CN1159627C - 用于光刻胶组合物的抗反射涂料组合物及光刻胶成像方法 - Google Patents
用于光刻胶组合物的抗反射涂料组合物及光刻胶成像方法 Download PDFInfo
- Publication number
- CN1159627C CN1159627C CNB988045893A CN98804589A CN1159627C CN 1159627 C CN1159627 C CN 1159627C CN B988045893 A CNB988045893 A CN B988045893A CN 98804589 A CN98804589 A CN 98804589A CN 1159627 C CN1159627 C CN 1159627C
- Authority
- CN
- China
- Prior art keywords
- composition
- photoresist
- alkyl
- acid
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B69/00—Dyes not provided for by a single group of this subclass
- C09B69/10—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds
- C09B69/106—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds containing an azo dye
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/30—Introducing nitrogen atoms or nitrogen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
- C08L81/06—Polysulfones; Polyethersulfones
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/006—Anti-reflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
- G03C1/825—Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
- G03C1/835—Macromolecular substances therefor, e.g. mordants
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- General Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Paints Or Removers (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
实施例 | DTP(mJ/cm2) | 分辨率 | 驻波 |
实施例13 | 170 | 0.32μm | 无 |
实施例14 | 152 | 0.30μm | 无 |
无A.R.C. | 195 | 0.38μm | 严重 |
A.R.C.聚合物 | %振幅降低 |
无A.R.C. | 0 |
实施例13 | 88.87 |
实施例14 | 90.26 |
实施例 | 振幅比 | %振幅降低 |
AZ7805 | 29.02% | 0 |
实施例17的A.R.C.和AZ7805 | 11.11% | 61.7% |
Claims (25)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/841,750 | 1997-04-30 | ||
US08/841,750 US5994430A (en) | 1997-04-30 | 1997-04-30 | Antireflective coating compositions for photoresist compositions and use thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1253639A CN1253639A (zh) | 2000-05-17 |
CN1159627C true CN1159627C (zh) | 2004-07-28 |
Family
ID=25285612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB988045893A Expired - Lifetime CN1159627C (zh) | 1997-04-30 | 1998-04-21 | 用于光刻胶组合物的抗反射涂料组合物及光刻胶成像方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5994430A (zh) |
EP (1) | EP0978016B1 (zh) |
JP (1) | JP3231794B2 (zh) |
KR (1) | KR100567639B1 (zh) |
CN (1) | CN1159627C (zh) |
DE (1) | DE69840910D1 (zh) |
TW (1) | TW530193B (zh) |
WO (1) | WO1998049603A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100468393C (zh) * | 1999-04-01 | 2009-03-11 | Oce印刷系统有限公司 | 用于处理及印刷信息的装置及方法 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6808869B1 (en) * | 1996-12-24 | 2004-10-26 | Fuji Photo Film Co., Ltd. | Bottom anti-reflective coating material composition and method for forming resist pattern using the same |
US7361444B1 (en) * | 1998-02-23 | 2008-04-22 | International Business Machines Corporation | Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof |
US6251562B1 (en) * | 1998-12-23 | 2001-06-26 | International Business Machines Corporation | Antireflective polymer and method of use |
US6187506B1 (en) * | 1999-08-05 | 2001-02-13 | Clariant Finance (Bvi) Limited | Antireflective coating for photoresist compositions |
US6346361B1 (en) * | 1999-10-06 | 2002-02-12 | Clariant Finance (Bvi) Limited | Method for synthesizing polymeric AZO dyes |
US6686124B1 (en) * | 2000-03-14 | 2004-02-03 | International Business Machines Corporation | Multifunctional polymeric materials and use thereof |
JP3445584B2 (ja) * | 2001-08-10 | 2003-09-08 | 沖電気工業株式会社 | 反射防止膜のエッチング方法 |
US20060060096A1 (en) * | 2002-10-15 | 2006-03-23 | Agfa-Gevaert | Polymer for heat-sensitive lithographic printing plate precursor |
US7238462B2 (en) * | 2002-11-27 | 2007-07-03 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating material for wiring, embedded material, and wiring formation method |
US7029821B2 (en) * | 2003-02-11 | 2006-04-18 | Rohm And Haas Electronic Materials Llc | Photoresist and organic antireflective coating compositions |
CN100440431C (zh) * | 2003-03-04 | 2008-12-03 | 东京応化工业株式会社 | 液浸曝光工艺用浸渍液及使用该浸渍液的抗蚀剂图案形成方法 |
TWI352261B (en) * | 2003-04-17 | 2011-11-11 | Nissan Chemical Ind Ltd | Porous sublayer coating and sublayer coating-formi |
TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
KR100586541B1 (ko) * | 2003-07-16 | 2006-06-07 | 주식회사 하이닉스반도체 | 유기 반사 방지막 조성물 및 이를 이용한 패턴 형성 방법 |
KR100570206B1 (ko) * | 2003-10-15 | 2006-04-12 | 주식회사 하이닉스반도체 | 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물 |
US7534555B2 (en) * | 2003-12-10 | 2009-05-19 | Hitachi Global Storage Technologies Netherlands B.V. | Plating using copolymer |
CN101080674B (zh) * | 2004-12-03 | 2013-09-18 | 捷时雅株式会社 | 形成抗反射薄膜的组合物,层状产品,和抗蚀剂图案的形成方法 |
US20060177772A1 (en) * | 2005-02-10 | 2006-08-10 | Abdallah David J | Process of imaging a photoresist with multiple antireflective coatings |
US7935771B2 (en) * | 2005-11-11 | 2011-05-03 | Canon Kabushiki Kaisha | Polymer having sulfonic acid group or sulfonic acid ester group and amide group, and toner for developing electrostatic latent image having the polymer |
US7968650B2 (en) | 2006-10-31 | 2011-06-28 | Johnson & Johnson Vision Care, Inc. | Polymeric compositions comprising at least one volume excluding polymer |
JP6157160B2 (ja) * | 2013-03-15 | 2017-07-05 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 上層膜形成用組成物およびそれを用いたレジストパターン形成方法 |
US9541829B2 (en) * | 2013-07-24 | 2017-01-10 | Orthogonal, Inc. | Cross-linkable fluorinated photopolymer |
WO2015120025A1 (en) | 2014-02-07 | 2015-08-13 | Orthogonal, Inc. | Cross-linkable fluorinated photopolymer |
CN114686057B (zh) * | 2020-12-28 | 2023-06-02 | 中国科学院微电子研究所 | 一种图形化用抗反射涂层组合物及图形化方法 |
US20220406593A1 (en) * | 2021-05-27 | 2022-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Coating composition for photolithography |
CN117820910A (zh) * | 2022-06-30 | 2024-04-05 | 华为技术有限公司 | 涂层材料和集成电路及制备方法、电子设备 |
Family Cites Families (24)
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US3625919A (en) * | 1967-02-10 | 1971-12-07 | Hiroyoshi Kamogawa | Process for the preparation of diazotized vinylphenol polymers having phototropic properties |
US3709724A (en) * | 1969-09-18 | 1973-01-09 | Basf Ag | Process for finishing leather and synthetic leather substitutes |
JPS5851515A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | レジスト膜の露光方法 |
DE3211400A1 (de) * | 1982-03-27 | 1983-09-29 | Basf Ag, 6700 Ludwigshafen | Polymere mit mesogenen gruppen und farbstoffresten in den seitenketten |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
GB8401166D0 (en) * | 1984-01-17 | 1984-02-22 | Bevaloid Ltd | Labelled polymer compositions |
US5207952A (en) * | 1986-10-10 | 1993-05-04 | University Of Southern Mississippi | Side chain liquid crystalline polymers as nonlinear optical materials |
JPS63202915A (ja) * | 1987-02-19 | 1988-08-22 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
DE3817012A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern |
JP2640137B2 (ja) * | 1989-02-28 | 1997-08-13 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
FR2668158B1 (fr) * | 1990-10-22 | 1994-05-06 | Thomson Csf | Polymere reticulable pour applications en optique non lineaire. |
JP2643056B2 (ja) * | 1991-06-28 | 1997-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 表面反射防止コーティング形成組成物及びその使用 |
US5472827A (en) * | 1991-12-30 | 1995-12-05 | Sony Corporation | Method of forming a resist pattern using an anti-reflective layer |
US5294680A (en) * | 1992-07-24 | 1994-03-15 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
DE4232394A1 (de) * | 1992-09-26 | 1994-03-31 | Basf Ag | Copolymerisate mit nichtlinear optischen Eigenschaften und deren Verwendung |
FR2709755B1 (fr) * | 1993-09-06 | 1995-11-17 | France Telecom | Matériau polymère réticulable, utilisable en optique non linéaire, et son procédé d'obtention. |
SG52630A1 (en) * | 1993-10-12 | 1998-09-28 | Hoechst Ag | Top anti-reflective coating films |
JP3334304B2 (ja) * | 1993-11-30 | 2002-10-15 | ソニー株式会社 | 半導体装置の製造方法 |
JP3248353B2 (ja) * | 1994-06-29 | 2002-01-21 | ソニー株式会社 | 反射防止膜の設計方法 |
US5525457A (en) * | 1994-12-09 | 1996-06-11 | Japan Synthetic Rubber Co., Ltd. | Reflection preventing film and process for forming resist pattern using the same |
JP2000506287A (ja) * | 1996-03-07 | 2000-05-23 | クラリアント・インターナショナル・リミテッド | 屈折率を最適化して性能を改善した光吸収性の反射防止層 |
KR100500499B1 (ko) * | 1996-03-07 | 2005-12-30 | 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 | 이상분산에의한굴절율변형을통한하부반사방지코팅체 |
US5652297A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Aqueous antireflective coatings for photoresist compositions |
US5652317A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Antireflective coatings for photoresist compositions |
-
1997
- 1997-04-30 US US08/841,750 patent/US5994430A/en not_active Expired - Lifetime
-
1998
- 1998-04-21 DE DE69840910T patent/DE69840910D1/de not_active Expired - Lifetime
- 1998-04-21 JP JP54655898A patent/JP3231794B2/ja not_active Expired - Lifetime
- 1998-04-21 KR KR1019997009978A patent/KR100567639B1/ko not_active IP Right Cessation
- 1998-04-21 WO PCT/EP1998/002334 patent/WO1998049603A1/en active IP Right Grant
- 1998-04-21 CN CNB988045893A patent/CN1159627C/zh not_active Expired - Lifetime
- 1998-04-21 EP EP98922750A patent/EP0978016B1/en not_active Expired - Lifetime
- 1998-04-29 TW TW087106633A patent/TW530193B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100468393C (zh) * | 1999-04-01 | 2009-03-11 | Oce印刷系统有限公司 | 用于处理及印刷信息的装置及方法 |
Also Published As
Publication number | Publication date |
---|---|
WO1998049603A1 (en) | 1998-11-05 |
KR100567639B1 (ko) | 2006-04-05 |
EP0978016B1 (en) | 2009-06-17 |
TW530193B (en) | 2003-05-01 |
EP0978016A1 (en) | 2000-02-09 |
CN1253639A (zh) | 2000-05-17 |
DE69840910D1 (de) | 2009-07-30 |
KR20010020358A (ko) | 2001-03-15 |
JP3231794B2 (ja) | 2001-11-26 |
JP2000512402A (ja) | 2000-09-19 |
US5994430A (en) | 1999-11-30 |
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