DE69709140D1 - Antireflexbeschichtung für photoresistzusammensetzungen - Google Patents
Antireflexbeschichtung für photoresistzusammensetzungenInfo
- Publication number
- DE69709140D1 DE69709140D1 DE69709140T DE69709140T DE69709140D1 DE 69709140 D1 DE69709140 D1 DE 69709140D1 DE 69709140 T DE69709140 T DE 69709140T DE 69709140 T DE69709140 T DE 69709140T DE 69709140 D1 DE69709140 D1 DE 69709140D1
- Authority
- DE
- Germany
- Prior art keywords
- photoresist compositions
- antireflex coating
- antireflex
- coating
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
- G03C1/825—Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
- G03C1/835—Macromolecular substances therefor, e.g. mordants
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/151—Matting or other surface reflectivity altering material
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/724,109 US5733714A (en) | 1996-09-30 | 1996-09-30 | Antireflective coating for photoresist compositions |
PCT/EP1997/005281 WO1998014834A1 (en) | 1996-09-30 | 1997-09-26 | Antireflective coating for photoresist compositions |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69709140D1 true DE69709140D1 (de) | 2002-01-24 |
DE69709140T2 DE69709140T2 (de) | 2002-07-11 |
Family
ID=24909045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69709140T Expired - Lifetime DE69709140T2 (de) | 1996-09-30 | 1997-09-26 | Antireflexbeschichtung für photoresistzusammensetzungen |
Country Status (8)
Country | Link |
---|---|
US (1) | US5733714A (de) |
EP (1) | EP0929844B1 (de) |
JP (1) | JP3835823B2 (de) |
KR (1) | KR100484046B1 (de) |
CN (1) | CN1111760C (de) |
DE (1) | DE69709140T2 (de) |
TW (1) | TW419618B (de) |
WO (1) | WO1998014834A1 (de) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW406215B (en) * | 1996-08-07 | 2000-09-21 | Fuji Photo Film Co Ltd | Composition for anti-reflective coating material in lithographic process, and process for forming resist pattern |
JPH1165125A (ja) * | 1997-08-21 | 1999-03-05 | Tokyo Ohka Kogyo Co Ltd | パターン形成方法 |
US5962195A (en) * | 1997-09-10 | 1999-10-05 | Vanguard International Semiconductor Corporation | Method for controlling linewidth by etching bottom anti-reflective coating |
US5919599A (en) * | 1997-09-30 | 1999-07-06 | Brewer Science, Inc. | Thermosetting anti-reflective coatings at deep ultraviolet |
JP4053631B2 (ja) * | 1997-10-08 | 2008-02-27 | Azエレクトロニックマテリアルズ株式会社 | 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体 |
US5935760A (en) * | 1997-10-20 | 1999-08-10 | Brewer Science Inc. | Thermosetting polyester anti-reflective coatings for multilayer photoresist processes |
US6051369A (en) * | 1998-01-08 | 2000-04-18 | Kabushiki Kaisha Toshiba | Lithography process using one or more anti-reflective coating films and fabrication process using the lithography process |
TW457403B (en) * | 1998-07-03 | 2001-10-01 | Clariant Int Ltd | Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom |
JP3852889B2 (ja) * | 1998-09-24 | 2006-12-06 | 富士写真フイルム株式会社 | フォトレジスト用反射防止膜材料組成物 |
US6048662A (en) * | 1998-12-15 | 2000-04-11 | Bruhnke; John D. | Antireflective coatings comprising poly(oxyalkylene) colorants |
US6251562B1 (en) | 1998-12-23 | 2001-06-26 | International Business Machines Corporation | Antireflective polymer and method of use |
US6569595B1 (en) * | 1999-02-25 | 2003-05-27 | Kabushiki Kaisha Toshiba | Method of forming a pattern |
US6316165B1 (en) * | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
US6187506B1 (en) * | 1999-08-05 | 2001-02-13 | Clariant Finance (Bvi) Limited | Antireflective coating for photoresist compositions |
KR100557606B1 (ko) * | 1999-08-31 | 2006-03-10 | 주식회사 하이닉스반도체 | 유기 난반사 방지용 중합체 |
KR100355604B1 (ko) * | 1999-12-23 | 2002-10-12 | 주식회사 하이닉스반도체 | 난반사 방지막용 중합체와 그 제조방법 |
US6319835B1 (en) * | 2000-02-25 | 2001-11-20 | Shipley Company, L.L.C. | Stripping method |
US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
KR100687850B1 (ko) * | 2000-06-30 | 2007-02-27 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
AU2001296737A1 (en) * | 2000-10-12 | 2002-04-22 | North Carolina State University | Co2-processes photoresists, polymers, and photoactive compounds for microlithography |
KR20030068729A (ko) * | 2002-02-16 | 2003-08-25 | 삼성전자주식회사 | 반사 방지용 광흡수막 형성 조성물 및 이를 이용한 반도체소자의 패턴 형성 방법 |
KR100470938B1 (ko) * | 2002-05-17 | 2005-02-22 | (주)모레이 | 유기 난반사 방지막 형성용 광흡수성 고분자, 이를포함하는 조성물, 및 이를 이용한 반도체 소자 패턴의형성 방법 |
US7148265B2 (en) * | 2002-09-30 | 2006-12-12 | Rohm And Haas Electronic Materials Llc | Functional polymer |
US7323290B2 (en) * | 2002-09-30 | 2008-01-29 | Eternal Technology Corporation | Dry film photoresist |
KR100494147B1 (ko) * | 2002-10-08 | 2005-06-13 | 주식회사 하이닉스반도체 | 반도체 소자의 패턴 형성 방법 |
US7338742B2 (en) * | 2003-10-08 | 2008-03-04 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
KR101163113B1 (ko) * | 2004-03-16 | 2012-07-09 | 닛산 가가쿠 고교 가부시키 가이샤 | 유황 원자를 함유하는 반사 방지막 |
EP1780600B1 (de) * | 2004-07-02 | 2014-02-26 | Nissan Chemical Industries, Ltd. | Unterschicht-filmbildungszusammensetzung für die lithographie mit einem naphthalinring mit halogenatom |
US7691556B2 (en) * | 2004-09-15 | 2010-04-06 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
US20060057501A1 (en) * | 2004-09-15 | 2006-03-16 | Hengpeng Wu | Antireflective compositions for photoresists |
US7399581B2 (en) * | 2005-02-24 | 2008-07-15 | International Business Machines Corporation | Photoresist topcoat for a photolithographic process |
KR100687873B1 (ko) * | 2005-05-20 | 2007-02-27 | 주식회사 하이닉스반도체 | 유기 반사 방지막 조성물 및 이를 이용한 패턴 형성 방법 |
WO2007047379A2 (en) * | 2005-10-12 | 2007-04-26 | Sundance Enterprises | Fluidized positioning and protection system |
US7553905B2 (en) * | 2005-10-31 | 2009-06-30 | Az Electronic Materials Usa Corp. | Anti-reflective coatings |
US7662461B2 (en) | 2006-03-31 | 2010-02-16 | Milliken & Company | Synthetic leather articles and methods for producing the same |
US8431648B2 (en) * | 2006-03-31 | 2013-04-30 | Milliken & Company | Coated substrates and polymer dispersions suitable for use in making the same |
US7872069B2 (en) * | 2006-03-31 | 2011-01-18 | Milliken & Company | Coated substrates and polymer dispersions suitable for use in making the same |
US8706396B2 (en) * | 2006-12-28 | 2014-04-22 | Fujitsu Ten Limited | Electronic apparatus and electronic system |
US7860643B2 (en) * | 2006-12-28 | 2010-12-28 | Fujitsu Ten Limited | In-vehicle detachably electronic apparatus and in-vehicle electronic system |
US20080161950A1 (en) * | 2006-12-28 | 2008-07-03 | Fujitsu Ten Limited | Electronic system, electronic apparatus and method of operating audio unit |
US20080157999A1 (en) * | 2006-12-28 | 2008-07-03 | Fujitsu Ten Limited | Electronic apparatus, electronic system and method of controlling audio output |
US7774104B2 (en) * | 2006-12-27 | 2010-08-10 | Fujitsu Ten Limited | Electronic apparatus and electronic system |
US20080159557A1 (en) * | 2006-12-27 | 2008-07-03 | Fujitsu Ten Limited | Electronic apparatus, electronic system and method of controlling sound output |
US20080162044A1 (en) * | 2006-12-28 | 2008-07-03 | Fujitsu Ten Limited | In-vehicle electronic apparatus and in-vehicle electronic system |
JP4842785B2 (ja) * | 2006-12-04 | 2011-12-21 | 富士通テン株式会社 | 車載用電子システム及び車載電子装置 |
US7684200B2 (en) * | 2006-12-28 | 2010-03-23 | Fujitsu Ten Limited | Electronic apparatus and electronic system |
US7904236B2 (en) * | 2006-12-28 | 2011-03-08 | Fujitsu Ten Limited | Electronic apparatus and electronic system |
US7765046B2 (en) * | 2006-12-28 | 2010-07-27 | Fujitsu Ten Limited | In-vehicle electronic apparatus and in-vehicle electronic system |
US7869196B2 (en) * | 2006-12-28 | 2011-01-11 | Fujitsu Ten Limited | Electronic apparatus |
US20090042133A1 (en) * | 2007-08-10 | 2009-02-12 | Zhong Xiang | Antireflective Coating Composition |
US8141667B2 (en) * | 2008-06-17 | 2012-03-27 | The Board Of Trustees Of The University Of Alabama For And On Behalf Of Its Component Institution, The University Of Alabama | Hybrid dinghy pusher |
WO2010021030A1 (ja) * | 2008-08-20 | 2010-02-25 | 富士通株式会社 | レジスト増感膜形成用材料、半導体装置の製造方法、半導体装置、及び磁気ヘッド |
JP2014074730A (ja) * | 2011-02-04 | 2014-04-24 | Nissan Chem Ind Ltd | 非感光性レジスト下層膜形成組成物 |
US8623589B2 (en) | 2011-06-06 | 2014-01-07 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions and processes thereof |
KR101466147B1 (ko) * | 2011-12-05 | 2014-11-27 | 제일모직 주식회사 | 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터 |
KR101618689B1 (ko) | 2012-12-24 | 2016-05-09 | 제일모직 주식회사 | 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터 |
DE102019134535B4 (de) * | 2019-08-05 | 2023-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Materialien für unteren antireflexbelag |
CN116102937B (zh) * | 2021-11-09 | 2023-10-20 | 上海新阳半导体材料股份有限公司 | 一种底部抗反射涂层及其制备方法和应用 |
CN116102939B (zh) * | 2021-11-09 | 2023-10-03 | 上海新阳半导体材料股份有限公司 | 一种深紫外光刻用底部抗反射涂层及其制备方法和应用 |
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JPS5851515A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | レジスト膜の露光方法 |
DE3211400A1 (de) * | 1982-03-27 | 1983-09-29 | Basf Ag, 6700 Ludwigshafen | Polymere mit mesogenen gruppen und farbstoffresten in den seitenketten |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
US4617252A (en) * | 1983-07-01 | 1986-10-14 | Philip A. Hunt Chemical Corporation | Antireflective coatings for use in the manufacture of semi-conductor devices, methods and solutions for making such coatings, and the method for using such coatings to absorb light in ultraviolet photolithography processes |
US5207952A (en) * | 1986-10-10 | 1993-05-04 | University Of Southern Mississippi | Side chain liquid crystalline polymers as nonlinear optical materials |
JPS63202915A (ja) * | 1987-02-19 | 1988-08-22 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
DE3817012A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
EP0440374B1 (de) * | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemisch verstärktes Photolack-Material |
FR2668158B1 (fr) * | 1990-10-22 | 1994-05-06 | Thomson Csf | Polymere reticulable pour applications en optique non lineaire. |
JP2643056B2 (ja) * | 1991-06-28 | 1997-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 表面反射防止コーティング形成組成物及びその使用 |
US5472827A (en) * | 1991-12-30 | 1995-12-05 | Sony Corporation | Method of forming a resist pattern using an anti-reflective layer |
JP2791525B2 (ja) * | 1992-04-16 | 1998-08-27 | 三菱電機株式会社 | 反射防止膜の選定方法およびその方法により選定された反射防止膜 |
US5294680A (en) * | 1992-07-24 | 1994-03-15 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
DE4232394A1 (de) * | 1992-09-26 | 1994-03-31 | Basf Ag | Copolymerisate mit nichtlinear optischen Eigenschaften und deren Verwendung |
FR2709755B1 (fr) * | 1993-09-06 | 1995-11-17 | France Telecom | Matériau polymère réticulable, utilisable en optique non linéaire, et son procédé d'obtention. |
JP3492375B2 (ja) * | 1993-10-12 | 2004-02-03 | エイチ・エヌ・エイ・ホールディングス・インコーポレイテッド | 改良されたフォトレジスト用水溶性反射防止塗料組成物およびその製造法 |
JP3334304B2 (ja) * | 1993-11-30 | 2002-10-15 | ソニー株式会社 | 半導体装置の製造方法 |
US5731385A (en) * | 1993-12-16 | 1998-03-24 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
JPH07333855A (ja) * | 1994-06-10 | 1995-12-22 | Mitsubishi Chem Corp | 反射防止塗布組成物及びパターン形成方法 |
JP3248353B2 (ja) * | 1994-06-29 | 2002-01-21 | ソニー株式会社 | 反射防止膜の設計方法 |
US5525457A (en) * | 1994-12-09 | 1996-06-11 | Japan Synthetic Rubber Co., Ltd. | Reflection preventing film and process for forming resist pattern using the same |
WO1997033200A1 (en) * | 1996-03-07 | 1997-09-12 | Clariant International, Ltd. | Light-absorbing antireflective layers with improved performance due to refractive index optimization |
TW394850B (en) * | 1996-03-07 | 2000-06-21 | Clariant Finance Bvi Ltd | Bottom antireflective coatings through refractive index modification by anomalous dispersion |
US5652297A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Aqueous antireflective coatings for photoresist compositions |
US5652317A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Antireflective coatings for photoresist compositions |
-
1996
- 1996-09-30 US US08/724,109 patent/US5733714A/en not_active Expired - Lifetime
-
1997
- 1997-09-26 DE DE69709140T patent/DE69709140T2/de not_active Expired - Lifetime
- 1997-09-26 CN CN97198410A patent/CN1111760C/zh not_active Expired - Lifetime
- 1997-09-26 EP EP97944895A patent/EP0929844B1/de not_active Expired - Lifetime
- 1997-09-26 KR KR10-1999-7002592A patent/KR100484046B1/ko not_active IP Right Cessation
- 1997-09-26 JP JP51621098A patent/JP3835823B2/ja not_active Expired - Fee Related
- 1997-09-26 WO PCT/EP1997/005281 patent/WO1998014834A1/en active IP Right Grant
- 1997-09-30 TW TW086114234A patent/TW419618B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW419618B (en) | 2001-01-21 |
US5733714A (en) | 1998-03-31 |
JP2001502439A (ja) | 2001-02-20 |
KR100484046B1 (ko) | 2005-04-20 |
EP0929844B1 (de) | 2001-12-12 |
EP0929844A1 (de) | 1999-07-21 |
WO1998014834A1 (en) | 1998-04-09 |
KR20000048649A (ko) | 2000-07-25 |
JP3835823B2 (ja) | 2006-10-18 |
CN1111760C (zh) | 2003-06-18 |
CN1232552A (zh) | 1999-10-20 |
DE69709140T2 (de) | 2002-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU |