CN109524358A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN109524358A
CN109524358A CN201810051242.1A CN201810051242A CN109524358A CN 109524358 A CN109524358 A CN 109524358A CN 201810051242 A CN201810051242 A CN 201810051242A CN 109524358 A CN109524358 A CN 109524358A
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face
semiconductor
modification layer
semiconductor substrate
energy absorption
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CN109524358B (zh
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藤田努
友野章
大野天颂
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Kioxia Corp
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Toshiba Memory Corp
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Abstract

本发明的实施方式提供一种既抑制了半导体芯片的不良又提高了与封装树脂的密接性及杂质吸除效果的半导体装置及其制造方法。本实施方式的半导体装置具备半导体衬底。半导体元件设置于半导体衬底的第1面上。能量吸收膜设置于第1面上，吸收光能而发热。第1绝缘膜设置于半导体元件及能量吸收膜上。第2绝缘膜设置于处在第1面相反侧的半导体衬底的第2面上。第1改质层设置于处在第1面外缘与第2面外缘之间的半导体衬底的侧面。第2改质层设置于能量吸收膜与第1改质层之间的侧面。劈开面设置于第1改质层与第2改质层之间的侧面。

Description

半导体装置及其制造方法
[相关申请]
本申请享有以日本专利申请2017-180403号(申请日：2017年9月20日)为基础申请的优先权。本申请通过参照该基础申请而包含基础申请的全部内容。
技术领域
本发明的实施方式涉及一种半导体装置及其制造方法。
背景技术
已开发出一种通过对半导体晶片的切晶区照射激光光线而将半导体晶片单片化成半导体芯片的切晶技术。在该切晶技术中，激光光线会将半导体晶片内部的晶体改质，通过从该经改质部位将半导体晶片劈开，半导体晶片会被单片化成半导体芯片。
在以如上方式制造出的半导体芯片的侧面中，经激光光线改质所得的改质层会使与封装树脂的密接性提高，并使杂质吸除(gettering)效果提高。另一方面，这种改质层会使半导体芯片本身的强度降低，从而有导致形成于半导体芯片的元件发生不良的担忧。
发明内容
本发明的实施方式提供一种既抑制了半导体芯片的不良又提高了与封装树脂的密接性及杂质吸除效果的半导体装置。
本实施方式的半导体装置具备半导体衬底。半导体元件设置于半导体衬底的第1面上。能量吸收膜设置于第1面上，吸收光能而发热。第1绝缘膜设置于半导体元件及能量吸收膜上。第2绝缘膜设置于处在第1面相反侧的半导体衬底的第2面上。第1改质层设置于处在第1面外缘与第2面外缘之间的半导体衬底的侧面。第2改质层设置于能量吸收膜与第1改质层之间的侧面。劈开面设置于第1改质层与第2改质层之间的侧面。
附图说明
图1是表示本实施方式的半导体芯片1的构成例的剖视图。
图2是表示半导体芯片1的侧面状态的概念性立体图。
图3(A)～(C)是表示本实施方式的半导体芯片1的制造方法的一例的立体图或剖视图。
图4是沿着图3(B)的切晶线DL剖开的局部剖视图。
具体实施方式
以下，参照附图对本发明的实施方式进行说明。本实施方式并不限定本发明。在以下的实施方式中，关于半导体衬底的上下方向，有以设置半导体元件的第1面为上的情况、及以没有半导体元件的第2面为上的情况，且有与依照重力加速度而规定的上下方向不同的情况。另外，附图是示意性或概念性的图，各部分的比例等未必与实物相同。在说明书及附图中，对与结合已给附图加以叙述过的要素相同的要素，标注相同的符号并适当省略详细的说明。
图1是表示本实施方式的半导体芯片1的构成例的剖视图。本实施方式的半导体芯片1例如例如为NAND(Not And，与非)型EEPROM(Electrically Erasable andProgrammable Read-Only-Memory，电可擦除可编程只读存储器)等半导体存储器。图1中表示出了半导体芯片1的TSV(Through-Silicon Via，硅通孔)及其周边部。
半导体芯片1具备半导体衬底10、半导体元件15、STI(Shallow TrenchIsolation，浅槽隔离)20、焊垫(凸块)30、配线层35、第1绝缘膜37、38、TSV40、第2绝缘膜50、及凸块60。
半导体衬底10例如为硅衬底，且已被薄膜化至例如约30μm以下。半导体衬底10具有第1面F1、及位于第1面F1相反侧的第2面F2。在半导体衬底10的第1面F1，具有形成半导体元件的工作区、及将工作区之间电分离的STI(Shallow Trench Isolation)20。在工作区形成有存储单元阵列、晶体管、电阻元件、电容器元件等半导体元件15。对于STI20，例如使用氧化硅膜等绝缘膜。在STI上20，未设置半导体元件，但设置有将半导体元件电连接于TSV40的焊垫30及配线层35。半导体元件15设置于半导体衬底10的第1面F1上。
在半导体衬底10的第2面F2，未设置半导体元件及配线，但设置有电连接于TSV40的凸块60等。
焊垫30及配线层35设置于半导体衬底10的第1面F1上，且电连接于半导体元件(例如，晶体管等)。对于焊垫30及配线层35，例如使用铜、铝、钨或钛等低电阻金属。配线层35作为吸收切晶激光的光能而发热的能量吸收膜发挥功能。焊垫30也可作为能量吸收膜的一部分发挥功能。
TSV40及障壁金属BM设置于半导体衬底10的第1面F1与第2面F2之间，且贯通半导体衬底10。进而，TSV40及障壁金属BM贯通STI20，且电连接于导电体30、35。由此，TSV40及障壁金属BM将与位于第1面F1侧的配线层35的电连接一直引延至第2面F2侧。对于TSV40，例如使用镍等低电阻金属。障壁金属BM设置于第5绝缘膜50(以下，也会称之为间隔膜)50的侧面。对于障壁金属BM，例如使用Ti、Ta、Ru或它们的积层膜。以下，也会将TSV40及障壁金属BM统称为金属电极40、BM。此外，只要能将TSV40较好地嵌入至接触孔CH内，也就不一定需要设置障壁金属BM。
第1绝缘膜37、38设置于处在半导体衬底10的第1面F1上的半导体元件15及配线层35上。对于绝缘膜37，例如使用氧化硅膜、氮化硅膜等。对于绝缘膜38，例如使用聚酰亚胺等有机膜。
作为第2绝缘膜的间隔膜50设置于处在第1面F1相反侧的半导体衬底10的第2面F2上。另外，间隔膜50设置于金属电极40、BM与半导体衬底10之间，将金属电极40、BM与半导体衬底10电分离。对于间隔膜50，例如使用氧化硅膜、氮化硅膜等绝缘膜。
凸块60在半导体衬底10的第2面F2侧设置于TSV40上。对于凸块60，例如使用锡、铜等金属。
图2是表示半导体芯片1的侧面状态的概念性立体图。半导体衬底10具有将第1面F1外缘与第2面F2外缘之间相连的侧面FS。在侧面FS设置有第1改质层LM1、第2改质层LM2、及劈开面LC1、LC2。
第1改质层LM1以与第1及第2面F1、F2大致平行地延伸的方式呈带状设置于侧面FS，且位于第1面F1与第2面F2的中间位置。第1改质层LM1是使半导体衬底10改质所得的晶体缺陷层，通过切晶激光而形成于半导体衬底10的侧面FS的表层。如下所述，切晶激光断断续续地照射至半导体晶片的切晶区域，而在焦点位置利用热将半导体晶片的晶体(晶体硅)改质(例如，非晶化或多晶化)。因此，第1改质层LM1的晶体缺陷部分断断续续地设置于半导体衬底10的侧面FS。第1改质层LM1的D1方向的厚度(宽度)W1例如为10μm以下。D1方向为半导体衬底10的厚度方向(由第1面F1往第2面F2的方向或其相反方向)。此外，第1改质层LM1的晶体缺陷的大小大于第2改质层LM2的晶体缺陷的大小。
第2改质层LM2与第1改质层LM1同样地，以与第1及第2面F1、F2大致平行地延伸的方式呈带状设置于侧面FS，但第2改质层LM2设置得比第1改质层LM1更靠第1面F1侧。即，第2改质层LM2设置于配线层35与第1改质层LM1之间的侧面FS，且设置于第1面F1的表层。第2改质层LM2也是通过切晶激光使半导体衬底10改质所得的晶体缺陷层，且也形成于半导体衬底10的侧面FS的表层。第2改质层LM2的晶体缺陷部分也与第1改质层LM1的晶体缺陷部分同样地，断断续续地设置于半导体衬底10的侧面FS。第2改质层LM2的D1方向的厚度(宽度)W2例如为10μm以下。
劈开面LC1设置于第1改质层LM1与第2改质层LM2之间的侧面FS。劈开面LC2设置于第1改质层LM1与第2面F2之间的侧面FS。劈开面LC1、LC2是半导体衬底10(例如，硅衬底)的劈开面，且是单晶硅的晶面。因此，劈开面LC1、LC2是晶体缺陷比第1及第2改质层LM1、LM2少且几乎没有凹凸的镜面状态的面。即，劈开面LC1、LC2是几乎没有经切晶激光改质所得的改质面的光滑面。劈开面LC1、LC2各自的D1方向的厚度(宽度)W3、W4例如为10μm以上。
例如，在激光切晶中，激光一面使半导体晶片改质一面将其切断。因此，改质后的半导体芯片的侧面部分具有改质层(改质面)。改质层(改质面)例如由非晶硅或多晶硅等使单晶硅改质所得的材料构成，且含有许多晶体缺陷。
如上所述，本实施方式的半导体衬底10的侧面FS具有经切晶激光改质所得的第1及第2改质层LM1、LM2、以及没有晶体缺陷的劈开面LC1、LC2，而成为四层结构。
在侧面FS中，第1及第2改质层LM1、LM2以外的区域成为劈开面LC1、LC2。由此，可使半导体芯片1本身的机械强度得以维持。例如，在侧面FS整面被改质的情况下，改质层的晶体缺陷较多，凹凸也相对较大。在这种情况下，半导体芯片1的机械强度变弱，半导体芯片1变得容易破损或开裂。针对这个问题，本实施方式的半导体芯片1设置了劈开面LC1、LC2，由此能在某种程度上维持机械强度。
另一方面，在侧面FS整面成为劈开面的情况下，金属离子等杂质容易从侧面FS侵入，而有可能会对半导体元件15造成不良影响。另外，由于劈开面是光滑面，所以封装树脂与侧面FS的密接性较差，封装树脂容易从侧面FS剥离。针对这个问题，本实施方式的半导体芯片1在侧面FS中设置了第1及第2改质层LM1、LM2。第1及第2改质层LM1、LM2具有相对较多的晶体缺陷，所以具有金属离子等杂质的吸除效果。因此，通过使第1改质层LM1位于第1面F1与第2面F2之间的侧面FS，能在某种程度上抑制杂质从侧面FS侵入。另外，第2改质层LM2设置于半导体元件15的某第1面F1侧(配线层35正下方)的侧面FS。也可以说，第2改质层LM2设置于半导体衬底10的第1面F1表层侧的侧面FS。由此，能在某种程度上抑制杂质从半导体衬底10的第1面F1附近的侧面FS(半导体元件15附近的侧面FS)侵入。
进而，通过在侧面FS设置有第1及第2改质层LM1、LM2，封装树脂与侧面FS的密接性得以提高，从而封装树脂变得难以从侧面FS剥离。
为了设置第2改质层LM2，而在第1面F1上设置有作为能量吸收膜的配线层35。配线层35如下所述吸收激光光线来使半导体衬底10的第1面F1侧的表面层改质。由此，第2改质层LM2设置于配线层35正下方的半导体衬底10。为了将第2改质层LM2设置于半导体衬底10的侧面FS，而将配线层35一直设置至半导体芯片1的第1面F1的外缘上方。即，在半导体晶片中，切晶线上也设置有配线层35。由此，在切晶线上的配线层35正下方的半导体衬底10，形成第2改质层LM2。
