CN109524408A - 半导体存储器 - Google Patents
半导体存储器 Download PDFInfo
- Publication number
- CN109524408A CN109524408A CN201811092138.3A CN201811092138A CN109524408A CN 109524408 A CN109524408 A CN 109524408A CN 201811092138 A CN201811092138 A CN 201811092138A CN 109524408 A CN109524408 A CN 109524408A
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- conductor
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- semiconductor memory
- memory
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 218
- 239000004020 conductor Substances 0.000 claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000012212 insulator Substances 0.000 claims abstract description 6
- 230000015654 memory Effects 0.000 claims description 135
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
- 238000003860 storage Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006399 behavior Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
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- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
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- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
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Abstract
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TW202118023A (zh) | 2021-05-01 |
US20210151465A1 (en) | 2021-05-20 |
US20230345726A1 (en) | 2023-10-26 |
TW202333359A (zh) | 2023-08-16 |
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