CN109516453B - 石墨烯结构体的形成方法和形成装置 - Google Patents

石墨烯结构体的形成方法和形成装置

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Publication number
CN109516453B
CN109516453B CN201811099667.6A CN201811099667A CN109516453B CN 109516453 B CN109516453 B CN 109516453B CN 201811099667 A CN201811099667 A CN 201811099667A CN 109516453 B CN109516453 B CN 109516453B
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gas
substrate
processed
microwave
forming
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CN109516453A (zh
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井福亮太
松本贵士
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201811099667.6A 2017-09-20 2018-09-20 石墨烯结构体的形成方法和形成装置 Active CN109516453B (zh)

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JP5851804B2 (ja) * 2011-11-09 2016-02-03 東京エレクトロン株式会社 前処理方法、グラフェンの形成方法及びグラフェン製造装置
JP6960813B2 (ja) 2017-09-20 2021-11-05 東京エレクトロン株式会社 グラフェン構造体の形成方法および形成装置
KR102592698B1 (ko) * 2017-11-29 2023-10-24 삼성전자주식회사 나노결정질 그래핀 및 나노결정질 그래핀의 형성방법
US11289331B2 (en) * 2018-09-27 2022-03-29 Applied Materials, Inc. Methods for graphene formation using microwave surface-wave plasma on dielectric materials
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