TWI815898B - 蝕刻方法及蝕刻裝置 - Google Patents

蝕刻方法及蝕刻裝置 Download PDF

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Publication number
TWI815898B
TWI815898B TW108119287A TW108119287A TWI815898B TW I815898 B TWI815898 B TW I815898B TW 108119287 A TW108119287 A TW 108119287A TW 108119287 A TW108119287 A TW 108119287A TW I815898 B TWI815898 B TW I815898B
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Taiwan
Prior art keywords
etching
gas
chamber
substrate
film
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TW108119287A
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English (en)
Chinese (zh)
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TW202013479A (zh
Inventor
戶田聡
菊島悟
中込健
小澤淑恵
林軍
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
TW108119287A 2018-06-08 2019-06-04 蝕刻方法及蝕刻裝置 TWI815898B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018110555A JP7204348B2 (ja) 2018-06-08 2018-06-08 エッチング方法およびエッチング装置
JP2018-110555 2018-06-08

Publications (2)

Publication Number Publication Date
TW202013479A TW202013479A (zh) 2020-04-01
TWI815898B true TWI815898B (zh) 2023-09-21

Family

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Family Applications (1)

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TW108119287A TWI815898B (zh) 2018-06-08 2019-06-04 蝕刻方法及蝕刻裝置

Country Status (5)

Country Link
US (1) US20190378724A1 (enExample)
JP (1) JP7204348B2 (enExample)
KR (1) KR102282188B1 (enExample)
CN (1) CN110581067B (enExample)
TW (1) TWI815898B (enExample)

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US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
CN111009459B (zh) * 2019-12-26 2022-08-16 北京北方华创微电子装备有限公司 含氟残留物去除方法、刻蚀方法和氧化层清洗方法
US11329140B2 (en) 2020-01-17 2022-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
WO2021202411A1 (en) * 2020-04-01 2021-10-07 Lam Research Corporation Selective precision etching of semiconductor materials
KR102590870B1 (ko) * 2020-04-10 2023-10-19 주식회사 히타치하이테크 에칭 방법
JP7472634B2 (ja) * 2020-04-28 2024-04-23 東京エレクトロン株式会社 エッチング方法及びエッチング装置
DE102020133643A1 (de) 2020-05-13 2021-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur herstellung einer halbleitervorrichtung, und halbleitervorrichtung
US11677015B2 (en) * 2020-05-13 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
JP7550534B2 (ja) * 2020-05-15 2024-09-13 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7535424B2 (ja) * 2020-09-29 2024-08-16 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7589578B2 (ja) * 2021-02-16 2024-11-26 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US11295960B1 (en) * 2021-03-09 2022-04-05 Hitachi High-Tech Corporation Etching method
US20220375751A1 (en) * 2021-05-24 2022-11-24 Applied Materials, Inc. Integrated epitaxy and preclean system
JP7457084B2 (ja) * 2021-12-31 2024-03-27 サムス カンパニー リミテッド 基板処理方法及び基板処理装置
KR102864347B1 (ko) 2022-02-14 2025-09-24 주식회사 히타치하이테크 에칭 처리 방법
KR102808277B1 (ko) * 2022-09-26 2025-05-15 세메스 주식회사 반도체 소자의 형성 방법 및 반도체 소자의 형성을 위한 기판 처리 시스템
JP2024062579A (ja) * 2022-10-25 2024-05-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2025106307A1 (en) * 2023-11-17 2025-05-22 Lam Research Corporation Selective etch of stack using a hydrogen and fluorine containing gas and an -oh containing gas
US20250246437A1 (en) * 2024-01-26 2025-07-31 Tokyo Electron Limited Selective etching in semiconductor devices
JP2025133516A (ja) * 2024-03-01 2025-09-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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TW201715077A (zh) * 2015-08-07 2017-05-01 應用材料股份有限公司 氧化物蝕刻選擇性系統

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US20020052121A1 (en) * 1999-08-30 2002-05-02 Micron Technology, Inc. Compositions for etching silicon with high selectivity to oxides and methods of using same
TW201700778A (zh) * 2015-01-05 2017-01-01 蘭姆研究公司 用於矽與鍺氧化物之同向性原子層蝕刻
TW201715077A (zh) * 2015-08-07 2017-05-01 應用材料股份有限公司 氧化物蝕刻選擇性系統

Also Published As

Publication number Publication date
US20190378724A1 (en) 2019-12-12
KR102282188B1 (ko) 2021-07-26
CN110581067B (zh) 2023-11-21
JP7204348B2 (ja) 2023-01-16
CN110581067A (zh) 2019-12-17
KR20190139770A (ko) 2019-12-18
JP2019212872A (ja) 2019-12-12
TW202013479A (zh) 2020-04-01

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