CN108594599B - 抗蚀剂材料、光刻图案化方法和氧化物的用途 - Google Patents
抗蚀剂材料、光刻图案化方法和氧化物的用途 Download PDFInfo
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- CN108594599B CN108594599B CN201810445598.3A CN201810445598A CN108594599B CN 108594599 B CN108594599 B CN 108594599B CN 201810445598 A CN201810445598 A CN 201810445598A CN 108594599 B CN108594599 B CN 108594599B
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- 229910052762 osmium Inorganic materials 0.000 claims abstract description 8
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- 238000012545 processing Methods 0.000 claims description 7
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- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical group [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 claims description 4
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- OIKHZBFJHONJJB-UHFFFAOYSA-N dimethyl(phenyl)silicon Chemical compound C[Si](C)C1=CC=CC=C1 OIKHZBFJHONJJB-UHFFFAOYSA-N 0.000 description 1
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- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F30/00—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F30/04—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
- C08F30/08—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161505768P | 2011-07-08 | 2011-07-08 | |
| US61/505,768 | 2011-07-08 | ||
| PCT/EP2012/060133 WO2013007442A1 (en) | 2011-07-08 | 2012-05-30 | Lithographic patterning process and resists to use therein |
| CN201280033742.3A CN103649830B (zh) | 2011-07-08 | 2012-05-30 | 光刻图案化过程和其中使用的抗蚀剂 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280033742.3A Division CN103649830B (zh) | 2011-07-08 | 2012-05-30 | 光刻图案化过程和其中使用的抗蚀剂 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108594599A CN108594599A (zh) | 2018-09-28 |
| CN108594599B true CN108594599B (zh) | 2022-04-22 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810445598.3A Active CN108594599B (zh) | 2011-07-08 | 2012-05-30 | 抗蚀剂材料、光刻图案化方法和氧化物的用途 |
| CN201280033742.3A Active CN103649830B (zh) | 2011-07-08 | 2012-05-30 | 光刻图案化过程和其中使用的抗蚀剂 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280033742.3A Active CN103649830B (zh) | 2011-07-08 | 2012-05-30 | 光刻图案化过程和其中使用的抗蚀剂 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9261784B2 (enExample) |
| EP (1) | EP2729844B1 (enExample) |
| JP (2) | JP6236000B2 (enExample) |
| KR (2) | KR101909567B1 (enExample) |
| CN (2) | CN108594599B (enExample) |
| TW (1) | TWI631423B (enExample) |
| WO (1) | WO2013007442A1 (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
| US9632411B2 (en) * | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
| US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| JP6218192B2 (ja) * | 2013-09-26 | 2017-10-25 | 国立研究開発法人物質・材料研究機構 | 高感度積層レジスト膜及びレジスト膜の感光度向上方法 |
| TWI639179B (zh) | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| JP6283120B2 (ja) | 2014-02-24 | 2018-02-21 | 東京エレクトロン株式会社 | 光増感化学増幅レジスト内の光増感剤濃度の測定メトロロジー |
| TWI575566B (zh) * | 2014-02-24 | 2017-03-21 | 東京威力科創股份有限公司 | 與光敏化化學放大光阻化學品及程序一起使用的方法及技術 |
| JP6524388B2 (ja) | 2014-02-24 | 2019-06-05 | 東京エレクトロン株式会社 | 光増感化学増幅レジストで酸ショットノイズとして複製されるｅｕｖショットノイズの軽減 |
| JP6895600B2 (ja) | 2014-02-25 | 2021-06-30 | 東京エレクトロン株式会社 | 現像可能な底部反射防止コーティングおよび着色インプラントレジストのための化学増幅方法および技術 |
| FR3023843B1 (fr) * | 2014-07-21 | 2016-07-22 | Michelin & Cie | Polymere modifie le long de la chaine et son procede de synthese |
| JP6427684B2 (ja) * | 2015-09-30 | 2018-11-21 | 富士フイルム株式会社 | レジスト組成物、並びに、これを用いたレジスト膜、パターン形成方法及び電子デバイスの製造方法 |
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| EP2729844A1 (en) | 2014-05-14 |
| CN103649830B (zh) | 2018-06-01 |
| CN108594599A (zh) | 2018-09-28 |
| EP2729844B1 (en) | 2021-07-28 |
| CN103649830A (zh) | 2014-03-19 |
| KR20140047120A (ko) | 2014-04-21 |
| KR20180099913A (ko) | 2018-09-05 |
| JP6236000B2 (ja) | 2017-11-22 |
| KR101909567B1 (ko) | 2018-10-18 |
| JP6637943B2 (ja) | 2020-01-29 |
| WO2013007442A1 (en) | 2013-01-17 |
| JP2018025823A (ja) | 2018-02-15 |
| US20140212819A1 (en) | 2014-07-31 |
| US9261784B2 (en) | 2016-02-16 |
| JP2014521111A (ja) | 2014-08-25 |
| KR102009869B1 (ko) | 2019-08-12 |
| TWI631423B (zh) | 2018-08-01 |
| TW201305736A (zh) | 2013-02-01 |
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