如上所述，在半导体芯片1中，能使半导体衬底10的侧面FS成为改质层LM1、LM2及劈开面LC1、LC2的四层结构。改质层LM1、LM2能抑制杂质从侧面FS的中间区域或半导体元件15附近的侧面FS侵入。并且，能提高封装树脂与半导体芯片1的密接性。另外，劈开面LC1、LC2能维持半导体芯片1的机械强度。
进而，第1绝缘膜37、38能抑制杂质从第1面F1侵入，作为第2绝缘膜的间隔膜50能抑制杂质从第2面F2侵入。即，第1绝缘膜37、38、50是为了提高吸除效果而设置的。这样一来，根据本实施方式，不仅能抑制杂质从第1及第2面F1、F2侵入，通过第1及第2改质层LM1、LM2，还能抑制杂质从侧面FS侵入。
接下来，对本实施方式的半导体装置的制造方法进行说明。
图3(A)～图3(C)是表示本实施方式的半导体芯片1的制造方法的一例的立体图或剖视图。
首先，在半导体晶片100的第1面F1上形成图1的半导体元件15。在半导体元件上形成配线层35，在半导体元件及配线层35上以及它们的周围形成绝缘膜37、38。然后，在半导体晶片100的第1面F1上贴附支撑衬底，利用CMP(Chemical Mechanical Polishing，化学机械抛光)法研磨(pre-grind，预磨)半导体晶片100的第2面F2。研磨半导体晶片100后，在半导体晶片100的第2面F2上形成第2绝缘膜50。通过预磨，半导体晶片100的厚度会变成30μm以下。然后，以将半导体晶片100的第1面F1与第2面F2之间贯通的方式利用已知的方法形成TSV40((via-last process，后通孔工序)。进而，在半导体芯片1的表面形成电极垫(未图示)。也可在电极垫上设置金属凸块(未图示)。
图3(A)表示形成有半导体元件及TSV后的半导体晶片100。多个半导体芯片1之间存在切晶线DL，如下所述，通过沿该切晶线DL进行切断，半导体芯片1即会被单片化。
将第1面F1上的支撑衬底卸除后，如图3(B)所示，在张设于晶片环130内的柔性树脂带131上贴附半导体晶片100的第1面F2。接着，利用激光振荡器105，沿着该切晶线对半导体晶片100的第2面F2的与切晶线DL对应的部分照射激光光线。由此，在半导体晶片100的内部(硅衬底的内部)形成第1及第2改质层(非晶层或多晶硅层)LM1、LM2。
图4是沿着图3(B)的切晶线DL剖开的局部剖视图。激光振荡器105使激光光线从半导体衬底10的第2面F2入射，并使之在半导体衬底10的任意深度位置聚焦。在本实施方式中，激光光线是以在第1面F1与第2面F2的中间区域聚焦的方式照射的。激光光线优选具有800nm以上且3000nm以下的波长以便能使单晶硅改质。在波长低于800nm的情况下，激光光线在硅内部即被吸收的概率增加，而难以形成改质层。若波长超过3000nm，则激光光线穿过硅的概率增加，而难以形成改质层。例如，激光光线也可为所谓的隐形激光(stealthlaser)。通过将这种激光照射至半导体衬底10，能在激光光线的聚焦位置，例如加热单晶硅，将其改质为非晶硅或多晶硅。由此，在激光光线的照射下，第1改质层LM1形成于处在第1面F1与第2面F2的中间区域的半导体衬底10。
另外，激光光线从聚焦位置朝向第1面F1地穿过半导体衬底10，而被作为能量吸收膜的配线层35吸收。这时，配线层35发热，通过该热，配线层35附近的半导体衬底10的表层区域被改质为非晶硅或多晶硅。由此，第2改质层形成于第1面F1附近的半导体衬底10的区域。此外，激光光线的强度要设定为不会使配线层35熔解的程度的强度。这是因为，若激光光线的强度高达会使配线层35熔解的程度，则有半导体元件15因该热而遭到破坏的担忧。
激光光线是按某间距P1的间隔而进行照射的。由此，在改质层LM1中，改质部分121、122以某间距P1的间隔而形成。在间距P1较窄的情况下，改质部分121相连，而成为层状(带状)改质层LM1，改质部分122相连，而成为层状(带状)改质层LM2。
第1改质层LM1与第2改质层LM2之间的半导体衬底10未被改质，而以晶体硅的形式残留。第1改质层LM1与第1面F1之间的半导体衬底10也未被改质，而以晶体硅的形式残留。若如下所述地将半导体晶片100单片化，则切晶线的未改质部分在侧面FS中成为劈开面LC1、LC2。此外，在这个阶段，半导体晶片100尚未被单片化成半导体芯片1。
接着，如图3(C)所示，从下方利用顶推部件132顶推树脂带131，由此拉伸树脂带131(使之延展)。由此，将树脂带131及半导体晶片100一起往外侧拉伸。这时，半导体晶片100沿着第1及第2改质层LM1、LM2(即，沿着切晶线)劈开，而单片化成多个半导体芯片1。至此，半导体芯片1完成。这时，图4的未改质部分在侧面FS中成为劈开面LC1、LC2。
然后，半导体芯片1被分别拾取，安装于安装衬底上，并利用封装树脂加以密封。至此，半导体封装完成。
如上所述，通过在第1面F1上设置配线层35，而形成第2改质层LM2。由此，能使半导体衬底10的侧面FS成为改质层LM1、LM2及劈开面LC1、LC2的四层结构。改质层LM1、LM2能抑制杂质从侧面FS的中间区域或半导体元件15附近的侧面FS侵入。并且，能提高封装树脂与半导体芯片1的密接性。另外，通过劈开面LC1、LC2，能维持半导体芯片1的机械强度。
对本发明的若干实施方式进行了说明，但这些实施方式只是作为例子而提出的，并非意图限定发明的范围。这些实施方式能以其他各种方式加以实施，在不脱离发明主旨的范围内，能进行各种省略、替换、变更。这些实施方式及其变化包含在发明的范围及主旨中，同样包含在权利要求书所记载的发明及其等同的范围内。
[符号的说明]
1 半导体芯片
10 半导体衬底
15 半导体元件
20 STI
30 焊垫
35 配线层
37、38 第1绝缘膜
40 TSV
50 第2绝缘膜
60 凸块
F1 第1面
F2 第2面
FS 侧面
LM1 第1改质层
LM2 第2改质层
LC1、LC2 劈开面

Claims (9)

1.一种半导体装置，具备：
半导体衬底；
半导体元件，设置于所述半导体衬底的第1面上；
能量吸收膜，设置于所述第1面上，吸收光能而发热；
第1绝缘膜，设置于所述半导体元件及所述能量吸收膜上；
第2绝缘膜，设置于处在所述第1面相反侧的所述半导体衬底的第2面上；
第1改质层，设置于处在所述第1面外缘与所述第2面外缘之间的所述半导体衬底的侧面，且含有晶体缺陷；
第2改质层，设置于所述能量吸收膜与所述第1改质层之间的所述侧面，且含有晶体缺陷；及
劈开面，设置于所述第1改质层与所述第2改质层之间的所述侧面。
2.根据权利要求1所述的半导体装置，其中
所述第2改质层设置于所述能量吸收膜正下方的所述侧面。
3.根据权利要求1或2所述的半导体装置，其中
所述能量吸收膜为金属膜。
4.根据权利要求1或2所述的半导体装置，其中
所述能量吸收膜在所述第1绝缘膜上一直设置至所述第1面的外缘上方。
5.根据权利要求1或2所述的半导体装置，其中
所述第2改质层设置于所述半导体元件正下方的所述半导体衬底。
6.根据权利要求1或2所述的半导体装置，其中
所述第1改质层的晶体缺陷的大小大于所述第2改质层的晶体缺陷的大小。
7.一种半导体装置的制造方法，制造具备设置于第1面上的半导体元件、设置于所述半导体元件上的第1绝缘膜、设置于所述第1绝缘膜上的能量吸收膜、及设置于处在所述第1面相反侧的第2面上的第2绝缘膜的半导体衬底，且包括如下步骤：
将所述半导体衬底贴附于带上；
从所述第2面沿着所述半导体衬底的切晶线，以在位于所述第1面与所述第2面的中间区域的所述半导体衬底上聚焦的方式，照射激光光线；及
拉伸所述带，由此将所述半导体衬底沿所述切晶线切断，而使之单片化成所述半导体芯片。
8.根据权利要求7所述的半导体装置的制造方法，其中
在所述激光光线的照射下，将位于所述第1面与所述第2面的中间区域的所述半导体衬底改质为第1改质层，并且将所述能量吸收膜附近的所述半导体衬底改质为第2改质层。
9.根据权利要求8所述的半导体装置的制造方法，其中
在所述激光光线的照射下，所述第1改质层与所述第2改质层之间的所述半导体衬底未被改质。
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