JP3835823B2 - フォトレジスト組成物のための反射防止膜 - Google Patents
フォトレジスト組成物のための反射防止膜 Download PDFInfo
- Publication number
- JP3835823B2 JP3835823B2 JP51621098A JP51621098A JP3835823B2 JP 3835823 B2 JP3835823 B2 JP 3835823B2 JP 51621098 A JP51621098 A JP 51621098A JP 51621098 A JP51621098 A JP 51621098A JP 3835823 B2 JP3835823 B2 JP 3835823B2
- Authority
- JP
- Japan
- Prior art keywords
- alkyl
- polymer
- antireflection film
- composition according
- film composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 0 CCCCC1C(C(*C2CCCC2)C(CCCCC*)CC(C)C)=CC(C(C)CC(C)C2CC2)C1C Chemical compound CCCCC1C(C(*C2CCCC2)C(CCCCC*)CC(C)C)=CC(C(C)CC(C)C2CC2)C1C 0.000 description 2
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
- G03C1/825—Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
- G03C1/835—Macromolecular substances therefor, e.g. mordants
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/151—Matting or other surface reflectivity altering material
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/724,109 US5733714A (en) | 1996-09-30 | 1996-09-30 | Antireflective coating for photoresist compositions |
| US08/724,109 | 1996-09-30 | ||
| PCT/EP1997/005281 WO1998014834A1 (en) | 1996-09-30 | 1997-09-26 | Antireflective coating for photoresist compositions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001502439A JP2001502439A (ja) | 2001-02-20 |
| JP2001502439A5 JP2001502439A5 (enExample) | 2005-05-12 |
| JP3835823B2 true JP3835823B2 (ja) | 2006-10-18 |
Family
ID=24909045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51621098A Expired - Fee Related JP3835823B2 (ja) | 1996-09-30 | 1997-09-26 | フォトレジスト組成物のための反射防止膜 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5733714A (enExample) |
| EP (1) | EP0929844B1 (enExample) |
| JP (1) | JP3835823B2 (enExample) |
| KR (1) | KR100484046B1 (enExample) |
| CN (1) | CN1111760C (enExample) |
| DE (1) | DE69709140T2 (enExample) |
| TW (1) | TW419618B (enExample) |
| WO (1) | WO1998014834A1 (enExample) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW406215B (en) | 1996-08-07 | 2000-09-21 | Fuji Photo Film Co Ltd | Composition for anti-reflective coating material in lithographic process, and process for forming resist pattern |
| JPH1165125A (ja) * | 1997-08-21 | 1999-03-05 | Tokyo Ohka Kogyo Co Ltd | パターン形成方法 |
| US5962195A (en) * | 1997-09-10 | 1999-10-05 | Vanguard International Semiconductor Corporation | Method for controlling linewidth by etching bottom anti-reflective coating |
| US5919599A (en) * | 1997-09-30 | 1999-07-06 | Brewer Science, Inc. | Thermosetting anti-reflective coatings at deep ultraviolet |
| JP4053631B2 (ja) * | 1997-10-08 | 2008-02-27 | Azエレクトロニックマテリアルズ株式会社 | 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体 |
| US5935760A (en) * | 1997-10-20 | 1999-08-10 | Brewer Science Inc. | Thermosetting polyester anti-reflective coatings for multilayer photoresist processes |
| US6051369A (en) * | 1998-01-08 | 2000-04-18 | Kabushiki Kaisha Toshiba | Lithography process using one or more anti-reflective coating films and fabrication process using the lithography process |
| TW457403B (en) * | 1998-07-03 | 2001-10-01 | Clariant Int Ltd | Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom |
| JP3852889B2 (ja) | 1998-09-24 | 2006-12-06 | 富士写真フイルム株式会社 | フォトレジスト用反射防止膜材料組成物 |
| US6048662A (en) * | 1998-12-15 | 2000-04-11 | Bruhnke; John D. | Antireflective coatings comprising poly(oxyalkylene) colorants |
| US6251562B1 (en) | 1998-12-23 | 2001-06-26 | International Business Machines Corporation | Antireflective polymer and method of use |
| US6569595B1 (en) * | 1999-02-25 | 2003-05-27 | Kabushiki Kaisha Toshiba | Method of forming a pattern |
| US6316165B1 (en) * | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
| US6187506B1 (en) * | 1999-08-05 | 2001-02-13 | Clariant Finance (Bvi) Limited | Antireflective coating for photoresist compositions |
| KR100557606B1 (ko) * | 1999-08-31 | 2006-03-10 | 주식회사 하이닉스반도체 | 유기 난반사 방지용 중합체 |
| KR100355604B1 (ko) * | 1999-12-23 | 2002-10-12 | 주식회사 하이닉스반도체 | 난반사 방지막용 중합체와 그 제조방법 |
| US6319835B1 (en) * | 2000-02-25 | 2001-11-20 | Shipley Company, L.L.C. | Stripping method |
| US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
| KR100687850B1 (ko) * | 2000-06-30 | 2007-02-27 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
| AU2001296737A1 (en) * | 2000-10-12 | 2002-04-22 | North Carolina State University | Co2-processes photoresists, polymers, and photoactive compounds for microlithography |
| KR20030068729A (ko) * | 2002-02-16 | 2003-08-25 | 삼성전자주식회사 | 반사 방지용 광흡수막 형성 조성물 및 이를 이용한 반도체소자의 패턴 형성 방법 |
| KR100470938B1 (ko) * | 2002-05-17 | 2005-02-22 | (주)모레이 | 유기 난반사 방지막 형성용 광흡수성 고분자, 이를포함하는 조성물, 및 이를 이용한 반도체 소자 패턴의형성 방법 |
| US7323290B2 (en) * | 2002-09-30 | 2008-01-29 | Eternal Technology Corporation | Dry film photoresist |
| US7148265B2 (en) * | 2002-09-30 | 2006-12-12 | Rohm And Haas Electronic Materials Llc | Functional polymer |
| KR100494147B1 (ko) * | 2002-10-08 | 2005-06-13 | 주식회사 하이닉스반도체 | 반도체 소자의 패턴 형성 방법 |
| US7338742B2 (en) * | 2003-10-08 | 2008-03-04 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
| EP1757985A4 (en) * | 2004-03-16 | 2010-10-27 | Nissan Chemical Ind Ltd | ANTIREFLECTION FILM CONTAINING SULFUR ATOM |
| WO2006003850A1 (ja) * | 2004-07-02 | 2006-01-12 | Nissan Chemical Industries, Ltd. | ハロゲン原子を有するナフタレン環を含むリソグラフィー用下層膜形成組成物 |
| US20060057501A1 (en) * | 2004-09-15 | 2006-03-16 | Hengpeng Wu | Antireflective compositions for photoresists |
| US7691556B2 (en) * | 2004-09-15 | 2010-04-06 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
| US7399581B2 (en) * | 2005-02-24 | 2008-07-15 | International Business Machines Corporation | Photoresist topcoat for a photolithographic process |
| KR100687873B1 (ko) * | 2005-05-20 | 2007-02-27 | 주식회사 하이닉스반도체 | 유기 반사 방지막 조성물 및 이를 이용한 패턴 형성 방법 |
| US20070083995A1 (en) * | 2005-10-12 | 2007-04-19 | Purdy William J | Fluidized positioning and protection system |
| US7553905B2 (en) * | 2005-10-31 | 2009-06-30 | Az Electronic Materials Usa Corp. | Anti-reflective coatings |
| US7662461B2 (en) | 2006-03-31 | 2010-02-16 | Milliken & Company | Synthetic leather articles and methods for producing the same |
| US7872069B2 (en) * | 2006-03-31 | 2011-01-18 | Milliken & Company | Coated substrates and polymer dispersions suitable for use in making the same |
| US8431648B2 (en) * | 2006-03-31 | 2013-04-30 | Milliken & Company | Coated substrates and polymer dispersions suitable for use in making the same |
| US7904236B2 (en) * | 2006-12-28 | 2011-03-08 | Fujitsu Ten Limited | Electronic apparatus and electronic system |
| US20080161950A1 (en) * | 2006-12-28 | 2008-07-03 | Fujitsu Ten Limited | Electronic system, electronic apparatus and method of operating audio unit |
| US7774104B2 (en) * | 2006-12-27 | 2010-08-10 | Fujitsu Ten Limited | Electronic apparatus and electronic system |
| US20080162044A1 (en) * | 2006-12-28 | 2008-07-03 | Fujitsu Ten Limited | In-vehicle electronic apparatus and in-vehicle electronic system |
| US20080157999A1 (en) * | 2006-12-28 | 2008-07-03 | Fujitsu Ten Limited | Electronic apparatus, electronic system and method of controlling audio output |
| US7860643B2 (en) * | 2006-12-28 | 2010-12-28 | Fujitsu Ten Limited | In-vehicle detachably electronic apparatus and in-vehicle electronic system |
| US7684200B2 (en) * | 2006-12-28 | 2010-03-23 | Fujitsu Ten Limited | Electronic apparatus and electronic system |
| US8706396B2 (en) * | 2006-12-28 | 2014-04-22 | Fujitsu Ten Limited | Electronic apparatus and electronic system |
| JP4842785B2 (ja) * | 2006-12-04 | 2011-12-21 | 富士通テン株式会社 | 車載用電子システム及び車載電子装置 |
| US20080159557A1 (en) * | 2006-12-27 | 2008-07-03 | Fujitsu Ten Limited | Electronic apparatus, electronic system and method of controlling sound output |
| US7765046B2 (en) * | 2006-12-28 | 2010-07-27 | Fujitsu Ten Limited | In-vehicle electronic apparatus and in-vehicle electronic system |
| US7869196B2 (en) * | 2006-12-28 | 2011-01-11 | Fujitsu Ten Limited | Electronic apparatus |
| US20090042133A1 (en) * | 2007-08-10 | 2009-02-12 | Zhong Xiang | Antireflective Coating Composition |
| US8141667B2 (en) * | 2008-06-17 | 2012-03-27 | The Board Of Trustees Of The University Of Alabama For And On Behalf Of Its Component Institution, The University Of Alabama | Hybrid dinghy pusher |
| WO2010021030A1 (ja) * | 2008-08-20 | 2010-02-25 | 富士通株式会社 | レジスト増感膜形成用材料、半導体装置の製造方法、半導体装置、及び磁気ヘッド |
| JP2014074730A (ja) * | 2011-02-04 | 2014-04-24 | Nissan Chem Ind Ltd | 非感光性レジスト下層膜形成組成物 |
| US8623589B2 (en) | 2011-06-06 | 2014-01-07 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions and processes thereof |
| KR101466147B1 (ko) | 2011-12-05 | 2014-11-27 | 제일모직 주식회사 | 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터 |
| KR101618689B1 (ko) | 2012-12-24 | 2016-05-09 | 제일모직 주식회사 | 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터 |
| DE102019134535B4 (de) * | 2019-08-05 | 2023-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Materialien für unteren antireflexbelag |
| CN116102939B (zh) * | 2021-11-09 | 2023-10-03 | 上海新阳半导体材料股份有限公司 | 一种深紫外光刻用底部抗反射涂层及其制备方法和应用 |
| CN116102937B (zh) * | 2021-11-09 | 2023-10-20 | 上海新阳半导体材料股份有限公司 | 一种底部抗反射涂层及其制备方法和应用 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5851515A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | レジスト膜の露光方法 |
| DE3211400A1 (de) * | 1982-03-27 | 1983-09-29 | Basf Ag, 6700 Ludwigshafen | Polymere mit mesogenen gruppen und farbstoffresten in den seitenketten |
| US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| US4617252A (en) * | 1983-07-01 | 1986-10-14 | Philip A. Hunt Chemical Corporation | Antireflective coatings for use in the manufacture of semi-conductor devices, methods and solutions for making such coatings, and the method for using such coatings to absorb light in ultraviolet photolithography processes |
| US5207952A (en) * | 1986-10-10 | 1993-05-04 | University Of Southern Mississippi | Side chain liquid crystalline polymers as nonlinear optical materials |
| JPS63202915A (ja) * | 1987-02-19 | 1988-08-22 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| DE3817012A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
| EP0440374B1 (en) * | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| FR2668158B1 (fr) * | 1990-10-22 | 1994-05-06 | Thomson Csf | Polymere reticulable pour applications en optique non lineaire. |
| JP2643056B2 (ja) * | 1991-06-28 | 1997-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 表面反射防止コーティング形成組成物及びその使用 |
| US5472827A (en) * | 1991-12-30 | 1995-12-05 | Sony Corporation | Method of forming a resist pattern using an anti-reflective layer |
| JP2791525B2 (ja) * | 1992-04-16 | 1998-08-27 | 三菱電機株式会社 | 反射防止膜の選定方法およびその方法により選定された反射防止膜 |
| US5294680A (en) * | 1992-07-24 | 1994-03-15 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
| DE4232394A1 (de) * | 1992-09-26 | 1994-03-31 | Basf Ag | Copolymerisate mit nichtlinear optischen Eigenschaften und deren Verwendung |
| FR2709755B1 (fr) * | 1993-09-06 | 1995-11-17 | France Telecom | Matériau polymère réticulable, utilisable en optique non linéaire, et son procédé d'obtention. |
| CN1041243C (zh) * | 1993-10-12 | 1998-12-16 | 科莱恩金融(Bvi)有限公司 | 用于光刻胶的防反射涂料组合物及在基片上制作图象的方法 |
| JP3334304B2 (ja) * | 1993-11-30 | 2002-10-15 | ソニー株式会社 | 半導体装置の製造方法 |
| US5731385A (en) * | 1993-12-16 | 1998-03-24 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
| JPH07333855A (ja) * | 1994-06-10 | 1995-12-22 | Mitsubishi Chem Corp | 反射防止塗布組成物及びパターン形成方法 |
| JP3248353B2 (ja) * | 1994-06-29 | 2002-01-21 | ソニー株式会社 | 反射防止膜の設計方法 |
| US5525457A (en) * | 1994-12-09 | 1996-06-11 | Japan Synthetic Rubber Co., Ltd. | Reflection preventing film and process for forming resist pattern using the same |
| DE69703283T2 (de) * | 1996-03-07 | 2001-05-17 | Clariant Finance (Bvi) Ltd., Tortola | Licht-absorbierende antireflektionsschichten mit verbesserter leistung durch brechungsindex-optimierung |
| US6042992A (en) * | 1996-03-07 | 2000-03-28 | Clariant Finance (Bvi) Limited | Bottom antireflective coatings through refractive index modification by anomalous dispersion |
| US5652317A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Antireflective coatings for photoresist compositions |
| US5652297A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Aqueous antireflective coatings for photoresist compositions |
-
1996
- 1996-09-30 US US08/724,109 patent/US5733714A/en not_active Expired - Lifetime
-
1997
- 1997-09-26 CN CN97198410A patent/CN1111760C/zh not_active Expired - Lifetime
- 1997-09-26 JP JP51621098A patent/JP3835823B2/ja not_active Expired - Fee Related
- 1997-09-26 EP EP97944895A patent/EP0929844B1/en not_active Expired - Lifetime
- 1997-09-26 WO PCT/EP1997/005281 patent/WO1998014834A1/en not_active Ceased
- 1997-09-26 KR KR10-1999-7002592A patent/KR100484046B1/ko not_active Expired - Fee Related
- 1997-09-26 DE DE69709140T patent/DE69709140T2/de not_active Expired - Lifetime
- 1997-09-30 TW TW086114234A patent/TW419618B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US5733714A (en) | 1998-03-31 |
| CN1232552A (zh) | 1999-10-20 |
| KR100484046B1 (ko) | 2005-04-20 |
| DE69709140D1 (de) | 2002-01-24 |
| TW419618B (en) | 2001-01-21 |
| WO1998014834A1 (en) | 1998-04-09 |
| CN1111760C (zh) | 2003-06-18 |
| KR20000048649A (ko) | 2000-07-25 |
| EP0929844A1 (en) | 1999-07-21 |
| DE69709140T2 (de) | 2002-07-11 |
| EP0929844B1 (en) | 2001-12-12 |
| JP2001502439A (ja) | 2001-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3835823B2 (ja) | フォトレジスト組成物のための反射防止膜 | |
| EP0919013B1 (en) | Antireflective coatings for photoresist compositions | |
| JP3220698B2 (ja) | 光吸収性ポリマー | |
| JP3231794B2 (ja) | フォトレジスト組成物用の反射防止膜用組成物及びそれの使用法 | |
| JP4714394B2 (ja) | フォトレジスト組成物用の反射防止膜 | |
| JP3846809B2 (ja) | アリールヒドラゾ染料を含有する底部反射防止膜 | |
| CN1221497A (zh) | 氨基彩色发色团的金属离子含量的降低及其用于合成光致抗蚀剂的低金属含量抗反射底涂层 | |
| KR20090067259A (ko) | 고리형 무수물기를 포함하는 고분자 중합체, 및 이를포함하는 유기반사방지막 조성물 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040723 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040723 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20050525 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060718 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060725 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090804 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100804 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110804 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110804 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120804 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130804 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130804 Year of fee payment: 7 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130804 Year of fee payment: 7 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |