JP2018098378A - インターポーザの製造方法 - Google Patents
インターポーザの製造方法 Download PDFInfo
- Publication number
- JP2018098378A JP2018098378A JP2016242235A JP2016242235A JP2018098378A JP 2018098378 A JP2018098378 A JP 2018098378A JP 2016242235 A JP2016242235 A JP 2016242235A JP 2016242235 A JP2016242235 A JP 2016242235A JP 2018098378 A JP2018098378 A JP 2018098378A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- interposer
- cutting blade
- cutting
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000005520 cutting process Methods 0.000 claims abstract description 116
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 239000011521 glass Substances 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims description 25
- 239000006061 abrasive grain Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001351 cycling effect Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
- B24B19/02—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
- B28D1/24—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising with cutting discs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0094—Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10378—Interposers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mining & Mineral Resources (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Laser Beam Processing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Dicing (AREA)
Abstract
Description
3 インターポーザ
11 ガラス基板
11a 第1面(表面)
11b 第2面(裏面)
11c 貫通孔
13 分割予定ライン(ストリート)
15 積層体
15a 露出した面
15b 切削溝
15c レーザー加工溝
17 配線層
19 絶縁層
21 電極
2 切削ブレード(第1の切削ブレード)
4 切削ブレード(第2の切削ブレード)
6 レーザー照射ユニット
8 切削ブレード
L レーザービーム
Claims (3)
- 格子状に設定された複数の分割予定ラインによって複数の領域に区画されるガラス基板と、該ガラス基板の第1面又は該第1面とは反対側の第2面に積層され絶縁層と配線層とを含む積層体と、を備える材料基板から複数のインターポーザを製造するインターポーザの製造方法であって、
該分割予定ラインに沿って該積層体の露出した面に第1の切削ブレードを切り込ませ、該ガラス基板に達しない深さの切削溝を該積層体に形成する切削溝形成工程と、
該切削溝よりも幅の狭い第2の切削ブレードを該切削溝に沿って該ガラス基板に切り込ませ、該ガラス基板を分割して複数のインターポーザを製造する分割工程と、を含むことを特徴とするインターポーザの製造方法。 - 前記第2の切削ブレードに含まれる砥粒の粒径は、前記第1の切削ブレードに含まれる砥粒の粒径よりも小さいことを特徴とする請求項1に記載のインターポーザの製造方法。
- 格子状に設定された複数の分割予定ラインによって複数の領域に区画されたガラス基板と、該ガラス基板の第1面又は該第1面とは反対側の第2面に積層され絶縁層と配線層とを含む積層体と、を備える材料基板から複数のインターポーザを製造するインターポーザの製造方法であって、
該積層体に対して吸収性を有する波長のレーザービームを該分割予定ラインに沿って該積層体の露出した面に照射し、該ガラス基板に達しない深さのレーザー加工溝を該積層体に形成するレーザー加工溝形成工程と、
該レーザー加工溝よりも幅の狭い切削ブレードを該レーザー加工溝に沿って該ガラス基板に切り込ませ、該ガラス基板を分割して複数のインターポーザを製造する分割工程と、を含むことを特徴とするインターポーザの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016242235A JP6779574B2 (ja) | 2016-12-14 | 2016-12-14 | インターポーザの製造方法 |
TW106138541A TWI719266B (zh) | 2016-12-14 | 2017-11-08 | 中介載板的製造方法 |
CN201711225182.2A CN108231569B (zh) | 2016-12-14 | 2017-11-29 | 中介层的制造方法 |
KR1020170170314A KR102340168B1 (ko) | 2016-12-14 | 2017-12-12 | 인터포저의 제조 방법 |
US15/841,032 US10115644B2 (en) | 2016-12-14 | 2017-12-13 | Interposer manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016242235A JP6779574B2 (ja) | 2016-12-14 | 2016-12-14 | インターポーザの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018098378A true JP2018098378A (ja) | 2018-06-21 |
JP6779574B2 JP6779574B2 (ja) | 2020-11-04 |
Family
ID=62489673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016242235A Active JP6779574B2 (ja) | 2016-12-14 | 2016-12-14 | インターポーザの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10115644B2 (ja) |
JP (1) | JP6779574B2 (ja) |
KR (1) | KR102340168B1 (ja) |
CN (1) | CN108231569B (ja) |
TW (1) | TWI719266B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020043246A (ja) * | 2018-09-12 | 2020-03-19 | 株式会社ディスコ | 収容容器の製造方法及び収容方法 |
JP7395898B2 (ja) | 2019-09-18 | 2023-12-12 | 大日本印刷株式会社 | 半導体多面付け基板用部材、半導体多面付け基板、および半導体部材 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10962571B2 (en) * | 2017-12-30 | 2021-03-30 | Texas Instruments Incorporated | Interposers having cuts through an insulating substrate |
DE102019220524A1 (de) * | 2019-12-23 | 2021-06-24 | Tesa Se | Verfahren zum Schneiden von Polymer-Dünnglas-Laminat |
WO2024091582A1 (en) * | 2022-10-28 | 2024-05-02 | Applied Materials, Inc. | Slitting method and hardware for coated flexible substrates |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006041449A (ja) * | 2004-06-22 | 2006-02-09 | Nec Electronics Corp | 半導体ウエハおよび半導体装置の製造方法 |
JP2009076950A (ja) * | 2009-01-15 | 2009-04-09 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2015092525A (ja) * | 2013-11-08 | 2015-05-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP2015231004A (ja) * | 2014-06-06 | 2015-12-21 | 日本特殊陶業株式会社 | 配線基板 |
JP2017168493A (ja) * | 2016-03-14 | 2017-09-21 | 凸版印刷株式会社 | 配線基板、およびその製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5162251A (en) * | 1991-03-18 | 1992-11-10 | Hughes Danbury Optical Systems, Inc. | Method for making thinned charge-coupled devices |
US6617681B1 (en) | 1999-06-28 | 2003-09-09 | Intel Corporation | Interposer and method of making same |
JP4571850B2 (ja) * | 2004-11-12 | 2010-10-27 | 東京応化工業株式会社 | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
US7265034B2 (en) | 2005-02-18 | 2007-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of cutting integrated circuit chips from wafer by ablating with laser and cutting with saw blade |
JP5352624B2 (ja) | 2005-11-10 | 2013-11-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2007173475A (ja) * | 2005-12-21 | 2007-07-05 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2007194469A (ja) * | 2006-01-20 | 2007-08-02 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4193897B2 (ja) * | 2006-05-19 | 2008-12-10 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
US8154153B2 (en) * | 2007-01-25 | 2012-04-10 | Systems General Corp. | Method and apparatus for providing a communication channel through an output cable of a power supply |
US8629532B2 (en) | 2007-05-08 | 2014-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer with assisting dicing structure and dicing method thereof |
JP2011187659A (ja) * | 2010-03-08 | 2011-09-22 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP5608521B2 (ja) * | 2010-11-26 | 2014-10-15 | 新光電気工業株式会社 | 半導体ウエハの分割方法と半導体チップ及び半導体装置 |
US8652941B2 (en) * | 2011-12-08 | 2014-02-18 | International Business Machines Corporation | Wafer dicing employing edge region underfill removal |
JP6170769B2 (ja) * | 2013-07-11 | 2017-07-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP6246534B2 (ja) * | 2013-09-11 | 2017-12-13 | 株式会社ディスコ | ウエーハの加工方法 |
JP2015198212A (ja) | 2014-04-03 | 2015-11-09 | 凸版印刷株式会社 | ガラスインターポーザ |
JP2015207604A (ja) * | 2014-04-17 | 2015-11-19 | 株式会社ディスコ | ウェーハの加工方法 |
JP2015207580A (ja) * | 2014-04-17 | 2015-11-19 | 凸版印刷株式会社 | 配線基板およびその製造方法 |
JP6282194B2 (ja) * | 2014-07-30 | 2018-02-21 | 株式会社ディスコ | ウェーハの加工方法 |
JP6305867B2 (ja) * | 2014-08-11 | 2018-04-04 | 株式会社ディスコ | ウエーハの加工方法 |
JP6430836B2 (ja) * | 2015-01-16 | 2018-11-28 | 株式会社ディスコ | ウエーハの加工方法 |
DE102015002542B4 (de) * | 2015-02-27 | 2023-07-20 | Disco Corporation | Waferteilungsverfahren |
-
2016
- 2016-12-14 JP JP2016242235A patent/JP6779574B2/ja active Active
-
2017
- 2017-11-08 TW TW106138541A patent/TWI719266B/zh active
- 2017-11-29 CN CN201711225182.2A patent/CN108231569B/zh active Active
- 2017-12-12 KR KR1020170170314A patent/KR102340168B1/ko active IP Right Grant
- 2017-12-13 US US15/841,032 patent/US10115644B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006041449A (ja) * | 2004-06-22 | 2006-02-09 | Nec Electronics Corp | 半導体ウエハおよび半導体装置の製造方法 |
JP2009076950A (ja) * | 2009-01-15 | 2009-04-09 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2015092525A (ja) * | 2013-11-08 | 2015-05-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP2015231004A (ja) * | 2014-06-06 | 2015-12-21 | 日本特殊陶業株式会社 | 配線基板 |
JP2017168493A (ja) * | 2016-03-14 | 2017-09-21 | 凸版印刷株式会社 | 配線基板、およびその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020043246A (ja) * | 2018-09-12 | 2020-03-19 | 株式会社ディスコ | 収容容器の製造方法及び収容方法 |
JP7098242B2 (ja) | 2018-09-12 | 2022-07-11 | 株式会社ディスコ | 収容容器の製造方法及び収容方法 |
JP7395898B2 (ja) | 2019-09-18 | 2023-12-12 | 大日本印刷株式会社 | 半導体多面付け基板用部材、半導体多面付け基板、および半導体部材 |
Also Published As
Publication number | Publication date |
---|---|
US10115644B2 (en) | 2018-10-30 |
KR102340168B1 (ko) | 2021-12-15 |
TW201822307A (zh) | 2018-06-16 |
TWI719266B (zh) | 2021-02-21 |
CN108231569B (zh) | 2023-01-10 |
CN108231569A (zh) | 2018-06-29 |
US20180166355A1 (en) | 2018-06-14 |
KR20180068871A (ko) | 2018-06-22 |
JP6779574B2 (ja) | 2020-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102340168B1 (ko) | 인터포저의 제조 방법 | |
TWI756437B (zh) | 玻璃中介層之製造方法 | |
CN105047612B (zh) | 晶片的加工方法 | |
JP6391999B2 (ja) | 積層デバイスの製造方法 | |
JP3795040B2 (ja) | 半導体装置の製造方法 | |
JP6385727B2 (ja) | 貼り合わせウェーハ形成方法 | |
JP6341554B2 (ja) | 半導体装置の製造方法 | |
JP6808282B2 (ja) | インターポーザの製造方法 | |
JP2006261447A (ja) | 半導体装置、及び、半導体装置の製造方法 | |
JP6981800B2 (ja) | 積層型素子の製造方法 | |
JP2019057579A (ja) | 半導体装置およびその製造方法 | |
JP6298720B2 (ja) | 積層デバイスの製造方法 | |
KR102596148B1 (ko) | 적층형 소자의 제조 방법 | |
US20160050761A1 (en) | Substrate structure and method of manuifacturing the same | |
JP6318016B2 (ja) | 積層デバイスの製造方法 | |
TW201921452A (zh) | 層積型元件之製造方法 | |
JP7223828B2 (ja) | 積層型素子の製造方法 | |
JP7233225B2 (ja) | ウェーハの割段方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191018 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200806 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200811 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200925 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201013 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201013 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6779574 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |