CN1111760C - 用于光致抗蚀剂组合物的抗反射涂层 - Google Patents

用于光致抗蚀剂组合物的抗反射涂层 Download PDF

Info

Publication number
CN1111760C
CN1111760C CN97198410A CN97198410A CN1111760C CN 1111760 C CN1111760 C CN 1111760C CN 97198410 A CN97198410 A CN 97198410A CN 97198410 A CN97198410 A CN 97198410A CN 1111760 C CN1111760 C CN 1111760C
Authority
CN
China
Prior art keywords
alkyl
vinyl
antireflective composition
coating
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN97198410A
Other languages
English (en)
Chinese (zh)
Other versions
CN1232552A (zh
Inventor
I·穆库洛奇
R·R·达米尔
A·J·科尔索
丁术李
D·L·杜哈姆
卢炳宏
康鸣
D·N·克哈纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Clariant International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant International Ltd filed Critical Clariant International Ltd
Publication of CN1232552A publication Critical patent/CN1232552A/zh
Application granted granted Critical
Publication of CN1111760C publication Critical patent/CN1111760C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
    • G03C1/825—Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
    • G03C1/835—Macromolecular substances therefor, e.g. mordants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/151—Matting or other surface reflectivity altering material

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN97198410A 1996-09-30 1997-09-26 用于光致抗蚀剂组合物的抗反射涂层 Expired - Lifetime CN1111760C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/724,109 1996-09-30
US08/724,109 US5733714A (en) 1996-09-30 1996-09-30 Antireflective coating for photoresist compositions

Publications (2)

Publication Number Publication Date
CN1232552A CN1232552A (zh) 1999-10-20
CN1111760C true CN1111760C (zh) 2003-06-18

Family

ID=24909045

Family Applications (1)

Application Number Title Priority Date Filing Date
CN97198410A Expired - Lifetime CN1111760C (zh) 1996-09-30 1997-09-26 用于光致抗蚀剂组合物的抗反射涂层

Country Status (8)

Country Link
US (1) US5733714A (enExample)
EP (1) EP0929844B1 (enExample)
JP (1) JP3835823B2 (enExample)
KR (1) KR100484046B1 (enExample)
CN (1) CN1111760C (enExample)
DE (1) DE69709140T2 (enExample)
TW (1) TW419618B (enExample)
WO (1) WO1998014834A1 (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW406215B (en) * 1996-08-07 2000-09-21 Fuji Photo Film Co Ltd Composition for anti-reflective coating material in lithographic process, and process for forming resist pattern
JPH1165125A (ja) * 1997-08-21 1999-03-05 Tokyo Ohka Kogyo Co Ltd パターン形成方法
US5962195A (en) * 1997-09-10 1999-10-05 Vanguard International Semiconductor Corporation Method for controlling linewidth by etching bottom anti-reflective coating
US5919599A (en) * 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
JP4053631B2 (ja) * 1997-10-08 2008-02-27 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体
US5935760A (en) * 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
US6051369A (en) * 1998-01-08 2000-04-18 Kabushiki Kaisha Toshiba Lithography process using one or more anti-reflective coating films and fabrication process using the lithography process
TW457403B (en) * 1998-07-03 2001-10-01 Clariant Int Ltd Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom
JP3852889B2 (ja) 1998-09-24 2006-12-06 富士写真フイルム株式会社 フォトレジスト用反射防止膜材料組成物
US6048662A (en) * 1998-12-15 2000-04-11 Bruhnke; John D. Antireflective coatings comprising poly(oxyalkylene) colorants
US6251562B1 (en) 1998-12-23 2001-06-26 International Business Machines Corporation Antireflective polymer and method of use
US6569595B1 (en) * 1999-02-25 2003-05-27 Kabushiki Kaisha Toshiba Method of forming a pattern
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6187506B1 (en) * 1999-08-05 2001-02-13 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
KR100557606B1 (ko) * 1999-08-31 2006-03-10 주식회사 하이닉스반도체 유기 난반사 방지용 중합체
KR100355604B1 (ko) * 1999-12-23 2002-10-12 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
US6319835B1 (en) * 2000-02-25 2001-11-20 Shipley Company, L.L.C. Stripping method
US6420088B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
KR100687850B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
US6764809B2 (en) * 2000-10-12 2004-07-20 North Carolina State University CO2-processes photoresists, polymers, and photoactive compounds for microlithography
KR20030068729A (ko) * 2002-02-16 2003-08-25 삼성전자주식회사 반사 방지용 광흡수막 형성 조성물 및 이를 이용한 반도체소자의 패턴 형성 방법
KR100470938B1 (ko) * 2002-05-17 2005-02-22 (주)모레이 유기 난반사 방지막 형성용 광흡수성 고분자, 이를포함하는 조성물, 및 이를 이용한 반도체 소자 패턴의형성 방법
US7323290B2 (en) * 2002-09-30 2008-01-29 Eternal Technology Corporation Dry film photoresist
US7148265B2 (en) * 2002-09-30 2006-12-12 Rohm And Haas Electronic Materials Llc Functional polymer
KR100494147B1 (ko) * 2002-10-08 2005-06-13 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
US7338742B2 (en) * 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7501229B2 (en) 2004-03-16 2009-03-10 Nissan Chemical Industries, Ltd. Anti-reflective coating containing sulfur atom
JP4835854B2 (ja) * 2004-07-02 2011-12-14 日産化学工業株式会社 ハロゲン原子を有するナフタレン環を含むリソグラフィー用下層膜形成組成物
US20060057501A1 (en) * 2004-09-15 2006-03-16 Hengpeng Wu Antireflective compositions for photoresists
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US7399581B2 (en) * 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
KR100687873B1 (ko) * 2005-05-20 2007-02-27 주식회사 하이닉스반도체 유기 반사 방지막 조성물 및 이를 이용한 패턴 형성 방법
US20070083995A1 (en) * 2005-10-12 2007-04-19 Purdy William J Fluidized positioning and protection system
US7553905B2 (en) * 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
US8431648B2 (en) * 2006-03-31 2013-04-30 Milliken & Company Coated substrates and polymer dispersions suitable for use in making the same
US7662461B2 (en) 2006-03-31 2010-02-16 Milliken & Company Synthetic leather articles and methods for producing the same
US7872069B2 (en) * 2006-03-31 2011-01-18 Milliken & Company Coated substrates and polymer dispersions suitable for use in making the same
US7774104B2 (en) * 2006-12-27 2010-08-10 Fujitsu Ten Limited Electronic apparatus and electronic system
US20080162044A1 (en) * 2006-12-28 2008-07-03 Fujitsu Ten Limited In-vehicle electronic apparatus and in-vehicle electronic system
US7860643B2 (en) * 2006-12-28 2010-12-28 Fujitsu Ten Limited In-vehicle detachably electronic apparatus and in-vehicle electronic system
US8706396B2 (en) * 2006-12-28 2014-04-22 Fujitsu Ten Limited Electronic apparatus and electronic system
US7904236B2 (en) * 2006-12-28 2011-03-08 Fujitsu Ten Limited Electronic apparatus and electronic system
JP4842785B2 (ja) * 2006-12-04 2011-12-21 富士通テン株式会社 車載用電子システム及び車載電子装置
US20080159557A1 (en) * 2006-12-27 2008-07-03 Fujitsu Ten Limited Electronic apparatus, electronic system and method of controlling sound output
US7684200B2 (en) * 2006-12-28 2010-03-23 Fujitsu Ten Limited Electronic apparatus and electronic system
US20080161950A1 (en) * 2006-12-28 2008-07-03 Fujitsu Ten Limited Electronic system, electronic apparatus and method of operating audio unit
US7765046B2 (en) * 2006-12-28 2010-07-27 Fujitsu Ten Limited In-vehicle electronic apparatus and in-vehicle electronic system
US20080157999A1 (en) * 2006-12-28 2008-07-03 Fujitsu Ten Limited Electronic apparatus, electronic system and method of controlling audio output
US7869196B2 (en) * 2006-12-28 2011-01-11 Fujitsu Ten Limited Electronic apparatus
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
US8141667B2 (en) * 2008-06-17 2012-03-27 The Board Of Trustees Of The University Of Alabama For And On Behalf Of Its Component Institution, The University Of Alabama Hybrid dinghy pusher
WO2010021030A1 (ja) * 2008-08-20 2010-02-25 富士通株式会社 レジスト増感膜形成用材料、半導体装置の製造方法、半導体装置、及び磁気ヘッド
JP2014074730A (ja) * 2011-02-04 2014-04-24 Nissan Chem Ind Ltd 非感光性レジスト下層膜形成組成物
US8623589B2 (en) 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
KR101466147B1 (ko) * 2011-12-05 2014-11-27 제일모직 주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한　컬러필터
KR101618689B1 (ko) 2012-12-24 2016-05-09 제일모직 주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한　컬러필터
DE102019134535B4 (de) * 2019-08-05 2023-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Materialien für unteren antireflexbelag
CN116102939B (zh) * 2021-11-09 2023-10-03 上海新阳半导体材料股份有限公司 一种深紫外光刻用底部抗反射涂层及其制备方法和应用
CN116102937B (zh) * 2021-11-09 2023-10-20 上海新阳半导体材料股份有限公司 一种底部抗反射涂层及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294680A (en) * 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
US5525457A (en) * 1994-12-09 1996-06-11 Japan Synthetic Rubber Co., Ltd. Reflection preventing film and process for forming resist pattern using the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851515A (ja) * 1981-09-22 1983-03-26 Fujitsu Ltd レジスト膜の露光方法
DE3211400A1 (de) * 1982-03-27 1983-09-29 Basf Ag, 6700 Ludwigshafen Polymere mit mesogenen gruppen und farbstoffresten in den seitenketten
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4617252A (en) * 1983-07-01 1986-10-14 Philip A. Hunt Chemical Corporation Antireflective coatings for use in the manufacture of semi-conductor devices, methods and solutions for making such coatings, and the method for using such coatings to absorb light in ultraviolet photolithography processes
US5207952A (en) * 1986-10-10 1993-05-04 University Of Southern Mississippi Side chain liquid crystalline polymers as nonlinear optical materials
JPS63202915A (ja) * 1987-02-19 1988-08-22 Oki Electric Ind Co Ltd 半導体装置の製造方法
DE3817012A1 (de) * 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
EP0440374B1 (en) * 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
FR2668158B1 (fr) * 1990-10-22 1994-05-06 Thomson Csf Polymere reticulable pour applications en optique non lineaire.
DE69214035T2 (de) * 1991-06-28 1997-04-10 Ibm Reflexionsverminderde Überzüge
US5472827A (en) * 1991-12-30 1995-12-05 Sony Corporation Method of forming a resist pattern using an anti-reflective layer
JP2791525B2 (ja) * 1992-04-16 1998-08-27 三菱電機株式会社 反射防止膜の選定方法およびその方法により選定された反射防止膜
DE4232394A1 (de) * 1992-09-26 1994-03-31 Basf Ag Copolymerisate mit nichtlinear optischen Eigenschaften und deren Verwendung
FR2709755B1 (fr) * 1993-09-06 1995-11-17 France Telecom Matériau polymère réticulable, utilisable en optique non linéaire, et son procédé d'obtention.
CN1041243C (zh) * 1993-10-12 1998-12-16 科莱恩金融(Bvi)有限公司 用于光刻胶的防反射涂料组合物及在基片上制作图象的方法
JP3334304B2 (ja) * 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
US5731385A (en) * 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
JPH07333855A (ja) * 1994-06-10 1995-12-22 Mitsubishi Chem Corp 反射防止塗布組成物及びパターン形成方法
JP3248353B2 (ja) * 1994-06-29 2002-01-21 ソニー株式会社 反射防止膜の設計方法
TW394850B (en) * 1996-03-07 2000-06-21 Clariant Finance Bvi Ltd Bottom antireflective coatings through refractive index modification by anomalous dispersion
WO1997033200A1 (en) * 1996-03-07 1997-09-12 Clariant International, Ltd. Light-absorbing antireflective layers with improved performance due to refractive index optimization
US5652317A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Antireflective coatings for photoresist compositions
US5652297A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Aqueous antireflective coatings for photoresist compositions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294680A (en) * 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
US5525457A (en) * 1994-12-09 1996-06-11 Japan Synthetic Rubber Co., Ltd. Reflection preventing film and process for forming resist pattern using the same

Also Published As

Publication number Publication date
KR100484046B1 (ko) 2005-04-20
TW419618B (en) 2001-01-21
EP0929844A1 (en) 1999-07-21
US5733714A (en) 1998-03-31
DE69709140T2 (de) 2002-07-11
DE69709140D1 (de) 2002-01-24
KR20000048649A (ko) 2000-07-25
JP3835823B2 (ja) 2006-10-18
WO1998014834A1 (en) 1998-04-09
CN1232552A (zh) 1999-10-20
JP2001502439A (ja) 2001-02-20
EP0929844B1 (en) 2001-12-12

Similar Documents

Publication Publication Date Title
CN1111760C (zh) 用于光致抗蚀剂组合物的抗反射涂层
CN1148609C (zh) 感光树脂组合物用抗反射涂料
CN1160599C (zh) 吸光聚合物
CN1196030C (zh) 用于光致抗蚀剂组合物的抗反射涂料
CN1215381C (zh) 用于深紫外线光刻胶的防反射组合物
CN1257435C (zh) 形成光刻用防反射膜的组合物
CN100335973C (zh) 负性作用可光成像底部抗反射涂层
CN1159627C (zh) 用于光刻胶组合物的抗反射涂料组合物及光刻胶成像方法
KR20010023776A (ko) 저면 반사 방지막용 조성물 및 이에 사용하기 위한 신규중합체 염료
CN1385757A (zh) 抗反射涂层组合物
CN1545645A (zh) 形成光刻用防反射膜的组合物
CN101034259A (zh) 使用第一最小值底部抗反射涂层组合物制备图像的方法
CN1630551A (zh) 生产光致抗蚀剂组合物用成膜树脂的方法
CN1714316A (zh) 光刻胶用抗反射组合物
JP5418906B2 (ja) 反射防止コーティング組成物
CN1181397C (zh) 含芳基联亚氨基染料的抗反射底涂料及其形成影像的方法
CN1249824A (zh) 包含新的光活性化合物的正性光刻胶
CN1099429C (zh) 酚甲醛缩合物的分馏和由其生产的光敏抗蚀剂组合物
HK1049888A1 (zh) 用於光刻膠的抗反射塗料
CN1335945A (zh) 抗反射涂层组合物
JPH06110199A (ja) 反射防止膜およびレジストパターンの形成方法
CN1221497A (zh) 氨基彩色发色团的金属离子含量的降低及其用于合成光致抗蚀剂的低金属含量抗反射底涂层
HK1076629A (en) Positive-working photoimageable bottom antireflective coating
HK1076655A (en) Negative-working photoimabeable bottom antireflective coating

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: AZ ELECTRONIC MATERIALS JAPAN

Free format text: FORMER OWNER: CLARIANT INTERNATIONAL LTD.

Effective date: 20050513

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20050513

Address after: Tokyo, Japan

Patentee after: AZ Electronic Materials Japan Co., Ltd.

Address before: Swiss Mu Tengci

Patentee before: Keralyant International Co., Ltd.

ASS Succession or assignment of patent right

Owner name: AZ ELECTRONIC MATERIALS IP CO., LTD.

Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS JAPAN CO., LTD.

Effective date: 20120926

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20120926

Address after: Tokyo, Japan

Patentee after: AZ Electronic Materials IP Co., Ltd.

Address before: Tokyo, Japan

Patentee before: AZ Electronic Materials Japan Co., Ltd.

ASS Succession or assignment of patent right

Owner name: MERCK PATENT GMBH

Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP CO., LTD.

Effective date: 20150414

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20150414

Address after: Darmstadt

Patentee after: Merck Patent GmbH

Address before: Tokyo, Japan

Patentee before: AZ Electronic Materials IP Co., Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20030618