KR102282188B1 - 에칭 방법 및 에칭 장치 - Google Patents

에칭 방법 및 에칭 장치 Download PDF

Info

Publication number
KR102282188B1
KR102282188B1 KR1020190065694A KR20190065694A KR102282188B1 KR 102282188 B1 KR102282188 B1 KR 102282188B1 KR 1020190065694 A KR1020190065694 A KR 1020190065694A KR 20190065694 A KR20190065694 A KR 20190065694A KR 102282188 B1 KR102282188 B1 KR 102282188B1
Authority
KR
South Korea
Prior art keywords
gas
etching
chamber
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190065694A
Other languages
English (en)
Korean (ko)
Other versions
KR20190139770A (ko
Inventor
사토시 도다
사토루 기쿠시마
겐 나카고미
준 린
요시에 오자와
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20190139770A publication Critical patent/KR20190139770A/ko
Application granted granted Critical
Publication of KR102282188B1 publication Critical patent/KR102282188B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
KR1020190065694A 2018-06-08 2019-06-04 에칭 방법 및 에칭 장치 Active KR102282188B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-110555 2018-06-08
JP2018110555A JP7204348B2 (ja) 2018-06-08 2018-06-08 エッチング方法およびエッチング装置

Publications (2)

Publication Number Publication Date
KR20190139770A KR20190139770A (ko) 2019-12-18
KR102282188B1 true KR102282188B1 (ko) 2021-07-26

Family

ID=68763617

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190065694A Active KR102282188B1 (ko) 2018-06-08 2019-06-04 에칭 방법 및 에칭 장치

Country Status (5)

Country Link
US (1) US20190378724A1 (enExample)
JP (1) JP7204348B2 (enExample)
KR (1) KR102282188B1 (enExample)
CN (1) CN110581067B (enExample)
TW (1) TWI815898B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
CN111009459B (zh) * 2019-12-26 2022-08-16 北京北方华创微电子装备有限公司 含氟残留物去除方法、刻蚀方法和氧化层清洗方法
US11329140B2 (en) 2020-01-17 2022-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
WO2021202411A1 (en) * 2020-04-01 2021-10-07 Lam Research Corporation Selective precision etching of semiconductor materials
JP7065254B2 (ja) * 2020-04-10 2022-05-11 株式会社日立ハイテク エッチング方法
JP7472634B2 (ja) * 2020-04-28 2024-04-23 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US11677015B2 (en) * 2020-05-13 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
DE102020133643A1 (de) 2020-05-13 2021-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur herstellung einer halbleitervorrichtung, und halbleitervorrichtung
JP7550534B2 (ja) 2020-05-15 2024-09-13 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7535424B2 (ja) * 2020-09-29 2024-08-16 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7589578B2 (ja) * 2021-02-16 2024-11-26 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US11295960B1 (en) * 2021-03-09 2022-04-05 Hitachi High-Tech Corporation Etching method
US20220375751A1 (en) * 2021-05-24 2022-11-24 Applied Materials, Inc. Integrated epitaxy and preclean system
JP7457084B2 (ja) * 2021-12-31 2024-03-27 サムス カンパニー リミテッド 基板処理方法及び基板処理装置
US12444613B2 (en) 2022-02-14 2025-10-14 Hitachi High-Tech Corporation Etching processing method
KR102808277B1 (ko) * 2022-09-26 2025-05-15 세메스 주식회사 반도체 소자의 형성 방법 및 반도체 소자의 형성을 위한 기판 처리 시스템
JP2024062579A (ja) * 2022-10-25 2024-05-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2025106307A1 (en) * 2023-11-17 2025-05-22 Lam Research Corporation Selective etch of stack using a hydrogen and fluorine containing gas and an -oh containing gas
US20250246437A1 (en) * 2024-01-26 2025-07-31 Tokyo Electron Limited Selective etching in semiconductor devices
JP2025133516A (ja) * 2024-03-01 2025-09-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006167849A (ja) * 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
US20060207968A1 (en) * 2005-03-08 2006-09-21 Mumbauer Paul D Selective etching of oxides from substrates

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100197670B1 (ko) * 1996-06-27 1999-06-15 김영환 반도체 소자의 콘택홀 형성방법
JP2000021842A (ja) 1998-06-29 2000-01-21 Shin Etsu Handotai Co Ltd 珪素半導体単結晶基板の処理方法
US6391793B2 (en) * 1999-08-30 2002-05-21 Micron Technology, Inc. Compositions for etching silicon with high selectivity to oxides and methods of using same
JP4833512B2 (ja) 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
JP5084250B2 (ja) 2006-12-26 2012-11-28 東京エレクトロン株式会社 ガス処理装置およびガス処理方法ならびに記憶媒体
US20110061812A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US8076250B1 (en) * 2010-10-06 2011-12-13 Applied Materials, Inc. PECVD oxide-nitride and oxide-silicon stacks for 3D memory application
JP2016012609A (ja) * 2014-06-27 2016-01-21 東京エレクトロン株式会社 エッチング方法
JP2016025195A (ja) * 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
US9431268B2 (en) * 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
JP6426489B2 (ja) * 2015-02-03 2018-11-21 東京エレクトロン株式会社 エッチング方法
JP6498022B2 (ja) * 2015-04-22 2019-04-10 東京エレクトロン株式会社 エッチング処理方法
KR102396111B1 (ko) * 2015-06-18 2022-05-10 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9564341B1 (en) * 2015-08-04 2017-02-07 Applied Materials, Inc. Gas-phase silicon oxide selective etch
US9349605B1 (en) * 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
FR3041471B1 (fr) 2015-09-18 2018-07-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation des espaceurs d'une grille d'un transistor
JP6602699B2 (ja) * 2016-03-14 2019-11-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
CN107919277A (zh) 2016-10-08 2018-04-17 北京北方华创微电子装备有限公司 去除晶片上的二氧化硅的方法及制造工艺

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006167849A (ja) * 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
US20060207968A1 (en) * 2005-03-08 2006-09-21 Mumbauer Paul D Selective etching of oxides from substrates

Also Published As

Publication number Publication date
KR20190139770A (ko) 2019-12-18
CN110581067A (zh) 2019-12-17
JP7204348B2 (ja) 2023-01-16
JP2019212872A (ja) 2019-12-12
US20190378724A1 (en) 2019-12-12
CN110581067B (zh) 2023-11-21
TW202013479A (zh) 2020-04-01
TWI815898B (zh) 2023-09-21

Similar Documents

Publication Publication Date Title
KR102282188B1 (ko) 에칭 방법 및 에칭 장치
US9613823B2 (en) Etching method and storage medium
KR102318825B1 (ko) 에칭 방법, 에칭 장치 및 기억 매체
KR101802595B1 (ko) 에칭 방법 및 기억 매체
KR100861851B1 (ko) 실리콘 산화막 형성 방법 및 장치
TWI331364B (enExample)
US11127597B2 (en) Etching method
KR102264076B1 (ko) 클리닝 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
CN106796881B (zh) 蚀刻方法
KR101802580B1 (ko) 에칭 방법 및 기억 매체
CN105122432B (zh) 蚀刻方法
JP2018022716A (ja) 窒化膜の形成方法および形成装置
KR20200143260A (ko) 에칭 방법 및 에칭 장치
CN110783188A (zh) 蚀刻方法和蚀刻装置
KR102651019B1 (ko) 성막 방법 및 성막 장치
KR20230058504A (ko) 에칭 방법 및 에칭 장치
KR20230057348A (ko) 에칭 방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20190604

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200831

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20210427

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210721

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210721

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240620

Start annual number: 4

End annual number: 4