌入在反應室殼體210中。高溫計300可配置以測量反應室殼體210內的溫度。壓力控制閥310可配置以控制反應室殼體210內的壓力。
上述製程之運行可改善高溫計300及壓力控制閥310的功能。高溫計300及壓力控制閥310兩者的性能可受到膜沉積製程期間之膜積聚的不利影響。清潔製程(諸如第1圖所示者)可移除塗層，此塗層將以其他方式妨礙來自高溫計300及壓力控制閥310的準確讀數。清潔製程亦能夠移除排氣前級管線(foreline)280中的塗層，其可延長前級管線組件280在工具上的壽命或使得可以安全地拆卸前級管線組件280。
所顯示及描述之特定實施方案係對本發明及其最佳模式之說明，且並非意欲以任何不同方式限制態樣及實施方案之範疇。實際上，為簡潔起見，可不詳細描述系統之習知的製造、連接、製備、及其他功能性態樣。此外，在不同圖式中所示之連接線係意欲表示不同元件之間的例示性功能關係及/或實體耦接。實際系統中可存在許多替代或額外的功能關係或實體連接，且/或在一些實施例中可不存在。
應瞭解，本文所述之配置及/或方法本質上係例示性，且這些特定實施例或實例不應視為限制意義，因為可有眾多變化。本文所述之特定例行程序或方法可表示任何數目的處理策略之一或多者。因此，所說明之各種動作可於所說明之順序執行，以其他順序執行，或在一些情況下被省略。
本揭露之主題包括本文中所揭示之各種製程、系統、及配置、以及其他特徵、功能、動作、及/或性質的所有新穎的及非顯而易見的組合及子組合以及其等之任何及所有均等物。
100:製程 110:保護性預塗佈步驟 120:高溫焙烤步驟 130:氣體蝕刻步驟 200:反應系統 210:反應室殼體 220:晶圓固持器 230:基材 240:第一氣源 250:第二氣源 260:第三氣源 270:入口氣體管線 280:出口氣體管線,排氣前級管線,前級管線組件 290:排氣裝置 300:高溫計 310:壓力控制閥
本文所揭示的本發明之這些及其他特徵、態樣、及優點在下文參照某些實施例之圖式描述，此等實施例係意欲說明而非限制本發明。 第1圖繪示根據本發明之至少一實施例之清潔製程的流程圖。 第2圖繪示根據本發明之至少一實施例之能夠運行製程的室。
將理解到，圖式中之元件係為了簡單及清楚起見而繪示，且不一定按比例繪製。舉例而言，附圖中一些元件之尺寸可相對於其他元件而放大，以幫助提昇對本揭示內容所說明之實施例的理解。
100:製程
110:保護性預塗佈步驟
120:高溫焙烤步驟
130:氣體蝕刻步驟

Claims (17)

  1. 一種原位清潔一反應室之方法，包括： 以一保護性塗佈氣體預塗佈一反應室內的複數個壁，該保護性塗佈氣體包括下列之至少一者：二氯矽烷、矽烷、或二矽烷； 將該反應室加熱至超過700o C之一溫度；以及 使一蝕刻劑氣體流動到該反應室中； 其中該蝕刻劑氣體從該等壁移除一殘留物，該殘留物包括下列之至少一者：砷基材料、鍺基材料、矽基材料、或磷基材料。
  2. 如請求項1之方法，其中該蝕刻劑氣體包括下列之至少一者：氯氣或氮氣。
  3. 如請求項1之方法，更包括在該反應室內之至少一部件，其中該部件包括下列之至少一者：碳化矽或石墨。
  4. 如請求項1之方法，其中在流動之該步驟期間，該反應室的一壓力範圍係介於40托耳至100 托耳、45托耳至90 托耳、或50托耳至85 托耳之間。
  5. 如請求項1之方法，其中流動之該步驟具有之一持續時間範圍係從1分鐘至10分鐘、1.5分鐘至7分鐘、或2分鐘至5分鐘。
  6. 如請求項1之方法，其中在加熱之該步驟期間，該反應室之一溫度超過800o C。
  7. 如請求項1之方法，其中在加熱之該步驟期間，該反應室之一溫度超過900o C。
  8. 如請求項1之方法，其中加熱之該步驟具有超過160秒之一持續時間。
  9. 如請求項1之方法，其中加熱之該步驟具有超過170秒之一持續時間。
  10. 如請求項1之方法，其中加熱之該步驟具有超過180秒之一持續時間。
  11. 如請求項1之方法，其中該殘留物包括一砷基材料。
  12. 如請求項11之方法，其中移除該殘留物將砷基材料之一濃度減少至百萬分之0.005之一位準。
  13. 如請求項2之方法，其中該蝕刻劑氣體包括氯氣。
  14. 如請求項13之方法，其中移除該殘留物將氯氣之一濃度減少至百萬分之0.5之一位準。
  15. 一種半導體膜沉積系統，包括： 一反應室； 一第一氣源； 一第二氣源； 一排氣裝置； 一高溫計，配置以測量該反應室內之一溫度； 一壓力控制閥，配置以調節該反應室內之一壓力；以及 一蝕刻劑氣源； 其中該半導體膜沉積系統配置以施行如請求項1之方法。
  16. 如請求項15之系統，其中該反應室包括石英。
  17. 如請求項15之系統，更包括設置於該反應室內之一部件，該部件包括下列之至少一者：碳化矽或石墨。
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