CN1101596C - 制备半导体器件的方法 - Google Patents
制备半导体器件的方法 Download PDFInfo
- Publication number
- CN1101596C CN1101596C CN98109612A CN98109612A CN1101596C CN 1101596 C CN1101596 C CN 1101596C CN 98109612 A CN98109612 A CN 98109612A CN 98109612 A CN98109612 A CN 98109612A CN 1101596 C CN1101596 C CN 1101596C
- Authority
- CN
- China
- Prior art keywords
- thin film
- silicon thin
- silicon
- hsg
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP148123/97 | 1997-06-05 | ||
JP148123/1997 | 1997-06-05 | ||
JP14812397A JP3149910B2 (ja) | 1997-06-05 | 1997-06-05 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1202005A CN1202005A (zh) | 1998-12-16 |
CN1101596C true CN1101596C (zh) | 2003-02-12 |
Family
ID=15445780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98109612A Expired - Fee Related CN1101596C (zh) | 1997-06-05 | 1998-06-04 | 制备半导体器件的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6046082A (zh) |
JP (1) | JP3149910B2 (zh) |
KR (1) | KR100262927B1 (zh) |
CN (1) | CN1101596C (zh) |
GB (1) | GB2326024B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1324650C (zh) * | 2003-10-31 | 2007-07-04 | 海力士半导体有限公司 | 制造半导体器件中的电容器的方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4024940B2 (ja) * | 1998-09-04 | 2007-12-19 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6127221A (en) * | 1998-09-10 | 2000-10-03 | Vanguard International Semiconductor Corporation | In situ, one step, formation of selective hemispherical grain silicon layer, and a nitride-oxide dielectric capacitor layer, for a DRAM application |
KR100277909B1 (ko) * | 1998-12-23 | 2001-02-01 | 김영환 | 커패시터의 구조 및 제조 방법 |
KR100334960B1 (ko) * | 1998-12-26 | 2002-06-20 | 박종섭 | 커패시터의 전하저장전극 형성방법 |
JP2001111002A (ja) * | 1999-10-13 | 2001-04-20 | Matsushita Electronics Industry Corp | 半導体記憶容量素子のストレージノード及びその製造方法 |
KR100338822B1 (ko) * | 1999-12-30 | 2002-05-31 | 박종섭 | 반도체장치의 스토리지노드 전극 제조방법 |
JP2002026289A (ja) * | 2000-07-03 | 2002-01-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
KR100379505B1 (ko) * | 2000-07-19 | 2003-04-10 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
US20050171015A1 (en) * | 2003-10-31 | 2005-08-04 | Crabtree Gerald R. | Methods and agents for enhancing bone formation or preventing bone loss |
US7948011B2 (en) * | 2005-09-16 | 2011-05-24 | The Regents Of The University Of California | N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03272165A (ja) * | 1990-03-20 | 1991-12-03 | Nec Corp | 半導体素子及びその製造方法 |
JPH05315543A (ja) * | 1992-05-08 | 1993-11-26 | Nec Corp | 半導体装置およびその製造方法 |
EP0630055A2 (en) * | 1990-03-20 | 1994-12-21 | Nec Corporation | Method for fabricating polycrystalline silicon having micro roughness on the surface |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100219482B1 (ko) * | 1996-05-23 | 1999-09-01 | 윤종용 | 반도체 메모리 장치의 커패시터 제조 방법 |
US5976931A (en) * | 1996-08-30 | 1999-11-02 | United Microelectronics Corp. | Method for increasing capacitance |
TW359868B (en) * | 1997-08-21 | 1999-06-01 | United Microelectronics Corp | DRAM capacitors and production process therefor |
-
1997
- 1997-06-05 JP JP14812397A patent/JP3149910B2/ja not_active Expired - Fee Related
-
1998
- 1998-06-02 GB GB9811880A patent/GB2326024B/en not_active Expired - Fee Related
- 1998-06-03 KR KR1019980020613A patent/KR100262927B1/ko not_active IP Right Cessation
- 1998-06-03 US US09/089,541 patent/US6046082A/en not_active Expired - Lifetime
- 1998-06-04 CN CN98109612A patent/CN1101596C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03272165A (ja) * | 1990-03-20 | 1991-12-03 | Nec Corp | 半導体素子及びその製造方法 |
EP0630055A2 (en) * | 1990-03-20 | 1994-12-21 | Nec Corporation | Method for fabricating polycrystalline silicon having micro roughness on the surface |
JPH05315543A (ja) * | 1992-05-08 | 1993-11-26 | Nec Corp | 半導体装置およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1324650C (zh) * | 2003-10-31 | 2007-07-04 | 海力士半导体有限公司 | 制造半导体器件中的电容器的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1202005A (zh) | 1998-12-16 |
JPH10335607A (ja) | 1998-12-18 |
KR19990006654A (ko) | 1999-01-25 |
US6046082A (en) | 2000-04-04 |
GB2326024A (en) | 1998-12-09 |
GB2326024B (en) | 2002-01-16 |
JP3149910B2 (ja) | 2001-03-26 |
GB9811880D0 (en) | 1998-07-29 |
KR100262927B1 (ko) | 2000-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030404 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20030404 Address after: Kawasaki, Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
ASS | Succession or assignment of patent right |
Owner name: ERBIDA MEMORY CO., LTD. Free format text: FORMER OWNER: NEC ELECTRONICS TAIWAN LTD. Effective date: 20040806 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040806 Address after: Tokyo, Japan Patentee after: Elpida Memory Inc. Address before: Kawasaki, Kanagawa, Japan Patentee before: NEC Corp. |
|
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |