CN1100473C - 结构加固了的球栅阵列半导体封装及系统 - Google Patents
结构加固了的球栅阵列半导体封装及系统 Download PDFInfo
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- CN1100473C CN1100473C CN97121146A CN97121146A CN1100473C CN 1100473 C CN1100473 C CN 1100473C CN 97121146 A CN97121146 A CN 97121146A CN 97121146 A CN97121146 A CN 97121146A CN 1100473 C CN1100473 C CN 1100473C
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Abstract
用于安装集成电路器件的球栅阵列表面的支撑结构,该结构由形成于集成电路器件的球栅阵列面上的任选拐角处的支撑焊料构成。一种形式是,沿由球栅阵列限定的轴形成高熔点焊料的L形图形,其特征在于,L形图形沿一个轴的截面与焊料球的截面匹配,在沿另一轴的焊料球位置之间形成连续体。必要时加支撑焊料,以提供结构加固及热传导。支撑焊料截面的控制可以确保用于连接集成电路器件的熔融低温回流焊的表面张力作用不显著改变最终集成电路器件球与底下的印刷电路板触点间的相对间隔。
Description
本申请涉及1996年7月29日的未决申请S/N 08/688,073,该申请也转让给本申请的受让人。
发明领域
本发明涉及表面安装集成电路器件。特别地,本发明旨在提供适于加固连接受所装配的散热器等大体积物质作用的集成电路器件的球栅阵列的结构配置。
已有技术
集成电路器件和它们的应用发展成目前的先进设计经历了极大的变化。随着集成电路管芯(芯片)工作时钟速率的提高,其尺寸显著地增大。同时,有源和无源集成电路元件的尺寸减小。由于这种趋势,先进的集成电路需要相当大量的管脚及更大的功率耗散能力。
可以满足许多所希望的集成电路器件封装及连接目的是球栅阵列技术,这些封装包括倒装芯片和陶瓷封装变形。通过利用直接贴装于倒装芯片或陶瓷封装上的小型散热器可以解决低功率消耗问题。然而,随着先进的微处理器和专用集成电路(ASIC)的功率输出达到100瓦,早先解决低功率耗散问题的方法已不再能满足要求。
高功率耗散水平需要大散热器及散热器和集成电路器件之间有很低的热阻。因此,趋向于用相当大体积的散热器,增加到散热器主体和集成电路器件之间的压力。由于冲击和振动加重了这种压力和质量的影响,引起了回流焊连接中的蠕变,并伴随有焊料球与底层结构上的触点之间的电连接失效率增大,所述底层结构一般是印刷电路板。
类似于共同待审查的系列美国专利申请08/688073,利用较大截面积的焊料柱来加固球栅阵列型集成电路器件的拐角,由于利用不同的制造工艺制造焊料柱和焊料球,所以此方法前景并不好。结果,它们具有与它们的标称高度有关的不同的公差。在焊料或加固焊料柱与集成电路器件接合时,焊料球和柱不会在随后将贴有机电路板或其它类型的器件载体封装时所需的公差内共平面。另外,利用球栅阵列封装的集成电路器件一般利用低温37/63的铅/锡焊料接合于有机板上。由于支撑柱和球的截面相差很大,所以在有机板的装配焊盘上的熔融共晶焊料的表面张力为柱大于焊料球。柱和球的这种不同浸润性会导致某些球栅阵列连接与板上的装配焊盘分离开的现象,从而导致有机板上的产生故障元件。
因此,需要能加固预计有散热器和压力的焊料球结构,而不会使阵列中的各焊料球的连接特性退化的球栅阵列器件连接设计。
发明概述
借助通过一种结构适于将基片上的集成电路连接到介质平面的表面上的触点图形的表面安装基片可以解决现有技术中的这个问题,所述结构由形成于基片第一侧上的焊料球阵列和至少一个形成于基片的第一侧上的一个支撑焊料图形构成,其特征在于支撑焊料的外形在与阵列的第一轴相同方向上基本上与所形成的焊料球的截面相匹配,以及支撑焊料的外形在与阵列的第二轴相同方向上提供的截面表示为从一个焊料球延伸到连续设置的焊料球的焊料的连续体。
按另一形式,本发明涉及一种安装于印刷电路板上并支撑散热器的加固了的球栅阵列器件,包括印刷电路板上的触点图形,带有集成电路的基片,该基片包括形成于基片第一侧上的焊料球阵列及至少一个形成于基片第一侧上的支撑焊料图形,其特征在于,支撑焊料的外形在与阵列的第一轴相同方向上基本上与所形成的焊料球的截面相匹配,以及支撑焊料的外形在与阵列的第二轴相同方向上提供的截面表示为从一个焊料球延伸到连续设置的焊料球的连续体,印刷电路板上的触点图形与基片上的相应焊料球和支撑焊料间的焊料焊接连接,以及与基片第二侧上的平面接触的散热器。
按本发明的特别形式,具有与焊料球类似截面的L形图形的高熔点支撑焊料形成于基片的拐角处。也可以按照沿一个轴的截面类似于焊料球截面的前提形成其它形状和其它位置的支撑焊料。在基片与印刷路板间提供热通道时,支撑焊料的位置和形状从结构上加固该连接。
关键的结构特征是使沿阵列一个轴支撑焊料的截面与焊料球的截面相匹配。截面的相匹配可以消除因熔化的回流焊料作用的不同使基片和电路板间相对间距增大的问题。
附图简述
结合以下详细说明的实施例会更清楚地了解本发明的这些和其它特征。
图1和图2示意描述采用较大截面积的柱加固球栅阵列集成电路器件时制造过程。
图3示意性地说明本发明支撑焊料的各实施例,包括在拐角处的L形垫支撑焊料,和其它形状的支撑焊料,它们可以用于提供结构上的加固及热传导。
图4是图3中标志出的部位处的剖面图,展示出沿阵列一个轴的截面的相对一致性。
图5示意描述本发明一种实施情况,表示出了支撑焊料结构、散热器及相对于安装于印刷电路板上的组合结构的压力源。
优选实施例描述
下面说明在将集成电路器件连接到印刷电路板上的铜触点相应阵列时,面临热循环效应、压力及加重了冲击和振动的散热器,要求以上提到的球栅阵列器件通过所有焊料球部位上的回流焊焊接保持电连接的问题。集成电路器件是一个带有球栅阵列输入/输出端子的陶瓷或塑料集成电路封装或具有球栅阵列输入/输出端子的倒装芯片集成电路管芯。贴装于封装或倒装芯片管芯上的焊料球最好由90/10的铅/锡合金焊料构成,其标称熔点为310℃,习惯称之为高熔点焊料。
印刷电路板铜触点与焊料球间的连接实际通过膏状沉积的低熔点焊料的回流完成。焊料自身最好由37/63的铅/锡合金构成,其熔点为约180℃。
目的是按这样一种方式把集成电路器件装于印刷电路板上,即在有热的机械的应力情况下焊料球连接是可靠的,例如可以通过与该集成电路器件的相反侧面压紧接触的散热器来增强这种连接。按今天的技术,带有按阵列排列的600个焊料球的球栅阵列集成电路器件已常见,每个焊料球必须在面对以前提到的应力的情况下在延长了的产品寿命期间保持连接。
图1和2示意性地展示出上述未决专利申请所提出的方法的各步骤,但发现此方法是不适用的。图1是具有铜触点2图形的印刷电路板1、集成电路器件3、多个器件焊盘4及器件3拐角处的大截面圆柱形焊料柱6的侧视图,焊料柱6进一步由突出物7展示。印刷电路板1的触点8与集成电路器件3上的焊盘9之间的宽的焊料连接,提供结构加固。焊料球11和支撑焊料6由90/10铅/锡高熔点焊料构成,并通过回流接合到器件3上的焊盘9。在定位集成电路器件3之前,在触点2和8上筛网沉积焊膏12,焊膏12由树脂和36/63的铅/锡低熔点型焊料构成。焊料球11和柱6压到焊膏12上。此点的实施情况不同于在只存在加固焊料柱6、触点8和焊盘9的情况下的球栅阵列贴装。在此制造阶段,直接进行焊料12的回流,集成电路器件3与印刷电路板1间的标称距离为X。
图2示意性地展示了遵循低温焊料回流的结构,包括由支撑柱6导致的不良影响。即,尺寸Y一般要超过尺寸X,使焊料球11和触点2间的回流焊料连接减弱。例如参考数字13所示的连接会在或立即或在极小的热或机械应力循环之后失效。
上述提到的尺寸问题一方面是因元件公差造成的。即,球栅阵列一般由公差为±0.02mm到±0.03mm的0.87mm直径的球构成。而利用不同工艺制造的柱6的公差一般为±0.04mm到±0.05mm。这种大的差异在集成电路电路器件贴装到有机印刷电路板上时相当严重的减弱了其接合力。
另一方面是因焊料柱6与球11的截面有相当大的差异造成的。集成电路器件3利用筛网印刷至柱6和球11的接触焊盘2和8上的焊膏12与电路板1接合。由于接触焊盘2和8的尺寸相差很大,所以造成筛网印刷至它们上的共晶焊膏的量不同。导致了焊料回流工艺期间柱和球的浸润性不同,器件3伴随提升。器件3的伴随提升致使焊料球11和接触焊盘2之间的接合力减弱,如图2所示。这种弱接合力经常会导致集成电路器件现场正常工作期间性能失效或退化,这是人们所不希望的。所以,采用支撑柱降低了而不是增强了焊料球连接的可靠性。
图3示意性地展示出本发明的集成电路器件3的球栅阵列表面,其中包括一些改进。由14表示的V形、L形支撑元件加到集成电路器件球栅阵列表面的拐角区。支撑元件最好由高熔点焊料构成,一般为90/10铅/锡组分,它们沿球栅阵列的轴向从每个拐角处延伸越过多个焊料球间隔增量。例如,支撑焊料16延伸越过4个焊料间隔增量,而支撑焊料17延伸越过3个焊料间隔增量。支撑焊料18在每个轴向上只延伸越过1个焊料球间隔增量。同时在支撑焊料16限定的图形范围内保持着对称。
包括16、17和18的支撑焊料的特征在于,它们沿一个轴的截面与任何一个焊料球11的截面相匹配。图4示出了这种匹配的截面,其中焊料球11、支撑焊料16和支撑焊料18有基本相同的截面形状。支撑焊料与焊料球一样一般由如91/10铅/锡合金等高熔点焊料构成。在制造时,支撑焊料的使用厚度几乎与焊料球直径匹配。还是如图4所示,支撑焊料16和18与焊料球11一样利用低熔点焊料20分别贴到集成电路器件焊盘15和4上。这种低熔点焊料一般为共晶铅/锡、铅/铋、锡/铋、锡/铟等合金。
支撑焊料拐角部位截面不同,例如支撑焊料16的19表示的部位,其作用极小。而且,必要时,可以通过如虚线21所示的变窄的支撑焊料结构补偿这种作用。
22所示部位展示了其它形状的不同支撑焊料,关键的特征是上述提到的其一个轴向的截面与焊料球的截面相匹配,而另一轴在焊料球位置间限定一个连续体。显然,交叉分支数量增加,如23示作的“+”图形,将增强对变窄的需要,以便对熔融焊料表面张力作用进行补偿。应注意,这些图形可以是对称的或不对称的,这样可以使设计者在某部位和有关图形处设置支撑焊料时具有灵活性,以使结构完整性最佳。
由于焊料是热导体,板型结构提供一定程度的散热器容量,所以可以有选择地构图和设置支撑焊料,使之与集成电路器件上高功率输出部位相配。局部的热点一般在处理器和ASIC器件处。同样地,必要时,支撑焊料还可以用于供电、提供地线或向和从集成电路器件传输信号,同时具有支撑功能。
图5示意性地展示了将集成电路器件和相关的散热器安装于印刷电路板上时本发明的代表性应用。如图所示,通过焊料回流将印刷电路板1与陶瓷基片24和芯片26构成的集成电路器件贴装在一起。散热器27与集成电路器件上顶面物理接触,以使集成电路和散热器之间的热传导最大。所示的该实施例展示出利用通过印刷电路板1延伸的弹簧28来保持散热器与集成电路器件间的压紧连接。散热器27还可以贴粘于集成电路器件上。
图5展示的组件展示出通过回流低熔点焊料29与印刷电路板触点2物理和电连接的高熔点焊料球11的球栅阵列。图中还示出了位于集成电路器件的拐角31和32处的支撑焊料33,该支撑焊料最好为图3中14所示的L形。高熔点支撑焊料33和其底下的印刷电路板1上的铜触点34间的连接也可以通过低温度焊料的回流实现。
焊料球和支撑焊料的形成沿用一般的单独贴装焊料球的方式。即,使用的焊料球和支撑焊料设置于适应它们的形状的舟形器皿。然后使用沉积的低温焊膏,集成电路器件和舟形器皿经受适合于使该高温焊料球和支撑焊料接合到该集成电路器件的低温回流。通过分离工艺完成在印刷电路板上的安装。
器件的安装以通过掩模在电路印刷电路板的触点上筛网沉积焊膏开始,最好是用能在200-220℃的温度下回流的37/63的共晶铅/锡焊料。对准带有焊料球和支撑焊料的集成电路器件,使焊料球和支撑焊料能插到印刷电路板上的焊膏中。最后,在对组件进行200-220℃的回流。
此后,最好用热化合物贴装散热器,使集成电路器件和散热器间的热传递最大。
如图5所示,所得结构不仅提供有利于球栅阵列的表面安装电气连接,而且提供带有适于耐冷却高功率集成电路器件的散热器的热和物理环境的加固结构的集成电路器件。
对于本领域的普通技术人员来说很显然,上述的实施例只是实施本发明的各种方案的示例,在不脱离由所附权利要求书所限定的本发明范围的情况下,可以对此作等效置换。
Claims (23)
1.一种适于将集成电路连接到介质平面的表面上的触点图形的表面安装基片,包括:
形成于基片第一侧上的焊料球阵列;
形成于基片第一侧上的至少一个支撑焊料图形,其特征在于:
支撑焊料在阵列的某一轴向的截面上基本上与所形成的焊料球的截面相匹配;及
支撑焊料在阵列的另一轴向的截面为从一个焊料球到连续设置的焊料球的焊料的连续体的截面。
2.如权利要求1的基片,其特征在于,基片是陶瓷集成电路封装。
3.如权利要求1的基片,其特征在于,基片是倒装芯片型的集成电路管芯。
4.如权利要求1的基片,其特征在于,基片是有机集成电路封装。
5.如权利要求2的基片,其特征在于,支撑焊料是在基片的两个或更多的拐角处的“L”形图形。
6.如权利要求3的基片,其特征在于,支撑焊料是在基片的两个或更多的拐角处的“L”形图形。
7.如权利要求4的基片,其特征在于,支撑焊料是在基片的两个或更多的拐角处的“L”形图形。
8.如权利要求5的基片,其特征在于,支撑焊料由高熔点焊料构成。
9.如权利要求6的基片,其特征在于,支撑焊料由高熔点焊料构成。
10.如权利要求7的基片,其特征在于,支撑焊料由高熔点焊料构成。
11.如权利要求8的基片,其特征在于,焊料球的截面实际为半圆形。
12.如权利要求9的基片,其特征在于,焊料球的截面实际为半圆形。
13.如权利要求10的基片,其特征在于,焊料球的截面实际为半圆形。
14.一种安装于印刷电路板上并支撑散热器的加固了的球栅阵列器件,包括:
印刷电路板上的触点图形;
带有集成电路的基片,该基片包括:
形成了基片第一侧上的焊料球阵列;及
形成于基片第一侧上的至少一个支撑焊料图形,其特征在于:支撑焊料在阵列的某一轴向的截面上基本上与所形成的焊料球的截面相匹配;以及支撑焊料在阵列的另一轴向的截面为从一个焊料球到连续设置的焊料球的焊料的连续体的截面;
印刷电路板上的触点图形与基片上相应的焊料球和支撑焊料间的焊料焊接连接;及
与基片第二侧上平面热接触的散热器。
15.如权利要求14的器件,其特征在于,基片是陶瓷集成电路封装。
16.如权利要求14的器件,其特征在于,基片是倒装芯片型的集成电路管芯。
17.如权利要求14的器件,其特征在于,基片是有机集成电路封装。
18.如权利要求15的器件,其特征在于,支撑焊料是在基片的两个或更多的拐角处的“L”形图形。
19.如权利要求16的器件,其特征在于,支撑焊料是在基片的两个或更多的拐角处的“L”形图形。
20.如权利要求17的器件,其特征在于,支撑焊料是在基片的两个或更多的拐角处的“L”形图形。
21.如权利要求18的器件,其特征在于,支撑焊料由高熔点焊料构成。
22.如权利要求19的器件,其特征在于,支撑焊料由高熔点焊料构成。
23.如权利要求20的器件,其特征在于,支撑焊料由高熔点焊料构成。
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CN102593067A (zh) * | 2011-01-10 | 2012-07-18 | 三星半导体(中国)研究开发有限公司 | 焊点高度可控的平面栅格阵列封装互连结构及其制造方法 |
CN102593067B (zh) * | 2011-01-10 | 2014-09-17 | 三星半导体(中国)研究开发有限公司 | 焊点高度可控的平面栅格阵列封装互连结构及其制造方法 |
CN102610580A (zh) * | 2011-01-21 | 2012-07-25 | Nxp股份有限公司 | 用于fcbga的非金属加强圈 |
WO2020168552A1 (en) * | 2019-02-22 | 2020-08-27 | Intel Corporation | Joint connection of corner non-critical to function (nctf) ball for bga solder joint reliability (sjr) enhancement |
US11990395B2 (en) | 2019-02-22 | 2024-05-21 | Intel Corporation | Joint connection of corner non-critical to function (NCTF) ball for BGA solder joint reliability (SJR) enhancement |
Also Published As
Publication number | Publication date |
---|---|
KR100247716B1 (ko) | 2000-03-15 |
MY116990A (en) | 2004-04-30 |
US5796169A (en) | 1998-08-18 |
CN1182957A (zh) | 1998-05-27 |
KR19980041827A (ko) | 1998-08-17 |
SG60129A1 (en) | 1999-02-22 |
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