CN107004662B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN107004662B
CN107004662B CN201580066323.3A CN201580066323A CN107004662B CN 107004662 B CN107004662 B CN 107004662B CN 201580066323 A CN201580066323 A CN 201580066323A CN 107004662 B CN107004662 B CN 107004662B
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Prior art keywords
solder
oxide film
semiconductor device
semiconductor chip
metal
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Chinese (zh)
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CN107004662A (zh
Inventor
林英二
小林涉
野村英司
神田和辉
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Denso Corp
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Denso Corp
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Priority claimed from PCT/JP2015/006035 external-priority patent/WO2016092791A1/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/464Additional interconnections in combination with leadframes
    • H10W70/465Bumps or wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77Auxiliary members characterised by their shape
    • H10W40/778Auxiliary members characterised by their shape in encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/04Manufacture or treatment of leadframes
    • H10W70/041Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/464Additional interconnections in combination with leadframes
    • H10W70/467Multilayered additional interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/481Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/016Manufacture or treatment using moulds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/811Multiple chips on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07351Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/381Auxiliary members
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/381Auxiliary members
    • H10W72/387Flow barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
CN201580066323.3A 2014-12-10 2015-12-04 半导体装置及其制造方法 Active CN107004662B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2014-250186 2014-12-10
JP2014250186 2014-12-10
JP2015099403 2015-05-14
JP2015-099403 2015-05-14
JP2015-223330 2015-11-13
JP2015223330A JP6578900B2 (ja) 2014-12-10 2015-11-13 半導体装置及びその製造方法
PCT/JP2015/006035 WO2016092791A1 (ja) 2014-12-10 2015-12-04 半導体装置およびその製造方法

Publications (2)

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CN107004662A CN107004662A (zh) 2017-08-01
CN107004662B true CN107004662B (zh) 2019-08-13

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US (1) US10147671B2 (enExample)
JP (1) JP6578900B2 (enExample)
CN (1) CN107004662B (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6772768B2 (ja) * 2016-11-09 2020-10-21 株式会社デンソー 半導体装置
KR101956996B1 (ko) * 2016-12-15 2019-06-24 현대자동차주식회사 양면냉각형 파워모듈
JP6512231B2 (ja) * 2017-01-27 2019-05-15 トヨタ自動車株式会社 半導体装置
JP6878930B2 (ja) * 2017-02-08 2021-06-02 株式会社デンソー 半導体装置
JP6586970B2 (ja) * 2017-03-09 2019-10-09 トヨタ自動車株式会社 半導体装置
JP6696480B2 (ja) * 2017-03-22 2020-05-20 株式会社デンソー 半導体装置
WO2018173511A1 (ja) * 2017-03-22 2018-09-27 株式会社デンソー 半導体装置
JP6724851B2 (ja) 2017-04-14 2020-07-15 株式会社デンソー 基材、それを用いたモールドパーケージ、基材の製造方法、およびモールドパッケージの製造方法
KR101977956B1 (ko) * 2017-06-21 2019-05-13 현대오트론 주식회사 전력반도체 모듈의 제조방법
JP2019009280A (ja) * 2017-06-23 2019-01-17 トヨタ自動車株式会社 半導体装置
JP6953859B2 (ja) * 2017-07-25 2021-10-27 株式会社デンソー 半導体装置
JP7043225B2 (ja) * 2017-11-08 2022-03-29 株式会社東芝 半導体装置
JP2019129228A (ja) * 2018-01-24 2019-08-01 トヨタ自動車株式会社 半導体装置及びその製造方法
US11107761B2 (en) * 2018-02-06 2021-08-31 Denso Corporation Semiconductor device
JP6995674B2 (ja) * 2018-03-23 2022-01-14 株式会社東芝 半導体装置
JP6939679B2 (ja) * 2018-03-29 2021-09-22 株式会社デンソー 半導体装置
JP2019186403A (ja) 2018-04-11 2019-10-24 トヨタ自動車株式会社 半導体装置
JP7192241B2 (ja) * 2018-05-01 2022-12-20 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
JP7159609B2 (ja) * 2018-05-15 2022-10-25 株式会社デンソー 半導体装置
JP6930495B2 (ja) * 2018-05-18 2021-09-01 株式会社デンソー 半導体装置
JP2019212801A (ja) * 2018-06-06 2019-12-12 株式会社デンソー 半導体装置およびその製造方法
JP7188915B2 (ja) * 2018-06-22 2022-12-13 新電元工業株式会社 半導体装置、及び、半導体装置の製造方法
JP6971931B2 (ja) * 2018-07-27 2021-11-24 日立Astemo株式会社 パワー半導体装置
JP2020047725A (ja) * 2018-09-18 2020-03-26 トヨタ自動車株式会社 半導体装置
JP7077893B2 (ja) * 2018-09-21 2022-05-31 株式会社デンソー 半導体装置
JP6958529B2 (ja) * 2018-10-02 2021-11-02 株式会社デンソー 半導体装置
KR102574378B1 (ko) 2018-10-04 2023-09-04 현대자동차주식회사 파워모듈
JP7139862B2 (ja) * 2018-10-15 2022-09-21 株式会社デンソー 半導体装置
JP2020145271A (ja) * 2019-03-05 2020-09-10 トヨタ自動車株式会社 半導体装置
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JP2023105546A (ja) * 2022-01-19 2023-07-31 株式会社デンソー 半導体装置
IT202200001649A1 (it) * 2022-02-01 2023-08-01 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
IT202200001646A1 (it) * 2022-02-01 2023-08-01 St Microelectronics Srl Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
JP2024134134A (ja) * 2023-03-20 2024-10-03 株式会社東芝 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030132530A1 (en) * 1999-11-24 2003-07-17 Takanori Teshima Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
JP2005136332A (ja) * 2003-10-31 2005-05-26 Toyota Motor Corp 半導体装置
CN103180942A (zh) * 2011-10-24 2013-06-26 丰田自动车株式会社 半导体模块
US20130313711A1 (en) * 2012-05-28 2013-11-28 Hitachi, Ltd. Semiconductor Device And A Method Of Manufacturing Same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077259A (ja) 1993-06-17 1995-01-10 Matsushita Electric Ind Co Ltd 電子部品実装方法
JPH08148647A (ja) 1994-11-15 1996-06-07 Toshiba Corp 半導体装置
JP3719506B2 (ja) * 2001-12-19 2005-11-24 株式会社デンソー 半導体装置及びその製造方法
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
JP3829325B2 (ja) 2002-02-07 2006-10-04 日本電気株式会社 半導体素子およびその製造方法並びに半導体装置の製造方法
JP4770533B2 (ja) 2005-05-16 2011-09-14 富士電機株式会社 半導体装置の製造方法および半導体装置
JP4702196B2 (ja) 2005-09-12 2011-06-15 株式会社デンソー 半導体装置
JP2007173537A (ja) 2005-12-22 2007-07-05 Mtex Matsumura Co 電子部品パッケージの表面改質方法とその表面の改質装置
JP2008247633A (ja) 2007-03-29 2008-10-16 Central Glass Co Ltd レーザー光照射によるガラス板の加工方法
JP5113462B2 (ja) 2007-09-12 2013-01-09 三星ダイヤモンド工業株式会社 脆性材料基板の面取り方法
JP5691831B2 (ja) 2011-05-18 2015-04-01 株式会社デンソー 半導体装置およびその製造方法
JP5747805B2 (ja) 2011-12-12 2015-07-15 株式会社デンソー 電子装置
CN104603937B (zh) 2012-09-07 2018-03-20 日立汽车系统株式会社 半导体装置及其制造方法
JP5983700B2 (ja) 2013-12-09 2016-09-06 株式会社デンソー 半導体装置およびその製造方法、複合成形体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030132530A1 (en) * 1999-11-24 2003-07-17 Takanori Teshima Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
JP2005136332A (ja) * 2003-10-31 2005-05-26 Toyota Motor Corp 半導体装置
CN103180942A (zh) * 2011-10-24 2013-06-26 丰田自动车株式会社 半导体模块
US20130313711A1 (en) * 2012-05-28 2013-11-28 Hitachi, Ltd. Semiconductor Device And A Method Of Manufacturing Same

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US10147671B2 (en) 2018-12-04
JP6578900B2 (ja) 2019-09-25
CN107004662A (zh) 2017-08-01
US20170278774A1 (en) 2017-09-28
JP2016197706A (ja) 2016-11-24

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