JP3795040B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP3795040B2 JP3795040B2 JP2003404987A JP2003404987A JP3795040B2 JP 3795040 B2 JP3795040 B2 JP 3795040B2 JP 2003404987 A JP2003404987 A JP 2003404987A JP 2003404987 A JP2003404987 A JP 2003404987A JP 3795040 B2 JP3795040 B2 JP 3795040B2
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- 239000004065 semiconductor Substances 0.000 title claims description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 48
- 238000007789 sealing Methods 0.000 claims description 46
- 238000005192 partition Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000000638 solvent extraction Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 42
- 229910052710 silicon Inorganic materials 0.000 description 42
- 239000010703 silicon Substances 0.000 description 42
- 239000010408 film Substances 0.000 description 28
- 230000008569 process Effects 0.000 description 20
- 229910000679 solder Inorganic materials 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000000149 penetrating effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Description
図1〜図3を参照して、この発明の第1の実施の形態につき説明する。図1(A)は、この実施の形態に係る半導体装置にダイシングされる前のウェハの一部を概略的に示す平面図である。また、図2(A)は、図1(A)を一点鎖線II−II線に沿って切断して得られる切り口(すなわち、断面)を図中矢印方向から見た断面図である。図2(B)から図3(B)は、図2(A)に続く、この実施の形態の半導体装置及び半導体装置の製造方法の説明に供する断面図である。尚、図1(A)では、基板の裏面上に形成される、第2配線層36、ランド36及び表面保護膜39の図示を省略してある。
図4を参照して、この発明の第2の実施の形態につき説明する。図4(A)及び図4(B)は、この実施の形態の半導体装置及びその製造方法の説明に供する断面図である。尚、第1の実施の形態で既に説明した構成要素と同一の構成要素には同一の番号を付して示し、その具体的な説明を省略する(以下の各実施の形態についても同様とする)。
図5〜図7を参照して、この発明の第3の実施の形態につき説明する。図5は、この実施の形態に係る半導体装置にダイシングされる前のウェハの一部を概略的に示す底面図である。また、図6(A)は、図5を一点鎖線VI−VI線に沿って切断して得られる切り口を図中矢印方向から見た断面図である。図6(B)から図7(B)は、図6(A)に続く、この実施の形態の半導体装置及び半導体装置の製造方法の説明に供する断面図である。
12:シリコン基板(基板)
12a:シリコン基板の主表面
12b:シリコン基板の裏面
14:電極パッド
16:パッシベーション膜
18:保護膜
20:第1絶縁層
22:第2絶縁層
24:スルーホール
26:第1配線層(配線層)
28:ポスト部(導体部)
32:配線部
34:半田ボール
35:サブ領域
36:第2配線層
38:ランド
39:表面保護膜
40:回路素子形成領域(アクティブ領域)(中央領域)
42:封止層
42a:封止層の表面
45:ダイシング領域(周辺領域)
50、95:パッケージ構造体
50b:積層体の裏面
55:貫通部
56:絶縁膜
57:導電部材
60:段差部
65、85:ダイシングシート
65b:ダイシングシートの裏面
70:レーザ光源
72:対象物
74:集光レンズ
80、110:改質部
82、112:クラック
88:溝
98:埋め込み部
99:凹部(溝部)
108:SOI基板(基板)
102:半導体支持基板
104:絶縁層
106:半導体層
106a:半導体層の主表面
141:グランドパッド
Claims (5)
- 基板の主表面に、回路素子と該回路素子に接続された電極パッドとが形成され、
前記主表面と該主表面に対向する裏面との間を貫通する貫通孔が形成され、
前記貫通孔の内壁上に絶縁膜が形成され、
前記貫通孔内の前記絶縁膜上に、前記回路素子と電気的に接続された導電部材が設けられ、
前記主表面上に形成され前記電極パッドと電気的に接続された配線層と該配線層の表面に形成されたポスト部とからなる配線部が設けられ、
前記ポスト部上に外部端子が設けられ、
前記外部端子が露出するように前記配線部及び前記主表面上を覆う、前記基板よりもレーザ光を透過させ難い封止層が形成されるとともに、
前記回路素子及び前記電極パッドとを含む中央領域と該中央領域を囲み前記貫通孔を含む周辺領域とを有する複数のチップ領域と、該複数のチップ領域の各々を区画する区画領域とが定義された加工対象物を準備する第1工程と、
該加工対象物を前記チップ領域ごとに個片化する第2工程と、
を含む半導体装置の製造方法であって、
前記第2工程が、
前記裏面側から前記区画領域に、前記レーザ光を非加熱方式で照射する照射工程と、
該照射工程よりも後で、前記区画領域の前記封止層を前記主表面側から切削する切削工程と、
を含むことを特徴とする半導体装置の製造方法。 - 半導体支持基板上に絶縁膜が形成され、且つ、該絶縁膜上に半導体層が形成され、
該半導体層の主表面に、回路素子及び該回路素子に接続された電極パッドが形成され、
前記半導体層の前記主表面から前記半導体支持基板に達する溝部が形成され、
前記溝部内に、前記半導体層と電気的に絶縁され且つ前記回路素子及び前記半導体支持基板と電気的に接続された導電部材が設けられ、
前記主表面上に形成され前記電極パッドと電気的に接続された配線層と該配線層の表面に形成されたポスト部とからなる配線部が設けられ、
前記主表面上に外部端子が設けられ、
前記外部端子が露出するように前記配線部及び前記主表面上を覆う、前記半導体支持基板よりもレーザ光を透過させ難い封止層が形成されるとともに、
前記回路素子及び前記電極パッドとを含む中央領域と該中央領域を囲み前記貫通孔を含む周辺領域とを有する複数のチップ領域と、該複数のチップ領域の各々を区画する区画領域とが定義された加工対象物を準備する第1工程と、
該加工対象物を前記チップ領域ごとに個片化する第2工程と、
を含む半導体装置の製造方法であって、
前記第2工程が、
前記半導体支持基板の裏面側から前記区画領域に、前記レーザ光を非加熱方式で照射する照射工程と、
該照射工程よりも後で、前記区画領域の前記封止層を前記主表面側から切削する切削工程と、
を含むことを特徴とする半導体装置の製造方法。 - 請求項1または2に記載の半導体装置の製造方法において、
前記非加熱方式は、前記基板の内部に前記レーザ光を集光させて行うことを特徴とする半導体装置の製造方法。 - 請求項1〜3のいずれかに記載の半導体装置の製造方法において、
前記切削工程は、前記封止層の中途の深さまで該封止層を切削する工程であり、且つ、
前記第2工程が、該切削工程後に前記封止層を劈開する工程をさらに含む、
ことを特徴とする半導体装置の製造方法。 - 請求項1〜4のいずれかに記載の半導体装置の製造方法において、
前記レーザ光の光源がYAGレーザであることを特徴とする半導体装置の製造方法。
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JP4251054B2 (ja) * | 2003-10-01 | 2009-04-08 | 株式会社デンソー | 半導体装置の製造方法 |
TWI278048B (en) * | 2003-11-10 | 2007-04-01 | Casio Computer Co Ltd | Semiconductor device and its manufacturing method |
JP3925809B2 (ja) * | 2004-03-31 | 2007-06-06 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
JP4471852B2 (ja) * | 2005-01-21 | 2010-06-02 | パナソニック株式会社 | 半導体ウェハ及びそれを用いた製造方法ならびに半導体装置 |
JP2014146829A (ja) * | 2005-11-10 | 2014-08-14 | Renesas Electronics Corp | 半導体チップおよび半導体装置 |
JP4923874B2 (ja) * | 2005-11-16 | 2012-04-25 | 株式会社デンソー | 半導体ウェハ |
JP4736738B2 (ja) * | 2005-11-17 | 2011-07-27 | 株式会社デンソー | レーザダイシング方法およびレーザダイシング装置 |
US7829998B2 (en) | 2007-05-04 | 2010-11-09 | Stats Chippac, Ltd. | Semiconductor wafer having through-hole vias on saw streets with backside redistribution layer |
US8445325B2 (en) | 2007-05-04 | 2013-05-21 | Stats Chippac, Ltd. | Package-in-package using through-hole via die on saw streets |
US7723159B2 (en) * | 2007-05-04 | 2010-05-25 | Stats Chippac, Ltd. | Package-on-package using through-hole via die on saw streets |
JP5067068B2 (ja) * | 2007-08-17 | 2012-11-07 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び記憶媒体 |
US8072079B2 (en) * | 2008-03-27 | 2011-12-06 | Stats Chippac, Ltd. | Through hole vias at saw streets including protrusions or recesses for interconnection |
JP5217557B2 (ja) * | 2008-03-27 | 2013-06-19 | パナソニック株式会社 | 電子部品の製造方法 |
US9686673B2 (en) * | 2010-05-18 | 2017-06-20 | Electric Mirror, Llc | Apparatuses and methods for streaming audio and video |
US10462651B1 (en) * | 2010-05-18 | 2019-10-29 | Electric Mirror, Llc | Apparatuses and methods for streaming audio and video |
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JP2014033164A (ja) * | 2012-08-06 | 2014-02-20 | Disco Abrasive Syst Ltd | ウエーハの加工方法及びレーザー加工装置 |
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JP6545712B2 (ja) * | 2014-12-25 | 2019-07-17 | デンカ株式会社 | レーザーダイシング用粘着シートおよび半導体装置の製造方法 |
JP2017088782A (ja) * | 2015-11-13 | 2017-05-25 | 日東電工株式会社 | 積層体および合同体・組み合わせの回収方法・半導体装置の製造方法 |
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