TWI815898B - 蝕刻方法及蝕刻裝置 - Google Patents

蝕刻方法及蝕刻裝置 Download PDF

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Publication number
TWI815898B
TWI815898B TW108119287A TW108119287A TWI815898B TW I815898 B TWI815898 B TW I815898B TW 108119287 A TW108119287 A TW 108119287A TW 108119287 A TW108119287 A TW 108119287A TW I815898 B TWI815898 B TW I815898B
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TW
Taiwan
Prior art keywords
etching
gas
chamber
substrate
film
Prior art date
Application number
TW108119287A
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English (en)
Chinese (zh)
Other versions
TW202013479A (zh
Inventor
戶田聡
菊島悟
中込健
小澤淑恵
林軍
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202013479A publication Critical patent/TW202013479A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
TW108119287A 2018-06-08 2019-06-04 蝕刻方法及蝕刻裝置 TWI815898B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018110555A JP7204348B2 (ja) 2018-06-08 2018-06-08 エッチング方法およびエッチング装置
JP2018-110555 2018-06-08

Publications (2)

Publication Number Publication Date
TW202013479A TW202013479A (zh) 2020-04-01
TWI815898B true TWI815898B (zh) 2023-09-21

Family

ID=68763617

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108119287A TWI815898B (zh) 2018-06-08 2019-06-04 蝕刻方法及蝕刻裝置

Country Status (5)

Country Link
US (1) US20190378724A1 (enExample)
JP (1) JP7204348B2 (enExample)
KR (1) KR102282188B1 (enExample)
CN (1) CN110581067B (enExample)
TW (1) TWI815898B (enExample)

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US11329140B2 (en) * 2020-01-17 2022-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
WO2021202411A1 (en) * 2020-04-01 2021-10-07 Lam Research Corporation Selective precision etching of semiconductor materials
CN113785382B (zh) * 2020-04-10 2023-10-27 株式会社日立高新技术 蚀刻方法
JP7472634B2 (ja) * 2020-04-28 2024-04-23 東京エレクトロン株式会社 エッチング方法及びエッチング装置
DE102020133643A1 (de) 2020-05-13 2021-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur herstellung einer halbleitervorrichtung, und halbleitervorrichtung
US11677015B2 (en) * 2020-05-13 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
JP7550534B2 (ja) 2020-05-15 2024-09-13 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7535424B2 (ja) * 2020-09-29 2024-08-16 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12568781B2 (en) 2021-01-25 2026-03-03 Lam Research Corporation Selective silicon trim by thermal etching
JP7589578B2 (ja) * 2021-02-16 2024-11-26 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US11295960B1 (en) * 2021-03-09 2022-04-05 Hitachi High-Tech Corporation Etching method
US20220375751A1 (en) * 2021-05-24 2022-11-24 Applied Materials, Inc. Integrated epitaxy and preclean system
KR102897325B1 (ko) * 2021-12-31 2025-12-08 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
CN116918042A (zh) 2022-02-14 2023-10-20 株式会社日立高新技术 蚀刻处理方法
KR102808277B1 (ko) * 2022-09-26 2025-05-15 세메스 주식회사 반도체 소자의 형성 방법 및 반도체 소자의 형성을 위한 기판 처리 시스템
JP2024062579A (ja) * 2022-10-25 2024-05-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2025106307A1 (en) * 2023-11-17 2025-05-22 Lam Research Corporation Selective etch of stack using a hydrogen and fluorine containing gas and an -oh containing gas
US20250246437A1 (en) * 2024-01-26 2025-07-31 Tokyo Electron Limited Selective etching in semiconductor devices
JP2025133516A (ja) * 2024-03-01 2025-09-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN122095788A (zh) 2024-09-19 2026-05-26 株式会社日立高新技术 蚀刻方法以及半导体装置的制造方法
JP2026090024A (ja) * 2024-11-21 2026-06-02 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2026115535A (ja) * 2024-12-27 2026-07-09 東京エレクトロン株式会社 エッチング方法及びエッチング装置

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TW201700778A (zh) * 2015-01-05 2017-01-01 蘭姆研究公司 用於矽與鍺氧化物之同向性原子層蝕刻
TW201715077A (zh) * 2015-08-07 2017-05-01 應用材料股份有限公司 氧化物蝕刻選擇性系統

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TW201700778A (zh) * 2015-01-05 2017-01-01 蘭姆研究公司 用於矽與鍺氧化物之同向性原子層蝕刻
TW201715077A (zh) * 2015-08-07 2017-05-01 應用材料股份有限公司 氧化物蝕刻選擇性系統

Also Published As

Publication number Publication date
JP2019212872A (ja) 2019-12-12
KR102282188B1 (ko) 2021-07-26
KR20190139770A (ko) 2019-12-18
CN110581067A (zh) 2019-12-17
JP7204348B2 (ja) 2023-01-16
TW202013479A (zh) 2020-04-01
CN110581067B (zh) 2023-11-21
US20190378724A1 (en) 2019-12-12

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