CN108682737A - 蚀刻非挥发性金属材料的方法 - Google Patents
蚀刻非挥发性金属材料的方法 Download PDFInfo
- Publication number
- CN108682737A CN108682737A CN201810360987.6A CN201810360987A CN108682737A CN 108682737 A CN108682737 A CN 108682737A CN 201810360987 A CN201810360987 A CN 201810360987A CN 108682737 A CN108682737 A CN 108682737A
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- China
- Prior art keywords
- metal
- metallic compound
- etching
- layer
- implement
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005530 etching Methods 0.000 title claims abstract description 28
- 239000007769 metal material Substances 0.000 title abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 86
- 239000002184 metal Substances 0.000 claims abstract description 86
- 238000003795 desorption Methods 0.000 claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 16
- 150000005309 metal halides Chemical group 0.000 claims abstract description 16
- 239000002904 solvent Substances 0.000 claims abstract description 16
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract description 15
- 238000007614 solvation Methods 0.000 claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 14
- 150000004706 metal oxides Chemical group 0.000 claims abstract description 14
- 239000013078 crystal Chemical group 0.000 claims abstract description 10
- 239000013110 organic ligand Substances 0.000 claims abstract description 9
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 150000004820 halides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 77
- 239000003446 ligand Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 13
- 238000004891 communication Methods 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 239000006200 vaporizer Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000000935 solvent evaporation Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910018936 CoPd Inorganic materials 0.000 description 3
- 229910018979 CoPt Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910006124 SOCl2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- -1 amidine salt Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- OQCGPOBCYAOYSD-UHFFFAOYSA-N cobalt palladium Chemical compound [Co].[Co].[Co].[Pd].[Pd] OQCGPOBCYAOYSD-UHFFFAOYSA-N 0.000 description 1
- AVMBSRQXOWNFTR-UHFFFAOYSA-N cobalt platinum Chemical compound [Pt][Co][Pt] AVMBSRQXOWNFTR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000003694 hair properties Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461971032P | 2014-03-27 | 2014-03-27 | |
| US61/971,032 | 2014-03-27 | ||
| US14/325,911 | 2014-07-08 | ||
| US14/325,911 US9130158B1 (en) | 2014-03-27 | 2014-07-08 | Method to etch non-volatile metal materials |
| CN201510140906.8A CN104953027B (zh) | 2014-03-27 | 2015-03-27 | 蚀刻非挥发性金属材料的方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510140906.8A Division CN104953027B (zh) | 2014-03-27 | 2015-03-27 | 蚀刻非挥发性金属材料的方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108682737A true CN108682737A (zh) | 2018-10-19 |
Family
ID=54012662
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810360987.6A Pending CN108682737A (zh) | 2014-03-27 | 2015-03-27 | 蚀刻非挥发性金属材料的方法 |
| CN201510140906.8A Active CN104953027B (zh) | 2014-03-27 | 2015-03-27 | 蚀刻非挥发性金属材料的方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510140906.8A Active CN104953027B (zh) | 2014-03-27 | 2015-03-27 | 蚀刻非挥发性金属材料的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9257638B2 (enExample) |
| JP (2) | JP6789614B2 (enExample) |
| KR (2) | KR102377668B1 (enExample) |
| CN (2) | CN108682737A (enExample) |
| SG (2) | SG10201502438RA (enExample) |
| TW (2) | TWI651773B (enExample) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US9240547B2 (en) | 2013-09-10 | 2016-01-19 | Micron Technology, Inc. | Magnetic tunnel junctions and methods of forming magnetic tunnel junctions |
| US9257638B2 (en) * | 2014-03-27 | 2016-02-09 | Lam Research Corporation | Method to etch non-volatile metal materials |
| US9373779B1 (en) | 2014-12-08 | 2016-06-21 | Micron Technology, Inc. | Magnetic tunnel junctions |
| US9576811B2 (en) | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US9502642B2 (en) | 2015-04-10 | 2016-11-22 | Micron Technology, Inc. | Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions |
| US9530959B2 (en) * | 2015-04-15 | 2016-12-27 | Micron Technology, Inc. | Magnetic tunnel junctions |
| US9520553B2 (en) * | 2015-04-15 | 2016-12-13 | Micron Technology, Inc. | Methods of forming a magnetic electrode of a magnetic tunnel junction and methods of forming a magnetic tunnel junction |
| US9806252B2 (en) | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
| US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
| US9257136B1 (en) | 2015-05-05 | 2016-02-09 | Micron Technology, Inc. | Magnetic tunnel junctions |
| US9960346B2 (en) | 2015-05-07 | 2018-05-01 | Micron Technology, Inc. | Magnetic tunnel junctions |
| US9449843B1 (en) * | 2015-06-09 | 2016-09-20 | Applied Materials, Inc. | Selectively etching metals and metal nitrides conformally |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
| US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
| CN106548936B (zh) * | 2015-09-23 | 2022-04-22 | 北京北方华创微电子装备有限公司 | 一种金属层的刻蚀方法 |
| JP6960400B2 (ja) | 2015-11-10 | 2021-11-05 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | エッチング反応物質、およびそれを使用するプラズマフリーの酸化物エッチング方法 |
| US10157742B2 (en) * | 2015-12-31 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for mandrel and spacer patterning |
| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
| US10229837B2 (en) | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| US9953843B2 (en) * | 2016-02-05 | 2018-04-24 | Lam Research Corporation | Chamber for patterning non-volatile metals |
| US10256108B2 (en) * | 2016-03-01 | 2019-04-09 | Lam Research Corporation | Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments |
| US10230042B2 (en) | 2016-03-03 | 2019-03-12 | Toshiba Memory Corporation | Magnetoresistive element and method of manufacturing the same |
| US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
| US9680089B1 (en) | 2016-05-13 | 2017-06-13 | Micron Technology, Inc. | Magnetic tunnel junctions |
| US9799519B1 (en) * | 2016-06-24 | 2017-10-24 | International Business Machines Corporation | Selective sputtering with light mass ions to sharpen sidewall of subtractively patterned conductive metal layer |
| US9837312B1 (en) | 2016-07-22 | 2017-12-05 | Lam Research Corporation | Atomic layer etching for enhanced bottom-up feature fill |
| KR102511914B1 (ko) | 2016-08-04 | 2023-03-21 | 삼성전자주식회사 | 자기 기억 소자 및 이의 제조 방법 |
| US10103196B2 (en) | 2016-08-30 | 2018-10-16 | Micron Technology, Inc. | Methods of forming magnetic memory cells, and methods of forming arrays of magnetic memory cells |
| CN116779435A (zh) | 2016-12-09 | 2023-09-19 | Asm Ip 控股有限公司 | 热原子层蚀刻工艺 |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| KR102638610B1 (ko) | 2017-01-11 | 2024-02-22 | 삼성전자주식회사 | 자기 메모리 장치 |
| US10297746B2 (en) | 2017-04-05 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post treatment to reduce shunting devices for physical etching process |
| WO2018189067A1 (en) | 2017-04-13 | 2018-10-18 | Basf Se | Process for the etching metal- or semimetal-containing materials |
| US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
| US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
| US9997371B1 (en) | 2017-04-24 | 2018-06-12 | Lam Research Corporation | Atomic layer etch methods and hardware for patterning applications |
| US10242885B2 (en) * | 2017-05-26 | 2019-03-26 | Applied Materials, Inc. | Selective dry etching of metal films comprising multiple metal oxides |
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| KR20150112896A (ko) | 2015-10-07 |
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