CN108893726B - Pecvd微晶硅锗(sige) - Google Patents

Pecvd微晶硅锗(sige) Download PDF

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CN108893726B
CN108893726B CN201810623048.6A CN201810623048A CN108893726B CN 108893726 B CN108893726 B CN 108893726B CN 201810623048 A CN201810623048 A CN 201810623048A CN 108893726 B CN108893726 B CN 108893726B
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pecvd
containing gas
silicon germanium
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池孝仁
法扎德·迪安·塔吉克
迈克尔·安东尼·罗莎
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Abstract

本发明的实施方式大体涉及用于形成SiGe层的方法。在一个实施方式中，首先使用等离子体增强化学气相沉积(PECVD)形成种晶SiGe层，并且也使用PECVD在PECVD种晶层上直接形成主体SiGe层。用于种晶SiGe层和主体SiGe层二者的处理温度低于450摄氏度。

Description

PECVD微晶硅锗(SIGE)
本申请是申请日为2014年8月15日申请的申请号为201480046949.3，并且发明名称为“PECVD微晶硅锗(SIGE)”的发明专利申请的分案申请。
技术领域
本发明的实施方式大体涉及用于形成硅锗(SiGe)层的方法。
背景技术
微机电系统(MEMS)已被用于各种系统，诸如加速度计、陀螺仪、红外线检测器、微型涡轮、硅时钟(silicon clock)和类似系统。在诸如检测器和显示器之类的某些应用中，MEMS和互补金属-氧化物半导体(CMOS)处理的单片集成(monolithic integration)是理想的方案，因为这样的集成简化了互连问题。对于单片集成的一个简单方式为在驱动电子器件(driving electronics)的顶部上对MEMS进行后处理，这是因为不会改变用于制备驱动电子器件的标准制造工艺。然而，后处理会对MEMS的制造温度施加上限，以避免使驱动电子器件的性能损坏或劣化。
SiGe已被提出作为MEMS的结构材料，能在标准CMOS驱动和控制电子器件的顶部上对SiGe进行后处理。用于微结构装置的功能性SiGe层可超过2微米厚，且可通过在450摄氏度下沉积多重SiGe层来形成功能性SiGe层。因此，需要用于形成SiGe层的改良方法。
发明内容
本发明的实施方式大体涉及用于形成SiGe层的方法。在一个实施方式中，首先使用等离子体增强化学气相沉积(PECVD)形成种晶SiGe层，并且也使用PECVD在所述PECVD种晶层上直接形成主体SiGe层(bulk SiGe layer)。用于种晶SiGe层和主体SiGe层二者的处理温度低于450摄氏度。
在一个实施方式中，披露用于形成硅锗层的方法。所述方法包括下列步骤：使用等离子体增强化学气相沉积(PECVD)在基板之上沉积种晶硅锗层，其中在处理期间，基板具有低于450摄氏度的第一温度。所述方法进一步包括下列步骤：使用PECVD在种晶硅锗层上直接沉积主体硅锗层，其中在处理期间，基板具有低于450摄氏度的第二温度。
附图说明
可通过参照实施方式(一些实施方式图示于附图中)来详细理解本发明的上述特征以及以上简要概述的有关本发明的更具体的描述。然而应注意，这些附图仅示出本发明的典型实施方式，因而不应被视为对本发明范围的限制，因为本发明可允许其它等效的实施方式。
图1示出根据本发明的一个实施方式的具有种晶SiGe层和主体SiGe层的SiGe层。
图2示出根据本发明的一个实施方式的形成种晶SiGe层和主体SiGe层的工艺步骤。
图3示出根据本发明的一个实施方式的可用来执行图2的工艺步骤的PECVD腔室。
为了便于理解，已尽可能地使用相同的参考标记来标示各图共有的相同元件。预期一个实施方式中所披露的元件可有利地并入其它实施方式中，而无需具体详述。
具体实施方式
本发明的实施方式大体涉及用于形成SiGe层的方法。在一个实施方式中，首先使用等离子体增强化学气相沉积(PECVD)在基板表面上形成种晶SiGe层，并且也使用PECVD在PECVD种晶层上直接形成主体SiGe层。用于种晶SiGe层和主体SiGe层二者的处理温度低于450摄氏度。
图1示出根据本发明的一个实施方式的具有种晶SiGe层102和主体SiGe层104的SiGe层100。SiGe层100可形成于CMOS结构上。图2描述形成种晶SiGe层102和主体SiGe层104的工艺步骤。
图2示出用于形成SiGe层100的工艺步骤200。于方块202处，使用PECVD沉积种晶SiGe层102。可将种晶SiGe层102沉积于CMOS结构上。由于CMOS结构可能无法承受升高的温度，因此种晶SiGe层102和主体SiGe层104二者的沉积皆在450摄氏度以下的温度进行(诸如在420摄氏度进行)。
在一个实施方式中，可于PECVD腔室(诸如图3中所示的PECVD腔室300)中沉积种晶SiGe层102。在方块202中所执行的工艺的一个实例中，可在将具有CMOS结构的基板维持在低于450摄氏度的温度(诸如在420摄氏度)的同时，使用范围在约300W至约600W的RF功率在13.56MHz的RF频率下形成等离子体。可调整RF功率以微调膜应力。可将处理区域中的处理压力维持在介于约3Torr与约4.2Torr之间。等离子体含有处理气体混合物，处理气体混合物包括含硅气体、含锗气体、含硼气体和氢气。在一个实施方式中，可在气缸(gascylinder)中使含锗气体和含硼气体与氢气预先混合。在一个实施方式中，含硅气体为硅烷(SiH4)，含锗气体为锗烷(GeH4)，且含硼气体为二硼烷(B2H6)。在一个实施方式中，SiH4气体具有介于约0.064sccm/cm2与约0.085sccm/cm2之间的流量(flow rate)，GeH4气体具有介于约0.354sccm/cm2与约0.476sccm/cm2之间的流量，氢气具有介于约5.941sccm/cm2与约7.779sccm/cm2之间的流量，且B2H6气体具有介于约0.064sccm/cm2与约0.085sccm/cm2之间的流量。流量是根据每平方厘米的基板或多个基板的表面积，因此容易确定用于任何尺寸基板的总流量。沉积工艺可持续介于约50秒与约140秒之间，形成具有介于约0.1微米与约0.25微米之间的厚度的种晶SiGe层102。
下一步，在方块204处，使用PECVD于种晶SiGe层102上直接沉积主体SiGe层104。当种晶SiGe层102的清洁或蚀刻不是必需的或能在相同的PECVD腔室中进行时，可在与沉积种晶SiGe层102相同的PECVD腔室中沉积主体SiGe层104。在方块204中所执行的工艺的一个实例中，可在将具有CMOS结构和种晶SiGe层的基板维持在低于450摄氏度的温度(诸如在420摄氏度)的同时，使用介于约600W与约800W之间的RF功率在13.56MHz的RF频率下形成等离子体。可将处理区域中的处理压力维持在介于约3Torr与约4.2Torr之间。等离子体含有处理气体混合物，处理气体混合物包括含硅气体、含锗气体、含硼气体和氢气。在一个实施方式中，可在气缸中使含锗气体和含硼气体与氢气预先混合。在一个实施方式中，含硅气体为硅烷(SiH4)，含锗气体为锗烷(GeH4)，且含硼气体为二硼烷(B2H6)。在一个实施方式中，SiH4气体具有介于约0.141sccm/cm2与约0.282sccm/cm2之间的流量，GeH4气体具有介于约1.160sccm/cm2与约1.414sccm/cm2之间的流量，氢气具有介于约6.365sccm/cm2与约7.779sccm/cm2之间的流量，且B2H6气体具有介于约0.113sccm/cm2与约0.212sccm/cm2之间的流量。沉积工艺可持续介于约400秒与约1000秒之间，形成具有范围从约2.5微米至超过10微米的厚度的主体SiGe层104。在一个实施方式中，主体SiGe层104具有大于或等于约10微米的厚度。使用PECVD在单一沉积工艺中沉积这样厚的主体SiGe层104。
图3为根据本发明的一个实施方式，可用来执行图2的工艺步骤的PECVD处理腔室300。处理腔室300包括界定处理容积312的壁306、底部308和盖体(lid)310。壁306和底部308可典型地由单一的(unitary)铝块制成。壁306中可具有管道(未示出)，流体可通过管道以控制壁306的温度。处理腔室300也可包括泵送环314，泵送环可将处理容积312耦接至排放口316，也可将处理容积312耦接至其它泵送部件(未示出)。
可被加热的基板支撑组件338可以居中的方式被设置于处理腔室300内。基板支撑组件338在沉积工艺期间支撑基板303。一般而言，基板支撑组件338由铝、陶瓷或铝与陶瓷的组合物制成，且典型地包括真空口(未示出)和至少一个或更多个加热元件332。
可利用真空口在基板303与基板支撑组件338之间施加真空，以在沉积工艺期间将基板303固定至基板支撑组件338。一个或更多个加热元件332例如可为设置于基板支撑组件338中并耦接至功率源330的电极，以将基板支撑组件338和位于基板支撑组件338上的基板303加热至预定温度。
一般而言，基板支撑组件338耦接至杆(stem)342。杆342提供管道供基板支撑组件338与处理腔室300的其它部件之间的电气引线、真空和气体供应管线所用。此外，杆342将基板支撑组件338耦接至升降系统344，升降系统344在升高位置(如图2所示)与下降位置(未示出)之间移动基板支撑组件338。波纹管(bellow)346在处理容积312与腔室300外部的气氛之间提供真空密封，同时促进基板支撑组件338的移动。
基板支撑组件338额外地支撑外围的遮蔽环348。遮蔽环348的外型为环状，且典型地包含陶瓷材料，诸如，举例而言，氮化铝。一般而言，遮蔽环348防止基板303边缘处和基板支撑组件338边缘处的沉积。
盖体310由壁306支撑，且盖体310可以为可移动的，以允许对处理腔室300的维修。盖体310通常可由铝构成，且可额外具有传热流体沟道324形成于盖体310中。传热流体沟道324耦接至流体源(未示出)，使传热流体流经盖体310。流经传热流体沟道324的流体可调控盖体310的温度。
一般可将喷头(showerhead)318耦接至盖体310的内侧320。可视情况将穿孔的(perforated)阻挡板336设置于喷头318与盖体310之间的空间322中。经过混合区块(mixing block)进入处理腔室300的气体(即，处理气体和其它气体)首先由阻挡板336扩散，以至于气体填充喷头318后的空间322。气体接着穿过喷头318并进入处理腔室300。阻挡板336和喷头318被配置成将均匀的气流提供至处理腔室300。均匀的气流是理想的，以促进基板303上的均匀的层形成。在种晶SiGe层102的沉积工艺期间，基板303与喷头318之间的距离介于约320mm与约370mm之间。在主体SiGe层104的沉积工艺期间，基板303与喷头318之间的距离介于约530mm与约580mm之间。
气源360耦接至盖体310，以提供气体经由喷头318中的气体通道，到达喷头318与基板303之间的处理区域。可将真空泵(未示出)耦接至处理腔室300，以将处理容积控制在期望的压力。RF源370通过匹配网络390耦接至盖体310和/或耦接至喷头318，以将RF电流提供至喷头318。RF电流在喷头318与基板支撑组件338之间产生电场，使得可在喷头318与基板支撑组件338之间由气体产生等离子体。可调整RF功率，以微调SiGe层100的应力。
综上所述，已披露用于形成SiGe层的方法。所述方法包括形成种晶SiGe层，并在种晶SiGe层上直接形成主体SiGe层，且使用PECVD形成种晶SiGe层和主体SiGe层二者。种晶SiGe层可形成于CMOS结构的顶部上，并且为了防止损坏CMOS结构，在种晶层和主体层二者的沉积期间，基板(在其上沉积有种晶层和主体层)具有低于450摄氏度(诸如420摄氏度)的温度。主体SiGe层可超过10微米，且可在单一沉积中使用PECVD形成主体SiGe层。
尽管以上内容是针对本发明的实施方式，然而在不背离本发明的基本范围的情况下，可设计出本发明的其它和进一步的实施方式，且本发明的范围由后附要求保护的范围确定。

Claims (18)

1.一种用于形成硅锗层的方法，所述方法包括下列步骤：
使用等离子体增强化学气相沉积(PECVD)在基板之上沉积种晶硅锗层，其中用于沉积所述种晶硅锗层的所述PECVD具有介于300W与600W之间的RF功率；和
使用PECVD在所述种晶硅锗层上直接沉积主体硅锗层，其中用于沉积所述主体硅锗层的所述PECVD具有介于600W与800W之间的RF功率。
2.如权利要求1所述的方法，其中所述基板包括互补金属-氧化物半导体(CMOS)结构，且所述种晶硅锗层沉积于所述CMOS结构之上。
3.如权利要求1所述的方法，其中用于沉积所述种晶硅锗层的所述PECVD具有介于3Torr与4.2Torr之间的处理压力。
4.如权利要求1所述的方法，其中用于沉积所述主体硅锗层的所述PECVD具有介于3Torr与4.2Torr之间的处理压力。
5.如权利要求1所述的方法，进一步包括下列步骤：在所述种晶硅锗层的沉积期间流入气体混合物，其中所述气体混合物包括含硅气体、含锗气体、含硼气体和氢气。
6.如权利要求5所述的方法，其中所述含硅气体为硅烷。
7.如权利要求5所述的方法，其中所述含锗气体为锗烷。
8.如权利要求5所述的方法，其中所述含硼气体为二硼烷。
9.如权利要求5所述的方法，其中所述含硅气体具有介于0.064sccm/cm2与0.085sccm/cm2之间的流量。
10.如权利要求5所述的方法，其中所述含锗气体具有介于0.354sccm/cm2与0.476sccm/cm2之间的流量。
11.如权利要求5所述的方法，其中所述含硼气体具有介于0.064sccm/cm2与0.085sccm/cm2之间的流量。
12.如权利要求5所述的方法，其中所述氢气具有介于5.941sccm/cm2与7.779sccm/cm2之间的流量。
13.一种用于形成硅锗层的方法，所述方法包括下列步骤：
使用等离子体增强化学气相沉积(PECVD)于基板之上沉积种晶硅锗层，其中用于沉积所述种晶硅锗层的所述PECVD具有介于300W与600W之间的RF功率；和
使用PECVD在所述种晶硅锗层上直接沉积主体硅锗层，其中在所述主体硅锗层的沉积期间引入气体混合物，且其中所述气体混合物包括含硅气体、含锗气体、含硼气体和氢气，并且其中用于沉积所述主体硅锗层的所述PECVD具有介于600W与800W之间的RF功率。
14.如权利要求13所述的方法，其中所述含硅气体具有介于0.141sccm/cm2与0.282sccm/cm2之间的流量。
15.如权利要求13所述的方法，其中所述含锗气体具有介于1.160sccm/cm2与1.414sccm/cm2之间的流量。
16.如权利要求13所述的方法，其中所述含硼气体具有介于0.113sccm/cm2与0.212sccm/cm2之间的流量。
17.如权利要求13所述的方法，其中所述氢气具有介于6.365sccm/cm2与7.779sccm/cm2之间的流量。
18.如权利要求13所述的方法，其中所述含硅气体为硅烷。
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