CN110581067B - 蚀刻方法及蚀刻装置 - Google Patents
蚀刻方法及蚀刻装置 Download PDFInfo
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- CN110581067B CN110581067B CN201910471001.7A CN201910471001A CN110581067B CN 110581067 B CN110581067 B CN 110581067B CN 201910471001 A CN201910471001 A CN 201910471001A CN 110581067 B CN110581067 B CN 110581067B
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- etching
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- 238000005530 etching Methods 0.000 title claims abstract description 263
- 238000000034 method Methods 0.000 title claims abstract description 71
- 239000000463 material Substances 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000010926 purge Methods 0.000 claims description 33
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 6
- 239000007795 chemical reaction product Substances 0.000 abstract description 15
- 230000005764 inhibitory process Effects 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 233
- 235000012431 wafers Nutrition 0.000 description 57
- 238000010438 heat treatment Methods 0.000 description 23
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 19
- 230000007246 mechanism Effects 0.000 description 18
- 239000013077 target material Substances 0.000 description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 4
- 239000012686 silicon precursor Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- -1 siCN Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018110555A JP7204348B2 (ja) | 2018-06-08 | 2018-06-08 | エッチング方法およびエッチング装置 |
| JP2018-110555 | 2018-06-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110581067A CN110581067A (zh) | 2019-12-17 |
| CN110581067B true CN110581067B (zh) | 2023-11-21 |
Family
ID=68763617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910471001.7A Active CN110581067B (zh) | 2018-06-08 | 2019-05-31 | 蚀刻方法及蚀刻装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20190378724A1 (enExample) |
| JP (1) | JP7204348B2 (enExample) |
| KR (1) | KR102282188B1 (enExample) |
| CN (1) | CN110581067B (enExample) |
| TW (1) | TWI815898B (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| CN111009459B (zh) * | 2019-12-26 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 含氟残留物去除方法、刻蚀方法和氧化层清洗方法 |
| US11329140B2 (en) | 2020-01-17 | 2022-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
| WO2021202411A1 (en) * | 2020-04-01 | 2021-10-07 | Lam Research Corporation | Selective precision etching of semiconductor materials |
| KR102590870B1 (ko) * | 2020-04-10 | 2023-10-19 | 주식회사 히타치하이테크 | 에칭 방법 |
| JP7472634B2 (ja) * | 2020-04-28 | 2024-04-23 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| DE102020133643A1 (de) | 2020-05-13 | 2021-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Verfahren zur herstellung einer halbleitervorrichtung, und halbleitervorrichtung |
| US11677015B2 (en) * | 2020-05-13 | 2023-06-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device and a semiconductor device |
| JP7550534B2 (ja) * | 2020-05-15 | 2024-09-13 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| JP7535424B2 (ja) * | 2020-09-29 | 2024-08-16 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| JP7589578B2 (ja) * | 2021-02-16 | 2024-11-26 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| US11295960B1 (en) * | 2021-03-09 | 2022-04-05 | Hitachi High-Tech Corporation | Etching method |
| US20220375751A1 (en) * | 2021-05-24 | 2022-11-24 | Applied Materials, Inc. | Integrated epitaxy and preclean system |
| JP7457084B2 (ja) * | 2021-12-31 | 2024-03-27 | サムス カンパニー リミテッド | 基板処理方法及び基板処理装置 |
| KR102864347B1 (ko) | 2022-02-14 | 2025-09-24 | 주식회사 히타치하이테크 | 에칭 처리 방법 |
| KR102808277B1 (ko) * | 2022-09-26 | 2025-05-15 | 세메스 주식회사 | 반도체 소자의 형성 방법 및 반도체 소자의 형성을 위한 기판 처리 시스템 |
| JP2024062579A (ja) * | 2022-10-25 | 2024-05-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| WO2025106307A1 (en) * | 2023-11-17 | 2025-05-22 | Lam Research Corporation | Selective etch of stack using a hydrogen and fluorine containing gas and an -oh containing gas |
| US20250246437A1 (en) * | 2024-01-26 | 2025-07-31 | Tokyo Electron Limited | Selective etching in semiconductor devices |
| JP2025133516A (ja) * | 2024-03-01 | 2025-09-11 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102792425A (zh) * | 2010-03-10 | 2012-11-21 | 应用材料公司 | 循环氧化与蚀刻的设备及方法 |
| CN103109352A (zh) * | 2010-10-06 | 2013-05-15 | 应用材料公司 | 用于3d内存应用的pecvd氧化物-氮化物以及氧化物-硅堆栈 |
| TW201612976A (en) * | 2014-06-27 | 2016-04-01 | Tokyo Electron Ltd | Etching method and storage medium |
| CN105762060A (zh) * | 2015-01-05 | 2016-07-13 | 朗姆研究公司 | 氧化硅和氧化锗的各向同性原子层蚀刻 |
| CN105845562A (zh) * | 2015-02-03 | 2016-08-10 | 东京毅力科创株式会社 | 蚀刻方法 |
| CN106067418A (zh) * | 2015-04-22 | 2016-11-02 | 东京毅力科创株式会社 | 蚀刻处理方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100197670B1 (ko) * | 1996-06-27 | 1999-06-15 | 김영환 | 반도체 소자의 콘택홀 형성방법 |
| JP2000021842A (ja) * | 1998-06-29 | 2000-01-21 | Shin Etsu Handotai Co Ltd | 珪素半導体単結晶基板の処理方法 |
| US6391793B2 (en) * | 1999-08-30 | 2002-05-21 | Micron Technology, Inc. | Compositions for etching silicon with high selectivity to oxides and methods of using same |
| JP4833512B2 (ja) | 2003-06-24 | 2011-12-07 | 東京エレクトロン株式会社 | 被処理体処理装置、被処理体処理方法及び被処理体搬送方法 |
| JP2006167849A (ja) * | 2004-12-15 | 2006-06-29 | Denso Corp | マイクロ構造体の製造方法 |
| WO2008088300A2 (en) * | 2005-03-08 | 2008-07-24 | Primaxx, Inc. | Selective etching of oxides from substrates |
| JP5084250B2 (ja) | 2006-12-26 | 2012-11-28 | 東京エレクトロン株式会社 | ガス処理装置およびガス処理方法ならびに記憶媒体 |
| JP2016025195A (ja) * | 2014-07-18 | 2016-02-08 | 東京エレクトロン株式会社 | エッチング方法 |
| KR102396111B1 (ko) * | 2015-06-18 | 2022-05-10 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| US9564341B1 (en) * | 2015-08-04 | 2017-02-07 | Applied Materials, Inc. | Gas-phase silicon oxide selective etch |
| US9349605B1 (en) * | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| FR3041471B1 (fr) * | 2015-09-18 | 2018-07-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation des espaceurs d'une grille d'un transistor |
| JP6602699B2 (ja) * | 2016-03-14 | 2019-11-06 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム |
| CN107919277A (zh) * | 2016-10-08 | 2018-04-17 | 北京北方华创微电子装备有限公司 | 去除晶片上的二氧化硅的方法及制造工艺 |
-
2018
- 2018-06-08 JP JP2018110555A patent/JP7204348B2/ja active Active
-
2019
- 2019-05-31 CN CN201910471001.7A patent/CN110581067B/zh active Active
- 2019-06-04 KR KR1020190065694A patent/KR102282188B1/ko active Active
- 2019-06-04 TW TW108119287A patent/TWI815898B/zh active
- 2019-06-07 US US16/434,843 patent/US20190378724A1/en not_active Abandoned
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102792425A (zh) * | 2010-03-10 | 2012-11-21 | 应用材料公司 | 循环氧化与蚀刻的设备及方法 |
| CN103109352A (zh) * | 2010-10-06 | 2013-05-15 | 应用材料公司 | 用于3d内存应用的pecvd氧化物-氮化物以及氧化物-硅堆栈 |
| TW201612976A (en) * | 2014-06-27 | 2016-04-01 | Tokyo Electron Ltd | Etching method and storage medium |
| CN105762060A (zh) * | 2015-01-05 | 2016-07-13 | 朗姆研究公司 | 氧化硅和氧化锗的各向同性原子层蚀刻 |
| CN105845562A (zh) * | 2015-02-03 | 2016-08-10 | 东京毅力科创株式会社 | 蚀刻方法 |
| CN106067418A (zh) * | 2015-04-22 | 2016-11-02 | 东京毅力科创株式会社 | 蚀刻处理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20190378724A1 (en) | 2019-12-12 |
| KR102282188B1 (ko) | 2021-07-26 |
| JP7204348B2 (ja) | 2023-01-16 |
| CN110581067A (zh) | 2019-12-17 |
| KR20190139770A (ko) | 2019-12-18 |
| JP2019212872A (ja) | 2019-12-12 |
| TW202013479A (zh) | 2020-04-01 |
| TWI815898B (zh) | 2023-09-21 |
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