DE69703283T2 - Licht-absorbierende antireflektionsschichten mit verbesserter leistung durch brechungsindex-optimierung - Google Patents

Licht-absorbierende antireflektionsschichten mit verbesserter leistung durch brechungsindex-optimierung

Info

Publication number
DE69703283T2
DE69703283T2 DE69703283T DE69703283T DE69703283T2 DE 69703283 T2 DE69703283 T2 DE 69703283T2 DE 69703283 T DE69703283 T DE 69703283T DE 69703283 T DE69703283 T DE 69703283T DE 69703283 T2 DE69703283 T2 DE 69703283T2
Authority
DE
Germany
Prior art keywords
light
improved performance
reflection layers
absorbing anti
index optimization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69703283T
Other languages
English (en)
Other versions
DE69703283D1 (de
Inventor
R Dammel
A Norwood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Publication of DE69703283D1 publication Critical patent/DE69703283D1/de
Application granted granted Critical
Publication of DE69703283T2 publication Critical patent/DE69703283T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
DE69703283T 1996-03-07 1997-03-06 Licht-absorbierende antireflektionsschichten mit verbesserter leistung durch brechungsindex-optimierung Expired - Lifetime DE69703283T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1300796P 1996-03-07 1996-03-07
PCT/US1997/003754 WO1997033200A1 (en) 1996-03-07 1997-03-06 Light-absorbing antireflective layers with improved performance due to refractive index optimization

Publications (2)

Publication Number Publication Date
DE69703283D1 DE69703283D1 (de) 2000-11-16
DE69703283T2 true DE69703283T2 (de) 2001-05-17

Family

ID=21757832

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69703283T Expired - Lifetime DE69703283T2 (de) 1996-03-07 1997-03-06 Licht-absorbierende antireflektionsschichten mit verbesserter leistung durch brechungsindex-optimierung

Country Status (7)

Country Link
EP (1) EP0885406B1 (de)
JP (2) JP2000506287A (de)
KR (1) KR100458685B1 (de)
CN (1) CN1091264C (de)
DE (1) DE69703283T2 (de)
TW (1) TW357395B (de)
WO (1) WO1997033200A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69706288T2 (de) * 1996-03-07 2002-05-16 Clariant Finance Bvi Ltd Antireflexions-unterbeschichtungen durch brechungsindexmodifikation mit anomaler dispersion
US5733714A (en) * 1996-09-30 1998-03-31 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
US5981145A (en) * 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers
US5994430A (en) * 1997-04-30 1999-11-30 Clariant Finance Bvi) Limited Antireflective coating compositions for photoresist compositions and use thereof
US20030054117A1 (en) * 2001-02-02 2003-03-20 Brewer Science, Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
FR2894346B1 (fr) * 2005-12-02 2012-03-30 Commissariat Energie Atomique Masque de photolithographie en extreme ultra-violet, a cavites absorbantes
JP2015172606A (ja) * 2012-07-25 2015-10-01 日産化学工業株式会社 リソグラフィー用レジスト上層膜形成組成物及びそれを用いた半導体装置の製造方法
FR3012132B1 (fr) * 2013-10-18 2016-08-05 Centre Nat Rech Scient Procede de fabrication de supports amplificateurs de contraste
CN103941548A (zh) * 2014-04-28 2014-07-23 吴钟达 具有吸光层的感光层结构与使用感光层结构的光刻工艺

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110725A (ja) * 1986-10-29 1988-05-16 Nec Corp 半導体装置の製造方法
JP2897569B2 (ja) * 1991-12-30 1999-05-31 ソニー株式会社 レジストパターン形成時に用いる反射防止膜の条件決定方法と、レジストパターン形成方法
JP2829555B2 (ja) * 1992-08-20 1998-11-25 三菱電機株式会社 微細レジストパターンの形成方法
JP3334304B2 (ja) * 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
JP3248353B2 (ja) * 1994-06-29 2002-01-21 ソニー株式会社 反射防止膜の設計方法

Also Published As

Publication number Publication date
KR19990087480A (ko) 1999-12-27
CN1212767A (zh) 1999-03-31
EP0885406B1 (de) 2000-10-11
KR100458685B1 (ko) 2005-06-02
JP5097960B2 (ja) 2012-12-12
DE69703283D1 (de) 2000-11-16
CN1091264C (zh) 2002-09-18
JP2000506287A (ja) 2000-05-23
EP0885406A1 (de) 1998-12-23
WO1997033200A1 (en) 1997-09-12
JP2010107996A (ja) 2010-05-13
TW357395B (en) 1999-05-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU