CN108231569B - 中介层的制造方法 - Google Patents

中介层的制造方法 Download PDF

Info

Publication number
CN108231569B
CN108231569B CN201711225182.2A CN201711225182A CN108231569B CN 108231569 B CN108231569 B CN 108231569B CN 201711225182 A CN201711225182 A CN 201711225182A CN 108231569 B CN108231569 B CN 108231569B
Authority
CN
China
Prior art keywords
glass substrate
cutting
laminate
interposer
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201711225182.2A
Other languages
English (en)
Other versions
CN108231569A (zh
Inventor
铃木克彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN108231569A publication Critical patent/CN108231569A/zh
Application granted granted Critical
Publication of CN108231569B publication Critical patent/CN108231569B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • B23K26/402Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/02Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/06Grinders for cutting-off
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/24Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising with cutting discs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486Via connections through the substrate with or without pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0094Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/16Composite materials, e.g. fibre reinforced
    • B23K2103/166Multilayered materials
    • B23K2103/172Multilayered materials wherein at least one of the layers is non-metallic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54Glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227Other objects, e.g. metallic pieces
    • H05K2201/10378Interposers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mining & Mineral Resources (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Laser Beam Processing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Dicing (AREA)

Abstract

提供中介层的制造方法,能够提高使用了玻璃基板的中介层的耐热性。一种中介层的制造方法,从材料基板制造出多个中介层,该材料基板具有玻璃基板和层叠体,其中,该玻璃基板被呈格子状设定的多条分割预定线划分成多个区域,该层叠体层叠在该玻璃基板的第1面或与该第1面相反的一侧的第2面上,并且该层叠体包含绝缘层和配线层,该中介层的制造方法的特征在于,包含如下的工序:切削槽形成工序,使第1切削刀具沿着分割预定线切入层叠体的露出面,在层叠体中形成未到达玻璃基板的深度的切削槽;以及分割工序,使宽度比切削槽窄的第2切削刀具沿着切削槽切入玻璃基板,对玻璃基板进行分割而制造出多个中介层。

Description

中介层的制造方法
技术领域
本发明涉及使用了玻璃基板的中介层的制造方法。
背景技术
为了实现半导体装置的更小型化和高集成化,实用化了在厚度方向上重叠半导体芯片而利用贯通电极(TSV:Through Silicon Via:硅通孔)进行连接的三维安装技术。但是,在该三维安装技术中,由于在厚度方向上重叠多个半导体芯片,所以容易使散热性降低,也无法使用尺寸不同的半导体芯片。此外,还存在制造成本容易随着贯通于半导体芯片的贯通电极的形成而变高的问题。
近年来,还提出了借助使用硅晶片而形成的中介层(中继用基板)来安装多个半导体芯片的安装技术(例如,参照专利文献1)。该安装技术也被称为2.5维安装技术等,例如,具有存储功能的半导体芯片和具有运算功能的半导体芯片按照不重叠的方式与中介层连接。在2.5维安装技术中,由于至少一部分半导体芯片不在厚度方向上重叠,所以容易解决上述的三维安装技术的各种问题。
另一方面,在使用了硅晶片的中介层中还存在高频区域中的损失较大、价格较高的问题。因此,提出了在中介层中使用有利于降低高频区域中的损失并且价格低廉的玻璃基板的技术(例如,参照专利文献2)。例如,在玻璃基板的至少一方的主面上形成包含绝缘层和配线层的层叠体,然后沿着预先设定的分割预定线对玻璃基板进行分割而得到该中介层。
专利文献1:日本特表2003-503855号公报
专利文献2:日本特开2015-198212号公报
通常,利用使旋转的切削刀具沿着分割预定线切入的方法来进行玻璃基板的分割。但是,通过该方法制造的中介层在耐热性方面存在问题。具体来说,例如,当对该中介层进行温度循环试验(TCT:Temperature Cycling Test)时,会在玻璃基板上产生裂纹,或是层叠体从玻璃基板剥离而使次品率变高。
发明内容
本发明是鉴于该问题点而完成的,其目的在于,提供中介层的制造方法,能够提高使用了玻璃基板的中介层的耐热性。
根据本发明的一个方式,提供中介层的制造方法,从材料基板制造出多个中介层,该材料基板具有玻璃基板和层叠体,其中,该玻璃基板被呈格子状设定的多条分割预定线划分成多个区域,该层叠体层叠在该玻璃基板的第1面或与该第1面相反的一侧的第2面上,并且该层叠体包含绝缘层和配线层,该中介层的制造方法的特征在于,包含如下的工序:切削槽形成工序,使第1切削刀具沿着该分割预定线切入该层叠体的露出面,在该层叠体中形成未到达该玻璃基板的深度的切削槽;以及分割工序,使宽度比该切削槽窄的第2切削刀具沿着该切削槽切入该玻璃基板,对该玻璃基板进行分割而制造出多个中介层。
在本发明的一个方式中,优选所述第2切削刀具所包含的磨粒的粒径比所述第1切削刀具所包含的磨粒的粒径小。
并且,根据本发明的另一个方式,提供中介层的制造方法,从材料基板制造出多个中介层,该材料基板具有玻璃基板和层叠体,其中,该玻璃基板被呈格子状设定的多条分割预定线划分成多个区域,该层叠体层叠在该玻璃基板的第1面或与该第1面相反的一侧的第2面上,并且该层叠体包含绝缘层和配线层,该中介层的制造方法的特征在于,包含如下的工序:激光加工槽形成工序,沿着该分割预定线对该层叠体的露出面照射对于该层叠体具有吸收性的波长的激光束,在该层叠体中形成未到达该玻璃基板的深度的激光加工槽;以及分割工序,使宽度比该激光加工槽窄的切削刀具沿着该激光加工槽切入该玻璃基板,对该玻璃基板进行分割而制造出多个中介层。
根据本发明的中介层的制造方法,在沿着分割预定线在层叠体中形成了未到达玻璃基板的深度的槽(切削槽或激光加工槽)之后,使宽度比该槽窄的切削刀具沿着槽切入玻璃基板,因此在所制造的中介层的端部留下较薄的层叠体。
当对端部的层叠体较厚的以往的中介层进行加热时,因玻璃基板与层叠体的热膨胀系数的差别而引起的较大的力作用于端部,层叠体容易从玻璃基板剥离。与此相对,在通过本发明制造的中介层中,由于端部的层叠体变薄,所以与通过以往的方法制造的中介层相比不容易对端部作用将层叠体剥离的较大的力。
也就是说,即使对通过本发明制造的中介层进行加热,层叠体也不容易从玻璃基板剥离。这样,根据本发明的中介层的制造方法,能够提高使用了玻璃基板的中介层的耐热性。
附图说明
图1的(A)是示意性地示出在本实施方式中使用的材料基板的结构例的立体图,图1的(B)是将材料基板的一部分(区域A)放大而得的剖视图。
图2的(A)和图2的(B)是用于说明切削槽形成工序的局部剖视侧视图。
图3的(A)是用于说明在切削槽形成工序之后进行的分割工序的局部剖视侧视图,图3的(B)是示意性地示出经分割工序而制造的中介层的结构例的立体图。
图4的(A)是用于说明激光加工槽形成工序的局部剖视侧视图,图4的(B)是用于说明在激光加工槽形成工序之后进行的分割工序的局部剖视侧视图。
标号说明
1:材料基板;3:中介层;11:玻璃基板;11a:第1面(正面);11b:第2面(背面);11c:贯通孔;13:分割预定线(间隔道);15:层叠体;15a:露出面;15b:切削槽;15c:激光加工槽;17:配线层;19:绝缘层;21:电极;2:切削刀具(第1切削刀具);4:切削刀具(第2切削刀具);6:激光照射单元;8:切削刀具;L:激光束。
具体实施方式
参照附图对本发明的一个方式的实施方式进行说明。本实施方式的中介层的制造方法是用于从具有玻璃基板和层叠体的材料基板制造出多个中介层的方法,包含切削槽形成工序(参照图2的(A)和图2的(B))和分割工序(参照图3的(A))。
在切削槽形成工序中,使切削刀具(第1切削刀具)沿着设定于玻璃基板的分割预定线切入层叠体的露出面,在层叠体中形成未到达玻璃基板的深度的切削槽。在分割工序中,使宽度比切削槽窄的切削刀具(第2切削刀具)沿着切削槽切入玻璃基板,对玻璃基板进行分割而制造出多个中介层。以下,对本实施方式的中介层的制造方法进行详述。
图1的(A)是示意性地示出在本实施方式中使用的材料基板1的结构例的立体图,图1的(B)是将材料基板1的一部分(区域A)放大而得的剖视图。例如,使用圆盘状的玻璃基板11来构成本实施方式的材料基板1,该玻璃基板11由钠钙玻璃、无碱玻璃、石英玻璃等玻璃制成,该材料基板1被呈格子状设定的多条分割预定线(间隔道)13划分成多个区域。
在玻璃基板11的第1面(正面)11a和与第1面11a相反的一侧的第2面(背面)11b上,分别设置有由多个层(膜)层叠而成的层叠体15。该层叠体15例如包含由金属等导体制成的配线层17和由树脂等绝缘体制成的绝缘层19,通过绝缘层19将相邻的配线层17之间绝缘。
并且,在玻璃基板11上形成有从第1面11a朝向第2面11b贯通的贯通孔11c。在贯通孔11c中埋入有由金属等导体制成的电极21。第1面11a侧的配线层17与第2面11b侧的配线层17经由该电极21来连接。
另外,在本实施方式中,例示了在玻璃基板11的第1面11a和第2面11b的两个面上具有层叠体15的材料基板1,但层叠体15也可以仅设置在第1面11a和第2面11b中的一方上。在该情况下,还能够省略贯通孔11c或电极21等。并且,层叠体15(配线层17、绝缘层19)、贯通孔11c、电极21等的结构和形成方法等也没有特别的限制。
通过沿着分割预定线13对这样构成的材料基板1进行分割,能够制造出多个中介层3(参照图3的(B))。在本实施方式的中介层的制造方法中,首先,进行切削槽形成工序,使第1切削刀具沿着分割预定线13切入层叠体15的露出面,在层叠体中形成未到达玻璃基板11的深度的切削槽。
图2的(A)和图2的(B)是用于说明切削槽形成工序的局部剖视侧视图。在该切削槽形成工序中,例如,使用环状的切削刀具(第1切削刀具)2,该切削刀具2利用树脂或金属等结合材料将金刚石等磨粒固定并形成为规定的宽度(水平方向上的长度、厚度)。
构成切削刀具2的磨粒或树脂的材质根据层叠体15的材质等而适当设定。切削刀具2所包含磨粒的粒径并没有特别的限制,但例如为20μm~40μm左右,优选为25μm~35μm左右(代表性的是30μm左右)。切削刀具2的宽度也没有特别的限制,但例如为150μm~500μm,优选为200μm~300μm左右。
该切削刀具2安装在作为与水平方向大致平行的旋转轴的主轴(未图示)的一端侧。主轴的另一端侧与电动机等旋转驱动源(未图示)连结,安装于主轴的切削刀具2通过从该旋转驱动源传递的力而旋转。
在切削槽形成工序中,首先,将材料基板1保持成使玻璃基板11的第1面11a侧朝向上方。例如,能够使用卡盘工作台(未图示)等来进行材料基板1的保持。接着,对材料基板1与切削刀具2的相对的位置进行调整,使切削刀具2在任意的分割预定线13的延长线上对齐。
并且,将切削刀具2的下端对齐在比第1面11a侧的层叠体15的露出面15a低且比玻璃基板11的第1面11a高的位置。之后,使切削刀具2旋转而使材料基板1和切削刀具2沿着与作为对象的分割预定线13平行的方向相对地移动。
由此,如图2的(A)所示,使切削刀具2沿着作为对象的分割预定线13切入第1面11a侧的层叠体15的露出面15a,能够在第1面11a侧的层叠体15中形成未到达玻璃基板11的深度的切削槽15b。
另外,切削刀具2的下端的位置被调整为从切削槽15b的底部到玻璃基板11的第1面11a的距离例如为1μm~30μm左右(优选为2μm~20μm左右)。即,沿着分割预定线13留下例如厚度为1μm~30μm左右(优选为2μm~20μm左右)的层叠体15。由此,能够适当缓和因受热而在中介层3的端部产生的力,防止层叠体15的剥离。
在沿着作为对象的分割预定线13在第1面11a侧的层叠体15中形成了切削槽15b之后,重复进行上述的动作而沿着全部的分割预定线13在第1面11a侧的层叠体15中形成切削槽15b。之后,使材料基板1的上下翻转而如图2的(B)所示,按照同样的过程在第2面11b侧的层叠体15中形成切削槽15b。当沿着全部的分割预定线13在第2面11b侧的层叠体15中形成切削槽15b时,切削槽形成工序结束。
另外,在本实施方式中,当在第1面11a侧的层叠体15中形成了切削槽15b之后,在第2面11b侧的层叠体15中形成切削槽15b,但也可以在第2面11b侧的层叠体15中形成了切削槽15b之后,在第1面11a侧的层叠体15中形成切削槽15b。
在切削槽形成工序之后,进行分割工序,使宽度比切削槽15b窄的切削刀具(第2切削刀具)沿着切削槽15b切入玻璃基板11,对玻璃基板11进行分割而制造出多个中介层3。图3的(A)是用于说明分割工序的局部剖视侧视图。
在该分割工序中,使用切削刀具(第2切削刀具)4,该切削刀具4利用树脂或金属等结合材料将金刚石等磨粒固定并形成为比切削槽15b窄的宽度。构成切削刀具4的磨粒或树脂的材质根据玻璃基板11的材质等而适当设定。
切削刀具4所包含的磨粒的粒径并没有特别的限制,但例如为5μm~20μm左右,优选为15μm左右。另一方面,切削刀具4的宽度需要比切削槽15b的宽度(即,切削刀具2的宽度)窄。具体来说,例如为50μm~150μm左右,优选为75μm~125μm左右(代表性的是100μm左右)。由此,能够在所制造的中介层3的端部留下较薄的层叠体15。
该切削刀具4也安装在作为与水平方向大致平行的旋转轴的主轴(未图示)的一端侧。主轴的另一端侧与电动机等旋转驱动源(未图示)连结,安装于主轴的切削刀具4通过从该旋转驱动源传递的力而旋转。
在分割工序中,首先,将材料基板1保持成使玻璃基板11的第1面11a侧朝向上方。例如,能够使用卡盘工作台(未图示)等来进行材料基板1的保持。接着,对材料基板1与切削刀具4的相对的位置进行调整,使切削刀具4在任意的切削槽15b(分割预定线13)的延长线上对齐。
并且,使切削刀具4的下端对齐在比形成于第2面11b侧的层叠体15中的切削槽15b的底部低的位置。之后,使切削刀具4旋转而使材料基板1和切削刀具4沿着与作为对象的切削槽15b(分割预定线13)平行的方向相对地移动。
由此,如图3的(A)所示,使切削刀具4沿着作为对象的切削槽15b(分割预定线13)切入玻璃基板11,能够对玻璃基板11进行分割。在沿着作为对象的切削槽15b(分割预定线13)对玻璃基板11进行了分割之后,重复进行上述的动作而沿着全部的切削槽15b(分割预定线13)对玻璃基板11进行分割。
当沿着全部的切削槽15b(分割预定线13)对玻璃基板11进行分割而完成多个中介层3时,分割工序结束。另外,在本实施方式中,使切削刀具4从第1面11a侧切入玻璃基板11,但也可以将材料基板1保持成使第2面11b侧朝向上方并使切削刀具4从第2面11b侧切入玻璃基板11。
图3的(B)是示意性地示出通过本实施方式制造的中介层3的结构例的立体图。如图3的(B)所示,在通过本实施方式制造的中介层3的端部,层叠体15比其他的区域薄。由此,能够通过玻璃基板11与层叠体15的热膨胀系数的差别将产生于端部的力(例如,内部应力)抑制为较小,防止层叠体15的剥离。即,能够提高中介层3的耐热性。
如以上那样,根据本实施方式的中介层的制造方法,在沿着分割预定线(间隔道)13在层叠体15中形成了未到达玻璃基板11的深度的切削槽15b之后,使宽度比该切削槽15b窄的切削刀具4沿着切削槽15b切入玻璃基板11,因此在所制造的中介层3的端部留下较薄的层叠体。
当对端部的层叠体较厚的以往的中介层进行加热时,因玻璃基板与层叠体的热膨胀系数的差别而引起的较大的力作用于端部,层叠体容易从玻璃基板剥离。与此相对,在通过本实施方式制造的中介层3中,由于端部的层叠体15变薄,所以与通过以往的方法制造的中介层相比不容易对端部作用将层叠体15剥离的较大的力。
也就是说,即使对通过本实施方式制造的中介层3进行加热,层叠体15也不容易从玻璃基板11剥离。这样,根据本实施方式的中介层的制造方法,能够提高使用了玻璃基板11的中介层3的耐热性。
为了确认该耐热性,进行了将低温处理(-55℃、15分钟)和高温处理(125℃、15分钟)分别重复500次的温度循环试验(TCT:Temperature Cycling Test),结果在本实施方式的中介层6中,在全部30个样品中没有发现层叠体15的剥离。另一方面,在端部的层叠体较厚的以往的中介层中,在全部30个样品中发现了层叠体的剥离。
另外,本发明并不限于上述实施方式的记载,能够实施各种变更。例如,也可以代替形成切削槽15b的切削槽形成工序而进行利用激光束形成激光加工槽的激光加工槽形成工序。图4的(A)是用于说明激光加工槽形成工序的局部剖视侧视图。
在该激光加工槽形成工序中,例如,使用激光照射单元6,该激光照射单元6用于照射适合于激光加工槽的形成的激光束L。激光照射单元6具有聚光用的透镜(未图示),使由激光振荡器(未图示)脉冲振荡出的激光束L照射并会聚在规定的位置。激光振荡器构成为能够脉冲振荡出对于层叠体15(特别是绝缘层19)具有吸收性的波长(容易被吸收的波长)的激光束L。
在激光加工槽形成工序中,首先,将材料基板1保持成使玻璃基板11的第1面11a侧朝向上方。例如,能够使用卡盘工作台(未图示)等来进行材料基板1的保持。接着,对材料基板1与激光照射单元6的相对的位置进行调整,使激光照射单元6在任意的分割预定线13的延长线上对齐。
然后,一边从激光照射单元6照射激光束L,一边使材料基板1和激光照射单元6沿着与作为对象的分割预定线13平行的方向相对地移动。由此,如图4的(A)所示,沿着作为对象的分割预定线13对第1面11a侧的层叠体15的露出面15a照射激光束L,能够对该第1面11a侧的层叠体15进行烧蚀加工而形成激光加工槽15c。
其中,在能够在第1面11a侧的层叠体15中形成未到达玻璃基板11的深度的激光加工槽15c的范围内对使激光束L会聚的聚光点的位置、激光束L的光斑直径以及激光束L的输出等条件进行调整。具体来说,按照沿着分割预定线13留下例如厚度为1μm~30μm左右(优选为2μm~20μm左右)的层叠体15的条件照射激光束L。由此,能够防止因受热引起的层叠体15的剥离。
在沿着作为对象的分割预定线13在第1面11a侧的层叠体15中形成了激光加工槽15c之后,重复进行上述的动作而沿着全部的分割预定线13在第1面11a侧的层叠体15中形成激光加工槽15c。之后,使材料基板1的上下翻转而按照同样的过程在第2面11b侧的层叠体15中形成激光加工槽15c。当沿着全部的分割预定线13在第2面11b侧的层叠体15中形成激光加工槽15c时,激光加工槽形成工序结束。
另外,这里,当在第1面11a侧的层叠体15中形成了激光加工槽15c之后,在第2面11b侧的层叠体15中形成激光加工槽15c,但也可以在第2面11b侧的层叠体15中形成了激光加工槽15c之后,在第1面11a侧的层叠体15中形成激光加工槽15c。
在激光加工槽形成工序之后,进行分割工序,使宽度比激光加工槽15c窄的切削刀具沿着激光加工槽15c切入玻璃基板11,对玻璃基板11进行分割而制造出多个中介层3。图4的(B)是用于说明在激光加工槽形成工序之后进行的分割工序的局部剖视侧视图。
按照与上述实施方式的分割工序同样的过程来进行该分割工序。另外,在该分割工序中,使用宽度形成为比激光加工槽15c窄的切削刀具8。构成切削刀具8的磨粒或树脂的材质根据玻璃基板11的材质等而适当设定。磨粒的粒径或切削刀具8的厚度的详细内容与切削刀具4相同。当沿着全部的切削槽15b(分割预定线13)对玻璃基板11进行分割而完成多个中介层3时,分割工序结束。
另外,上述实施方式的构造、方法等只要在不脱离本发明的目的的范围内便能够适当变更而实施。

Claims (3)

1.一种中介层的制造方法,从材料基板制造出多个中介层,该材料基板具有玻璃基板和层叠体,其中,该玻璃基板被呈格子状设定的多条分割预定线划分成多个区域,该层叠体层叠在该玻璃基板的第1面或与该第1面相反的一侧的第2面上,并且该层叠体包含绝缘层和配线层,该中介层的制造方法的特征在于,包含如下的工序:
切削槽形成工序,使第1切削刀具沿着该分割预定线切入该层叠体的露出面,在该层叠体中形成未到达该玻璃基板的深度的切削槽;以及
分割工序,使宽度比该切削槽窄的第2切削刀具沿着该切削槽切入该玻璃基板,对该玻璃基板进行分割而制造出多个中介层。
2.根据权利要求1所述的中介层的制造方法,其特征在于,
所述第2切削刀具所包含的磨粒的粒径比所述第1切削刀具所包含的磨粒的粒径小。
3.一种中介层的制造方法,从材料基板制造出多个中介层,该材料基板具有玻璃基板和层叠体,其中,该玻璃基板被呈格子状设定的多条分割预定线划分成多个区域,该层叠体层叠在该玻璃基板的第1面或与该第1面相反的一侧的第2面上,并且该层叠体包含绝缘层和配线层,该中介层的制造方法的特征在于,包含如下的工序:
激光加工槽形成工序,沿着该分割预定线对该层叠体的露出面照射对于该层叠体具有吸收性的波长的激光束,在该层叠体中形成未到达该玻璃基板的深度的激光加工槽;以及
分割工序,使宽度比该激光加工槽窄的切削刀具沿着该激光加工槽切入该玻璃基板,对该玻璃基板进行分割而制造出多个中介层。
CN201711225182.2A 2016-12-14 2017-11-29 中介层的制造方法 Active CN108231569B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-242235 2016-12-14
JP2016242235A JP6779574B2 (ja) 2016-12-14 2016-12-14 インターポーザの製造方法

Publications (2)

Publication Number Publication Date
CN108231569A CN108231569A (zh) 2018-06-29
CN108231569B true CN108231569B (zh) 2023-01-10

Family

ID=62489673

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711225182.2A Active CN108231569B (zh) 2016-12-14 2017-11-29 中介层的制造方法

Country Status (5)

Country Link
US (1) US10115644B2 (zh)
JP (1) JP6779574B2 (zh)
KR (1) KR102340168B1 (zh)
CN (1) CN108231569B (zh)
TW (1) TWI719266B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10962571B2 (en) * 2017-12-30 2021-03-30 Texas Instruments Incorporated Interposers having cuts through an insulating substrate
JP7098242B2 (ja) * 2018-09-12 2022-07-11 株式会社ディスコ 収容容器の製造方法及び収容方法
JP7395898B2 (ja) 2019-09-18 2023-12-12 大日本印刷株式会社 半導体多面付け基板用部材、半導体多面付け基板、および半導体部材
DE102019220524A1 (de) * 2019-12-23 2021-06-24 Tesa Se Verfahren zum Schneiden von Polymer-Dünnglas-Laminat
WO2024091582A1 (en) * 2022-10-28 2024-05-02 Applied Materials, Inc. Slitting method and hardware for coated flexible substrates

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0505130A2 (en) * 1991-03-18 1992-09-23 Hughes Aircraft Company Thinned charge-coupled devices and method for making the same
JP2009076950A (ja) * 2009-01-15 2009-04-09 Renesas Technology Corp 半導体装置の製造方法
JP2012114322A (ja) * 2010-11-26 2012-06-14 Shinko Electric Ind Co Ltd 半導体ウエハの分割方法
CN105047612A (zh) * 2014-04-17 2015-11-11 株式会社迪思科 晶片的加工方法
JP2015207580A (ja) * 2014-04-17 2015-11-19 凸版印刷株式会社 配線基板およびその製造方法
JP2016039345A (ja) * 2014-08-11 2016-03-22 株式会社ディスコ ウエーハの加工方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6617681B1 (en) 1999-06-28 2003-09-09 Intel Corporation Interposer and method of making same
JP4377300B2 (ja) * 2004-06-22 2009-12-02 Necエレクトロニクス株式会社 半導体ウエハおよび半導体装置の製造方法
JP4571850B2 (ja) * 2004-11-12 2010-10-27 東京応化工業株式会社 レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法
US7265034B2 (en) 2005-02-18 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of cutting integrated circuit chips from wafer by ablating with laser and cutting with saw blade
JP5352624B2 (ja) 2005-11-10 2013-11-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007173475A (ja) * 2005-12-21 2007-07-05 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2007194469A (ja) * 2006-01-20 2007-08-02 Renesas Technology Corp 半導体装置の製造方法
JP4193897B2 (ja) * 2006-05-19 2008-12-10 カシオ計算機株式会社 半導体装置およびその製造方法
US8154153B2 (en) * 2007-01-25 2012-04-10 Systems General Corp. Method and apparatus for providing a communication channel through an output cable of a power supply
US8629532B2 (en) 2007-05-08 2014-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with assisting dicing structure and dicing method thereof
JP2011187659A (ja) * 2010-03-08 2011-09-22 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US8652941B2 (en) * 2011-12-08 2014-02-18 International Business Machines Corporation Wafer dicing employing edge region underfill removal
JP6170769B2 (ja) * 2013-07-11 2017-07-26 株式会社ディスコ ウェーハの加工方法
JP6246534B2 (ja) * 2013-09-11 2017-12-13 株式会社ディスコ ウエーハの加工方法
JP2015092525A (ja) * 2013-11-08 2015-05-14 株式会社ディスコ ウエーハの加工方法
JP2015198212A (ja) 2014-04-03 2015-11-09 凸版印刷株式会社 ガラスインターポーザ
JP2015231004A (ja) * 2014-06-06 2015-12-21 日本特殊陶業株式会社 配線基板
JP6282194B2 (ja) * 2014-07-30 2018-02-21 株式会社ディスコ ウェーハの加工方法
JP6430836B2 (ja) * 2015-01-16 2018-11-28 株式会社ディスコ ウエーハの加工方法
DE102015002542B4 (de) * 2015-02-27 2023-07-20 Disco Corporation Waferteilungsverfahren
JP6805511B2 (ja) * 2016-03-14 2020-12-23 凸版印刷株式会社 配線基板、およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0505130A2 (en) * 1991-03-18 1992-09-23 Hughes Aircraft Company Thinned charge-coupled devices and method for making the same
JP2009076950A (ja) * 2009-01-15 2009-04-09 Renesas Technology Corp 半導体装置の製造方法
JP2012114322A (ja) * 2010-11-26 2012-06-14 Shinko Electric Ind Co Ltd 半導体ウエハの分割方法
CN105047612A (zh) * 2014-04-17 2015-11-11 株式会社迪思科 晶片的加工方法
JP2015207580A (ja) * 2014-04-17 2015-11-19 凸版印刷株式会社 配線基板およびその製造方法
JP2016039345A (ja) * 2014-08-11 2016-03-22 株式会社ディスコ ウエーハの加工方法

Also Published As

Publication number Publication date
US10115644B2 (en) 2018-10-30
KR102340168B1 (ko) 2021-12-15
TW201822307A (zh) 2018-06-16
TWI719266B (zh) 2021-02-21
JP2018098378A (ja) 2018-06-21
CN108231569A (zh) 2018-06-29
US20180166355A1 (en) 2018-06-14
KR20180068871A (ko) 2018-06-22
JP6779574B2 (ja) 2020-11-04

Similar Documents

Publication Publication Date Title
CN108231569B (zh) 中介层的制造方法
TWI756437B (zh) 玻璃中介層之製造方法
CN105047612B (zh) 晶片的加工方法
JP3795040B2 (ja) 半導体装置の製造方法
CN110828296A (zh) 用于半导体晶片的边缘修整的方法及相关设备
JP6385727B2 (ja) 貼り合わせウェーハ形成方法
KR102642496B1 (ko) 적층형 소자의 제조 방법
JP6808282B2 (ja) インターポーザの製造方法
JP2006261447A (ja) 半導体装置、及び、半導体装置の製造方法
JP2011151090A (ja) 切削方法
KR102596148B1 (ko) 적층형 소자의 제조 방법
JP6925902B2 (ja) 積層型素子の製造方法
US20240112970A1 (en) Singulation of integrated circuit package substrates with glass cores
US20240112971A1 (en) Singulation of integrated circuit package substrates with glass cores
JP6938091B2 (ja) 被加工物の加工方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant